HUTSON INDUSTRIES b4 HUTSON INDUSTRIES ~~ |PRESS FIT SERIES| ~ SCRs 8 AMPERE CENTER GATE 10 AMPERE CENTER GATE 20 AMPERE CENTER GATE 25 AMPERE CENTER GATE 35 AMPERE CENTER GATE : ry + . + yo fs Lhe died tlinelete! Gat) Yaietan Bitter tatth anne syonkae vw eres Drees bey Hutson's SCRs feature proprietary, void-free glass passivated chips and are hermetically sealed to eliminate punch through and burn through which are associated with organic passivation materials. SCRs are available in current ratings to 40 am- peres and voltage (VDRM) ratings to 800 volts. These economical! and highly reliable SCR's are the result of Hutsons advanced engineering and manufacturing technology, state-of-the-art glass passivation materials and techniques and experi- ence in switching devices application. aa = 7 65 . STRAIGHT ANURL 065 Los 075 STRAIGHT KNURL 050 305-4 075 S/N 0s0 265 50 GRVS/IN DIA. 265 2" PRESS FIT (1) TO-203 Yo" PRESS FIT (1) TO-203 (MOD) 050 DIA. ALL DIMENSIONS IN INCHES PARTIAL THREADS = 0909 MAX UNITS SHALL NOT BE DAMAGED 8Y 30 INCH POUNDS TORQUE APPLIED 10 CLASS 28 NUT ASSEMBLED ON THREADS 3 MAX PITCH DIA OF PLATED THREADS SHALL BE (0 2268) (REF ASA STD NR B11-1960) OIA PARTIAL THREADS = 0.909 MAX UNITS SHALL NOT BE DAMAGED 8Y 30 INCH POUNDS TORQUE APPLIED 10 CLASS 28 NUT ASSEMBLED ON THREADS MAX PITCH DIA. OF PLATED THREADS SHALL BE (02268) (REF ASA STD NR 811 1960) Ro %" STUD MOUNT (2) MOD. TO-48 %2 STUD MOUNT (2) MOD. TO-48 ~ at IMHO ALED. WARNING ~ isolated siud products should be handied with tare The ceramic a wised in thase thysisiors contains BERYLLIUM OXIDE as a major ingredient . DO NOT crush, grind, or sbrada thesa portions cf the thyristors because the dust Tesulung from such -achon may be HAZARDOUS INTERNAL CONNECTIONS: 2. CAFHODE ANODE * CONNECTED TO CASEY 530 sie 610% ALL DIMENSIONS IN INCHES Ya" ISOLATED STUD MOUNT 135 [- | pcre) O25 4 670 7 525 - 130 oT ant 453 Par 4 to 145 ' INTERNAL CONNECTIONS: 135 -L . GAT oA | 1 2. CATHODE | - 3. ANODE : t (CONNECTED TO GASE) B- 539 mn 619 7-4 ALL DIMENSIONS IN INCHES va" ISOLATED STUD MOUNT tes Oe wee ateicteh teen ak HUTSON INDUSTRIES P.O, BOX MARCH 1977 PFSS -60008-ly 34235 # 2019 W. VALLEY VIEW LANE DALLAS, TEXAS 75234 (244) 241-3511 TWX 910-860-5537HUTSON INDUSTRIES 64 pe ff yey47a0 gcoo0e00 4 a SO - Vorm : ON SYMBOL AND DEVICE NUMBERS . Varm Repetitive Peak Off-State Voltage and 50 308 ati0 Repetitive Peak Reverse Voltage at Vv 100 $18 ; T; =100C DRM 200 $28 $210 AND 300 838 $310 ! * Note: Varm 400 S48 $410 g 800 Volts Available in Some Series 300 oe8 Se10 i= : * < RMS On-State Current at T. = 75C lies) 8 10 2 2 Peak Surge (Non-Repetitive) On-State | = Current, One Cycle at 50 Hz or 60 Hz TSM 80 100 ; < } => . . Bente Ma Trigger Current for lorm 20 20 Peak Gate-Power Dissipation at lor < Ioru for 3 wsec. Max. Pom 20 20 Average Gate-Power Dissipation Poway) 0.5 0.5 Storage Temperature Range | Tstc 40 to +150 Operating Temperature Range Toper ~40 to +100 Peak-Off State Current at T, = 100C, | lan? 4) Gate Open and Vppm and Vara = Max. Rating pew and Une 2.0 Max. 2.0 Max. = Maximum On-State Voltage (Peak) Vom 2.5 Max. 2,0 Max. 5 Te = 25C ne Peak on State Current 16 20 Oo _ . - DC Holding Current at T, = 25C - 2 2 (Gate Open) lho 50 Max. 50 Max. my O im 3 DC Gate-Trigger Current for Anode 2 =|} Voltage =12 VDC; R,=30 2 and ler 25 Max. 25 Max. x % at Tp = 25C a 5 an DC Gate-Trigger Voltage for Anode _1 24] Voltage=12VDC; R. =300 and Ver . 