Three Phase Rectifier Bridge PSD 82 IdAV VRRM = 88 A = 800-1800V Preliminary Data Sheet VRSM VDSM (V) 800 1200 1400 1600 1800 VRRM VDRM (V) 800 1200 1400 1600 1800 Type PSD PSD PSD PSD PSD 82/08 82/12 82/14 82/16 82/18 Symbol Test Conditions IdAVM IFSM TC = 110 C, i dt 2 TVJ TVJM Tstg VISOL Maximum Ratings (per module) 88 A TVJ = 45 C t = 10 ms (50 Hz), sine 750 A VR = 0 t = 8.3 ms (60 Hz), sine 820 A TVJ = TVJM t = 10 ms (50 Hz), sine 670 A VR = 0 t = 8.3 ms (60 Hz), sine 740 A TVJ = 45 C t = 10 ms (50 Hz), sine 2800 As VR = 0 t = 8.3 ms (60 Hz), sine 2800 As TVJ = TVJM t = 10 ms (50 Hz), sine 2250 As VR = 0 t = 8.3 ms (60 Hz), sine 2250 As -40... + 150 150 C C -40... + 125 C V 50/60 Hz, RMS t = 1 min 2500 IISOL 1 mA 3000 V t=1s Md Mounting torque (M5) 5 Nm Weight Terminal connection torque (M5) typ. 5 160 Nm g Symbol Test Conditions IR VR = VRRM, TVJ = 25C 0.3 mA VR = VRRM, TVJ = TVJM 5 mA IF = 150 A, 1.6 V VF VTO rT RthJC RthJK ds dA a TVJ = 25 C Characteristic Value For power-loss calculations only 0.8 V 5 m per diode; DC current per module per diode; DC current 1.1 0.183 1.52 K/W K/W K/W per module 0.253 K/W 10.0 9.4 50 mm mm m/s Creeping distance on surface Creeping distance in air Max. allowable acceleration Features * * * * * * Package with screw terminals Isolation voltage 3000 V Planar glass passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E 148688 Applications * * * * Supplies for DC power equipment Input rectifier for PWM inverter Battery DC power supplies Field supply for DC motors Advantages * * * Easy to mount with two screws Space and weight savings Improved temperature and power cycling capability Package style and outline Dimensions in mm (1mm = 0.0394") Data according to IEC 60747 refer to a single diode unless otherwise stated 2002 POWERSEM reserves the right to change limits, test conditions and dimensions POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/ 200 [A] 150 100 50 IF 0 Tvj = 150C 0.5 Tvj = 25C 1 1.5 VF [V] Fig. 1 Forward current versus voltage drop per diode 2 Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 3 i2dt versus time (1-10ms) per diode (or thyristor) Fig.5 Maximum forward current at case temperature 2 K/W 1.5 Z thJK Z thJC 1 0.5 Zth 0.01 0.1 t[s] 1 10 Fig. 6 Transient thermal impedance per diode (or thyristor), calculated POWERSEM GmbH, Walpersdorfer Str. 53 2002 POWERSEM reserves the right to change limits, test conditions and dimensions D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 http://store.iiic.cc/