Rugged Power MOSFETs IRFPC40R, IRFPC42R Avalanche-Energy-Rated N-Channel Power MOSFETs 6.8A and 5.9A, 600V Toston = 1.2Q and 1.6Q Features: a Isolated Central Mounting Hole u Repetitive Avalanche Ratings a Simple Drive Requirements a Ease of Paralleling The IRFPC40R and IRFPC42R are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified tevel of energy in the breakdown avalanche mode of operation. These are n-channel enhancement- mode silicon-gate power field-effect transistors designed File Number 2158 N-CHANNEL ENHANCEMENT MODE Do 8 92CS- 42658 TERMINAL DIAGRAM TERMINAL DESIGNATION SOURCE for applications such as switching regulators, switching |) > converters, motor drivers, relay drivers, and drivers for DRAIN high-power bipolar switching transistors requiring high DRAIN O }- speed and iow gate-drive power. These types can be (Tas) operated directly from integrated circuits. ml > The IRFPC-types are supplied in the JEDEC TO-247 ToP VIEW *. ATE plastic package. JEDEC TO-247 Absolute Maximum Ratings Parameter IRFPC40R IRFPC42R Units lo @ Tc = 25C Continuous Drain Current 68 5.9 A Ip @ Te = 100C Continuous Drain Current 43 3.7 A lpm Pulsed Drain Current 27 24 A Po @ Tc = 25C Max. Power Dissipation 150 WwW Linear Derating Factor 1.2 wc Ves Gate-to-Source Voltage +20 Vv 41 Eas Single Pulse Avalanche Energy @ (See Fg. 14) mJ lar Avalanche Current 68 (Repetitive or Non-Repetitive) (See Enr) A tai 15 Ean Repetitive Avalanche Energy (See lan) mJ Ty Operating Junction Tste Storage Temperature Range ~55 to 150 c Lead Temperature 300 [0.063 in. (1.6mm) from case for 10s] C 6-314Rugged Power MOSFETs Electrical Characteristics @ T, = 25C (Uniess Otherwise Specified) IRFPC40R, IRFPC42R P. Type Min. | Typ. | Max. | Units Test Conditions BVoss Ovileee Breakdown ALL 600 _ _ Vv Ves = OV, Ip = 250uA Toon Snemaaeess nent =H] 9 | va=sov=are totem On-State Drain Current @ IRFPC40R | _ 6.8 _ _ A | Vos > lniow x Rosiom Max. IRFPC42Rj 5.9 Ves = 10V Vesun Gate Threshold Voltage ALL 2.0 - 4.0 Vv Vos = Vas, Ip = 250uA | Gr Forward Transconductance @ ALL 49 7.3 __| S$) |_ Vos = 100V, los = 3.7A loss Zero Gate Voitage ALL = - 250 uA Vos = Max. Rating, Vos =0V Drain Current = 1000 Vos = 0.8 x Max. Rating, Vas = OV, Ty = 125C) lass | Gate-to-Source Leakage Forward ALL _ - 500 nA_ | Vas = 20V lass | Gate-to-Source Leakage Reverse ALL _ - -500 nA | Vas = -20V Qs Total Gate Charge ALL _ 40 nC_]| Vos = 10V, Ip = 6.2A_ Qa _Gate-to-Source Charge ALL | 55 | 83 | nc oes Fee Rating Qos Gate-to-Drain (Miller) Charge ALL _ 20 30 nC | (independent of operating temperature) taom _Turn-On Delay Time ALL - 13 20 ns | Voo = 200V, Ip = 6.2A, Re = 9.19 t Rise Time ALL _ 18 27 ns Ro = 470 tom Turn-Off Delay Time ALL - 55 83 ns | See Fig. 15 tr Fall Time ALL - 20 30 ns (Independent of operating temperature) Lo Internal Drain Inductance ALL _ 45 _ nH | Measured fromthe {| Modified MOSFET drain lead, 6mm (0.25| symbol showing the in.) from package to | internal inductances. center of die. Ls Internal Source Inductance ALL _ 75 - nH Measured from the o source lead, 6mm (0.25 in.) from fi package to source bonding pad. $ Ci _ Input Capacitance ALL ~ 1300 _ pF | Vas = OV, Vos = 25V Cos Output Capacitance ALL _ 160 _ pF | f= 1.0iMHz| Cus Reverse Transfer Capacitance ALL 45 pF | See Fig. 10 Ric Junction-to-Case ALL = = 0.83 [C/W Rncs Case-to-Sink ALL _ 0.24 - C/W | Mounting surface flat, smooth, and greased Ria Junction-to-Ambient ALL a 40 | C/W | Typical-socket mount Mounting Torque ALL _ 10 |in.elbs.| Standard 6-32 screw Source-Drain Diode Ratings and Characteristics Parameter Type Min. | Typ. | Max. | Units Test Conditions Is Continuous Source Current ALL - - 6.8 A Modified MOSFET symbol showing o (Body Diode) the integral Reverse p-n es) junction rectifier. 