Infrared Emitting Diode, RoHS Compliant, 950 nm, GaAs
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81054
276 Rev. 1.6, 05-Sep-08
TSUS4400
Vishay Semiconductors
DESCRIPTION
TSUS4400 is an infrared, 950 nm emitting diode in GaAs
technology molded in a blue tinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): ∅ 3
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 18°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Infrared remote control and free air transmission systems
with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
Note
Tamb = 25 °C, unless otherwise specified
94 8636
PRODUCT SUMMARY
COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns)
TSUS4400 15 ± 18 950 800
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
TSUS4400 Bulk MOQ: 5000 pcs, 5000 pcs/bulk T-1
ABSOLUTE MAXIMUM RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR5V
Forward current IF100 mA
Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA
Surge forward current tp = 100 µs IFSM 2A
Power dissipation PV170 mW
Junction temperature Tj100 °C
Operating temperature range Tamb - 40 to + 85 °C
Storage temperature range Tstg - 40 to + 100 °C
Soldering temperature t ≤ 5 s, 2 mm from case Tsd 260 °C
Thermal resistance junction/ambient J-STD-051, leads 7 mm,
soldered on PCB RthJA 300 K/W
Document Number: 81054 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 1.6, 05-Sep-08 277
TSUS4400
Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs Vishay Semiconductors
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature
Note
Tamb = 25 °C, unless otherwise specified
0
20
40
60
80
100
120
140
160
180
01020304050607080 90 100
21315
T
amb
- Ambient Temperature (°C)
PV - Power Dissipation (mW)
R
thJA
= 300 K/W
0
20
40
60
80
100
120
0 10203040 50607080 90 100
T
amb
- Ambient Temperature (°C)
21316
I
F
- Forward Current (mA)
R
thJA
= 300 K/W
BASIC CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 100 mA, tp = 20 ms VF1.3 1.7 V
IF = 1.5 A, tp = 100 µs VF2.2 V
Temperature coefficient of VFIF = 100 mA TKVF - 1.3 mV/K
Reverse current VR = 5 V IR100 µA
Breakdown voltage IR = 100 µA V(BR) 540 µA
Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj30 pF
Radiant intensity IF = 100 mA, tp = 20 ms Ie71535mW/sr
IF = 1.5 A, tp = 100 µs Ie140 mW/sr
Radiant power IF = 100 mA, tp = 20 ms φe20 mW
Temperature coefficient of φeIF = 20 mA TKφe- 0.8 %/K
Angle of half intensity ϕ± 18 deg
Peak wavelength IF = 100 mA λp950 nm
Spectral bandwidth IF = 100 mA Δλ 50 nm
Temperature coefficient of λpIF = 100 mA TKλp0.2 nm/K
Rise time IF = 100 mA tr800 ns
IF = 1.5 A tr400 ns
Fall time IF = 100 mA tf800 ns
IF = 1.5 A tf400 ns
Virtual source diameter d 2.1 mm
www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81054
278 Rev. 1.6, 05-Sep-08
TSUS4400
Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 5 - Relative Forward Voltage vs. Ambient Temperature
Fig. 6 - Radiant Intensity vs. Forward Current
Fig. 7 - Radiant Power vs. Forward Current
Fig. 8 - Relative Radiant Intensity/Power vs. Ambient Temperature
tp- Pulse Duration (ms)
94 7947
10 0
10 1
101
10-1
10 -1 10 010 2
10 -2
tp/T = 0.01, I FM =2A
0.05
0.1
0.5
0.02
0.2
I - Forward Current (A)
F
94 7996
10 1
10 0
10 2
10 3
10 4
10-1
I- Forward Current (mA)
F
43210
V
F- Forward Voltage (V)
0.7
0.8
0.9
1.0
1.1
1.2
VF rel - Relative Forward Voltage (V)
94 7990 Tamb - Ambient Temperature (°C)
100806040200
IF = 10 mA
IF
- Forward Current (mA)
94 7982
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
I - Radiant Intensity (mW/sr)
e
- Radiant Power (mW)
e
I
F
- Forward Current (mA)
94 7980
10
3
10
1
10
2
10
4
10
0
0.1
1
10
1000
100
Φ
- 10 10 50 0 100
0
0.4
0.8
1.2
1
.
6
I
e rel
;
140
94 7993
I
F
= 20 mA
Φ
e rel
T
amb
- Ambient Temperature (°C)
Document Number: 81054 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com
Rev. 1.6, 05-Sep-08 279
TSUS4400
Infrared Emitting Diode, RoHS Compliant,
950 nm, GaAs Vishay Semiconductors
Fig. 9 - Relative Radiant Power vs. Wavelength Fig. 10 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
900 950
0
0.25
0.5
0.75
1.0
1.25
- Wavelength (nm)
1000
94 7994
Φe rel - Relative Radiant Power
IF = 100 mA
λ
0.4 0.2 0 0.2 0.4
I - Relative Radiant Intensity
e rel
0.6
94 7983
0.6
0.9
0.8
0°
30°
10°20°
40°
50°
60°
70°
80°
0.7
1.0
3.2 ± 0.15
2.9 ± 0.1
0.4 + 0.15
- 0.05
< 0.6
3.5 ± 0.1
4.5 ± 0.3
6.1± 0.3
30.6 ± 0.5
1.5 ± 0.25
0.6 ± 0.15
2.54 nom.
Drawing-No.: 6.544-5255.02-4
Issue: 3; 23.04.98
specifications
according to DIN
technical drawings
AC
Area not plane
(2.8)
R 1.4 (sphere)
95 10914
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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