DATA SH EET
Product specification
Supersedes data of 2000 Apr 19
File under Integrated Circuits, IC02
2000 Dec 13
INTEGRATED CIRCUITS
TDA6120Q
Video output amplifier
2000 Dec 13 2
Philips Semiconductors Product specification
Video output amplifier TDA6120Q
FEATURES
High large-signal bandwidth of 32 MHz (typ.) at
125 V (p-p)
High small-signal bandwidth of 47 MHz (typ.) at
60 V (p-p)
Rise/fall time of 12.5 ns for 125 V (p-p)
High slew rate of 10 V/ns
Low static power dissipation of 2.6 W at 200 V supply
voltage
High maximum output voltage
Bandwidth independent of voltage gain
Maximum overall voltage gain over 46 dB
High Power Supply Rejection Ratio (PSRR)
Fast cathode current measurement output for dark
current control loop
Differential voltage input.
GENERAL DESCRIPTION
The TDA6120Q is a single 32 MHz, 125 V (p-p) video
output amplifier contained in a plastic DIL-bent-SIL power
package.Thedeviceuseshigh-voltageDMOStechnology
and is intended to drive the cathodes of a CRT in High
Definition TVs (HDTVs) or monitors.
ORDERING INFORMATION
TYPE
NUMBER PACKAGE
NAME DESCRIPTION VERSION
TDA6120Q DBS13P plastic DIL-bent-SIL power package; 13 leads (lead length 7.7 mm) SOT141-8
2000 Dec 13 3
Philips Semiconductors Product specification
Video output amplifier TDA6120Q
BLOCK DIAGRAM
handbook, full pagewidth
MGK440
1×
1×
CURRENT
INPUT
out 1×
in out 4×
MIRROR
1×
in out
CASCODE
MIRROR
4×
in out
CASCODE
+J5 mA
0.7 pF
TDA6120Q
9, 11
6
2
n.c.
VCC
VIN
134
RCRC+VIN+
8
GND
12
13
7
OUTC
OUT
OUTM
IIN VDD
10
5
Fig.1 Block diagram.
handbook, full pagewidth
MGK441
442
68 pF
C1
RCRC+
135791113
24 6 8 10 12
22
VINVIN+
Cr
10 nF
CCC
47
µF
CDD
10
µF
CC
100
nF
CD
100
nF
TDA6120Q
22 k
Rf
IIN OUTM n.c. n.c. OUT
CRTVIN 220
50
Rflash
VCC VDD
Dflash
OUTCGND
+12 V +200 V
Vref
Ria
Ri
Fig.2 Top view.
2000 Dec 13 4
Philips Semiconductors Product specification
Video output amplifier TDA6120Q
PINNING
SYMBOL PIN DESCRIPTION
RC1 inverting input pre-emphasis
network
VIN2 inverting voltage input
RC+ 3 non-inverting input pre-emphasis
network
VIN+ 4 non-inverting voltage input
IIN 5 feedback current input
VCC 6 low supply voltage (12 V)
OUTM 7 cathode current measurement
output
GND 8 power ground
n.c. 9 not connected
VDD 10 high supply voltage (200 V)
n.c. 11 not connected
OUTC 12 cathode output
OUT 13 feedback output
handbook, halfpage
RC
VIN
RC+
VIN+
IIN
VCC
OUTM
GND
n.c.
VDD
n.c.
OUTC
OUT
1
2
3
4
5
6
7
8
9
10
11
12
13
TDA6120Q
MGK438
Fig.3 Pin configuration.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
VDD high supply voltage 0 280 V
VCC low supply voltage 0 20 V
Viinput voltage (pins 2 and 4) 0 VCC V
Vi(dif) differential mode input voltage (pins 2 and 4) VCC +VCC V
Vi(pe) pre-emphasis input voltage (pins 1 and 3) 0 VCC V
Vi(dif)(pe) differential mode pre-emphasis input voltage (pins 1 and 3) VCC +VCC V
VIIN input voltage (pin 5) 0 2VBE V
VOUTM measurement output voltage 0 20 V
Vooutput voltage (pins 12 and 13) 0 VDD V
Tstg storage temperature 55 +150 °C
Tjjunction temperature 20 +150 °C
VESD voltage peak human body model 2000 V
voltage peak machine model 300 V
2000 Dec 13 5
Philips Semiconductors Product specification
Video output amplifier TDA6120Q
handbook, halfpage
20 160
20
0
(1)
(2)
4
MGK442
8
12
16
04020 80 120
Tamb (°C)
Ptot
(W)
Fig.4 Power derating curve.
