T2G6000528-Q3 10W, 28V DC - 6 GHz, GaN RF Power Transistor Applications * * * * * * Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features * * * * * Functional Block Diagram Frequency: DC to 6 GHz Output Power (P3dB): 10 W at 3.3 GHz Linear Gain: >17 dB at 3.3 GHz Operating Voltage: 28 V Low thermal resistance package 1 2 General Description Pin Configuration The TriQuint T2G6000528-Q3 is a 10W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz. The device is constructed with TriQuint's proven TQGaN25 production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Lead-free and ROHS compliant Pin No. Label 1 2 Flange VD / RF OUT VG / RF IN Source Ordering Information Part ECCN Description T2G6000528-Q3 EAR99 Packaged part Flangeless Evaluation boards are available upon request. Datasheet: Rev C 11-14-14 (c) 2013 TriQuint T2G6000528-Q3EAR99 EVB3 3.0-3.5 GHz Evaluation Board T2G6000528-Q3EAR99 EVB5 3.8-4.2 GHz Evaluation Board T2G6000528-Q3EAR99 EVB6 5.8 GHz Evaluation Board T2G6000528-Q3EAR99 EVB1 1.9 - 2.7 GHz Evaluation Board - 1 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G6000528-Q3 10W, 28V DC - 6 GHz, GaN RF Power Transistor Absolute Maximum Ratings Recommended Operating Conditions Parameter Parameter Breakdown Voltage (BVDG) Drain Gate Voltage (VDG) Gate Voltage Range (VG) Drain Current (ID) Gate Current (IG) Power Dissipation (PD) Value 100 V (Min.) 40 V -10 to 0 V 2.5 A -2.5 to 7 mA 15 W RF Input Power, CW, T = 25C (PIN) 34 dBm Channel Temperature (TCH) 275 C Mounting Temperature (30 Seconds) 320 C Storage Temperature Value Drain Voltage (VD) Drain Quiescent Current (IDQ) Peak Drain Current ( ID) Gate Voltage (VG) Channel Temperature (TCH) Power Dissipation, CW (PD) Power Dissipation, Pulse (PD) 28 V (Typ.) 50 mA (Typ.) 650 mA (Typ.) -3.0 V (Typ.) 225 C (Max) 11 W (Max) 12.5 W (Max) Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. -40 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. RF Characterization - Load Pull Performance at 3.0 GHz (1) Test conditions unless otherwise noted: TA = 25 C, VD = 28 V, IDQ = 50 mA Symbol Parameter GLIN P3dB DE3dB PAE3dB G3dB Min Linear Gain Output Power at 3 dB Gain Compression Drain Efficiency at 3 dB Gain Compression Power-Added Efficiency at 3 dB Gain Compression Gain at 3 dB Compression Typical Max 18.5 9.2 57.5 55.9 15.5 Units dB W % % dB Notes: 1. VDS = 28 V, IDQ = 50 mA; Pulse: 100s, 20% RF Characterization - Load Pull Performance at 6.0 GHz (1) Test conditions unless otherwise noted: TA = 25 C, VD = 28 V, IDQ = 50 mA Symbol Parameter GLIN P3dB DE3dB PAE3dB G3dB Min Linear Gain Output Power at 3 dB Gain Compression Drain Efficiency at 3 dB Gain Compression Power-Added Efficiency at 3 dB Gain Compression Gain at 3 dB Compression Typical 15.0 9.3 63.0 59.0 12.0 Max Units dB W % % dB Notes: 1. VDS = 28 V, IDQ = 50 mA; Pulse: 100s, 20% Datasheet: Rev C 11-14-14 (c) 2013 TriQuint - 2 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G6000528-Q3 10W, 28V DC - 6 GHz, GaN RF Power Transistor RF Characterization - Performance at 3.3 GHz (1, 2) Test conditions unless otherwise noted: TA = 25 C, VD = 28 V, IDQ = 50 mA Symbol Parameter GLIN P3dB DE3dB PAE3dB G3dB Min Typical 15.5 8.9 50.0 45.0 12.5 17.4 9.7 53.0 49.7 14.4 Linear Gain Output Power at 3 dB Gain Compression Drain Efficiency at 3 dB Gain Compression Power-Added Efficiency at 3 dB Gain Compression Gain at 3 dB Compression Max Units dB W % % dB Notes: 1. Performance at 3.3 GHz in the 3.0 to 3.5 GHz Evaluation Board 2. VDS = 28 V, IDQ = 50 mA; Pulse: 100s, 20% RF Characterization - Narrow Band Performance at 3.50 GHz (1) Test conditions unless otherwise noted: TA = 25 C, VD = 28 V, IDQ = 50 mA Symbol Parameter VSWR Typical