2.0 Max. 2.0 Max. ss atT. = 25C , OG 2 Gate Controlled Turn-On Time yp.) 2.5 (Typ) 1O p -f. tk 2.5 (Typ. 5 (Typ. wy ler = 150 mA Tor Li 2 Critical Rate-of-Rise of Off-State Criti BS Voltage (Gate Open) and T, = 100C sae 100 (Typ.) 100 (Typ.) oS 2 Thermal Resistance, Junction Pressfit 2.5 (Typ.) 2.5 (Typ.) < to Case Roeic Stud 3.0 (Typ.) 3.0 (Typ.) Isolated Stud} 3.2 (Typ.) 3.2 (Typ.) WN -INSTALLATION INSTRUCTIONS 1Z" PRESS FIT SCR's Recommended Heat Sink material: Copper (recommended for maximum heat transfer and minimum corro- sion problem), aluminum or steel. Heat sink should be 14 thick minimum. The hole diameter into which the SCR is pressed must be 0.4975 + .001 inch. A slight chamfer on the hole should be used. This hole may be punched and reamed in a flat plate or extruded and sized in sheet metal. The entire knurled section of the SCR should be in contact with the heat sink to insure maximum heat trans- fer. The SCR must not be inserted into a heat sink deeper than the knurt height. The SCR insertion force must not exceed 800 pounds. If the insertion force approaches that value either the SCR is misaligned with the hole or the SCR-to-hole interference is excessive. The insertion force must be uniformly applied to the top. face (terminal end) of the SCR within an annular ring which has an inside diame- Os oo less than 0.370 inch and notlarger than 0.390 inch; the outside diameter must not be fess than . inch. The thermal resistance between the SCR case and a copper heat sink _should not exceed 0.5 C/W if the _ SCR is inserted in the manner described above. - PESS O000 F 2X4644700 HUTSON INDUSTRIES DEVICE NUMBERS UNITS $020 $025 $035 $120 $125 $135 $220 $225 $235 $320 $325 $335 VOLTS $420 $425 $435 $520 $525 $535 S620 $625 $635 20 25 35 AMP 200 250 350 AMP 20 20 20 AMP 20 20 20 WATT 0.5 0.5 0.5 WATT 40 to +150 C 40 to +100 C 2.0 Max. 2.0 Max. 2.0 Max. mA 1.9 Max. 1.5 Max. 1.6 Max VOLTS 40 50 70 AMPS 50 Max. 50 Max. 50 Max. mA 25 Max. 25 Max. 25 Max. mA 2.0 Max. 2.0 Max. 2.0 Max. VOLTS 2.5 (Typ.) 2.5 (Typ.) 2.5 (Typ.) usec 100 (Typ.) 100 (Typ.) 100 (Typ.) V/usec Clwart PRINCIPAL VOLTAGE-CURRENT HARACTERISTICS OF A SILICON CONTROLLED RECTIFIER CURR REVERSE SLOCKNG STATE QUADRANT tt {ANODE RENT QUADRANT | CANOGE +} a Ou STATE HOLGING CURRENT BREAROVER VOLTAGE oF state VOUTACE DE 4ub44700 oooozo1 o ff o SCR's . Non Repetitive Peak Reverse Voltage (Open Gate) Vasos The maxi- mum instantanous value of any non-repetitive transient reverse voltage which occurs across an SCR whose gate is open. Repetitive Peak Reverse Voltage (Open Gate) Vanox The maximum instantaneous value of the reverse voltage which may be applied across an SCR, including all repetitive transient voltages, but excluding all non- tepetitive transient voltages, when the gate is open. Repetitive Peak Off-State Voltage (Open Gate) Vprow The maximum instantaneous value of the off-state voltage which may be applied across an SCR (when the gate is open), including all repetitive transient volt- ages, but excluding all non-repetitive transient voltages. Average On-State Current lrcav) The principal current, OC value with alternating component, when an SCR is in the on-state. RMS On-State Current lrinsisi The principal current, total RMS value, when an SCR is in the on-state. Surge (Non-Repetitive) On-State Current Irss; An on-state current of short-time duration and specified waveshape. Rate of Change of On-State Current dir/dt The maximum value of the rate-of-rise of on-state current which an SCR can withstand without deleterious effect. Peak On-State or Off-State Gate Power Dissipation Pi: The peak instantaneous power dissipated between gate and cathode, of a reverse blocking thyristor. Average On-State or Off-State Gate Power Dissipation P.;.4., The average power dissipated between gate and cathode of a reverse block- ing thyristor. Instantaneous Forward Breakover Voltage (Open Gate) Ve.no.s The instantaneous principal voltage at the breakover point with the gate open. Peak Off-State Current (Open Gate) Inox The maximum principal current when an SCR is in the off-state. Repetitive Peak Reverse Current (Open Gate) Jina The peak in- stantanous reverse current when the SCR is in the reverse blocking state. Instantaneous On-State Voltage vr - The instantaneous principal volt- age when the SCR is in the on-state. Average Trigger Current {2c The minimum gate current, DC value, required to switch an SCR from the off-state to the on-state. Average Trigger Voltage Vav The minimum gate-to-cathode voltage, DC value, required to produce the gate trigger current. Instantaneous Holding Current ij, The instantaneous minimum prin- cipal current required to maintain the SCR in the on-state. Instantaneous On-State Current l: The instantaneous value of the principal current for a positive anode-to-cathode voltage. Critical Rate of Applied Forward Voltage Critical dv/dt The minimum value of the rate of applied forward valtage which will cause the thyristor to switch from the off-state to the on-state. Gate Controlled Turn-On Time t,.. The time interval between a spec- ified point at the beginning of the gate pulse and the instant when the Principal voltage has dropped to a specified low value (or current has fisen to a specified high value) during switching of an SCR from off-state to the on-state by a gate pulse. HUTSON INDUSTRIES BOX 34235 @ 2019 W. VALLEY VIEW LANE DALLAS, TEXAS 75284 (214) 241-3511 TWX 910-860-5537 - PFS'S - 0000 &-3%HUTSON INDUSTRIES bY DEG} 4e44700 coooece 2 ff TYPICAL CONDUCTION CHARACTERISTICS TYPICAL CONDUCTION CHARACTERISTICS 8 AND 10 AMP SCR 0 20 AND 25 AMP SCR 20 100 &0 PEAK CONDUCTION CURRENT-AMPERES PEAK CONDUCTION CURRENT-AMPERES Te=25C 1 2 PEAK CONDUCTION VOLTAGE-VOLTS PEAK CONDUCTION VOLTAGE-VOLTS TYPICAL CONDUCTION CHARACTERISTICS MAXIMUM ie Ore, GAGE TEMPERATURE 35 AMP SCR 10 nos} = || 1, Case Temperature measured on side of case below Knur!-} . NOON A 80 IN DS WOOT NS 4 -~ ~ > = aS 50 on ~ 40 8 Amp 10 Amp 20 Amp 25 Amp 35 Amp 30 MAXIMUM ALLOWABLE CASE TEMPERATURE (T,) C PEAK CONDUCTION CURRENT-AMPERES 20 5S Te =25C 5 10 15 20 2 30 35 1 2 PEAK CONDUCTION VOLTAGE-VOLT: 8 RMS ON-STATE CURRENT [1 + cpyjg) ] AMPERES PEAK NON-REPETITIVE SURGE CURRENT GATE-TRIGGER CHARACTERISTICS AND VS DURATION IN FULL CYCLES LIMITING CONDITIONS OF GATE-TRIGGER PULSES 10K roy TTT T Td NOTES: 1. Device may lose gate control during and immediately after 8K surge control will be regained 7 when junction temperature drops below 100 C. 2. Resistive load &X 3. 60 Hz Sine Wave =e 4. 75 C Case Temperature POSITIVE OR NEGATIVE DC GATE-TRIGGER VOLTS (Va) N aX - NS MAL Upper mo of permissible x ini average ate power x Refers to multiplication Upper roe at power dissipation ford Amp & by dissipation for 6 Triacs | 10 Amp Triaes 1 10 100 1000 POSITIVE OR NEGATIVE DC. GATE-TRIGGER AMPERES (1.1) a PFSS -0e00g- yy