8 Iam (Body Dinda) Gurrent ALL _ _ 27 A J / Vsp Diode Forward Voltage @ ALL = - 1.5 Vv Ty = 25C, Is = 6.2A, Vas = OV te Reverse Recovery Time ALL 200 450 940 ns Ty = 25C, Ip = 6.2A, di/dt = 100A/us Qaa Reverse Recovery Charge ALL 1.8 3.8 79 uC ton Forward Turn-on Time ALL intrinsic turn-on time is igible. Turn-on speed is substantially controlled by Ls + Lo. @ Repetitive Rating: Pulse width limited by maximum junction temperature (see figure 5). @ @ Voo = SOV, Starting Ty = 25C, L = 16MH, Re = 252, Peak I = 6.8A @Pulse width = 300us; Duty Cycle = 2% 6-315Rugged Power MOSFETs IRFPC40R, IRFPC42R Ip. DRAIN CURRENT (AMPERES) Ip, ORAIN CURRENT (AMPERES) 6-316 Ip, ORAIN CURRENT (AMPERES) 4. 0 4 10 Veg: GATE-TO-SOURCE VOLTAGE (VOLTS) Vos: TAGE (VOLTS) Fig. 1 - Typical Output Characteristics Fig. 2 - Typical Transfer Characteristics SE TEST OPERATION IN THIS AREA BY Rpg(ON) ieee i 2A N a w =z wu a =z < E z w 4 = 5 3 z = 6 8 ra 2} To = 25C Ty = 150C 04 Q = : 7 1 , wo 7 * Soe 103 104 2 Vps, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vpg. DRAIN-TO-SOURCE VOLTAGE {VOLTS} 9208-43142 Fig. 3 - Typical Saturation Characteristics Fig. 4 - Maximum Safe Operating Area 10 HOLE feta Ss n NOTES: 1. DUTY FACTOR, D=ty/to 2. PEAK Ty=Poy X Zingc + Te 1075 1074 1073 1072 0.41 1 10 ty. RECTANGULAR PULSE DURATION (SECONOS) THERMAL RESPONSE (Zp jc) i > i w Fig. 5 - Maximum Effective Transient Thermal irnpedance, Junction-to-Case Vs. Pulse DurationRugged Power MOSFETs IRFPC40R, IRFPC42R 10 T y#150C TRANSCONOUCTANCE (SIEMENS) Sts: Ipg, REVERSE ORAIN CURRENT (AMPERES) wn ty ) 4 o 10 OD 0. : . : 1.5 Ip. DRAIN CURRENT (AMPERES) Vgp. SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 6 - Typical Transconductance Vs. Drain Current Fig. 7 - Typical Source-Drain Diode Forward Voltage 12s w 3 Ip = 6.2 z 3 1.15 wo w z o we 3 J 1.05 3 a 4 35 oF 33 0.95 $1.2 e~ Zz 2 3 & 3 0.85 3 0.6 8. 2 e Yes =m] 8. - 100 120 140 1 0. a0 > 1 12 140 1 Ty, JUNCTION TEMPERATURE ( C) Ty JUNCTION TEMPERATURE ( C) Fig. 8 - Breakdown Voltage Vs. Temperatura Fig. 9 - Normalized On-Resistance Vs. Temperature 3000 20 + Cos + Cog Cys SHORTED a C,. - - 2400 we Cog! (Cag * Cog) 3 16 Coss * Cas * gs Cgg / Myg * Cog! = z * Cys * Cog w s 7 < x w 1800 a 12 > Zz w - o _ a 5 3 a 1200 & 3a @ I vv o v G 2 < 600 S a4 8 > FOR TEST CIRCUIT SFE FIGURE 16 9 oO 10 10? Yog ORAIN-TO-SOURCE VOLTAGE [vOLTS) Qg. TOTAL GATE CHARGE {nC} Fig. 10 - Typical Capacitance Vs. Drain-to-Source Voltage Fig. 11 - Typical Gate Charge Vs. Gate-to-Source Voltage 6-317Rugged Power MOSFETs IRFPC40R, IRFPC42R a ORAIN-TO-SOURCE ON RESISTANCE w Ros (on) U0. b Ip. DRAIN CURRENT (AMPERES) Fig. 12 - Typical On-Resistance Vs. Drain Current VARY tp TO O8TAN REQUIRED PEAK 4, TFL Fig. 14a - Unclamped inductive Test Circuit 8Ypss o- om ond Ae ee es ee oe Fig. 14b - Unclamped inductive Waveforms . our = Yoo PULSE WOTN s Tus DUTY FACTOR 50 1% Fig. 15a - Switching Time Test Circuit 6-318 DAAIN CURRENT (AMPERES) Ip. Tc. CASE TEMPERATURE (C) Fig. 13 - Maximum Drain Current Vs. Case Temperature 500 PEAK TL = 6.88 = Sov 400 300 200 100 Eas. SINGLE PULSE AVALANCHE ENERGY (mJ) STARTING Ty JUNCTION TEMPERATURE { C) Fig. 14c - Maximum Avalanche Energy Vs. Starting Junction Temperature Soni WN}, A jo oho __-0} feet Fig. 150 - Switching Time WavelormeRugged Power MOSFETs IRFPC40R, IRFPC42R cunnent +05 REGULATOR oreo SAME TYPE = e aS OUT rey | Oo IS | cp" tr eet Og: IW Pe me mmm me TS + p> Ogs =f Ogg >} ( = xs 1 t 6 ) our ~ Ve 15a s Soutace Ota nnn AMF 0 05 __ content = cues SAMPLING SAMPLING CHARGE RESISTOR RESISTOR Fig. 16a - Basic Gate Charge Waveform Fib. 16b - Gate Charge Test Circuit 6-319