VS-ST230SPbF Series www.vishay.com Vishay Semiconductors Phase Control Thyristors (Stud Version), 230 A FEATURES * Center amplifying gate * International standard case TO-209AB (TO-93) RoHS * Hermetic metal case with ceramic insulator COMPLIANT (Also available with glass-metal seal up to 1200 V) * Compression bonded encapsulation for heavy duty operations such as severe thermal cycling TO-209AB (TO-93) * Compliant to RoHS Directive 2011/65/EU * Designed and qualified for industrial level TYPICAL APPLICATIONS * DC motor controls PRODUCT SUMMARY * Controlled DC power supplies IT(AV) 230 A * AC controllers MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS IT(AV) TC IT(RMS) ITSM I2t UNITS 230 A 85 C 360 A 50 Hz 5700 60 Hz 5970 50 Hz 163 60 Hz 149 VDRM/VRRM tq VALUES Typical TJ A kA2s 400 to 1600 V 100 s - 40 to 125 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER ST230S Revision: 05-Mar-12 VOLTAGE CODE VDRM/VRRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM IDRM/IRRM MAXIMUM NON-REPETITIVE PEAK VOLTAGE AT TJ = TJ V MAXIMUM mA 04 400 500 08 800 900 12 1200 1300 16 1600 1700 30 Document Number: 94399 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST230SPbF Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current at case temperature Maximum RMS on-state current IT(AV) IT(RMS) TEST CONDITIONS 180 conduction, half sine wave DC at 78 C case temperature t = 10 ms Maximum peak, one-cycle non-repetitive surge current ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t No voltage reapplied UNITS 230 A 85 C 360 5700 No voltage reapplied 100 % VRRM reapplied VALUES 5970 4800 Sinusoidal half wave, initial TJ = TJ maximum 100 % VRRM reapplied 5000 163 148 115 t = 0.1 to 10 ms, no voltage reapplied 1630 VT(TO)1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.92 High level value of threshold voltage VT(TO)2 (I > x IT(AV)), TJ = TJ maximum 0.98 Low level value of on-state slope resistance rt1 (16.7 % x x IT(AV) < I < x IT(AV)), TJ = TJ maximum 0.88 High level value of on-state slope resistance rt2 (I > x IT(AV)), TJ = TJ maximum 0.81 Ipk = 720 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.55 VTM Maximum holding current IH Maximum (typical) latching current IL TJ = 25 C, anode supply 12 V resistive load kA2s 105 Low level value of threshold voltage Maximum on-state voltage A 600 1000 (300) kA2s V m V mA SWITCHING PARAMETER Maximum non-repetitive rate of rise of turned-on current SYMBOL dI/dt TEST CONDITIONS Gate drive 20 V, 20 , tr 1 s TJ = TJ maximum, anode voltage 80 % VDRM VALUES UNITS 1000 A/s Typical delay time td Gate current 1 A, dIg/dt = 1 A/s Vd = 0.67 % VDRM, TJ = 25 C 1.0 Typical turn-off time tq ITM = 300 A, TJ = TJ maximum, dIF/dt = 20 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 V 100 , tp = 500 s 100 SYMBOL TEST CONDITIONS VALUES UNITS s BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage dV/dt TJ = TJ maximum linear to 80 % rated VDRM 500 V/s Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = TJ maximum, rated VDRM/VRRM applied 30 mA Revision: 05-Mar-12 Document Number: 94399 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST230SPbF Series www.vishay.com Vishay Semiconductors TRIGGERING PARAMETER SYMBOL PGM Maximum peak gate power PG(AV) Maximum average gate power Maximum