2SC3233 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC3233 Switching Regulator and High Voltage Switching Applications High Speed DC-DC Converter Applications * Unit: mm Excellent switching times: tr = 1.0 s (max) tf = 1.0 s (max), (IC = 0.8 A) * High collector breakdown voltage: VCEO = 400 V Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 500 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V Collector current IC 2 A Base current IB 0.5 A Collector power dissipation Ta = 25C Tc = 25C Junction temperature Storage temperature range PC 1.0 20 W JEDEC Tj 150 C JEITA Tstg -55 to 150 C TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC JEITA TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2002-07-23 2SC3233 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 400 V, IE = 0 100 A Emitter cut-off current IEBO VEB = 7 V, IC = 0 1 mA Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 500 V Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0 400 V VCE = 5 V, IC = 0.1 A 20 VCE = 5 V, IC = 1 A 8 DC current gain hFE Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 0.2 A 1.0 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 0.2 A 1.5 V 1.0 2.5 1.0 Rise time tr 20 s OUTPUT IB1 Switching time Storage time Fall time tstg tf IB2 250 IB1 INPUT IB2 VCC 200 V IB1 = -IB2 = 0.08 A s DUTY CYCLE 1% Marking C3233 Product No. Lot No. Explanation of Lot No. Month of manufacture: January to December are denoted by letters A to L respectively. Year of manufacture: last decimal digit of the year of manufacture 2 2002-07-23 2SC3233 1.6 IC - VBE 2.0 180 Common emitter 120 Tc = 25C VCE = 5 V 0.8 (A) 80 60 40 1.2 20 IB = 10 mA 0.4 0 0 Common emitter Collector current IC Collector current IC (A) IC - VCE 2.0 2 4 6 8 10 Collector-emitter voltage 12 14 16 VCE (V) 1.6 Tc = 100C 1.2 25 -55 0.8 0.4 0 0 0.2 0.4 0.6 0.8 1.0 Base-emitter voltage 1.2 1.4 VBE (V) hFE - IC 200 Tc = 100C VCE = 5 V 50 25 30 rth - tw -55 10 1000 5 3 0.001 0.003 0.1 0.3 Collector-emitter saturation voltage VCE (sat) (V) Collector current IC 1 3 10 (A) Transient thermal resistance rth (C/W) DC current gain hFE Common emitter 100 VCE (sat) - IC (1) 1 0.1 0.001 0.01 0.1 1 Pulse width Common emitter 1 (2) 10 3 10 100 1000 tw (s) IC/IB = 5 0.5 0.3 Tc = -55C 100 25 0.1 Safe Operating Area 0.05 0.03 0.005 0.01 10 0.03 0.1 0.3 1 3 10 5 IC max (pulsed)* (A) Collector current IC (A) Collector current IC Base-emitter saturation voltage VBE (sat) (V) 100 Curves should be applied in thermal limited area. (single nonrepetitive pulse) (1) Infinite heat sink (2) No heat sink VBE (sat) - IC 5 3 Common emitter IC/IB = 5 Tc = -55C 1 0.5 25 0.3 100 0.005 0.01 0.03 0.1 0.3 Collector current IC 1 3 100 s* 1 ms* 1 (A) 500 s* 0.5 3 ms* 10 ms* 0.3 100 ms* 0.1 DC operation Tc = 25C *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 3 10 10 s* 3 IC max (continuous) 10 30 100 Collector-emitter voltage 3 300 1000 VCE (V) 2002-07-23 2SC3233 RESTRICTIONS ON PRODUCT USE 20070701-EN * The information contained herein is subject to change without notice. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 4 2002-07-23