TSOP21..SS1F
Document Number 84615
Rev. 1.1, 31-Jan-05
Vishay Semiconductors
www.vishay.com
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16672
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IR Receiver Modules for Remote Control Systems
Description
The TSOP21..SS1F - series are miniaturized receiv-
ers for infrared remote control systems. PIN diode
and preamplifier are assembled on lead frame, the
epoxy package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
reliable function even in disturbed ambient and the
protection against uncontrolled output pulses.
Features
• Photo detector and preamplifier in one
package
• Internal filter for PCM frequency
• Improved shielding against electrical
field
disturbance
• TTL and CMOS compatibility
• Output active low
• Low power consumption
• High immunity against ambient light
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Special Features
• Enhanced data rate of 4000 bit/s
• Suitable burst length ≥ 6 cycles/burst
• Enhanced suppression of disturbance signals by
special filtering
Parts Table
Part Carrier Frequency
TSOP2130SS1F 30 kHz
TSOP2133SS1F 33 kHz
TSOP2136SS1F 36 kHz
TSOP2137SS1F 36.7 kHz
TSOP2138SS1F 38 kHz
TSOP2140SS1F 40 kHz
TSOP2156SS1F 56 kHz
Block Diagram Application Circuit
25 kΩ
2
3
1
V
S
OUT
Demo-
GND
Pass
AGCInput
PIN
Band dulator
Control Circuit
16834
C1=
4.7 µF
TSOPxxxx
OUT
GND
Circuit
µC
R1=100Ω
+V
S
GND
Transmitter
with
TSALxxxx V
S
R
1
+C
1
recommended to suppress power supply
disturbances.
V
O
The output voltage should not be hold continuously at
a voltage below V
O=
3.3 V by the external circuit.
16842
e3
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Document Number 84615
Rev. 1.1, 31-Jan-05
TSOP21..SS1F
Vishay Semiconductors
Absolute Maximum Ratings
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Electrical and Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Supply Voltage (Pin 2) VS- 0.3 to + 6.0 V
Supply Current (Pin 2) IS5mA
Output Voltage (Pin 1) VO- 0.3 to + 6.0 V
Output Current (Pin 1) IO5mA
Junction Temperature Tj100 °C
Storage Temperature Range Tstg - 25 to + 85 °C
Operating Temperature Range Tamb - 25 to + 85 °C
Power Consumption (Tamb ≤ 85 °C) Ptot 50 mW
Soldering Temperature t ≤ 10 s, 1 mm from case Tsd 260 °C
Parameter Test condition Symbol Min Typ. Max Unit
Supply Current (Pin 2) VS = 5 V, Ev = 0 ISD 0.8 1.1 1.5 mA
VS = 5 V, Ev = 40 klx, sunlight ISH 1.4 mA
Supply Voltage (Pin 2) VS4.5 5.5 V
Transmission Distance Ev = 0, test signal see fig.3,
IR diode TSAL6200,
IF = 250 mA
d35m
Output Voltage Low (Pin 1) IOL = 0.5 mA,Ee = 0.7 mW/m2,
f = fo, test signal see fig. 1
VOL 250 mV
Minimum Irradiance
(30 - 40 kHz)
Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.3
Ee min 0.2 0.4 mW/m2
Minimum Irradiance (56 kHz) Pulse width tolerance:
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.3
Ee min 0.3 0.5 mW/m2
Maximum Irradiance Test signal see fig. 1 Ee max 30 W/m2
Directivity Angle of half transmission
distance
ϕ1/2 ± 45 deg
TSOP21..SS1F
Document Number 84615
Rev. 1.1, 31-Jan-05
Vishay Semiconductors
www.vishay.com
3
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
Figure 1. Output Function
Figure 2. Pulse Length and Sensitivity in Dark Ambient
Figure 3. Output Function
E
e
T
t
pi
*) t
V
O
V
OH
V
OL
t
po2)
t
14337
Optical Test Signal
(IR diode TSAL6200, I
F
=0.4 A, N=6 pulses, f=f
0
, T=10 ms)
Output Signal
t
d1)
1)
3/f
0
< t
d
< 9/f
0
2)
t
pi
– 4/f
0
< t
po
< t
pi
+ 6/f
0
*) t
pi
w6/fo is recommended for optimal function
t – Output Pulse Width ( ms )
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.1 1.0 10.0 100.0 1000.010000.0
E
e
– Irradiance ( mW/m
2
)
16907
po
Input Burst Duration
l= 950 nm,
optical test signal, fig.1
Output Pulse
E
e
t
V
O
V
OH
V
OL
t
600 ms 600 ms
T = 60 ms
T
on
T
off
94 8134
Optical Test Signal
Output Signal, ( see Fig.4 )
Figure 4. Output Pulse Diagram
Figure 5. Frequency Dependence of Responsivity
Figure 6. Sensitivity in Bright Ambient
T ,T – Output Pulse Width ( ms )
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1 1.0 10.0 100.0 1000.010000.0
