BFG325/XR,215 - NXP SEMICONDUCTORS

1. Product profile

1.1 General description

NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143R plastic package.

1.2 Features and benefits

High power gain

Low noise figure

High transition frequency

Gold metallization ensures excellent reliability

1.3 Applications

Intended for Radio Frequency (RF) front end application s in the GHz range, such as:

analog and digital cellular telephones

cordless telephones (Cordless Telephone (CT), Personal Communication

Network (PCN), Digital Enhanced Cordless Telecommunications (DECT), etc.)

radar detectors

pagers

Satellite Antenna TeleVision (SATV) tuners

repeater amplifiers in fiber-optic systems

1.4 Quick reference data

BFG325/XR

NPN 14 GHz wideband transistor

Rev. 2 — 15 September 2011 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCBO collector-base voltage open emitter - - 15 V

VCEO collector-emitter voltage open base - - 6 V

ICcollector current (DC) - - 35 mA

Ptot total power dissipation Tsp 90 C[1] - - 210 mW

hFE DC current gain IC=15mA; V

CE =3V;

Tj=25C60 100 200

CCBS collector-base

capacitance VCB = 5 V; f = 1 MHz;

emitter grounded - 0.26 0.4 pF

fTtransition frequency IC=15mA; V

CE =3V;

f=1GHz; T

amb =25C-14-GHz

Product data sheet Rev. 2 — 15 September 2011 2 of 13

NXP Semiconductors BFG325/XR

NPN 14 GHz wideband transistor

[1] Tsp is the temperature at the soldering point of the collector pin.

[2] Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG, see Figure 4.

2. Pinning information

3. Ordering information

4. Marking

[1] * = p: made in Hong Kong.

Gmax maximum power gain[2] IC=15mA; V

CE =3V;

f=1.8GHz; T

amb =25C- 18.3 - dB

s212insertion power gain IC=15mA; V

CE =3V;

f=1.8GHz; T

amb =25C;

ZS=Z

L=50

-14-dB

NF noise figure s=opt; IC=3mA;

VCE =3V; f=2GHz -1.1-dB

Table 1. Quick reference data …continued

Symbol Parameter Conditions Min Typ Max Unit

Table 2. Pinning

Pin Description Simplified outline Symbol

1 collector

2emitter

3base

4emitter

sym086

2, 4

Tabl e 3. Ordering i nfo rmation

Type number Package

Name Description Version

BFG325/XR SC-61AA plastic surface mounted package; reverse pinning;

4 leads SOT143R

Table 4. Marking codes

Type number Marking code[1]

BFG325/XR S2*

Product data sheet Rev. 2 — 15 September 2011 3 of 13

NXP Semiconductors BFG325/XR

NPN 14 GHz wideband transistor

5. Limiting values

[1] Tsp is the temperature at the soldering point of the collector pin.

6. Thermal characteristics

[1] Tsp is the temperature at the soldering point of the collector pin.

7. Characteristics

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 15 V

VCEO collector-emitter voltage open base - 6 V

VEBO emitter-base voltage open collector - 2 V

ICcollector current (DC) - 35 mA

Ptot total power dissipation Tsp 90 C[1] - 210 mW

Tstg storage temperature 65 +175 C

Tjjunction temperature - 175 C

Table 6. Thermal characteristics

Symbol Parameter Conditions Typ Unit

Rth(j-sp) thermal resistance from junction to solder point Tsp 90 C[1] 405 K/W

Table 7. Characteristics

Tj=25



C; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off current IE=0A; V

CB =5V - - 15 nA

hFE DC current gain IC=15mA; V

CE = 3 V 60 100 200

CCBS collector-base capacitance VCB = 5 V; f = 1 MHz; emitter grounded - 0.26 0.4 pF

CCES collector-emitter capacitance VCE = 5 V; f = 1 MHz; base grounded - 0.27 - pF

CEBS emitter-base capacitance VEB = 0.5 V; f = 1 MHz; collector grounded - 0.53 - pF

fTtransition frequency IC=15mA; V

CE =3V; f=1GHz;

Tamb =25C-14-GHz

Gmax maximum power gain[1] IC=15mA; V

CE =3V; f=1.8GHz;

Tamb =25C- 18.3 - dB

s212insertion power gain IC=15mA; V

CE =3V; T

amb =25C;

ZS=Z

L=50

f = 1.8 GHz - 14 - dB

f=3GHz - 10 - dB

NF noise figure s=opt; IC=3mA; V

CE =3V; f=2GHz - 1.1 - dB

PL(1dB) output power at 1 dB gain

compression IC= 15 mA; VCE =3V; f=1.8GHz;

Tamb =25C; ZS=Z

L=50

-8.7-dBm

IP3 third order intercept point IC=15mA; V

CE =3V; f=1.8GHz;

Tamb =25C; ZS=Z

L=50

- 19.4 - dBm

Product data sheet Rev. 2 — 15 September 2011 4 of 13

NXP Semiconductors BFG325/XR

NPN 14 GHz wideband transistor

[1] Gmax is the maximum power gain, if K > 1. If K < 1 then Gmax = MSG, see Figure 4.

K is the Rollet stability factor: where .

MSG = maximum stable gain.

K1Ds

2s11 2

–s22 2

–+

s12



-----------------------------------------------------------

Ds s11 s22

s12 s21

–=

Fig 1. Power derating curve Fig 2. Collector current as a function of

collector-emitter voltage; typical values

IC=0mA; f=1MHz. I

C=15mA; V

CE =3V.