Impedance Mismatch Ruggedness 10:1 Notes: 1. VDS = 28 V, IDQ = 50 mA, CW at P1dB Datasheet: Rev C 11-14-14 (c) 2013 TriQuint - 3 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G6000528-Q3 10W, 28V DC - 6 GHz, GaN RF Power Transistor Thermal and Reliability Information Parameter Test Conditions Thermal Resistance (JC) Channel Temperature (TCH) DC at 85 C Case Value Units 12.4 225 C/W C Notes: Thermal resistance measured to bottom of package, CW. Median Lifetime Maximum Channel Temperature TBASE = 85C, PD = 12.5 W Maximum Channel Temperature (oC) 260.0 Max. Channel Temperature vs. Pulse Width 240.0 220.0 200.0 180.0 160.0 5% Duty Cycle 10% Duty Cycle 140.0 25% Duty Cycle 50% Duty Cycle 120.0 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 Pulse Width (sec) Datasheet: Rev C 11-14-14 (c) 2013 TriQuint - 4 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G6000528-Q3 10W, 28V DC - 6 GHz, GaN RF Power Transistor Load Pull Smith Charts (1, 2) RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency. Notes: 1. Test Conditions: VDS = 28 V, IDQ = 50 mA 2. Test Signal: Pulse Width = 100 sec, Duty Cycle = 20% Datasheet: Rev C 11-14-14 (c) 2013 TriQuint - 5 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G6000528-Q3 10W, 28V DC - 6 GHz, GaN RF Power Transistor Typical Performance Performance is based on compromised impedance point and measured at DUT reference plane. T2G6000528-Q3 Gain DrEff. and PAE vs. Pout T2G6000528-Q3 Gain DrEff. and PAE vs. Pout 2000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA 24 23 70 23 ZS = 3.21 + j6.81 70 22 ZL = 22.54 + j6.93 60 22 60 21 50 20 40 19 30 Gain DrEff. PAE ZS = 9.14 + j14.83 18 ZL = 29.07 + j5.48 17 16 33 34 35 36 37 20 Gain [dB] 80 21 50 20 40 19 30 Gain DrEff. PAE 18 10 17 0 39 38 80 16 33 34 37 38 39 0 40 Pout [dBm] T2G6000528-Q3 Gain DrEff. and PAE vs. Pout T2G6000528-Q3 Gain DrEff. and PAE vs. Pout 4000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA 80 19 70 17 70 60 16 ZS = 4.86 - j1.97 17 50 ZL = 19.81 + j11.00 16 40 15 30 Gain DrEff. PAE 14 13 12 31 32 33 34 35 36 37 38 39 20 Gain [dB] 18 50 ZL = 17.38 + j9.39 14 40 13 30 Gain DrEff. PAE 12 10 40 60 ZS = 6.35 - j10.23 15 11 0 41 10 31 32 33 34 35 36 37 38 39 20 10 40 0 41 Pout [dBm] Pout [dBm] T2G6000528-Q3 Gain DrEff. and PAE vs. Pout T2G6000528-Q3 Gain DrEff. and PAE vs. Pout 5000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA 18 6000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA 80 18 80 17 ZS = 11.46 - j17.67 70 60 16 ZL = 13.23 - j3.01 60 15 50 14 40 30 Gain DrEff. PAE 12 11 10 31 32 33 34 35 36 37 38 39 20 Gain [dB] 70 ZL = 10.57 + j2.84 10 40 50 14 40 13 30 Gain DrEff. PAE 12 11 0 41 10 31 Pout [dBm] Datasheet: Rev C 11-14-14 (c) 2013 TriQuint 15 32 33 34 35 36 37 38 39 20 DrEff. & PAE [%] ZS = 9.03 - j11.85 16 DrEff. & PAE [%] 17 13 DrEff. & PAE [%] 80 DrEff. & PAE [%] 20 18 Gain [dB] 36 10 Pout [dBm] 3000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA Gain [dB] 35 20 DrEff. & PAE [%] 24 DrEff. & PAE [%] Gain [dB] 1000 MHz, 100 usec 20%, Vds = 28V, Idq = 50 mA 10 40 0 41 Pout [dBm] - 6 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G6000528-Q3 10W, 28V DC - 6 GHz, GaN RF Power Transistor Performance Over Temperature (1, 2) Performance measured in TriQuint's 3.0 GHz to 3.5 GHz Evaluation Board at 3 dB compression. Notes: 1. Test Conditions: VDS = 28 V, IDQ = 50 mA 2. Test Signal: Pulse Width = 100 s, Duty Cycle = 20% Datasheet: Rev C 11-14-14 (c) 2013 TriQuint - 7 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G6000528-Q3 10W, 28V DC - 6 GHz, GaN RF Power Transistor Evaluation Board Performance (1, 2) Performance at 3 dB Compression Notes: 1. Test Conditions: VDS = 28 V, IDQ = 50 mA 2. Test Signal: Pulse Width = 100 s, Duty Cycle = 20 % Application Circuit Bias-up Procedure Bias-down Procedure 1. VG set to -5 V. 2. VD set to 28 V. 3. Adjust VG more positive until quiescent ID is 50 mA. 4. Apply RF signal. Datasheet: Rev C 11-14-14 (c) 2013 TriQuint 1. Turn off RF signal. 