E
e
– Irradiance ( mW/m
2
)
16910
To ff
l= 950 nm,
optical test signal, fig.3
To n
on off
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.7 0.9 1.1 1.3
f/f
0
– Relative Frequency
16926
f = f
0
"5%
Df ( 3dB ) = f
0
/7
E / E – Rel. Responsivity
e min e
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.01 0.10 1.00 10.00 100.00
E – Ambient DC Irradiance (W/m
2
)
16911
Correlation with ambient light sources:
10W/m
2
^1.4klx (Std.illum.A,T=2855K)
10W/m
2
^8.2klx (Daylight,T=5900K)
Ambient, l = 950 nm
E – Threshold Irradiance ( mW/m )
e min
2
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Document Number 84615
Rev. 1.1, 31-Jan-05
TSOP21..SS1F
Vishay Semiconductors
Figure 7. Sensitivity vs. Supply Voltage Disturbances
Figure 8. Sensitivity vs. Electric Field Disturbances
Figure 9. Max. Envelope Duty Cycle vs. Burstlength
0.0
0.5
1.0
1.5
2.0
0.1 1.0 10.0 100.0 1000.0
DV
sRMS
– AC Voltage on DC Supply Voltage (mV)
16912
f = f
o
f = 10 kHz
E – Threshold Irradiance ( mW/m )
e min 2
f = 1 kHz
f = 100 Hz
E – Threshold Irradiance ( mW/m )
0.0 0.4 0.8 1.2 1.6
0.0
0.4
0.8
1.2
2.0
E – Field Strength of Disturbance ( kV/m )
2.0
94 8147
1.6
e min 2
f(E) = f
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 20 40 60 80 100 120
Burst Length ( number of cycles / burst )
16914
f = 38 kHz, E
e
= 2 mW/m
2
Max. Envelope Duty Cycle
Figure 10. Sensitivity vs. Ambient Temperature
Figure 11. Relative Spectral Sensitivity vs. Wavelength
Figure 12. Directivity
0.0
0.1
0.2
0.3
0.4
0.5
0.6
–30–150 153045607590
T
amb
– Ambient Temperature ( qC )
16918
Sensitivity in dark ambient
E – Threshold Irradiance ( mW/m )
e min
2
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
750 850 950 1050 1150
18998
λ-Wavelength ( nm )
S( ) -Relative Spectral Sensitivityλ
rel
96 12223p2
0.4 0.2 0 0.2 0.4 0.6
0.6
0.9
0q
30q
10q20q
40q
50q
60q
70q
80q
1.0
0.8
0.7
d
rel
– Relative Transmission Distance
TSOP21..SS1F
Document Number 84615
Rev. 1.1, 31-Jan-05
Vishay Semiconductors
www.vishay.com
5
Suitable Data Format
The circuit of the TSOP21..SS1F is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpass filter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions:
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
• Burst length should be 6 cycles/burst or longer.
• After each burst which is between 6 cycles and 70
cycles a gap time of at least 10 cycles is necessary.
• For each burst which is longer than 1.8 ms a corre-
sponding gap time is necessary at some time in the
data stream. This gap time should have at least same
length as the burst.
• Up to 2200 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
Code, Toshiba Micom Format, Sharp Code, RC5
Code, RC6 Code, RCMM Code, R-2000 Code,
RECS-80 Code.
When a disturbance signal is applied to the
TSOP21..F it can still receive the data signal. How-
ever the sensitivity is reduced to that level that no
unexpected pulses will occur.
Some examples for such disturbance signals which
are suppressed by the TSOP21..SS1F are:
• DC light (e.g. from tungsten bulb or sunlight)
• Continuous signal at 38 kHz or at any other fre-
quency
• Signals from fluorescent lamps with electronic bal-
last (an example of the signal modulation is in the fig-
ure below).
Figure 13. IR Signal from Fluorescent Lamp with low Modulation
0 5 10 15 20
Time ( ms )
16920
IR Signal
IR Signal from fluorescent
lamp with low modulation
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Document Number 84615
Rev. 1.1, 31-Jan-05
TSOP21..SS1F
Vishay Semiconductors
Package Dimensions in mm
13655
TSOP21..SS1F
Document Number 84615
Rev. 1.1, 31-Jan-05
Vishay Semiconductors
www.vishay.com
7
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their impact on the environment.
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known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
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Legal Disclaimer Notice
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Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
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