(1) Infinite heatsink.
(2) No heatsink.
THERMAL CHARACTERISTICS
QUALITY SPECIFICATION
Quality specification in accordance with
“SNW-FQ-611 part D”
.
SYMBOL PARAMETER VALUE UNIT
Rth(j-c) thermal resistance from junction to case 3.0 K/W
2000 Dec 13 6
Philips Semiconductors Product specification
Video output amplifier TDA6120Q
CHARACTERISTICS
Operating range: Tj=20 to +150 °C; VDD = 180 to 210 V; VCC = 10.8 to 13.2 V; VOUTM = 3 to 16.5 V;
VVIN= 1.5 to VCC 6 V; VVIN+= 1.5 to VCC 6 V. Test conditions: Tj=25°C; VDD = 200 V; VCC = 12 V; VVIN+ =3V;
V
OUTM =6V;C
L=10pF(C
Lconsists of parasitic and cathode capacitance); Rth(h-a) = 4 K/W; test circuit of Fig.5; unless
otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
IDD(q) quiescent high voltage
supply current VOUTC = 100 V 9 11 13 mA
ICC(q) quiescent low voltage supply
current VVIN=V
VIN+ 35 45 55 mA
Ibias input bias current
(pins 2 and 4) VOUTC = 100 V 76 −µA
V
OUTC DC output voltage
(pins 12 and 13) VVIN=V
VIN+ 85 103 120 V
VOUTC(T) DC output voltage
temperature drift
(pins 12 and 13)
VVIN=V
VIN+; temperature
range 30 °C<T
j< 110 °C100 25 +55 mV/K
I(offset)OUTM offset current of
measurement output note 1 30 0 +30 µA
IOUTM/IOUTC linearity of current transfer 50 µA<I
OUTC < +50 µA;
note 1 1.0
Ciinput capacitance
(pins 2 and 4) VOUTC =V
OUTC(max) 4pF
IOUTC(max) maximum dynamic peak
output current (pin 12) 20V<V
OUTC <V
DD 20 V 100 mA
VOUTC(min) minimum output voltage
(pin 12) 410V
V
OUTC(max) maximum output voltage
(pin 12) VDD 10 VDD 6V
VCC(sw) VCC switch level at which
pins OUT and OUTC
become HIGH
8.8 V
Gint internal gain 1.68 1.87 2.08
Bssmall-signal bandwidth
(pin 12) VOUTC(AC) = 60 V (p-p);
VOUTC(DC) = 100 V 40 47 MHz
Bllarge-signal bandwidth
(pin 12) VOUTC(AC) = 125 V (p-p);
VOUTC(DC) = 100 V 28 32 MHz
tpd cathode output propagation
time 50% input to 50%
output (pin 12)
VOUTC(AC) = 125 V (p-p);
VOUTC(DC) = 100 V; square
wave; f < 1 MHz;
tf(VIN−) = 10 ns;
tr(VIN−) = 10 ns; see
Figs 6 and 7
10 15 ns
2000 Dec 13 7
Philips Semiconductors Product specification
Video output amplifier TDA6120Q
Notes
1. The operating range of the measurement output OUTM is 3 to 16.5 V. Below 3 V, OUTM acts as a voltage source
with an output resistance such that the maximum current input from OUTM is 1.25 mA.
