MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM VDRM V 1300 1500 1700 1900 V 1200 1400 1600 1800 ITRMS = 2x 450 A 2x 250 A ITAVM = VRRM = 1200-1800 V 3 Type 7 6 2 MCC 255-12io1 MCC 255-14io1 MCC 255-16io1 MCC 255-18io1 MCD 255-12io1 MCD 255-14io1 MCD 255-16io1 MCD 255-18io1 5 4 1 E72873 Symbol Conditions Maximum Ratings ITRMS, IFRMS TVJ = TVJM ITAVM, IFAVM TC = 85C; 180 sine ITSM, IFSM I2t (di/dt)cr 450 250 A A TVJ = 45C; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 9000 9600 A A TVJ = TVJM; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 7800 8600 A A TVJ = 45C; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 405 000 382 000 A2s A2s TVJ = TVJM; VR = 0 t = 10 ms t = 8.3 ms (50 Hz) (60 Hz) 304 000 307 000 A2s A2s 100 A/s TVJ = TVJM; repetitive, IT = 860 A f = 50 Hz; tp = 200 s; VD = 2/3 VDRM; IG = 1 A; diG /dt = 1 A/s non repetitive, IT = ITAVM 500 A/s 1000 V/s 120 60 20 W W W VRGM 10 V TVJ TVJM Tstg -40...+130 130 -40...+125 C C C 3000 3600 V~ V~ 4.5 - 7 11 - 13 Nm Nm 750 g (dv/dt)cr TVJ = TVJM; VD = 2/3 VDRM; RGK = ; method 1 (linear voltage rise) PGM TVJ = TVJM; tp = 30 s IT = IT(AV)M; tp = 500 s PGAV VISOL 50/60 Hz, RMS IISOL < 1 mA Md Mounting torque (M6) Terminal connection torque (M8) Weight Typical including screws t = 1 min t=1s Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2013 IXYS All rights reserved 3 6 7 1 5 4 2 3 1 5 4 2 MCC MCD Features * International standard package * Direct Copper Bonded Al2O3-ceramic with copper base plate * Planar passivated chips * Isolation voltage 3600 V~ * UL registered, E 72873 * Keyed gate/cathode twin pins Applications * Motor control, softstarter * Power converter * Heat and temperature control for industrial furnaces and chemical processes * Lighting control * Solid state switches Advantages * Simple mounting * Improved temperature and power cycling * Reduced protection circuits 20130813c 1-5 MCC 255 MCD 255 Symbol Conditions typ. IRRM, IDRM VR / VD = VRRM / VDRM TVJ = TVJM VT, VF IT; IF = 600 A VT0 rt VGT max. 40 mA TVJ = 25C 1.36 V For power-loss calculations only TVJ = TVJM 0.8 0.68 V mW VD = 6 V VD = 6 V TVJ = 25C TVJ = -40C TVJ = 25C TVJ = -40C 2 3 150 220 V V mA mA VGD IGD VD = 2/3 VDRM; TVJ = TVJM 0.25 10 V mA IL tp = 30 s; VD = 6 V IG = 0.45 A; diG /dt = 0.45 A/s TVJ = 25C 200 mA IH VD = 6 V; RGK = ; TVJ = 25C 150 mA tgd VD = 1/2VDRM IG = 1 A; diG /dt = 1 A/s TVJ = 25C 2 s tq VD = 2/3 VDRM dv/dt = 50 V/s; -di/dt = 10 A/s IT = 300 A; VR = 100 V; tp = 200 s TVJ = TVJM QS IRM IT = 300 A; -di/dt = 50 A/s TVJ = TVJM RthJC per thyristor; DC current per module per thyristor; DC current per module IGT RthJK dS dA a 10 Characteristic Values 200 VG 1: IGT, TVJ = 130C 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 1 1 2 5 6 [V] 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W IGD, TVJ = 130C 0.1 10-3 10-2 10-1 100 101 102 IG [A] Fig. 3 Surge overload current ITSM/FSM: Crest value, t: duration 100 TVJ = 25C s typ. Creeping distance on surface Creepage distance in air Maximum allowable acceleration 4 3 760 275 C A 0.139 0.07 0.179 0.09 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2 tgd limit 10 [s] 1 10 0.01 100 0.1 1000 1 IG [A] 10000 10 Fig. 2 Gate trigger delay time IXYS reserves the right to change limits, test conditions and dimensions. (c) 2013 IXYS All rights reserved 20130813c 2-5 MCC 255 MCD 255 Dimensions in mm (1 mm = 0.0394") SW 13 M8 x 20 43 45 10 32 +0 -1,9 52 +0 -1,4 49 2 2.8 x 0.8 28.5 1 2 38 50 35 5 22.5 45 67 18 20 3 6.2 80 92 115 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 3751 Type ZY 180R (R = Right for pin pair 6/7) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2013 IXYS All rights reserved 20130813c 3-5 MCC 255 MCD 255 10000 400 106 50 Hz 80 % VRRM TVJ = 45C TVJ = 130C 8000 300 TVJ = 45C I2dt 6000 IT(F)SM I TVJ = 130C F(T)AVM 200 105 2 4000 DC 180 sin 120 60 30 [A s] [A] [A] 100 2000 0 0.001 0.01 0.1 1 104 1 10 t [ms] t [s] Fig. 3 Surge overload current IT(F)SM:Crest value, t: duration 2 Fig. 4 I dt versus time 0 0 25 50 75 100 125 150 TC [C] Fig. 4a Max. forward current at case temperature RthKA K/W 0.1 0.2 0.3 0.4 0.6 0.8 1.0 Ptot [W] DC 180 sin 120 60 30 IFAVM/TAVM [A] TA [C] Fig. 5 Power dissipation versus on-state current and ambient temperature (per thyristor or diode) RthKA K/W 0.03 0.06 0.1 0.15 0.2 0.3 0.4 Ptot [W] Circuit B6 3xMCC255 or 3xMCD255 IDAVM [A] TA [C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IXYS reserves the right to change limits, test conditions and dimensions. (c) 2013 IXYS All rights reserved 20130813c 4-5 MCC 255 MCD 255 2000 RthKA K/W 0.03 0.06 0.1 0.15 0.2 0.3 0.4 1500 Ptot 1000 [W] Circuit W3 3xMCC255 or 3xMCD255 500 0 0 100 200 300 400 500 0 25 50 IRMS [A] 75 100 125 150 TA [C] Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature RthJC for various conduct. angles d: 0.25 d DC 180 120 60 30 0.20 0.15 ZthJC 30 60 120 180 DC 0.10 [K/W] 0.05 0.00 10-3 10-2 10-1 t [s] 100 RthJC (K/W) 0.139 0.148 0.156 0.176 0.214 Constants for ZthJC calculation: 101 102 i 1 2 3 4 Rthi (K/W) 0.0066 0.0358 0.0831 0.0129 ti (s) 0.00054 0.098 0.54 12 Fig. 8 Transient thermal impedance junction to case (per thyristor/diode) RthJK for various conduct. angles d: 0.30 d DC 180 120 60 30 0.25 0.20 ZthJK 0.15 [K/W] Constants for ZthJK calculation: 30 60 120 180 DC 0.10 0.05 0.00 10-3 10-2 10-1 t [s] 100 101 RthJK (K/W) 0.179 0.188 0.196 0.216 0.254 102 i 1 2 3 4 5 Rthi (K/W) 0.0066 0.0358 0.0831 0.0129 0.0400 ti (s) 0.00054 0.0980 0.540 1200 12 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor/diode) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2013 IXYS All rights reserved 20130813c 5-5