NPN SILICON PLANAR
RF TRANSISTOR
ISSUE 2  MARCH 94
FEATURES
* High fT, 1.3GHz
* Low noise < 5dB at 500MHz
* Power output at 500MHz >175mW
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 15 V
Emitter-Base Voltage VEBO 2.5 V
Mean Collector Current (Averaged over 100µs) IAV 25 mA
Collector Current ICM 50 mA
Power Dissipation at Tamb
=25°C Ptot 350 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Sustaining Voltage
VCEO(SUS) 15 V IC
=10mA, IB
=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 5V
IE=10µA, IC
=0
Collector Cut-Off Current ICBO 10 nA VCB
=15V, IE=0
Emitter Cut-Off Current ICES 10 µAVCE
=15V, VBE
=0
Static Forward Current
Transfer Ratio
hFE 25
20
150
125
IC
=2mA, VCE=1V*
IC
=25mA, VCE=1V*
Transition Frequency fT1.0
1.3
GHz
GHz
IC
=2mA, VCE=5V, f=400MHz
IC
=25mA, VCE=5V, f=400MHz
Capacitance, Collector
Depletion Layer
CTC 1.5 pF VCB
=10V, IE=Ie=0, f=1MHz
Capacitance, Emitter
Depletion Layer
CTE 2.0 pF VEB=0.5V, IC=Ic=0, f=1MHz
Feedback Capacitance -Cre 0.85 pF VCE
=5V, IC
=2mA, f=1MHz
Feedback Time Constant rbbCbc2.0 12 ps VCB
=5V, -IE=2mA, f=10.7MHz
ZTX325
3-161
C
B
E
E-Line
TO92 Compatible
3-162
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Noise Figure N 5.0 dB f=500MHz, VCE=5V, IC
=2mA,
RS
=50Ω
Intermodulation
Distortion
dim -53 dB IC
=14mA, VCE=6V, f=217MHz
V0=100mV, RL=37.5Ω,
f1=183MHz, f2=200MHz
Output Power
(at Tcase
=25°C)*
PO175 mW VCE
=13.5V, IC
=22.5mA
Pin=25mW, f=500MHz
*It is essential that care be taken to reduce steady state current when no h.f. signal is applied.
ZTX325
TYPICAL CHARACTERISTICS
fTv IC
IC - Collector Current (mA)
f
T
- (GHz)
1µ10µ10m
100µ1m
IC - Collector Current (A)
hFE v IC
h
FE
- Normalised Gain
20
40
60
80
1000.1
f=400MHz
1000
1
2
3
VCE - (V)
CRE v VCE
C
RE
- (pF)
0
10 20 30
0.5
1.0
1.5
2.0
VCE=10V
0110
VCE=10V
VCE=5V
100m
f=1MHz
NPN SILICON PLANAR
RF TRANSISTOR
ISSUE 2  MARCH 94
FEATURES
* High fT, 1.3GHz
* Low noise < 5dB at 500MHz
* Power output at 500MHz >175mW
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 15 V
Emitter-Base Voltage VEBO 2.5 V
Mean Collector Current (Averaged over 100µs) IAV 25 mA
Collector Current ICM 50 mA
Power Dissipation at Tamb
=25°C Ptot 350 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +200 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Sustaining Voltage
VCEO(SUS) 15 V IC
=10mA, IB
=0
Emitter-Base
Breakdown Voltage
V(BR)EBO 5V
IE=10µA, IC
=0
Collector Cut-Off Current ICBO 10 nA VCB
=15V, IE=0
Emitter Cut-Off Current ICES 10 µAVCE
=15V, VBE
=0
Static Forward Current
Transfer Ratio
hFE 25
20
150
125
IC
=2mA, VCE=1V*
IC
=25mA, VCE=1V*
Transition Frequency fT1.0
1.3
GHz
GHz
IC
=2mA, VCE=5V, f=400MHz
IC
=25mA, VCE=5V, f=400MHz
Capacitance, Collector
Depletion Layer
CTC 1.5 pF VCB
=10V, IE=Ie=0, f=1MHz
Capacitance, Emitter
Depletion Layer
CTE 2.0 pF VEB=0.5V, IC=Ic=0, f=1MHz
Feedback Capacitance -Cre 0.85 pF VCE
=5V, IC
=2mA, f=1MHz
Feedback Time Constant rbbCbc2.0 12 ps VCB
=5V, -IE=2mA, f=10.7MHz
ZTX325
3-161
C
B
E
E-Line
TO92 Compatible
3-162
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Noise Figure N 5.0 dB f=500MHz, VCE=5V, IC
=2mA,
RS
=50Ω
Intermodulation
Distortion
dim -53 dB IC
=14mA, VCE=6V, f=217MHz
V0=100mV, RL=37.5Ω,
f1=183MHz, f2=200MHz
Output Power
(at Tcase
=25°C)*
PO175 mW VCE
=13.5V, IC
=22.5mA
Pin=25mW, f=500MHz
*It is essential that care be taken to reduce steady state current when no h.f. signal is applied.
ZTX325
TYPICAL CHARACTERISTICS
fTv IC
IC - Collector Current (mA)
f
T
- (GHz)
1µ10µ10m
100µ1m
IC - Collector Current (A)
hFE v IC
h
FE
- Normalised Gain
20
40
60
80
1000.1
f=400MHz
1000
1
2
3
VCE - (V)
CRE v VCE
C
RE
- (pF)
0
10 20 30
0.5
1.0
1.5
2.0
VCE=10V
0110
VCE=10V
VCE=5V
100m
f=1MHz