FW231A Ordering number : ENA0515 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET FW231A General-Purpose Switching Device Applications Features * * 2.5V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 20 Gate-to-Source Voltage VGSS 10 V 8 A Drain Current (DC) ID Drain Current (PW10s) V Duty cycle1% 9 A Duty cycle1% 52 A Allowable Power Dissipation ID IDP PD Mounted on a ceramic board (1500mm20.8mm) 1unit, PW10s 2.3 W Total Dissipation PT Mounted on a ceramic board (1500mm20.8mm) 1unit, PW10s 2.5 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Drain Current (PW10s) Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Symbol Ratings min typ Unit max ID=1mA, VGS=0V VDS=20V, VGS=0V VGS=8V, VDS=0V 20 IDSS IGSS VDS=10V, ID=1mA VDS=10V, ID=8A 0.5 Forward Transfer Admittance VGS(off) yfs RDS(on)1 RDS(on)2 ID=8A, VGS=4.5V ID=8A, VGS=4V 10 17 23 m Static Drain-to-Source On-State Resistance 11 18 24 m RDS(on)3 Ciss ID=4A, VGS=2.5V VDS=10V, f=1MHz VDS=10V, f=1MHz 12 20 33 m Input Capacitance Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS Conditions Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time Marking :W231A td(off) tf 9 V 1 A 10 A 1.3 15 V S 1530 pF 230 pF VDS=10V, f=1MHz See specified Test Circuit. 215 pF 19 ns See specified Test Circuit. 225 ns See specified Test Circuit. 125 ns See specified Test Circuit. 125 ns Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O0406PA MS IM TC-00000221 No. A0515-1/4 FW231A Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=8A 21 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4.5V, ID=8A 3.4 nC Gate-to-Drain "Miller" Charge Qgd VDS=10V, VGS=4.5V, ID=8A 4.8 Diode Forward Voltage VSD IS=8A, VGS=0V 0.8 Package Dimensions nC 1.2 V Electrical Connection unit : mm (typ) 7005-003 7 6 5 1 2 3 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 5 1 6.0 4.4 0.3 8 8 0.2 1.5 1.8 MAX 0.43 Top view 0.1 5.0 1.27 0.595 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 4 SANYO : SOP8 Switching Time Test Circuit VDD=10V VIN 4.5V 0V ID=5A RL=2 VIN D VOUT PW=10s D.C.1% G FW231A 50 ID -- VDS 2.0 V 7 VGS=1.5V 2.5 2.0 1.5 6 5 4 3 2 1.0 0 25 1 0.5 C --25 C 4.5V 3.5 3.0 VDS=10V C 4.0 Drain Current, ID -- A 4.0V 4.5 ID -- VGS 8 2.5V 3.0V 5.0 Drain Current, ID -- A S Ta=7 5 P.G 0 0 0.05 0.1 0.15 0.2 0.25 0.3 Drain-to-Source Voltage, VDS -- V 0.35 0.4 IT05892 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Gate-to-Source Voltage, VGS -- V 1.6 1.8 IT05893 No. A0515-2/4 FW231A RDS(on) -- VGS Ta=25C 40 35 30 8A 25 ID=4A 15 10 5 6 10 8 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, yfs -- S C C 5 3 -2 =- 2 Ta 75 C 1.0 7 5 3 .0V S=4 10 5 --50 --25 0 25 50 75 100 125 150 175 IT11499 IS -- VSD VGS=0V 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 2 3 5 7 0.1 2 5 7 1.0 3 2 3 Drain Current, ID -- A 0.01 0.4 5 7 10 IT05896 5 0.6 0.7 0.8 0.9 1.0 IT05897 Ciss, Coss, Crss -- VDS 7 VDD=10V VGS=4.5V 7 0.5 Diode Forward Voltage, VSD -- V SW Time -- ID 1000 f=1MHz 5 3 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns =2.5V VGS , VG I D=8A 15 10 7 5 25 5 A, I D=4 20 Ambient Temperature, Ta -- C VDS=10V 0.1 0.01 3 td(off) 2 tf 100 7 5 tr 3 td(on) 2 10 0.1 3 5 7 2 1.0 3 5 1000 7 5 3 7 Coss Crss 0 100 7 5 3 2 Drain Current, ID -- A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10 15 Total Gate Charge, Qg -- nC 4 20 25 IT11500 6 8 10 12 14 16 18 Drain-to-Source Voltage, VDS -- V VGS -- Qg 5 2 IT05898 VDS=10V ID=8A 0 Ciss 100 2 4.5 4.0 2 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 12 10 7 25 IT11498 yfs -- ID 2 30 C 4 35 Ta =7 5 2 40 0 --75 0 0 45 25 C --2 5C 45 20 RDS(on) -- Ta 50 Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m 50 10 7 5 3 2 ASO 10s IDP=52A 1m s ID=8A 10 ms 0m s 10 DC 10 op s era 1.0 7 5 3 2 0.1 7 5 3 2 20 IT05899 Operation in this area is limited by RDS(on). tio n( Ta = 25 C ) Ta=25C Single pulse Mounted on a ceramic board (1500mm20.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT11501 No. A0515-3/4 PD -- Ta Allowable Power Dissipation, PD -- W 3.0 Mounted on a ceramic board (1500mm2 0.8mm), PW10s 2.5 2.3 2.0 To t al Di ss 1.5 1u nit ip ati on 1.0 0.5 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT11502 Allowable Power Dissipation (FET1), PD -- W FW231A PD (FET1) -- PD (FET2) 2.5 2.3 2.0 1.5 1.0 0.5 Mounted on a ceramic board (1500mm2 0.8mm), PW10s 0 0 0.5 1.0 1.5 2.0 Allowable Power Dissipation (FET2), PD -- W 2.3 2.5 IT11503 Note on usage : Since the FW231A is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of October, 2006. Specifications and information herein are subject to change without notice. PS No. A0515-4/4