AP9997GM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Fast Switching Characteristic D2 D2 D1 Single Drive Requirement Surface Mount Package D1 BVDSS 95V RDS(ON) 110m ID 3A G2 SO-8 S1 S2 G1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. D2 D1 G2 G1 The SO-8 package is widely preferred for commercial -industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S1 S2 Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25 ID@TA=100 Rating Units 95 V 20 V 3 3 A 3 2.3 A Continuous Drain Current , VGS @ 10V Continuous Drain Current , VGS @ 10V 1 IDM Pulsed Drain Current 20 A PD@TA=25 Total Power Dissipation 2 W TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 62.5 /W 1 200803063 AP9997GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Test Conditions Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Min. Typ. Max. Units VGS=0V, ID=1mA 95 - - V VGS=10V, ID=3A - - 110 m VGS=4.5V, ID=2A - - 165 m VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=3A - 3 - S IDSS Drain-Source Leakage Current VDS=80V, VGS=0V - - 25 uA o Drain-Source Leakage Current (Tj=70 C) VDS=80V ,VGS=0V - - 100 uA Gate-Source Leakage VGS= 20V - - 100 nA ID=3A - 14 22 nC IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=80V - 1.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 5.5 - nC VDS=50V - 4.5 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 7 - ns td(off) Turn-off Delay Time RG=3.3,VGS=10V - 18 - ns tf Fall Time RD=50 - 6 - ns Ciss Input Capacitance VGS=0V - 450 720 pF Coss Output Capacitance VDS=25V - 65 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 50 - pF Min. Typ. IS=1.5A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=3A, VGS=0V, - 39 - ns Qrr Reverse Recovery Charge dI/dt=100A/s - 62 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on min. copper pad. THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION. THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT DEVICE OR SYSTEM ARE NOT AUTHORIZED. 2 AP9997GM 20 20 o T A =25 C 12 8 V G =3.0V 4 4.5V 12 8 V G =3.0V 4 0 0 0 1 2 3 4 5 6 0 2 V DS , Drain-to-Source Voltage (V) 4 6 8 10 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 150 2.4 I D =2A I D =3A T A =25 o C V G =10V Normalized RDS(ON) 2.0 130 RDSON (m) 10V 7.0V 5.0V 16 ID , Drain Current (A) 16 ID , Drain Current (A) o T A =150 C 10V 7.0V 5.0V 4.5V 110 1.6 1.2 90 0.8 0.4 70 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.8 10 1.6 8 T j =25 o C 1.4 VGS(th) (V) T j =150 o C IS (A) 6 1.2 4 1 2 0.8 0.6 0 0.1 0.3 0.5 0.7 0.9 1.1 1.3 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.5 -50 0 50 100 150 o T j ,Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9997GM 12 f=1.0MHz 1000 I D =3A VGS , Gate to Source Voltage (V) 10 Ciss 8 C (pF) V DS =80V 6 100 Coss Crss 4 2 10 0 0 4 8 12 16 1 20 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (Rthja) 100 10 100us 1ms ID (A) 1 10ms 100ms 1s 0.1 DC 0.01 T A =25 o C Single Pulse DUTY=0.5 0.2 0.1 PDM 0.1 t T 0.05 Duty factor = t/T Peak Tj = P DM x Rthja + Ta 0.02 Rthja = 135/W 0.01 Single Pulse 0.001 0.01 0.1 1 10 100 1000 0.001 0.01 0.1 V DS , Drain-to-Source Voltage (V) 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 5 V DS =5V o VG o T j =25 C T j =150 C ID , Drain Current (A) 4 QG 10V 3 QGS QGD 2 1 Charge Q 0 0 1 2 3 4 5 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D 8 7 Millimeters 6 5 E1 1 2 3 E 4 e SYMBOLS MIN NOM MAX A 1.35 1.55 1.75 A1 0.10 0.18 0.25 B 0.33 0.41 0.51 C 0.19 0.22 0.25 D 4.80 4.90 5.00 E1 3.80 3.90 4.00 E 5.80 6.15 6.50 L 0.38 0.71 1.27 0 4.00 8.00 1.27 TYP e B A A1 DETAIL A L 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. c DETAIL A Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement 9997GM YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5