AO4803A 30V Dual P-Channel MOSFET General Description Product Summary The AO4803A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V -5A RDS(ON) (at VGS=-10V) < 46m RDS(ON) (at VGS = -4.5V) < 74m VDS 100% UIS Tested 100% Rg Tested SOIC-8 Top View D Bottom View D Top View S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS TA=25C Units V 20 V -5 ID TA=70C Maximum -30 -4 A Pulsed Drain Current C IDM -30 Avalanche Current C IAS, IAR 17 A Avalanche energy L=0.1mH C TA=25C EAS, EAR 14 mJ Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 2: Nov 2011 2 PD TA=70C TJ, TSTG Symbol t 10s Steady-State Steady-State W 1.3 RJA RJL www.aosmd.com -55 to 150 Typ 48 74 35 C Max 62.5 110 40 Units C/W C/W C/W Page 1 of 6 AO4803A Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250A, VGS=0V -30 -1 TJ=55C -5 Gate-Body leakage current VDS=0V, VGS= 20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250A -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 nA -2.5 V 32 46 48 68 VGS=-4.5V, ID=-4A 51 74 13 TJ=125C gFS Forward Transconductance VDS=-5V, ID=-5A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current Crss Reverse Transfer Capacitance Gate resistance A -0.7 DYNAMIC PARAMETERS Ciss Input Capacitance Rg A 100 Static Drain-Source On-Resistance Output Capacitance Units -2 VGS=-10V, ID=-5A Coss Max V VDS=-30V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=-15V, f=1MHz S V -2.5 A 520 pF 100 pF pF 7.5 11.5 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 9.2 11 nC Qg(4.5V) Total Gate Charge 4.6 6 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=-10V, VDS=-15V, ID=-5A 3.5 m -1 65 VGS=0V, VDS=0V, f=1MHz m 1.6 nC 2.2 nC 7.5 ns VGS=-10V, VDS=-15V, RL=3, RGEN=3 5.5 ns 19 ns 7 ns IF=-5A, dI/dt=100A/s 11 Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/s 5.3 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initialTJ=25C. D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 2: Nov 2011 www.aosmd.com Page 2 of 6 AO4803A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 40 -10V -8V VDS=-5V -6V 35 25 30 -5V 20 -ID(A) -ID (A) 25 VGS=-4.5V 20 15 15 10 -4V 10 125C 5 5 0 0 0 1 2 3 4 0.5 5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 80 Normalized On-Resistance 1.8 70 VGS=-4.5V 60 RDS(ON) (m ) 25C VGS=-3.5V 50 40 30 VGS=-10V 20 10 VGS=-10V ID=-5A 1.6 1.4 17 5 VGS=-4.5V ID=-4A2 10 1.2 1 0.8 0 2 4 6 8 10 0 25 50 75 100 125 150 175 0 Temperature (C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 120 1.0E+02 ID=-5A 1.0E+01 100 40 80 -IS (A) RDS(ON) (m ) 1.0E+00 125C 60 125C 1.0E-01 25C 1.0E-02 1.0E-03 40 1.0E-04 25C 1.0E-05 20 2 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 2: Nov 2011 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AO4803A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS Z JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=110C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 2: Nov 2011 www.aosmd.com Page 4 of 6 AO4803A TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 VDS=-15V ID=-5A 700 8 Ciss Capacitance (pF) -VGS (Volts) 600 6 4 500 400 300 Coss 200 2 100 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0 100.0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 100.0 TA=25C TA=100C 10s TA=150C 10.0 TA=125C 10.0 -ID (Amps) -IAR (A) Peak Avalanche Current Crss 0 RDS(ON) limited 100s 1.0 1ms 10ms 0.1 DC TJ(Max)=150C TA=25C 10s 0.0 1.0 0.01 1 10 100 1000 Time in avalanche, tA ( s) Figure 9: Single Pulse Avalanche capability (Note C) 0.1 1 -VDS (Volts) 10 100 Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 10000 TA=25C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F) Rev 2: Nov 2011 www.aosmd.com Page 5 of 6 AO4803A Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 2: Nov 2011 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 6 of 6