154 EE-SY169 Photomicrosensor (Reflective)
Photomicrosensor (Reflective)
EE-SY169
■Dimensions
Note: All units are in millimeters unless otherwise indicated.
■Features
•High-quality model with plastic lenses.
•Highly precise sensing range with a tolerance of ±0.6 mm horizon-
tally and vertically.
•With a red LED sensing dyestuff-type inks.
•Limited reflective model.
•For lesser LED forward current the EE-SY169B would be a better
choice.
■Absolute Maximum Ratings (Ta = 25°C)
Note: 1. Refer to the temperature rating chart if the ambient temper-
ature exceeds 25°C.
2. The pulse width is 10 μs maximum with a frequency of
100 Hz.
3. Complete soldering within 10 seconds.
■Electrical and Optical Characteristics (Ta = 25°C)
Note: The letter “d” indicates the distance between the top surface of the sensor and the sensing object.
Internal Circuit
Terminal No. Name
A Anode
K Cathode
C Collector
E Emitter
Dimensions Tolerance
3 mm max. ±0.3
3 < mm ≤ 6 ±0.375
6 < mm ≤ 10 ±0.45
10 < mm ≤ 18 ±0.55
18 < mm ≤ 30 ±0.65
A
K
C
E
Two, C0.2
1±0.1 dia.
1±0.1 dia.
(see note)
(see note)
Surface A
Unless otherwise specified, the
tolerances are as shown below.
Note: These dimensions are for
the surface A. Other lead
wire pitch dimensions are for
the housing surface.
Item Symbol Rated value
Emitter Forward current IF40 mA
(see note 1)
Pulse forward cur-
rent
IFP 300 mA
(see note 2)
Reverse voltage VR3 V
Detector Collector–Emitter
voltage
VCEO 30 V
Emitter–Collector
voltage
VECO ---
Collector current IC20 mA
Collector dissipa-
tion
PC100 mW
(see note 1)
Ambient tem-
perature
Operating Topr 0°C to 70°C
Storage Tstg –20°C to 80°C
Soldering temperature Tsol 260°C
(see note 3)
Item Symbol Value Condition
Emitter Forward voltage VF1.85 V typ., 2.3 V max. IF = 20 mA
Reverse current IR0.01 μA typ., 10 μA max. VR = 3 V
Peak emission wavelength λP660 nm typ. IF = 20 mA
Detector Light current IL160 μA min., 2,000 μA max. IF = 20 mA, VCE = 5 V
White paper with a reflection ratio of 90%,
d = 4 mm (see note)
Dark current ID2 nA typ., 200 nA max. VCE = 5 V, 0 lx
Leakage current ILEAK 2 μA max. IF = 20 mA, VCE = 5 V with no reflection
Collector–Emitter saturated
voltage
VCE (sat) --- ---
Peak spectral sensitivity wave-
length
λP850 nm typ. VCE = 5 V
Rising time tr 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Falling time tf 30 μs typ. VCC = 5 V, RL = 1 kΩ, IL = 1 mA
Be sure to read Precautions on page 25.
EE-SY169 Photomicrosensor (Reflective) 155
■Engineering Data
Forward Current vs. Collector
Dissipation Temperature Rating
Light Current vs. Forward Current
Characteristics (Typical)
Light Current vs. Collector−Emitter
Voltage Characteristics (Typical)
Relative Light Current vs.
Ambient Temperature
Characteristics (Typical)
Dark Current vs. Ambient
Temperature Characteristics
(Typical)
Response Time vs. Load
Resistance Characteristics
(Typical)
Sensing Distance Characteristics
(Typical)
Response Time Measurement
Circuit
Load resistance RL (kΩ)
Distance d2 (mm)
Sensing Angle Characteristics
(Typical)
Angle deviation θ (°)
Input
Output
Input
Output
90 %
10 %
V
CE
= 10 V
0lx
Vcc = 5 V
Distance d (mm)
Sensing Position Characteristics
(Typical)
Dark Current ID (nA)
d = 4 mm
Sensing object: White
paper with a reflection
factor of 90%
IF = 40 mA
IF = 30 mA
IF = 20 mA
IF = 10 mA
IF = 5 mA
d = 4 mm
Sensing object:
White paper with a
reflection factor of
90%
Ta = 25°C
Sen-
sor
Direction
Sensing object: White
paper with a reflection
factor of 90%
d = 0
I
F
= 20 mA
V
CE
= 5 V
Ta = 25
°
C
d
1
= 4 mm
Sensing
object
Sensing object:
White paper with
a reflection factor
of 90%
d1 = 3.5 mm
d1 = 4.0 mm
d1 = 4.5 mm
Direction
Sen-
sor
Distance d2 (mm)
Sensing Position Characteristics
(Typical)
d = 3 mm
d = 4 mm
d = 5 mm
Sensing object: White paper
with a reflection factor of 90%
d = 3 mm
d = 4 mm
d = 5 mm
Ta = 25°
I
F
= 20 mA V
CE
= 10 V
Sensing object:
White paper with
a reflection fac
tor of 90%
Sensing Angle Characteristics
(Typical)
Angle deviation θ (°)
V
CE
= 5 V
Ta = 25°C
I
F
= 20 mA
V
CE
= 10 V
Ambient temperature Ta (°C)
Collector dissipation Pc (mW)
Forward current IF (mA)
Forward current IF (mA)
Light current IL (μA)
Collector−Emitter voltage VCE (V)
Light current IL (μA)
Ambient temperature Ta (°C)
I
F
= 20 mA
V
CE
= 5 V
Relative light current IL (%)
Ambient temperature Ta (°C)
Relative light current IL (%)
Response time tr, tf (μs)
Relative light current IL (%)
Ta = 25°C
I
F
= 20 mA
V
CE
= 10 V
Relative light current IL (%)
Light current IL (μA)
Ta = 25°C
I
F
= 20 mA
V
CE
= 5 V
Relative light current IL (%)
Ta = 25°C
