VS-50RIA Series www.vishay.com Vishay Semiconductors Medium Power Phase Control Thyristors (Stud Version), 50 A FEATURES * * * * * * * * TO-65 (TO-208AC) PRIMARY CHARACTERISTICS IT(AV) 50 A VDRM/VRRM 100 V, 200 V, 400 V, 600 V, 800 V, 1000 V, 1200 V VTM 1.60 V IGT 100 mA TJ -40 C to 125 C Package TO-65 (TO-208AC) Circuit configuration Single SCR High current rating Excellent dynamic characteristics dV/dt = 1000 V/s option Superior surge capabilities Standard package Metric threads version available Types up to 1200 V VDRM/VRRM Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS * * * * Phase control applications in converters Lighting circuits Battery charges Regulated power supplies and temperature and speed control circuit MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC IT(RMS) ITSM I2t A 94 C 80 A 1430 60 Hz 1490 50 Hz 10.18 60 Hz 9.30 Typical TJ UNITS 50 50 Hz VDRM/VRRM tq VALUES A kA2s 100 to 1200 V 110 s -40 to +125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VS-50RIA VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE (1) V VRSM, MAXIMUM IDRM/IRRM MAXIMUM AT NON-REPETITIVE PEAK VOLTAGE (2) TJ = TJ MAXIMUM mA V 10 100 150 20 200 300 40 400 500 60 600 700 80 800 900 100 1000 1100 120 1200 1300 15 Notes (1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/s (2) For voltage pulses with t 5 ms p Revision: 21-Sep-17 Document Number: 93711 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50RIA Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current IT(AV) TEST CONDITIONS 180 sinusoidal conduction IT(RMS) t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t I2t for fusing VALUES UNITS 50 A 94 C 80 A No voltage reapplied 1430 100 % VRRM reapplied 1200 No voltage reapplied 1490 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied A 1255 10.18 9.30 7.20 kA2s 6.56 t = 0.1 to 10 ms, no voltage reapplied, TJ = TJ maximum 101.8 Low level value of threshold voltage VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.94 High level value of threshold voltage VT(TO)2 ( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ maximum 1.08 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 4.08 High level value of on-state slope resistance rt2 ( x IT(AV) < I < 20 x x IT(AV)), TJ = TJ maximum 3.34 Maximum on-state voltage VTM Ipk = 157 A, TJ = 25 C 1.60 Maximum holding current IH TJ = 25 C, anode supply 22 V, resistive load, initial IT = 2 A 200 Latching current IL Anode supply 6 V, resistive load 400 kA2s V m V mA SWITCHING PARAMETER Maximum rate of rise of turned-on current SYMBOL VDRM 600 V VDRM 1600 V dI/dt TEST CONDITIONS TC = 125 C, VDM = Rated VDRM, Gate pulse = 20 V, 15 , tp = 6 s, tr = 0.1 s maximum ITM = (2 x rated dI/dt) A VALUES UNITS 200 A/s 100 Typical delay time td TC = 25 C, VDM = Rated VDRM, ITM = 10 A dc resistive circuit Gate pulse = 10 V, 15 source, tp = 20 s 0.9 Typical turn-off time tq TC = 125 C, ITM = 50 A, reapplied dV/dt = 20 V/s dIr/dt = - 10 A/s, VR = 50 V 110 s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage SYMBOL dV/dt TEST CONDITIONS VALUES TJ = TJ maximum linear to 100 % rated VDRM 200 TJ = TJ maximum linear to 67 % rated VDRM 500 (1) UNITS V/s Note (1) Available with dV/dt = 1000 V/s, to complete code add S90 i.e. 50RIA120S90 Revision: 21-Sep-17 Document Number: 93711 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50RIA Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL Maximum peak gate power PGM Maximum average gate power TEST CONDITIONS VALUES TJ = TJ maximum, tp 5 ms 10 W PG(AV) 2.5 Maximum peak positive gate current IGM 2.5 Maximum peak positive gate voltage +VGM 20 Maximum peak negative gate voltage -VGM 10 IGT 250 TJ = 25 C Maximum required gate trigger current/voltage are the lowest value which will trigger all units 6 V anode to cathode applied TJ = 125 C DC gate voltage required to trigger VGT A V TJ = - 40 C DC gate current required to trigger UNITS TJ = - 40 C 100 mA 50 3.5 V TJ = 25 C 2.5 DC gate current not to trigger IGD TJ = TJ maximum, VDRM = Rated voltage DC gate voltage not to trigger VGD TJ = TJ maximum Maximum gate current/voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied 5.0 mA 0.2 V VALUES UNITS -40 to +125 C THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation 0.35 Maximum thermal resistance, case