Three Phase PSD 82 IdAV = 88 A
Rectifier Bridge VRRM = 800-1800V
Features
•Package with screw terminals
•Isolation voltage 3000 V∼
•Planar glass passivated chips
•Blocking voltage up to 1800 V
•Low forward voltage drop
•UL registered E 148688
Applications
•Supplies for DC power equipment
•Input rectifier for PWM inverter
•Battery DC power supplies
•Field supply for DC motors
Advantages
•Easy to mount with two screws
•Space and weight savings
•Improved temperature and power
cycling capability
Package style and outline
Dimensions in mm (1mm = 0.0394“)
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
VRSM VRRM Type
VDSM VDRM
(V) (V)
800 800 PSD 82/08
1200 1200 PSD 82/12
1400 1400 PSD 82/14
1600 1600 PSD 82/16
1800 1800 PSD 82/18
Preliminary Data Sheet
Symbol Test Conditions Maximum Ratings
IdAVM TC = 110 °C, (per module) 88 A
IFSM TVJ = 45 °C t = 10 ms (50 Hz), sine 750 A
VR = 0 t = 8.3 ms (60 Hz), sine 820 A
TVJ = TVJM t = 10 ms (50 Hz), sine 670 A
VR = 0 t = 8.3 ms (60 Hz), sine 740 A
∫∫
∫∫
∫ i2 dt TVJ = 45 °C t = 10 ms (50 Hz), sine 2800 A²s
VR = 0 t = 8.3 ms (60 Hz), sine 2800 A²s
TVJ = TVJM t = 10 ms (50 Hz), sine 2250 A²s
VR = 0 t = 8.3 ms (60 Hz), sine 2250 A²s
TVJ -40... + 150 °C
TVJM 150 °C
Tstg -40... + 125 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V∼
IISOL ≤ 1 mA t = 1 s 3000 V∼
MdMounting torque (M5) 5 Nm
Terminal connection torque (M5) 5 Nm
Weight typ. 160 g
IRVR = VRRM, TVJ = 25°C ≤ 0.3 mA
VR = VRRM, TVJ = TVJM ≤ 5 mA
VFIF = 150 A, TVJ = 25 °C ≤ 1.6 V
VTO For power-loss calculations only 0.8 V
rT 5 mΩ
RthJC per diode; DC current 1.1 K/W
per module 0.183 K/W
RthJK per diode; DC current 1.52 K/W
per module 0.253 K/W
dsCreeping distance on surface 10.0 mm
dACreeping distance in air 9.4 mm
aMax. allowable acceleration 50 m/s²
Data according to IEC 60747 refer to a single diode unless otherwise stated
Symbol Test Conditions Characteristic Value
http://store.iiic.cc/
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
2002 POWERSEM reserves the right to change limits, test conditions and dimensions
Fig.5 Maximum forward current at
case temperature
Fig. 4 Power dissipation versus direct output
current and ambient temperature
Fig. 3 ∫i2dt versus time (1-10ms)
per diode (or thyristor)
Fig. 2 Surge overload current per
diode IFSM: Crest value. t: duration
Fig. 1 Forward current versus
voltage drop per diode
Fig. 6 Transient thermal impedance per diode (or thyristor), calculated
T = 150°C
vj
T = 25°C
vj
20.5 1.5
1
V [V]
F
0
I
F
50
100
200
150
[A]
0.01 0.1 110
0.5
1
1.5
2
K/W
Zth
t[s]
ZthJK
ZthJC
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