AUIRGDC0250
VCES = 1200V
IC = 81A @ TC = 100°C
VCE(on) typ. = 1.47V @ 33A
G C E
Gate Collector Emitter
AUTOMOTIVE GRADE
Parameter Max. Units
VCES Collector-to-Emitter Voltage 1200 V
IC @ TC = 25°C Continuous Collector Current 141
IC @ TC = 100°C Continuous Collector Current 81
ICM Pulse Collector Current, VGE = 15V 99
A
ILM Clamped Inductive Load Current, VGE = 20V 99
VGE Continuous Gate-to-Emitter Voltage ±20 V
Transient Gate-to-Emitter Voltage ±30
PD @ TC = 25°C Maximum Power Dissipation 543 W
PD @ TC = 100°C Maximum Power Dissipation 217
TJ Operating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 sec. (Through Hole Mounting) 300 (0.063 in. (1.6mm) from case)
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect
device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air
conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Base Part Number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRGDC0250 Super-TO-220 Tube 50 AUIRGDC0250
V 2.6
2019-04-18
1
Super-TO-220
AUIRGDC0250
*Qualification standards can be found at www.infineon.com
Benefits
Device optimized for soft switching applications
High Efficiency due to Low VCE(on), low switching losses
Rugged transient performance for increased reliability
Excellent current sharing in parallel operation
Low EMI
Thermal Resistance
Parameter Typ. Max.
Units
RJC (IGBT) Thermal Resistance Junction-to-Case (each IGBT) ––– 0.23
°C/W
RCS Thermal Resistance, Case-to-Sink (flat, greased surface) 0.50 –––
RJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– 62
Features
Low VCE (on) Planar IGBT Technology
Low Switching Losses
Square RBSOA
100% of the Parts Tested for ILM
Positive VCE (on) Temperature Coefficient
Reflow Capable per JDSD22-A113
Lead-Free, RoHS Compliant
Automotive Qualified *
E
C
G
n-channel
Application
PTC Heater
Relay Replacement
AUIRGDC0250
2
V 2.6
2019-04-18
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 1200 — — V VGE = 0V, IC = 250µA
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 1.2 — V/°C
VGE = 0V, IC = 1mA (25°C-150°C)
VCE(on) Collector-to-Emitter Saturation Voltage — 1.47 1.8 V IC = 33A, VGE = 15V, TJ = 25°C
— 1.56 — IC = 33A, VGE = 15V, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 — 6.0 V VCE = VGE, IC = 250µA
VGE(th)/TJ Threshold Voltage temp. coefficient — -15 — mV/°C VCE = VGE, IC = 250µA (25°C-150°C)
gfe Forward Transconductance — 30 — S
VCE = 50V, IC = 33A,PW = 20µS
ICES Collector-to-Emitter Leakage Current — — 250
µA VGE = 0V, VCE = 1200V, TJ = 25°C
— — 1000 VGE = 0V, VCE = 1200V,TJ = 150°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Qg Total Gate Charge (turn-on) — 151 227
nC
IC = 33A
Qge Gate-to-Emitter Charge (turn-on) — 26 39 VGE = 15V
Qgc Gate-to-Collector Charge (turn-on) — 62 93 VCC = 600V
Eoff Turn-Off Switching Loss — 15 16 mJ IC = 33A, VCC = 600V, VGE = 15V
td(off) Turn-Off delay time — 485 616 ns RG = 5, L = 400µH, TJ = 25°C
tf Fall time — 1193 1371 Energy losses include tail
Eoff Turn-Off Switching Loss — 29 — mJ IC = 33A, VCC = 600V, VGE = 15V
td(off) Turn-Off delay time — 689 — ns RG = 5, L = 400µH, TJ = 150°C
tf Fall time — 2462 — Energy losses include tail
Cies Input Capacitance — 3804 — VGE = 0V
Coes Output Capacitance — 161 — VCC = 30V
Cres Reverse Transfer Capacitance — 31 — f = 1.0Mhz
RBSOA Reverse Bias Safe Operating Area
TJ = 150°C, IC = 99A
FULL SQUARE VCC = 960V, Vp ≤ 1200V
Rg = 5, VGE = +20V to 0V
pF
Notes:
VCC = 80% (VCES), VGE = 20V, L = 400µH, RG = 5.
Pulse width limited by max. junction temperature.
R
is measured at TJ approximately 90°C.
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A.
Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements.