to heat sink RthCS Mounting surface, smooth, flat and greased 0.25 K/W Non-lubricated threads 3.4 + 0 - 10 % (30) Lubricated threads 2.3 + 0 - 10 % (20) Allowable mounting torque Approximate weight Case style See dimensions - link at the end of datasheet N*m (lbf * in) 28 g 1.0 oz. TO-65 (TO-208AC) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180 0.078 0.057 120 0.094 0.098 90 0.120 0.130 60 0.176 0.183 30 0.294 0.296 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 21-Sep-17 Document Number: 93711 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50RIA Series 130 Vishay Semiconductors Maximum Average On-state Power Loss (W) Maximum Allowable Case Temperature (C) www.vishay.com 50RIA Series RthJC (DC) = 0.35 K/W 120 Conduction Angle 110 30 60 90 100 120 180 90 0 10 20 30 40 50 100 DC 180 120 90 60 30 90 80 70 60 50 RMS Limit 40 30 Conduction Period 20 50RIA Series TJ = 125C 10 0 0 60 10 130 1300 50RIA Series RthJC (DC) = 0.35 K/W 120 Conduction Period 100 90 60 120 30 180 DC 80 0 10 20 30 40 50 60 70 80 50 RMS Limit 30 Conduction Angle 50RIA Series TJ = 125C 10 0 0 10 20 30 80 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial TJ = 125C 1100 @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1000 900 800 700 50RIA Series 600 1500 180 120 90 60 30 20 70 40 10 100 Fig. 5 - Maximum Non-Repetitive Surge Current 80 40 60 1200 1 Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Fig. 2 - Current Ratings Characteristics 60 50 Number Of Equal Amplitude Half Cycle Current Pulses (N) Average On-state Current (A) 70 40 Fig. 4 - On-State Power Loss Characteristics Peak Half Sine Wave On-state Current (A) Maximum Allowable Case Temperature (C) Fig. 1 - Current Ratings Characteristics 90 30 Average On-state Current (A) Average On-state Current (A) 110 20 50 Average On-state Current (A) Fig. 3 - On-State Power Loss Characteristics 1400 1300 1200 1100 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial TJ = 125C No Voltage Reapplied Rated VRRM Reapplied 1000 900 800 700 600 500 0.01 50RIA Series 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 21-Sep-17 Document Number: 93711 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50RIA Series www.vishay.com Vishay Semiconductors Instantaneous On-state Current (A) 1000 100 TJ = 25C TJ = 125C 10 50RIA Series 1 0.5 1 1.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V) Transient Thermal Impedance ZthJ-hs (K/W) Fig. 7 - Forward Voltage Drop Characteristics 1 Steady State Value RthJ-hs = 0.35 K/W 0.1 50RIA Series 0.01 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 30 ohms; tr<=0.5 s b) Recommended load line for <=30% rated di/dt : 20V, 65 ohms tr<=1 s 10 (b) (a) Tj=125 C 1 VGD IGD 0.1 0.001 0.01 (1) PGM = 10W, tp = 5ms (2) PGM = 20W, tp = 2.5ms (3) PGM = 50W, tp = 1ms (4) PGM = 100W, tp = 500s Tj=-40 C Tj=25 C Instantaneous Gate Voltage (V) 100 (1) (2) 50RIA Series 0.1 1 (3) (4) Frequency Limited by PG(AV) 10 100 1000 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics Revision: 21-Sep-17 Document Number: 93711 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-50RIA Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 50 RIA 120 S90 M 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current code 3 - Essential part number 4 - Voltage code x 10 = VRRM (see Voltage Ratings table) 5 - Critical dV/dt: None = 500 V/s (standard value) S90 = 1000 V/s (special selection) 6 - None = stud base TO-65 (TO-208AC) 1/4" 28UNF-2A M = stud base TO-65 (TO-208AC) M6 x 1 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95334 Revision: 21-Sep-17 Document Number: 93711 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-208AC (TO-65) DIMENSIONS in millimeters (inches) 5.1/7.6 (0.2/0.3) C O 4.1 (O 0.16) 3 min. (0.118 min.) G O 1.5 (O 0.06) 2.5/3.6 (0.1/0.14) 31 max. (1.22 max.) 22.4 max. (0.88 max.) O 15 (O 0.59) 14.5 max. (0.57 max.) 10.7/11.5 (0.42/0.46) A Note: A = Anode C = Cathode G = Gate 1/4"-28UNF-2A for metric device M6 x 1 O 19.2 (O 0.75) 17.2/17.35 (0.67/0.68) Across flats 0.55 0.03 0.94 0.04 1.7/1.8 (0.06/0.07) 2.7 (0.106) Revision: 02-Jun-17 Document Number: 95334 1 For technical questions within your region: DiodesAmercas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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