2. Turn off VD and wait 1 second to allow drain capacitor dissipation. 3. Turn off VG. - 8 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G6000528-Q3 10W, 28V DC - 6 GHz, GaN RF Power Transistor Evaluation Board Layout Top RF layer is 0.025" thick Rogers RO3210, r = 10.2. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Bill of Materials Reference Design Value Qty Manufacturer Part Number C1, C7 C2, C8 C3, C9 C4, C10 C5, C11 C6, C12 C13, C14 R1 R2 L1, L2 22 uF 1 uF 0.1 uF 0.01 uF 100 pF 2400 pF 27 pF 1000 ohm 12 ohm 9.85 nH 2 2 2 2 2 2 2 1 1 2 Sprague Kemet Kemet Kemet ATC DLI ATC Vishay Dale Vishay Dale Coilcraft T491D 1812C105KAT2A C1206C104KRAC7800 C1206C103KRAC7800 100B101 C08BL242C5UNC0B 600L270JT200 CRCW0805100F100 RM73B2B120J 16069JLB Datasheet: Rev C 11-14-14 (c) 2013 TriQuint - 9 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G6000528-Q3 10W, 28V DC - 6 GHz, GaN RF Power Transistor Pin Layout Note: The T2G6000528-Q3 will be marked with the "05282" designator and a lot code marked below the part designator. The "YY" represents the last two digits of the calendar year the part was manufactured, the "WW" is the work week of the assembly lot start, and the "MXXX" is the production lot number. Pin Description Pin Symbol Description 1 VD / RF OUT Drain voltage / RF Output matched to 50 ohms; see EVB Layout on page 9 as an example. 2 VG / RF IN Gate voltage / RF Input matched to 50 ohms; see EVB Layout on page 9 as an example. 3 Flange Source connected to ground; see EVB Layout on page 9 as an example. Notes: Thermal resistance measured to bottom of package Datasheet: Rev C 11-14-14 (c) 2013 TriQuint - 10 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G6000528-Q3 10W, 28V DC - 6 GHz, GaN RF Power Transistor Mechanical Information All dimensions are in millimeters. Unless specified otherwise, tolerances are 0.127. Note: This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free (maximum 260 C reflow temperature) and tin-lead (maximum 245C reflow temperature) soldering processes. Datasheet: Rev C 11-14-14 (c) 2013 TriQuint - 11 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G6000528-Q3 10W, 28V DC - 6 GHz, GaN RF Power Transistor Product Compliance Information ESD Sensitivity Ratings Caution! ESD-Sensitive Device Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260 C RoHs Compliance ESD Rating: Value: Test: Standard: Class 1A Passes 250 V to < 500 V max. Human Body Model (HBM) JEDEC Standard JESD22-A114 This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: * Lead Free * Halogen Free (Chlorine, Bromine) MSL Rating * Antimony Free * TBBP-A (C15H12Br402) Free Level 3 at +260 C convection reflow * PFOS Free The part is rated Moisture Sensitivity Level 3 at 260C per * SVHC Free JEDEC standard IPC/JEDEC J-STD-020. ECCN US Department of Commerce EAR99 Recommended Soldering Temperature Profile Datasheet: Rev C 11-14-14 (c) 2013 TriQuint - 12 of 13 - Disclaimer: Subject to change without notice www.triquint.com T2G6000528-Q3 10W, 28V DC - 6 GHz, GaN RF Power Transistor Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: info-sales@triquint.com Tel: Fax: For technical questions and application information: +1.972.994.8465 +1.972.994.8504 Email: info-products@triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Datasheet: Rev C 11-14-14 (c) 2013 TriQuint - 13 of 13 - Disclaimer: Subject to change without notice www.triquint.com