Fig 3. Collector-base capacitance as a function of

collector-base voltage; typical values Fig 4. Gain as a function of frequency; typical values

Tsp (°C)

0 20015050 100

001aac147

100

150

200

250

Ptot

(mW)

001aac148

(V)

0653142

(mA)

= 350 μA

300 μA

250 μA

150 μA

100 μA

200 μA

50 μA

VCB (V)

054231

001aac149

0.26

0.30

0.34

CCBS

(pF)

0.22

001aac150

(dB)

f (MHz)

10 104

103

102

Gmax

MSG

s21 2

Product data sheet Rev. 2 — 15 September 2011 5 of 13

NXP Semiconductors BFG325/XR

NPN 14 GHz wideband transistor

VCE =3V; I

C=15mA; Z

o=50.

Fig 5. Common emitter input reflection coefficient (s11); typical values

VCE =3V; I

C=15mA.

Fig 6. Common emitter forward transmission coefficient (s21); typical values

001aac151

90°

−90°

0.50.2

+0.2

−5

−2

−0.2

+0.5

−0.5

−1

110 0

0.2

0.6

0.4

0.8

1.0

−45°−135°

45°135°

180°0°

3 GHz

40 MHz

001aac152

90°

−90°

−45°−135°

45°135°

0°

180°50 40 30 20 10

40 MHz 3 GHz

Product data sheet Rev. 2 — 15 September 2011 6 of 13

NXP Semiconductors BFG325/XR

NPN 14 GHz wideband transistor

VCE =3V; I

C=15mA.

Fig 7. Common emitter reverse transmission coefficient (s12); typical values

VCE =3V; I

C=15mA; Z

o=50.

Fig 8. Common emitter output reflection coefficient (s22); typical values

001aac153

90°

−90°

−45°−135°

45°135°

0°

180°0.5 0.4 0.3 0.2 0.1

3 GHz

40 MHz

001aac154

90°

−90°

0.50.2

+0.2

−5

−2

−0.2

+0.5

−0.5

−1

110 0

0.2

0.6

0.4

0.8

1.0

−45°−135°

45°135°

180°0°

40 MHz

3 GHz

Product data sheet Rev. 2 — 15 September 2011 7 of 13

NXP Semiconductors BFG325/XR

NPN 14 GHz wideband transistor

8. Application information

Table 8. SPICE parameters of the BFG325 DIE

Sequence Parameter Value Unit

1IS 26.6aA

2BF 200-

3NF 1-

4VAF 40V

5IKF 105mA

6ISE 2.3fA

7NE 2.114-

8BR 10-

9NR 1-

10 VAR 2.5 V

11 IKR 10 A

12 ISC 0 aA

13 NC 1.5 -

14 RB 3.6 

15 RE 1.5 

16 RC 2.6 

17 CJE 185.6 fF

18 VJE 890 mV

19 MJE 0.294 -

20 CJC 77.06 fF

21 VJC 601 mV

22 MJC 0.159 -

23 XCJC 1 -

24 FC 0.7 -

25 TF 8.1 ps

26 XTF 10 -

27 VTF 1000 V

28 ITF 150 mA

29 PTF 0 deg

30 TR 0 ns

31 KF 0 -

32 AF 1 -

33 TNOM 25 C

34 EG 1.014 eV

35 XTB 0 -

36 XTI 8 -

37 Q1.AREA 2.5 -

Product data sheet Rev. 2 — 15 September 2011 8 of 13

NXP Semiconductors BFG325/XR

NPN 14 GHz wideband transistor

Fig 9. Package equivalent circuit of SOT143R

Table 9. List of components; see Figure 9

Designation Value Unit

CCB 17 fF

CBE 84 fF

CCE 191 fF

C_base_pad 67 fF

C_emitter_pad 142 fF

LB0.95 nH

LE0.40 nH

L10.12 nH

L20.21 nH

L30.06 nH

BJT1

C_base_pad

CCB

CHIP

CBE

CCE

C_emitter_pad

001aac155

Product data sheet Rev. 2 — 15 September 2011 9 of 13

NXP Semiconductors BFG325/XR

NPN 14 GHz wideband transistor

9. Package outline

Fig 10. Package outline SOT143R (SC-61AA)

UNIT A

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

mm 1.1

0.9

max

0.1

0.88

0.78

0.15

0.09

3.0

2.8

1.4

1.2

HEywvQ

2.5

2.1 0.55

0.25 0.45

0.25

1.9

1.7

0.1 0.10.2

0.48

0.38

DIMENSIONS (mm are the original dimensions)

SOT143R SC-61AA 04-11-16

06-03-16

0 1 2 mm

scale

Plastic surface-mounted package; reverse pinning; 4 leads SOT143R

vMA

detail X

Product data sheet Rev. 2 — 15 September 2011 10 of 13

NXP Semiconductors BFG325/XR

NPN 14 GHz wideband transistor

10. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change no tice Supersedes

BFG325_XR v.2 20110915 Product data sheet - BFG325_XR v.1

Modifications: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate.

•Package outline drawings have been updated to the latest version.

BFG325_XR v.1

(9397 750 14247) 20050202 Product data sheet - -

Product data sheet Rev. 2 — 15 September 2011 11 of 13

NXP Semiconductors BFG325/XR

NPN 14 GHz wideband transistor

11. Legal information

11.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of device (s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

11.2 Definitions

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with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress rating s only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the obj ective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 2 — 15 September 2011 12 of 13

NXP Semiconductors BFG325/XR

NPN 14 GHz wideband transistor

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Non-automotive qualified products — Unless this data sheet expressly

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the product is not suitable for automotive use. It i s neit her qua lified nor tested

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In the event that customer uses the product for design-in and use in

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11.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

12. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors BFG325/XR

NPN 14 GHz wideband transistor

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 15 September 2011

Document identifier: BFG325_XR

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Applic ation information. . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12 Contact information. . . . . . . . . . . . . . . . . . . . . 12

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13