Sep.1998
Description:
Mitsubishi Intelligent Power Mod-
ules are isolated base modules de-
signed for power switching applica-
tions operating at frequencies to
20kHz. Built-in control circuits pro-
vide optimum gate drive and pro-
tection for the IGBT and free wheel
diode power devices.
Features:
uComplete Output Power
Circuit
uGate Drive Circuit
uProtection Logic
– Short Circuit
– Over Current
– Over Temperature
– Under Voltage
Applications:
uInverters
uUPS
uMotion/Servo Control
uPower Supplies
Ordering Information:
Example: Select the complete
part number from the table below
-i.e. PM150DSA120 is a 1200V,
150 Ampere Intelligent Power Mod-
ule.
Type Current Rating VCES
Amperes Volts (x 10)
PM 150 120
Dimensions Inches Millimeters
A 4.33 110.0
B 3.66±0.010 93.0±0.25
C 2.20 56.0
D 2.01 51.0
E 1.14 +0.04/-0.02 29.0 +1/-0.5
F 1.02 26.0
G 0.98 25.0
H 0.90 23.0
J 0.85 21.5
Dimensions Inches Millimeters
K 0.55 14.0
L 0.51 13.0
M 0.47 12.0
N 0.33 8.5
P 0.28 7.0
Q 0.22 Dia. Dia. 5.5
R M5 Metric M5
S 0.100 2.54
T 0.08 Dia. Dia. 2.0
Outline Drawing and Circuit Diagram
MITSUBISHI INTELLIGENT POWER MODULES
PM150DSA120
FLA T -BASE TYPE
INSULATED PACKAGE
K
F
E
1.
2.
3.
4.
5.
1.
2.
3.
4.
5.
SNR
VNC
FNO
VN1
CN1
VP1
SPR
CP1
VPC
FPO
N SIDE P SIDE
L
P
0.64 MM SQ. PIN
(10 TYP.)
M
DH
GG B
AN
J
C
N
S (8 TYP.)
C2E1 E2 C1
21 345
T - DIA.
(2 TYP.)
Q - DIA.
(2 TYP.) R - THD.
(3 TYP.)
P
21345
SINK
SENS
OUT2
OUT1
GND
TEMP
VCC
FO
SR
IN
VN1
FNO
SNR
CN1
VNC
C2E1
E2
SINK
SENS
OUT2
OUT1
GND
TEMP
VCC
FO
SR
IN
C1
VP1
FPO
SPR
CP1
VPC
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Sep.1998
Absolute Maximum Ratings, Tj = 25°C unless otherwise specified
Ratings Symbol PM150DSA120 Units
Power Device Junction Temperature Tj-20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Case Operating Temperature TC-20 to 100 °C
Mounting Torque, M5 Mounting Screws — 2.5~3.5 N · m
Mounting Torque, M5 Main Terminal Screws — 2.5~3.5 N · m
Module Weight (Typical) — 430 Grams
Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part) VCC(prot.) 800 Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms
Control Sector
Supply Voltage (Applied between VP1-VPC, VN1-VNC)V
D
20 Volts
Input Voltage (Applied between CP1-VPC, CN1-VNC)V
CIN 10 Volts
Fault Output Supply Voltage (Applied between Fpo-Vpc and Fno-Vnc)V
FO 20 Volts
Fault Output Current (Sink Current at FPO, FNO Terminal) IFO 20 mA
IGBT Inverter Sector
Collector-Emitter Voltage (VD = 15V, VCIN = 5V) VCES 1200 Volts
Collector Current, (Tc = 25°C) IC150 Amperes
Peak Collector Current, (Tc = 25°C) ICP 300 Amperes
Supply Voltage (Applied between C1 - E2) VCC 900 Volts
Supply Voltage, Surge (Applied between C1 - E2) VCC(surge) 1000 Volts
Collector Dissipation PC960 Watts
MITSUBISHI INTELLIGENT POWER MODULES
PM150DSA120
