Rev. 1.5 SIPMOS Small-Signal-Transistor BSP123 Feature Product Summary * N-Channel VDS * Enhancement mode RDS(on) * Logic Level ID * dv/dt rated 100 V 6 0.37 A PG-SOT223 * Pb-free lead plating; RoHS compliant * Qualified according to AEC Q101 Type Package Tape and Reel Information Marking Packaging BSP123 PG-SOT223 L6433: 4000 pcs/reel BSP123 Non dry BSP123 PG-SOT223 L6327: 1000 pcs/reel BSP123 Non dry Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Continuous drain current Value A ID TA=25C 0.37 TA=70C 0.3 Pulsed drain current Unit ID puls 1.48 dv/dt 6 VGS 20 TA=25C Reverse diode dv/dt kV/s IS=0.37A, VDS =80V, di/dt=200A/s, Tjmax=150C Gate source voltage ESD Class JESD22-A114-HBM V 0 (<250V) Power dissipation Ptot 1.79 W -55... +150 C TA=25C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2010-06-22 Rev. 1.5 BSP123 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - 15 25 @ min. footprint - 100 115 @ 6 cm2 cooling area 1) - 51 70 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) SMD version, device on PCB: RthJA Electrical Characteristics, at Tj = 25 C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)DSS 100 - - VGS(th) 0.8 1.4 1.8 Static Characteristics Drain-source breakdown voltage V VGS=0, ID=250A Gate threshold voltage, VGS = VDS ID=50A Zero gate voltage drain current A IDSS VDS=100V, VGS=0, T j=25C - - 0.01 VDS=100V, VGS=0, T j=150C - - 5 IGSS - - 10 nA RDS(on) - 14 30 RDS(on) - 4.8 10 RDS(on) - 3.5 6 Gate-source leakage current VGS=20V, VDS=0 Drain-source on-state resistance VGS=2.8V, ID=15mA Drain-source on-state resistance VGS=4.5V, ID=0.3A Drain-source on-state resistance VGS=10V, ID=0.37A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (single layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2010-06-22 Rev. 1.5 BSP123 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.13 0.27 - S pF Dynamic Characteristics Transconductance g fs VDS2*ID*RDS(on)max, ID=0.3A Input capacitance C iss VGS=0, VDS=25V, - 56 70 Output capacitance C oss f=1MHz - 9 11.3 Reverse transfer capacitance C rss - 3.5 4.4 Turn-on delay time td(on) VDD=50V, VGS=10V, - 3.3 5 Rise time tr ID=0.37A, RG =6 - 3.2 4.8 Turn-off delay time td(off) - 8.7 13 Fall time tf - 9.4 14 - 0.09 0.13 - 0.8 1.2 - 1.6 2.4 - 3.61 - V - - 0.37 A - - 1.48 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =80V, ID =0.37A VDD =80V, ID =0.37A, nC VGS =0 to 10V Gate plateau voltage V(plateau) VDD =80V, ID = 0.37 A Reverse Diode Inverse diode continuous IS TA=25C forward current Inv. diode direct current, pulsedISM Inverse diode forward voltage VSD VGS=0, IF = IS - 0.9 1.2 V Reverse recovery time trr VR=50V, IF =lS , - 52.7 79 ns Reverse recovery charge Qrr diF/dt=100A/s - 17.8 27 nC Page 3 2010-06-22 Rev. 1.5 BSP123 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: VGS 10 V 1.9 BSP123 0.4 W A 1.6 0.32 1.4 0.28 1.2 ID Ptot BSP123 1 0.24 0.2 0.8 0.16 0.6 0.12 0.4 0.08 0.2 0.04 0 0 20 40 60 80 100 120 C 0 0 160 20 40 60 80 100 C 120 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25 C parameter : D = tp /T 1 BSP123 10 160 TA 10 3 BSP123 K/W A 10 2 10 1 DS (on ) = V DS ID /I D 10 0 Z thJA tp = 21.0ms R 10 0 D = 0.50 0.20 10 -1 10 0.10 -1 0.05 0.02 10 -2 single pulse DC 10 -2 0 10 10 1 0.01 10 2 V 10 3 VDS 10 -3 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 1 s 10 tp Page 4 2010-06-2 3 Rev. 1.5 BSP123 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 C, VGS parameter: Tj = 25 C, VGS A 0.6 0.55 ID 0.5 0.45 0.4 20 10V 5V 4.5V 4.1V 3.9V 3.7V 3.5V 3.1V 2.9V 2.3V 2.3V 2.9V 3.1V 3.5V 3.7V 3.9V 4.1V 4.5V 5.0V 10V 16 RDS(on) 0.7 14 12 10 0.35 0.3 8 0.25 0.2 6 0.15 4 0.1 2 0.05 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 0 0 5 0.1 0.2 0.3 0.4 0.5 A VDS 0.7 ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID = f ( VGS ); VDS 2 x ID x RDS(on)max gfs = f(ID) parameter: Tj = 25 C parameter: Tj = 25 C 0.7 0.4 A S 0.3 ID gfs 0.5 0.25 0.4 0.2 0.3 0.15 0.2 0.1 0.1 0 0 0.05 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGS 0 0 0.1 0.2 0.3 0.4 0.5 A 0.7 ID Page 5 2010-06-22 Rev. 1.5 BSP123 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj ) parameter : ID = 0.37 A, VGS = 10 V 24 parameter: VGS = VDS ; ID =50A BSP123 2.2 V 98% 1.8 18 VGS(th) RDS(on) 20 16 14 1.6 1.4 typ. 1.2 12 1 10 2% 0.8 8 98% 0.6 6 4 0.4 typ 0.2 2 0 -60 -20 20 60 100 C 0 -60 180 -20 20 60 100 Tj C Tj 160 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: VGS =0, f=1 MHz, Tj = 25 C parameter: Tj 10 3 10 1 pF BSP123 A 10 2 10 0 C IF Ciss Coss 10 1 10 -1 Tj = 25 C typ Crss Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 4 8 12 16 20 24 28 V 36 VDS 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2010-06-22 Rev. 1.5 BSP123 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QG); parameter: V DS , ID = 0.37 A pulsed, Tj = 25 C V(BR)DSS = f (Tj ) 16 BSP123 120 BSP123 V V(BR)DSS V VGS 12 10 112 110 108 106 8 0.2 VDS max 104 0.5 VDS max 6 114 102 0.8 VDS max 100 98 4 96 94 2 92 0 0 0.4 0.8 1.2 1.6 2 nC 2.8 QG 90 -60 -20 20 60 100 C 180 Tj Page 7 2010-06-22 Rev. 1.5 BSP123 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2010-06-22