AUIRGDC0250
3
V 2.6
2019-04-18
25 50 75 100 125 150
TC (°C)
0
20
40
60
80
100
120
140
160
IC (A)
25 50 75 100 125 150
TC (°C)
0
100
200
300
400
500
600
Ptot (W)
1 10 100 1000 10000
VCE (V)
0.01
0.1
1
10
100
1000
IC (A)
10µsec
100µsec
Tc = 25°C
Tj = 150°C
Single Pulse
DC
1msec
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
25 50 75 100 125 150
TJ , Temperature (°C)
3.0
3.5
4.0
4.5
5.0
VGE(th), Gate Threshold Voltage (Normalized)
IC = 1mA
Fig. 2 - Power Dissipation vs.
Case Temperature
10 100 1000 10000
VCE (V)
1
10
100
1000
IC (A)
Fig. 5 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
Fig. 3 - Forward SOA
TC = 25°C, TJ 150°C; VGE =15V
0246810
VCE (V)
0
20
40
60
80
100
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
Fig. 4 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
AUIRGDC0250
4
V 2.6
2019-04-18
0246810
VCE (V)
0
20
40
60
80
100
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
0246810
VCE (V)
0
20
40
60
80
100
ICE (A)
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 7.0V
5101520
VGE (V)
0
1
2
3
4
5
6
7
8
VCE (V)
ICE = 17A
ICE = 33A
ICE = 66A
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp =20µs
5101520
VGE (V)
0
1
2
3
4
5
6
7
8
VCE (V)
ICE = 17A
ICE = 33A
ICE = 66A
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 20µs
5101520
VGE (V)
0
1
2
3
4
5
6
7
8
VCE (V)
ICE = 17A
ICE = 33A
ICE = 66A
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
4567891011
VGE (V)
0
20
40
60
80
100
ICE (A)
TJ = 25°C
TJ = 150°C
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
AUIRGDC0250
5
V 2.6
2019-04-18
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 33A; L = 2.0mH
0 10203040506070
IC (A)
10
15
20
25
30
35
40
45
50
Energy (mJ)
EOFF
020 40 60 80
IC (A)
100
1000
10000
Swiching Time (ns)
tdOFF
tF
020406080100
Rg ()
24
26
28
30
32
Energy (mJ)
EOFF
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 400µH; VCE = 600V, ICE = 33A; VGE = 15V
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 400µH; VCE = 600V, RG = 5; VGE = 15V
020 40 60 80 100
RG ()
100
1000
10000
Swiching Time (ns)
tdOFF
tF
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 400µH; VCE = 600V, ICE = 33A; VGE = 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 400µH; VCE = 600V, RG = 5; VGE = 15V
0100 200 300 400 500 600
VCE (V)
1
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
0 20406080100120140160
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
VCES = 600V
VCES
= 400V
AUIRGDC0250
6
V 2.6
2019-04-18
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci= iRi
Ci= iRi
C
C
4
4
R
4
R
4
Ri (°C/W) I (sec)
0.0015 0.000003
0.0365 0.000118
0.1356 0.001438
0.0554 0.006412
AUIRGDC0250
7
V 2.6
Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
Fig.C.T.3 - Switching Loss Circuit
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.3
0
1K
VCC
DUT
L
Gate Charge Circuit
L
Rg
80 V
DUT VCC
+
-
RBSOA Circuit
L
Rg
VCC
DUT /
DRIVER
diode clamp /
DUT
Switching Loss
-10
0
10
20
30
40
50
60
70
-100
0
100
200
300
400
500
600
700
-20246
I
CE
(A)
V
CE
(V)
time(µs)
90% I
CE
5% V
CE
10% I
CE
Eoff Loss
tf
AUIRGDC0250
8
V 2.6
2019-04-18
Super-TO-220 Package Outline
Dimensions are shown in millimeters (inches)
Super-TO-220 Part Marking Information
AUIRGDC0250
9
V 2.6
2019-04-18
† Highest passing voltage.
Qualification Information
Qualification Level
Automotive
(per AEC-Q101)
Comments: This part number (s) passed Automotive qualification.
Infineon’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
Moisture Sensitivity Level 3L– Super TO-220 MSL1
Machine Model Class M4†(+/- 800V)
AEC-Q101-002
Human Body Model Class H3A†(+/- 6000V)
AEC-Q101-001
Charged Device Model Class C5†(+/- 2000V)
AEC-Q101-005
RoHS Compliant Yes
ESD
Revision History
Date Subjects (major changes since last revision)
9/2/2014 Final Datasheet
12/1/2014 Updated with V(BR)CES and VGE(th) conditions
3/2/2015 Updated with minor changes
8/31/2017 Updated with Infineon logo
03/01/2018 Updated with qualification level
11/06/2018 Updated maximum VCE(on)
Revision
2.0
2.1
2.2
2.3
2.4
2.5
2.6 4/18/2019
Updated typical Vce(on) value @ 150°C
AUIRGDC0250
10
V 2.6
2019-04-18
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2018
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any
information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s products and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
customer’s technical departments to evaluate the suitability of the product for the intended application and the
completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