FLA T-BASE TYPE
INSULATED PACKAGE
http://store.iiic.cc/
Sep.1998
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ . Max. Units
Control Sector
Over Current Trip Level Inverter Part OC -20°C ≤ T ≤ 125°C, VD = 15V 200 320 — Amperes
Short Circuit Trip Level Inverter Part SC -20°C ≤ T ≤ 125°C, VD = 15V 280 450 — Amperes
Over Current Delay Time toff(OC) VD = 15V — 5 — µs
Over Temperature Protection OT T rip Level 100 1 10 120 °C
OTrReset Level 85 95 105 °C
Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts
UVrReset Level — 12.5 — Volts
Supply Voltage VDApplied between VP1-VPC, VN1-VNC 13.5 15 16.5 Volts
Circuit Current IDVD = 15V, VCIN = 5V, VN1-VNC —1926mA
V
D
= 15V, VCIN = 5V, VXP1-VXPC —1926mA
Input ON Threshold Voltage VCIN(on) Applied between 1.2 1.5 1.8 Volts
Input OFF Threshold Voltage VCIN(off) CP1-VPC, CN1-VNC 1.7 2.0 2.3 Volts
PWM Input Frequency fPWM 3-φ Sinusoidal — 15 20 kHz
Fault Output Current IFO(H) VD = 15V, VFO = 15V — — 0.01 mA
IFO(L) VD = 15V, VFO = 15V — 10 15 mA
Minimum Fault Output Pulse Width tFO VD = 15V 1.0 1.8 — ms
SXR Terminal Output Voltage VSXR -20°C ≤ Tj ≤125°C, Rin = 6.8 kΩ (SPR, SNR) 4.5 5.1 5.6 Volts
MITSUBISHI INTELLIGENT POWER MODULES
PM150DSA120
FLAT-BASE TYPE
INSULATED PACKAGE
http://store.iiic.cc/
Sep.1998
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ . Max. Units
IGBT Inverter Sector
Collector Cutoff Current ICES VCE = VCES, Tj = 25°C——1mA
V
CE = VCES, Tj = 125°C——10mA
Emitter-Collector Voltage VEC -IC = 150A, VD = 15V, VCIN = 5V — 2.5 3.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 150A — 2.3 3.2 Volts
VD = 15V, VCIN = 0V, IC = 150A, — 2.1 2.9 Volts
Tj = 125°C
Inductive Load Switching Times ton 0.5 1.4 2.5 µs
trr VD = 15V, VCIN = 0 ↔ 5V — 0.2 0.4 µs
tC(on) VCC = 600V, IC = 150A — 0.4 1.0 µs
toff Tj = 125°C — 2.5 3.5 µs
tC(off) — 0.6 1.1 µs
Thermal Characteristics
Characteristic Symbol Condition Min. T yp. Max. Units
Junction to Case Thermal Resistance Rth(j-c)Q Each IGBT — — 0.13 °C/Watt
Rth(j-c)F Each FWDi — — 0.25 °C/Watt
Contact Thermal Resistance Rth(c-f) Case to Fin Per Module — — 0.048 °C/Watt
Thermal Grease Applied
Recommended Conditions for Use
Characteristic Symbol Condition Value Units
Supply V oltage VCC Applied across C1-E2 Terminals 0 ~ 800 Volts
VDApplied between VP1-VPC, VN1-VNC 15 ± 1.5 Volts
Input ON Voltage VCIN(on) Applied between 0 ~ 0.8 Volts
Input OFF Voltage VCIN(off) CP1-VPC, CN1-VNC 4.0 ~ VSXR Volts
PWM Input Frequency fPWM Using Application Circuit 5 ~ 20 kHz
Minimum Dead Time tdead Input Signal ≥ 3.5 µs
MITSUBISHI INTELLIGENT POWER MODULES
PM150DSA120
FLAT-BASE TYPE
INSULATED PACKAGE
http://store.iiic.cc/
Sep.1998
MITSUBISHI INTELLIGENT POWER MODULES
PM150DSA120
FLAT-BASE TYPE
INSULATED PACKAGE
0
1
2
3
4
5
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
