© 2006 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 100 V
VDGR TJ= 25°C to 175°C; RGS = 1 MΩ100 V
VGS ±20 V
VGSM ±30 V
ID25 TC= 25°C 120 A
ID(RMS) External lead current limit 75 A
IDM TC= 25°C, pulse width limited by TJM 400 A
IAR TC= 25°C60A
EAR TC= 25°C 100 mJ
EAS TC= 25°C4J
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS, 10 V/ns
TJ≤ 150°C, RG = 4 Ω
PDTC= 25°C 300 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +150 °C
VISOL 50/60 Hz, RMS, 1 minute 2500 V~
FCMounting Force 20..120/4.6..20 Nm/lb
Weight 5g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA 100 V
VGS(th) VDS = VGS, ID = 500µA 3.0 5.0 V
IGSS VGS = ±30 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 150°C 250 µA
VGS = 0 V TJ = 175°C 1000 µA
RDS(on) VGS = 10 V, ID = 60 A 8.0 m Ω
VGS = 15 V, ID = 400A 5.5 m Ω
DS99365E(03/06)
PolarTM HiPerFET
Power MOSFET
Electrically Isolated Tab
IXTR 200N10P
N-Channel Enhancement Mode
Avalanche Rated
Fast Recovery Diode
VDSS = 100 V
ID25 = 120 A
RDS(on) ≤≤
≤≤
≤ 8 mΩΩ
ΩΩ
Ω
Features
lSilicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
lLow drain to tab capacitance(<30pF)
lAvalanche voltage rated
lFast recovery intrinsic diode
Applications
lDC-DC converters
lBattery chargers
lSwitched-mode and resonant-mode
power supplies
lDC choppers
lAC motor control
Advantages
lEasy assembly
lSpace savings
lHigh power density
G = Gate D = Drain
S = Source
ISOLATED TAB
ISOPLUS 247TM (IXTR)
E153432
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTR 200N10P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 100 A, Note 1 60 97 S
Ciss 7600 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 2900 pF
Crss 860 pF
td(on) 30 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 35 ns
td(off) RG = 3.3 Ω (External) 150 ns
tf90 ns
Qg(on) 235 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 100 A 50 nC
Qgd 135 nC
RthJC 0.5 °C/W
RthCS 0.15 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 200 A
ISM Repetitive 400 A
VSD IF = IS, VGS = 0 V, Note 1 1.5 V
trr IF = 25 A, dI/dt = 100 A/µs 100 ns
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
ISOPLUS247 (IXTR) Outline
© 2006 IXYS All rights reserved
IXTR 200N10P
Fig. 2. Extende d Output Characteristics
@ 25
º
C
0
50
100
150
200
250
300
350
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VD S - Volts
I D - Amperes
V
GS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 150
º
C
0
25
50
75
100
125
150
175
200
0 0.5 1 1.5 2 2.5 3 3.5
VD S - Volts
I D - Amperes
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 1. Output Characteristics
@ 25
º
C
0
25
50
75
100
125
150
175
200
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
VD S - Volts
I D - Amperes
V
GS
= 10V
9V
7V
6V
8V
Fig. 4. RDS(on
)
Norm alize d to ID = 100A
Value vs. Junction Temperature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
-50 -25 0 25 50 75 100 125 150 175
TJ
- Degrees Centigrade
R D S ( o n ) - Normalized
I
D
= 200A
I
D
= 100A
V
GS
= 10V
Fig. 5. RDS(on) Norm alize d to ID = 100A
Value vs . Drain Curre nt
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 50 100 150 200 250 300 350
I D - Amperes
R D S ( o n ) - Normalized
T
J
= 25
º
C
T
J
= 175
º
C
V
GS
= 10V
V
GS
= 15V - - - -
Fig. 6. Drain Curre nt vs. Case
Tem perature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150 175
TC - Degrees Centigrade
I D - Amperes
External Lead Current limit
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTR 200N10P
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 25 50 75 100 125 150 175 200 225 250
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 50V
I
D
= 100A
I
G
= 10m A
Fig. 7. Input Admittance
0
50
100
150
200
250
300
4 4.5 5 5.5 6 6.5 7 7.5 8 8 .5 9
V
G S
- Volts
I
D
- Amperes
T
J
= 150
º
C
25
º
C
-40
º
C
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
0 50 100 150 200 250 300 350
I
D
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
150
º
C
Fig. 9. Source Current vs .
Source-To-Drain Voltage
0
50
100
150
200
250
300
350
0.4 0.6 0.8 1 1.2 1.4 1.6
V
S D
- Volts
I
S
- Amperes
T
J
= 150
º
C
T
J
= 25
º
C
Fig. 12. Forw ard-Bias
Safe Operating Area
10
100
1000
1 10 100 1000
VD S - V olts
I D - Amperes
100µs
1m s
DC
TJ = 175ºC
TC = 25ºC
RDS(on)
Lim it
10m s
© 2006 IXYS All rights reserved
IXTR 200N10P
Fig. 13. Maximum Transient Thermal Resistance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
R
( t h ) J C
-
ºC / W
IXYS REF: T_200N10P (88) 03-22-06-E.xls
