SiRA24DP www.vishay.com Vishay Siliconix N-Channel 25 V (D-S) MOSFET FEATURES PowerPAK(R) SO-8 Single D 5 D 6 D 7 * TrenchFET(R) Gen IV power MOSFET D 8 * Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss * 100 % Rg and UIS tested 6. 15 m m 1 5 5.1 mm Top View 3 4 S G Bottom View 2 S * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 S APPLICATIONS * Synchronous rectification * High power density DC/DC PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) Configuration D * Synchronous buck converter 25 0.00140 0.00240 17.2 60 a, g Single G * Load switching S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8 Single SiRA24DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 C) SYMBOL VDS VGS TC = 25 C TC = 70 C TA = 25 C TA = 70 C Pulsed drain current (t = 100 s) ID IDM Continuous source-drain diode current TC = 25 C TA = 25 C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 C TC = 70 C Maximum power dissipation TA = 25 C TA = 70 C Operating junction and storage temperature range Soldering recommendations (peak temperature) c PD TJ, Tstg LIMIT 25 +20 / -16 60 a 60 a 44.5 b, c 35.6 b, c 150 56.8 4.5 b, c 30 45 62.5 40 5 b, c 3.2 b, c -55 to +150 260 UNIT V A mJ W C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b t 10 s RthJA 20 25 C/W 1.7 2 Maximum junction-to-case (drain) Steady state RthJC Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 70 C/W. g. TC = 25 C. S16-2084-Rev. A, 10-Oct-16 Document Number: 75453 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiRA24DP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 A 25 - - VDS/TJ ID = 10 mA - 21 - VGS(th) temperature coefficient VGS(th)/TJ ID = 250 A - -4.8 - Gate-source threshold voltage VDS temperature coefficient mV/C VGS(th) VDS = VGS , ID = 250 A 1 - 2.1 V Gate-source leakage IGSS VDS = 0 V, VGS = +20 / -16 V - - 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 25 V, VGS = 0 V - - 1 VDS = 25 V, VGS = 0 V, TJ = 70 C - - 15 VDS 10 V, VGS = 10 V 40 - - A VGS = 10 V, ID = 15 A - 0.00115 0.00140 VGS = 4.5 V, ID = 10 A - 0.00195 0.00240 VDS = 15 V, ID = 15 A - 75 - - 2650 - - 1015 - - 197 - - 36.5 55 A S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 15 A - 17.2 26 VDS = 10 V, VGS = 4.5 V, ID = 15 A - 7.4 - - 3.3 - f = 1 MHz 0.2 0.75 1.35 - 12 24 - 23 46 - 18 36 tf - 10 20 td(on) - 18 36 - 42 84 - 17 34 - 17 34 td(on) tr td(off) tr td(off) VDD = 10 V, RL = 1 , ID 15 A, VGEN = 10 V, Rg = 1 VDD = 10 V, RL = 1 , ID 15 A, VGEN = 4.5 V, Rg = 1 tf pF nC ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD TC = 25 C IS = 5 A, VGS = 0 V - - 56.8 - - 150 - 0.73 1.1 A V Body diode reverse recovery time trr - 32 64 ns Body diode reverse recovery charge Qrr - 20 40 nC Reverse recovery fall time ta - 17 - Reverse recovery rise time tb - 15 - IF = 10 A, dI/dt = 100 A/s, TJ = 25 C ns Notes a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-2084-Rev. A, 10-Oct-16 Document Number: 75453 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiRA24DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Axis Title Axis Title 150 150 10000 10000 VGS = 10 V thru 4 V 60 100 VGS = 3 V 30 1000 90 1st line 2nd line 1000 90 2nd line ID - Drain Current (A) 120 1st line 2nd line 2nd line ID - Drain Current (A) 120 TC = 25 C 60 100 TC = 125 C 30 TC = -55 C VGS = 2 V 0 0 10 0 0.5 1 1.5 2 2.5 10 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 5 Axis Title Axis Title 0.0030 3200 10000 10000 2560 1000 0.0018 0.0012 100 VGS = 10 V 0.0006 1000 1920 Coss 1280 100 640 0 40 60 80 10 0 100 5 10 20 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.7 ID = 10 A 8 1000 1st line 2nd line 6 4 100 VDS = 5 V, 10 V, 15 V 2 0 10 8 16 24 32 40 2nd line RDS(on) - On-Resistance (Normalized) 10000 0 25 Axis Title Axis Title 10 2nd line VGS - Gate-to-Source Voltage (V) 15 10000 ID = 15 A 1.5 VGS = 10 V VGS = 4.5 V 1.1 100 0.9 0.7 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S16-2084-Rev. A, 10-Oct-16 1000 1.3 1st line 2nd line 20 Crss 0 10 0 1st line 2nd line VGS = 4.5 V 2nd line C - Capacitance (pF) 0.0024 1st line 2nd line 2nd line RDS(on) - On-Resistance () Ciss Document Number: 75453 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiRA24DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Axis Title Axis Title 100 0.2 10 2nd line VGS(th) - Variance (V) 1000 1 TJ = 25 C 0.1 100 1000 0 ID = 5 mA 1st line 2nd line TJ = 150 C 1st line 2nd line 2nd line IS - Source Current (A) 10000 0.4 10000 -0.2 -0.4 0.01 100 ID = 250 A -0.6 0.001 -0.8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 10 -50 -25 0 25 50 75 100 125 150 VSD - Source-to-Drain Voltage (V) 2nd line TJ - Temperature (C) 2nd line Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 0.010 200 10000 10000 160 1000 2nd line Power (W) 1000 0.004 TJ = 125 C 120 1st line 2nd line 0.006 1st line 2nd line 2nd line RDS(on) - On-Resistance () ID = 15 A 0.008 80 100 100 0.002 40 TJ = 25 C 0 0 0.001 10 0 2 4 6 8 10 10 0.01 0.1 1 10 VGS - Gate-to-Source Voltage (V) 2nd line Time (s) 2nd line On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 1000 10000 IDM limited ID limited 1 ms 10 Limited by RDS(on) (1) 1000 1st line 2nd line 2nd line ID - Drain Current (A) 100 10 ms 1 100 ms 100 1s 10 s 0.1 TC = 25 C Single pulse 0.01 0.01 (1) BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S16-2084-Rev. A, 10-Oct-16 Document Number: 75453 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiRA24DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Axis Title 175 10000 1000 105 1st line 2nd line 2nd line ID - Drain Current (A) 140 Package limited 70 100 35 0 10 0 35 70 105 140 175 TC - Case Temperature (C) 2nd line Current Derating a Axis Title Axis Title 75 10000 2.5 60 10000 2.0 1.5 1st line 2nd line 30 2nd line Power (W) 1000 1st line 2nd line 2nd line Power (W) 1000 45 1.0 100 15 100 0.5 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (C) 2nd line TA - Ambient Temperature (C) 2nd line Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S16-2084-Rev. A, 10-Oct-16 Document Number: 75453 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiRA24DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Axis Title 10000 Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 t1 0.05 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 70 C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 100 (t) 4. Surface mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 1 0.2 0.1 0.05 1000 0.02 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Single pulse 100 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75453. S16-2084-Rev. A, 10-Oct-16 Document Number: 75453 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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