S1NB80
800V 1A
Copyright & Copy;2002 Shindengen Electric Mfg.Co.Ltd
SHINDENGEN
OUTLINE DIMENSIONS
Unit : mm
RATINGS
Case : 1N
Switching power supply
Home Appliances, Office Equipment
Telecommuication, Factory Automation
APPLICATION
Small Dual In-Line(:DIL) Package
5 mm pitch between terminals
Applicable to Automatic Insertion
FEATURES
General Purpose Rectifiers SMT Bridges
Absolute Maximum Ratings (If not specified Tl=25)
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -40`150
Operating Junction Temperature Tj 150
Maximum Reverse Voltage VRM 800 V
Average Rectified Forward Current IO50Hz sine wave
,
R-load
,
On
g
lass-e
p
ox
y
substrate
,
Ta=251A
Peak Surge Forward Current IFSM 50Hz sine wave
,
Non-re
p
etitive 1 c
y
cle
p
eak value
,
T
j
=2530 A
Current Squared Time I
2
t1mst10ms@T
j
=254.5 A
2
s
Electrical Characteristics (If not specified Tl=25)
Item Symbol Conditions Ratings Unit
Forward Voltage VFIF=0.5A, Pulse measurement, Ratin
g
of
p
er diode Max.1.05 V
Reverse Current IRVR=VRM, Pulse measurement, Rating of per diode Max.10 ÊA
Thermal Resistance Æjl
j
unction to lead Max.15 /W
Æja
j
unction to ambient Max.68
Forward Voltage
00.2 0.4 0.6 0.8 1 1.2 1.4 1.6
0.01
0.1
1
10
S1NBx
Pulse measurement per diode
Tl=150°C [TYP]
Tl=25°C [TYP]
Forward Voltage VF [V]
Forward Current IF [A]
0
0.5
1
1.5
2
2.5
3
0 0.2 0.4 0.6 0.8 1 1.2 1.4
S1NBx Forward Power Dissipation
SIN
Average Rectified Forward Current IO [A]
Forward Power Dissipation PF [W]
Tj = 150°C
Sine wave
0 20 40 60 80 100 120 140 160
0
0.2
0.4
0.6
0.8
1
1.2
1.4
S1NBx Derat ing Curve
SIN
Ambi ent Temper ature Ta [ °C]
Average Recti fi ed Forward Cur r ent IO [A]
Sine wave
R-load
F r ee in air
G las s - epoxy subs tr ate
Soldering land 9mm×9mm
Conductor layer 35µm
Peak Surge Forward Capability
0
10
20
30
40
50
60
1 10 100
S1NBx
2 5 20 50
IFSM
10ms 10ms
1 cycle
Number of Cycles [cycles]
Peak Surge Forward Current IFSM
[A]
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied
