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FPAB2 0BH60B PFC SPM® 3 Series for Single-Phase Boost PFC
December 2013
©2010 Fairchild Semiconductor Corporation 1www.fairchildsemi.com
FPAB20BH60B Rev. C4
Package Marking & Ordering Information
Device Device Marking Package Packing Type Quantity
FPAB20BH60B FPAB20BH60B SPMIC-027 Rail 10
FPAB20BH60B
PFC SPM® 3 Series for Single-Phase Boost PFC
Features
• UL Certified No. E209204 (UL1557)
• 600 V - 20 A Single-Phase Boost PFC with Integral
Gate Driver and Protection
• Very Low Thermal Resistance Using Al2O3 DBC
Substrate
• Full-Wave Bridge Rectifier and High-Performance
Output Diode
• Built-in NTC Thermistor for Temperature Mo nitoring
• Optimized for 20kHz Switching Frequency
• Isolation Rating: 2500 Vrms/min.
Applications
• Single-Phase Boost PFC Converter
Related Source
•AN-9090 - PFC SPM 3 Series User’s Guide
•AN-9091 - Boost PFC Inductor Design Guide
General Description
The FPAB20BH60B is an advanced PFC SPM® 3
module providing a fully-featured, high-performance
Boost PFC (Power Factor Correction) input power stage
for consumer, medical, and industrial applications.
These modules integrate optimized gate drive of
the built-in IGBT to minimize EMI and losses, while also
providing multiple on-module protection features
including under-voltage lockout, over-current shutdown,
thermal monitoring, and fault reporting. These modules
also feature a full-wave rectifier, and high-performance
output diode for additional space savings and mounting
convenience.
Figure 1. Package Overview
FPAB2 0BH60B PFC SPM® 3 Series for Single-Phase Boost PFC
©2010 Fairch ild Semiconductor Corporation 2 www.fairchildsemi.com
FPAB20BH60B Rev. C4
Integrated Power Functions
• PFC converter for single-phase AC / DC power conversion (please refer to Figure 3)
Integrated Drive, Protection, and System Control Functions
• For IGBTs: gate drive circuit, Over-Current Protection (OCP), control supply circuit Under-Voltage Lock-Out (UVLO) Protection
• Fault signal: corresponding to OC and UV fault
• Built-in thermistor: temperature monitoring
• Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input
Pin Configuration
Figure 2. Top View
Notes :
1. For the measurement point of case temperature(TC), please refer to Figure 2.
12.205
18.345
(1)VCC
(2)COM
(3)COM
(4)COM
(5)IN
(6)VFO
(7)CFOD
(8)CSC
(9)RTH
(10)VTH
(11)N.C
(12)N.C
(13)N
(14)N
(15)N
(16)N
(17)NR
(18)NR
(19)NR
(20)NR
(21)P
(22)P
(23)N.C
(24)L
(25)PR
(26)R
(27)S
DBC Substrate
Case Temperature (TC)
Detecting Point
Top View
12.205
18.345
(1)VCC
(2)COM
(3)COM
(4)COM
(5)IN
(6)VFO
(7)CFOD
(8)CSC
(9)RTH
(10)VTH
(11)N.C
(12)N.C
(13)N
(14)N
(15)N
(16)N
(17)NR
(18)NR
(19)NR
(20)NR
(21)P
(22)P
(23)N.C
(24)L
(25)PR
(26)R
(27)S
DBC Substrate
Case Temperature (TC)
Detecting Point
Top View
FPAB2 0BH60B PFC SPM® 3 Series for Single-Phase Boost PFC
©2010 Fairch ild Semiconductor Corporation 3 www.fairchildsemi.com
FPAB20BH60B Rev. C4
Pin Descriptions
* 11th and 12th pins are cut. Please refe r to package outline dr awings for more detail.
Internal Equivalent Circuit and Input/Output Pins
Figure 3. Internal Block Diagram
Pin Number Pin Name Pin Description
1V
CC Common Bias Voltage for IC and IGBT Driving
2,3,4 COM Common Supply Ground
5 IN Signal Input for IGBT
6V
FO Fault Output
7C
FOD Capacitor for Fault Output Duration Selection
8C
SC Capacitor (Low-Pass Filter) for Over-Current Detection
9R
(TH) Series Resistor for The Use of Thermistor
10 V(TH) Thermistor Bias Voltage
11,12 N.C No Connection*
13~16 N IGBT Emitter
17~20 NRNegative DC-Link of Rectifier
21,22 P Positive Rail of DC-Link
23 N.C No Connection
24 L Reactor Connection Pin
25 PRPositive DC-Link of Rectifier
26 R AC Input for R-Phase
27 S AC Input for S-Phase
CSC
CFOD
VFO
IN
COM
VCC
OUT
(21,22) P
(24 ) L
(25 ) P R
NTC
Thermistor
(26 ) R
(27) S
(5 ) IN
(2~ 4 ) COM
(1 ) VC C
(6 ) VFO
(7 ) CF O D
(8 ) CS C
(10) VTH
(9 ) RT H
(13 ~ 1 6 ) N
(17~20) N R
FPAB2 0BH60B PFC SPM® 3 Series for Single-Phase Boost PFC
©2010 Fairch ild Semiconductor Corporation 4 www.fairchildsemi.com
FPAB20BH60B Rev. C4
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)
Converter Part
Control Part
Total System
Thermal Resistance
Symbol Item Condition Rating Unit
ViSupply Voltage Applied between R - S 264 Vrms
Vi(Surge) Supply Voltage (Surge) Applied between R - S 500 V
VPN Output Voltage Applied between P - N 450 V
VPN(Surge) Output Voltage (Surge) Applied between P - N 500 V
VCES Collector - Emitter Voltage 600 V
ICEach IGBT Collector Current TC = 25°C, TJ < 150°C 20 A
ICP Each IGBT Collector Current (Peak) TC = 25°C, TJ < 150°C, Under 1ms Pulse Width 40 A
PCCollector Dissipation TC = 25°C 89 W
VRRM Repititive Peak Reverse Voltage 600 V
IFSM Peak Forward Surge Current Single Half Sine-Wave 250 A
TJOperating Junction Temperature -40 ~ 150 °C
Symbol Item Condition Rating Unit
VCC Control Supply Voltage Applied between VCC - COM 20 V
VIN Input Signal Voltage Applied between IN - COM -0.3 ~ VCC+0.3 V
VFO Fault Output Supply Voltage Applied between VFO - COM -0.3 ~ VCC+0.3 V
IFO Fault Output Current Sink Current at VFO Pin 5 mA
VSC Current Sensing Input Voltage Applied between CSC - COM -0.3 ~ VCC+0.3 V
Symbol Item Condition Rating Unit
TSTG Storage Temperature -40 ~ 125 °C
VISO Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connect Pins
to Heat Sink Plate 2500 Vrms
Symbol Item Condition Min. Typ. Max. Unit
R(j-c)Q Junction to Case Thermal Resistance IGBT - - 1.4 °C/W
R(j-c)F FRD - - 1.4 °C/W
R(j-c)R Rectifier (per 1 / 4 module) - - 2.1 °C/W
FPAB2 0BH60B PFC SPM® 3 Series for Single-Phase Boost PFC
©2010 Fairch ild Semiconductor Corporation 5 www.fairchildsemi.com
FPAB20BH60B Rev. C4
Electrical Characteristics (TJ = 25°C, unless otherwise specified.)
Converter Part
Notes:
2. tON and tOFF include the propagation delay of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For
the detailed information, please see Figure 4.
Figure 4. Switching Time Definition
Symbol Item Condition Min. Typ. Max. Unit
VCE(SAT) IGBT Saturation Voltage VCC = 15 V, VIN = 5 V, IC = 20 A - 2.3 3.0 V
VFF FRD Forward Voltage IF = 20 A - 1.8 2.5 V
VFR Rectifier Forward Voltage IF = 20 A - 1.2 1.5 V
tON Switching Times VPN = 400 V, VCC = 15V, IC = 20 A
VIN = 0 V 5 V, Inductive Load
(Note 2)
-450-ns
tC(ON) -200-ns
tOFF -350-ns
tC(OFF) -80-ns
trr -70-ns
Irr -6-A
ICES Collector - Emitter
Leakage Current VCE = VCES --250A
tON tC(ON)
trr
Irr
10% of IC
100% of IC
90% of IC
120% of IC
15% of VCE
(a) Turn-on
tOFF
tC(OFF)
(b) Turn-off
IC
VCE
VCE
IC
VIN VIN
15% of VCE
10% of IC
FPAB2 0BH60B PFC SPM® 3 Series for Single-Phase Boost PFC
©2010 Fairch ild Semiconductor Corporation 6 www.fairchildsemi.com
FPAB20BH60B Rev. C4
Control Part
Notes:
3. The fault-out pulse width tFOD depends on the capacitance va lue of CFOD according to the following approximate equation: CFOD = 18.3 x 10-6 x tFOD [F] .
4. TTH is the temperature of know case temperatur e(TC), please make the experiment considering your application.
Figure 5. R-T Curve of the Built-In Thermistor
Symbol Item Condition Min. Typ. Max. Unit
IQCCL Quiescent VCC Supply Current VCC = 15 V, IN = 0 V VCC - COM - - 26 mA
VFOH Fault Output Voltage VSC = 0 V, VFO Circuit: 4.7 k to 5 V Pull-up 4.5 - - V
VFOL VSC = 1 V, VFO Circuit: 4.7 k to 5 V Pull-up - - 0.8 V
VSC(ref) Over-Current Trip Level VCC = 15 V 0.45 0.5 0.55 V
UVCCD Supply Circuit Under- Voltage
Protection Detection Level 10.7 11.9 13.0 V
UVCCR Reset Level 11.2 12.4 13.2 V
tFOD Fault-Out Pulse Width CFOD = 33 nF (Note 3) 1.4 1.8 2.0 ms
VIN(ON) ON Threshold Voltage Applied between IN - COM 2.8 - - V
VIN(OFF) OFF Threshold Voltage - - 0.8 V
RTH Resistance of Thermistor @ TTH = 25°C (Note 4, Figure 5) - 47.0 - k
@ TTH = 100°C (Note 4, Figure 5) - 2.9 - k
0 25 50 75 100 125
0
50
100
150
200 MIN
TYP
MAX
R-T Curve
Resistance RTH[k]
Temperature TTH[]℃
95 100 105 110 115 120 125
1
2
3
4 MIN
TYP
MAX
Resistance RTH[k]
Temp er atu re T TH[]℃
FPAB2 0BH60B PFC SPM® 3 Series for Single-Phase Boost PFC
©2010 Fairch ild Semiconductor Corporation 7 www.fairchildsemi.com
FPAB20BH60B Rev. C4
Recommended Operating Condition
Mechanical Characteristics and Ratings
Figure 6. Flatness Measurement Position
Symbol Item Condition Min. Typ. Max. Unit
ViInput Supply Voltage Applied between R - S 187 220 253 Vrms
VPN Output Voltage Applied between P - N - 380 400 V
VCC Control Supply Voltage Applied between VCC(L) - COM 13.5 15.0 16.5 V
dVCC/dt Control Supply Variation -1 - 1 V/s
fPWM PWM Input Frequency TJ 150°C - 20 - kHz
IiAllowable Input Current TC < 90°C, Vi = 220 V, VPN = 380 V
VPWM = 20 kHz --20A
peak
Item Condition Min. Typ. Max. Unit
Mounting Torque Mounting Screw: M3 Recommended 0.62 N•m 0.51 0.62 0.72 N•m
Device Flatness See Figure 6 0 - +120 m
Weight -15.00- g
(+)
(+)
(+)
FPAB2 0BH60B PFC SPM® 3 Series for Single-Phase Boost PFC
©2010 Fairch ild Semiconductor Corporation 8 www.fairchildsemi.com
FPAB20BH60B Rev. C4
Time Charts of Protective Function
P1 : Normal operation: IGBT ON and conducting current
P2 : Under-voltage detection
P3 : IGBT gate interrupt
P4 : Fault signal generation
P5 : Under-voltage reset
P6 : Normal operation: IGBT ON and conducting current
Figure 7. Under-Voltage Protection
P1 : Normal operation: IGBT ON and conducting current
P2 : Over current detection
P3 : IGBT gate interrupt / fault signal generation
P4 : IGBT is slowly turned off
P5 : IGBT OFF signal
P6 : IGBT ON signa: but IGBT cannot be turned on during the fault output activation
P7 : IGBT OFF state
P8 : Fault output reset and normal operation start
Figure 8. Over-Current Protection
In te rn a l IGBT
Ga te -E mitte r V o lta g e
Input Signal
O utput C urrent
Sensing V oltage
Fault O utput S ignal
P1
P2
P3
P4
P6
P5
P7
P8
OC Re fe re n ce
Voltage (0.5V)
RC F ilter D ela y
OC Detection
FPAB2 0BH60B PFC SPM® 3 Series for Single-Phase Boost PFC
©2010 Fairch ild Semiconductor Corporation 9 www.fairchildsemi.com
FPAB20BH60B Rev. C4
Fig. 9. Application Example
Notes:
5. Each capacitors should be located as close to PFC SPM® product pins as possible.
6. It’s recommended that anti-parallel diode should be connected with IGBT.
CSC
CFOD
VFO
IN
COM
VCC
OUT
P
L
PR
NTC
Thermistor
PFC
Controller
+5 V
+15 V
+5 V
R
SVAC
NNR
IN
COM
VCC
VFO
CFOD
CSC
VTH
RTH
FPAB2 0BH60B PFC SPM® 3 Series for Single-Phase Boost PFC
©2010 Fairch ild Semiconductor Corporation 10 www.fairchildsemi.com
FPAB20BH60B Rev. C4
Detailed Package Outline Drawings
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or data on the drawing and contact a FairchildSemiconductor representative to verify o r
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide therm and conditions,
specifically the the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MO/MOD27BE.pdf
©2010 Fairchild Semiconductor Corporation 11 www.fairchildsemi.com
FPAB20BH60B Rev. C4
FPAB20BH60B PFC SPM® 3 Series for Single-Phase Boost PFC
www.onsemi.com
1
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ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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