PolarTM HiPerFET Power MOSFET IXTR 200N10P VDSS = 100 V ID25 = 120 A 8 m RDS(on) Electrically Isolated Tab N-Channel Enhancement Mode Avalanche Rated Fast Recovery Diode Symbol Test Conditions VDSS TJ = 25 C to 175 C 100 V VDGR TJ = 25 C to 175 C; RGS = 1 M 100 V VGS 20 V VGSM 30 V 120 A 75 A 400 A ID25 TC = 25 C ID(RMS) External lead current limit IDM TC = 25 C, pulse width limited by TJM IAR TC = 25 C 60 A EAR TC = 25 C 100 mJ EAS TC = 25 C 4 J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 4 10 V/ns PD TC = 25 C 300 W -55 ... +175 175 -55 ... +150 C C C TJ TJM Tstg VISOL 50/60 Hz, RMS, 1 minute FC Mounting Force 2500 V~ 20..120/4.6..20 Nm/lb Weight 5 Symbol Test Conditions (TJ = 25 C, unless otherwise specified) g Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 A 100 VGS(th) VDS = VGS, ID = 500A 3.0 V 5.0 V IGSS VGS = 30 VDC, VDS = 0 100 nA IDSS VDS = VDSS VGS = 0 V VGS = 0 V 25 250 1000 A A A RDS(on) VGS = 10 V, ID = 60 A VGS = 15 V, ID = 400A 8.0 m m (c) 2006 IXYS All rights reserved ISOPLUS 247TM (IXTR) E153432 Maximum Ratings TJ = 150 C TJ = 175 C 5.5 ISOLATED TAB G = Gate S = Source D = Drain Features l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF) l Avalanche voltage rated l Fast recovery intrinsic diode Applications DC-DC converters l l Battery chargers l Switched-mode and resonant-mode power supplies DC choppers l l AC motor control Advantages Easy assembly l l Space savings l High power density DS99365E(03/06) IXTR 200N10P Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 100 A, Note 1 60 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 97 S 7600 pF 2900 pF 860 pF Crss td(on) tr VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A td(off) RG = 3.3 (External) 30 ns 35 ns 150 ns 90 ns 235 nC 50 nC 135 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 100 A Qgd ISOPLUS247 (IXTR) Outline 0.5 C/W RthJC RthCS C/W 0.15 Source-Drain Diode Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 200 A ISM Repetitive 400 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 25 A, dI/dt = 100 A/s 100 ns Notes: 1. Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXTR 200N10P Fig. 1. Output Characte r is tics @ 25C Fig. 2. Exte nde d Output Characte r is tics @ 25C 350 200 V GS = 10V 9V 175 V GS = 10V 300 9V 250 8V 125 I D - Amperes I D - Amperes 150 100 75 7V 50 6V 25 200 8V 150 7V 100 50 0 6V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 1.6 0.5 1 1.5 V D S - V olts Fig. 3. Output Characte r is tics @ 150C 3 3.5 4 4.5 5 2.4 V GS = 10V 9V V GS = 10V 2.2 150 R D S ( o n ) - Normalized 175 I D - Amperes 2.5 Fig. 4. RDS(on ) Norm alize d to ID = 100A V alue vs . Junction Te m pe r atur e 200 8V 125 100 7V 75 6V 50 25 2 1.8 I D = 200A 1.6 1.4 I D = 100A 1.2 1 0.8 5V 0 0.6 0 0.5 1 1.5 2 V D S - V olts 2.5 3 3.5 -50 -25 90 2.2 80 TJ = 175 C I D - Amperes 1.6 V GS = 10V V GS = 15V - - - - 1.2 50 75 100 125 150 175 TJ = 25 C 1 Ex ternal Lead Current limit 70 1.8 1.4 25 Fig . 6. Dr ain C u r r e n t vs . C as e T e m p e r atu r e 2.4 2 0 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to ID = 100A V alue vs . Drain Curr e nt R D S ( o n ) - Normalized 2 V D S - V olts 60 50 40 30 20 0.8 10 0.6 0 0 50 100 150 200 I D - A mperes (c) 2006 IXYS All rights reserved 250 300 350 -50 -25 0 25 50 75 100 125 TC - Degrees Centigrade 150 175 IXTR 200N10P Fig. 8. Trans conductance 300 140 250 120 100 - Siemens 200 TJ = 150 C 100 150 C 60 25 C 40 -40 C 50 25 C fs 150 TJ = -40 C 80 g I D - Amperes Fig. 7. Input Adm ittance 20 0 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 0 9 50 100 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Source -To-Drain V oltage 250 300 350 10 V DS = 50V 9 300 I D = 100A 8 250 I G = 10m A 7 V G S - Volts I S - Amperes 200 Fig. 10. Gate Char ge 350 200 150 6 5 4 3 TJ = 150 C 100 2 50 TJ = 25 C 1 0 0 0.4 0.6 0.8 1 1.2 1.4 1.6 0 V S D - V olts 25 50 75 100 125 150 175 200 225 250 Q G - nanoCoulombs Fig . 1 2 . Fo r w a r d - Bia s S a f e Op e r a t in g A r e a Fig. 11. Capacitance 1000 100,000 f = 1MH z TJ = 1 7 5 C R D S (o n ) L im it C is s 10,000 I D - Amperes Capacitance - picoFarads 150 I D - A mperes C os s C rs s 1,000 TC = 2 5 C 1 0 0 s 100 1m s 10m s DC 10 100 0 5 10 15 20 25 30 35 40 V DS - V olts IXYS reserves the right to change limits, test conditions, and dimensions. 1 10 VD S - V o lts 100 1000 IXTR 200N10P Fig. 13. Maximum Transient Thermal Resistance R( t h ) J C - C / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2006 IXYS All rights reserved IXYS REF: T_200N10P (88) 03-22-06-E.xls