peak positive gate current IGM Maximum peak positive gate voltage + VGM Maximum peak negative gate voltage - VGM VALUES TEST CONDITIONS TYP. TJ = TJ maximum, tp 5 ms 10.0 TJ = TJ maximum, f = 50 Hz, d% = 50 2.0 TJ = TJ maximum, tp 5 ms 3.0 TJ = TJ maximum, tp 5 ms TJ = 125 C TJ = - 40 C VGT DC gate voltage required to trigger TJ = 25 C TJ = 125 C Maximum gate current/ voltage not to trigger is the maximum value which will not trigger any unit with rated VDRM anode to cathode applied IGD DC gate current not to trigger TJ = TJ maximum VGD DC gate voltage not to trigger A V 5.0 Maximum required gate trigger/current/voltage are the lowest value which will trigger all units 12 V anode to cathode applied TJ = 25 C UNITS W 20 TJ = - 40 C IGT DC gate current required to trigger MAX. 180 - 90 150 40 - 2.9 - 1.8 3.0 1.2 - mA V 10 mA 0.25 V VALUES UNITS THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum operating junction temperature range TEST CONDITIONS TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, case to heatsink RthC-hs DC operation 0.10 Mounting surface, smooth, flat and greased 0.04 Non-lubricated threads 31 (275) Lubricated threads 24.5 (210) C K/W Mounting torque, 10 % Approximate weight 280 Case style See dimensions - link at the end of datasheet N*m (lbf in) g TO-209AB (TO-93) RthJC CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION 180 0.016 0.012 120 0.019 0.020 90 0.025 0.027 60 0.036 0.037 30 0.060 0.060 TEST CONDITIONS UNITS TJ = TJ maximum K/W Note * The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Revision: 05-Mar-12 Document Number: 94399 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST230SPbF Series Vishay Semiconductors Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) www.vishay.com 130 ST230S Series RthJC (DC) = 0.1 K/W 120 O 110 Conduction Angle 100 90 30 90 60 120 180 80 0 50 100 150 200 250 Average On-State Current (A) 130 ST230S Series RthJC (DC) = 0.1 K/W 120 110 O Conduction Period 100 90 30 80 90 120 70 0 100 DC 180 200 300 400 Average On-State Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics 350 8 W K/ ta el -D R 0.8 K /W 1.2 K/W 100 ST230S Series TJ = 125 C 50 0. Conduction Angle = O 150 /W A hS RMS Limit 0.2 K 0.3 / W K/ W 0.4 K /W 0.5 K /W /W 200 0.1 6K Rt 250 180 120 90 60 30 300 1K 0. Maximum Average On-State Power Loss (W) 60 0 0 50 100 150 200 250 Average On-State Current (A) 50 75 100 125 Maximum Allowable Ambient Temperature (C) 450 DC 180 120 90 60 30 400 ST230S Series TJ = 125 C 50 0.3 K /W 0.4 K /W 0.5 K /W 0.8 K / W R 100 /W ta Conduction Period 150 el O D RMS Limit 200 /W - 250 /W 0.2 K SA K 0.1 6K th /W 08 0. 300 0.1 K = 350 R Maximum Average On-State Power Loss (W) Fig. 3 - On-State Power Loss Characteristics 1.2 K/W 0 0 50 100 150 200 250 300 350 Average On-State Current (A) 400 50 75 100 125 Maximum Allowable Ambient Temperature (C) Fig. 4 - On-State Power Loss Characteristics Revision: 05-Mar-12 Document Number: 94399 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST230SPbF Series Peak Half Sine Wave On-State Current (A) 5500 Vishay Semiconductors At Any Rated Load Condition And With Rated VRRM Applied Following Surge. Initial TJ = 125 C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 5000 4500 4000 3500 3000 2500 ST230S Series 2000 