SILICON EPITAXIAL PLANAR TYPE 1$$337 ULTRA HIGH SPEED SWITCHING APPLICATION, Small Package . Low Forward Voltage Fast Reverse Recovery Time : Small Total Capacitance MAXIMUM RATINGS (Ta=25C) > SC-59 : Ve=0.88V(Typ.) trr=6ns(Typ.) : CT=1.6pF(Typ.) Unit in mm 2.9+0.2 0.95 0.95 3 u2 CHARACTERISTIC SYMBOL RATING UNIT an | = $F ao Maximum(Peak) Reverse Voltage VRM 85 Vv il | = Reverse Voltage VR 80 Vv f Maximum(Peak) Forward Current IFM 600* mA 7 Oo Average Forward Current Io 200* mA 2 h 3 1. ANODE Surge Current (10ms) IFSH 6* A 2. ANODE 1d 3. CATHODE Power Dissipation P 150 mW JEDEC - Junction Temperature Tj 150 C EIAJ _ Storage Temperature Tstg -55~150 c TOSHIBA 1-3G1F * Unit Rating. Total Rating=Unit Rating x1.5 Weight 9.0138 ELECTRICAL CHARACTERISTICS (Ta=25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN.| TYP MAX.| UNIT VF(1) IF=10mA - 0.66 - Forward Voltage VF(2) IF=100mA ~ 0.80 - Vv VF(3) Tp=200mA - 0.88 |1.20 TR(1) Vp=30V - - 0.25 Reverse Current HA Ir(2) | VR=80V - ~ {0.50 Total Capacitance Cr Vp=0, f=1MHz - 1.6 - pF Reverse Recovery Time trr Tp=30mA - 6 20 ns Marking A J9g | 8 1184