COLLECTOR CURRENT, I
C
, (AMPERES)
SATURATION VOLTAGE V
CE(sat)
, (VOLTS)
0040 24080 120 200
V
D
= 15V
V
CIN
= 0V
T
j
= 25
o
C
T
j
= 125
o
C
160 0
1
2
3
4
5
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS (TYPICAL)
SUPPLY VOLTAGE, V
D
, (VOLTS)
COLLECTOR-EMITTER SATURATION VOLTAGE
V
CE(sat)
, (VOLTS)
12 14 16 18 20
I
C
= 150A
V
CIN
= 0V
T
j
= 25
o
C
T
j
= 125
o
C
6
012
0
40
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
35
80
120
160
200
240
4
T
j
= 25
o
C
V
CIN
= 0V
V
D
= 17V 13
15
10
1
10
2
10
3
10
-1
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIMES, t
on
, t
off
, (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
t
on
10
0
10
1
t
off
V
CC
= 600V
V
D
= 15V
Inductive Load
T
j
= 25
o
C
T
j
= 125
o
C
10
1
10
2
10
3
10
-1
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIMES, t
c(on)
, t
c(off)
, (µs)
SWITCHING TIME VS.
COLLECTOR CURRENT (TYPICAL)
t
c(on)
10
0
10
1
t
c(off)
V
CC
= 600V
V
D
= 15V
Inductive Load
T
j
= 25
o
C
T
j
= 125
o
C
10
1
10
2
10
3
10
-2
COLLECTOR REVERSE CURRENT, -I
C
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (µs)
REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL)
10
-1
10
0
V
CC
= 600V
V
D
= 15V
Inductive Load
T
j
= 25
o
C
T
j
= 125
o
C
10
1
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
10
2
10
3
t
rr
I
rr
001.0 2.5
10
0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
COLLECTOR REVERSE CURRENT, -I
C
, (AMPERES)
DIODE FORWARD CHARACTERISTICS
10
1
10
3
0.5 1.5 2.0
T
j
= 25
o
C
T
j
= 125
o
C
V
CIN
= 5V
10
2
3.0 3.5
40
60
80
100
120
OVER CURRENT TRIP LEVEL VS.
SUPPLY VOLTAGE (TYPICAL)
SUPPLY VOLTAGE, V
D
, (VOLTS)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
12 14 16 18 20
0
T
C
= 25
o
C
60
80
100
120
140
OVER CURRENT TRIP LEVEL VS.
TEMPERATURE (TYPICAL)
JUNCTION TEMPERATURE, T
C
, (
o
C)
OVER CURRENT TRIP LEVEL % (NORMALIZED)
0 40 80 120
V
D
= 15V
0160
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Sep.1998
MITSUBISHI INTELLIGENT POWER MODULES
PM150DSA120
FLAT-BASE TYPE
INSULATED PACKAGE
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
101
10-1 100101
100
10-1
10-2
10-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 0.25oC/W
10-2
10-3
0
40
60
80
100
120
FAULT OUTPUT PULSE WIDTH VS.
TEMPERATURE (TYPICAL)
JUNCTION TEMPERATURE, TC, (oC)
FAULT OUTPUT PULSE WIDTH % (NORMALIZED)
0 40 80 120
VD = 15V
160
10
11
12
13
14
CONTROL SUPPLY VOLTAGE TRIP-RESET
LEVEL TEMPERATURE DEPENDENCY
(TYPICAL)
JUNCTION TEMPERATURE, TC, (oC)
UV TRIP-RESET LEVEL,
UV, UVr, (VOLTS)
16004080
UVr
UV
0120
TIME, (s)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each IGBT)
101
10-1 100101
100
10-1
10-2
10-3
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 0.13oC/W
10-2
10-3
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