1 10 100 6000 5500 5000 4500 Maximum Non Repetitive Surge Current vs. Pulse Drain Duration. Control of Conduction May Not Be Maintained Initial TJ = 125 C No Voltage Reapplied Rated VRRM Reapplied 4000 3500 3000 2500 ST230S Series 2000 0.01 0.1 1 Number Of Equal Amplitude Half Cycle Current Pulses (N) Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-State Current (A) Peak Half Sine Wave On-State Current (A) www.vishay.com 10 000 1000 TJ = 25 C 100 TJ = 125 C ST230S Series 10 0.5 1.5 2.5 3.5 4.5 Instantaneous On-State Voltage (V) Transient Thermal Impedance ZthJC (K/W) Fig. 7 - On-State Voltage Drop Characteristics 1 Steady State Value RthJC = 0.1 K/W (DC Operation) 0.1 0.01 ST230S Series 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics Revision: 05-Mar-12 Document Number: 94399 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-ST230SPbF Series www.vishay.com 10 (1) PGM = 10 W, (2) PGM = 20 W, (3) PGM = 40 W, (4) PGM = 60 W, Rectangular gate pulse a) Recommended load line for rated dIF/dt : 20 V, 10 ; tr <=1 s b) Recommended load line for < = 30 % rated dIF/dt : 10 V, 10 tr < = 1 s tp = 4 ms tp = 2 ms tp = 1 ms tp = 0.66 ms (a) (b) VGD IGD 0.1 0.001 TJ =-40 C 1 TJ =25 C TJ =125 C Instantaneous Gate Voltage (V) 100 Vishay Semiconductors (1) Device: ST230S Series 0.01 (3) (4) (2) Frequency Limited by PG (AV) 0.1 1 10 100 Instantaneous Gate Current (A) Fig. 9 - Gate Characteristics ORDERING INFORMATION TABLE Device code VS- ST 23 0 S 16 P 0 V PbF 1 2 3 4 5 6 7 8 9 10 1 - Vishay Semiconductors product 2 3 - Thyristor Essential part number 4 - 0 = Converter grade 5 - S = Compression bonding stud 6 - Voltage code x 100 = VRRM (see Voltage Ratings table) 7 - P = Stud base 3/4"-16UNF2A threads 8 - 0 = Eyelet terminals (gate and auxiliary cathode leads) 1 = Fast-on terminals (gate and auxiliary cathode leads) 9 - 10 - V = Glass-metal seal (only up to 1200 V) None = Ceramic housing (over 1200 V) Lead (Pb)-free Note: For metric device M16 x 1.5 contact factory LINKS TO RELATED DOCUMENTS Dimensions Revision: 05-Mar-12 www.vishay.com/doc?95082 Document Number: 94399 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-209AB (TO-93) DIMENSIONS in millimeters (inches) 7) MI N. 4 (0.16) MAX. 19 (0.75) MAX. (0. 3 8.5 (0.33) DIA. C.S. 0.4 mm2 (0.0006 s.i.) Red cathode White gate Red shrink 38.5 (1.52) MAX. 16 (0.63) MAX. White shrink 220 (8.66) 10 (0.39) Red silicon rubber 90 (3.54) MIN. 210 (8.26) 10 (0.39) 22 Flexible leads C.S. 25 mm2 (0.039 s.i.) ( 0. 86 )M 9.5 4.3 (0.17) DIA. IN . Glass metal seal Fast-on terminals AMP. 280000-1 REF-250 28.5 (1.12) MAX. DIA. 27.5 (1.08) MAX. SW 32 3/4"-16UNF-2A (1) 35 (1.38) MAX. 19 (0.75) MAX. )M IN . 4 (0.16) MAX. 37 8.5 (0.33) DIA. C.S. 0.4 mm2 (0.006 s.i.) Red cathode White gate White shrink 16 (0.63) MAX. 38.5 (1.52) MAX. Red shrink . IN (0. 22 220 (8.66) 10 (0.39) Red silicon rubber 90 (3.54) MIN. 210 (8.26) 10 (0.39) Flexible leads C.S. 25 mm2 (0.039 s.i.) 86 9.5 (0. 4.3 (0.17) DIA. )M Ceramic housing 27.5 (1.08) MAX. DIA. 27.5 (1.08) MAX. SW 32 3/4"-16UNF-2A (1) 35 (1.38) MAX. Note (1) For metric device: M16 x 1.5 - length 21 (0.83) maximum Revision: 05-Mar-12 Document Number: 95082 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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