2. The ratio of the change in supply voltage to the change in input voltage when there is no change in output voltage.
to(r) cathode output rise time
10% output to 90% output
(pin 12)
VOUTC(AC) = 125 V (p-p);
VOUTC(DC) = 100 V; square
wave; f < 1 MHz;
tf(VIN−) = 10 ns;
tr(VIN−) = 10 ns; see Fig.6
10 12.5 18 ns
to(f) cathode output fall time 90%
output to 10% output
(pin 12)
VOUTC(AC) = 125 V (p-p);
VOUTC(DC) = 100 V; square
wave; f < 1 MHz;
tf(VIN−) = 10 ns;
tr(VIN−) = 10 ns; see Fig.7
10 12.5 15 ns
tst settling time 50% input to
(99% <output <101%)
(pin 12)
VOUTC(AC) = 125 V (p-p);
VOUTC(DC) = 100 V; square
wave f < 1 MHz;
tf(VIN−) = 10 ns;
tr(VIN−) = 10 ns; see
Figs 6 and 7
−−350 ns
SRrslew rate rise between
30Vto(V
DD 30 V) (pin 12) VVIN= 2 V (p-p); square
wave; f < 1 MHz;
tf(VIN−) = 10 ns;
tr(VIN−) =10ns
8V/ns
SRfslew rate fall between
(VDD 30 V) to 30 V (pin 12) VVIN= 2 V (p-p); square
wave; f < 1 MHz;
tf(VIN−) = 10 ns;
tr(VIN−) =10ns
10 V/ns
OVr cathode output voltage
overshoot rise (pin 12) VOUTC(AC) = 125 V (p-p);
VOUTC(DC) = 100 V; square
wave; f < 1 MHz;
tf(VIN−) = 10 ns;
tr(VIN−) = 10 ns; see
Figs 6 and 7
5%
OVf cathode output voltage
overshoot fall (pin 12) VOUTC(AC) = 125 V (p-p);
VOUTC(DC) = 100 V; square
wave; f < 1 MHz;
tf(VIN−) = 10 ns;
tr(VIN−) = 10 ns; see
Figs 6 and 7
20 %
PSRRh high voltage power supply
rejection ratio f < 50 kHz; note 2 44 dB
PSRRl low voltage power supply
rejection ratio f < 50 kHz; note 2 48 dB
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
2000 Dec 13 8
Philips Semiconductors Product specification
Video output amplifier TDA6120Q
handbook, full pagewidth
MGK443
442
22
Ria
Ri
47
RCC
47
RDD
147
Rflash
68 pF
22 k
Rf
C1
2 M
1 k
R3
100 k
R2
CCCC
50
RaRba
1 k
Rbb
RC
VIN
VIN
+12 V +200 V
Vref RC+
VIN+
IIN
VCC
OUTM
GND Im
VDD
OUTC
OUT
VOUT
1
2
C11 10 µF
C10 22 nF
C13 10 µF
47 µF
CCC
10 nF
C8
6.8 pF
C7
3.3 pF C9
136 pF
CDDD
10 µF
CDD
10 nF
C12 22 nF
3
4
5
6
7
8
10
12
13
TDA6120Q
Fig.5 Test circuit with gain of 40 dB.
Overall gain Gint Rf
Ri
-----
×=
2000 Dec 13 9
Philips Semiconductors Product specification
Video output amplifier TDA6120Q
162.5
150
100
50
37.5
163.75
161.25
tst
overshoot (in %)
t
t
0
x
x
to(r)
Voc
Vi
MGK444
tpd
Fig.6 Output (pins 12 and 13; rising edge) as a function of input signal.
2000 Dec 13 10
Philips Semiconductors Product specification
Video output amplifier TDA6120Q
162.5
150
100
50
37.5 38.75
36.25
overshoot (in %)
t
t
0
x
x
MGK445
Voc
Vi
tpd
tst
to(r)
Fig.7 Output (pins 12 and 13; falling edge) as a function of input signal.
FLASHOVER PROTECTION
The TDA6120Q needs an external protection diode
combinedwitha50 resistorto protectthevideo amplifier
against CRT flashover discharge.
An external 147 carbon high-voltage resistor in
combination with a 2 kV spark gap between the cathode
and ground will limit the maximum clamp current (for this
resistor value, the CRT has to be connected to the main
printed-circuit board).
This external network causes an increase in the rise and
fall times and a decrease in the overshoot.
Pin 10 must be decoupled to pin 8:
By a capacitor >100 nF with good HF behaviour (e.g.
foil). This capacitor must be placed as close as possible
to pins 10 and 8; definitely within 5 mm.
By a capacitor >10 µF on the picture tube base
printed-circuit board (common for 3 output stages).
2000 Dec 13 11
Philips Semiconductors Product specification
Video output amplifier TDA6120Q
TEST AND APPLICATION INFORMATION
Dissipation
Regarding dissipation, distinction must be made between
static dissipation (independent of frequency) and dynamic
dissipation (proportional to frequency). The static
dissipationoftheTDA6120Qis duetosupplycurrents,and
currents in the feedback network and CRT.
The static dissipation is given by the following equation:
Where:
Rf= feedback resistance
IOUTC = DC cathode current.
Thedynamic dissipationisgivenby thefollowingequation:
Pdyn =V
DD ×(CL+C
int)×f×VOUTC(p-p) ×b
Where:
CL= load capacitance
Cint = effective internal load capacitance
(approximately 7 pF)
f = frequency
VOUTC(p-p) = output voltage (peak-to-peak value)
b = non-blanking duty cycle (0.8).
The IC must be mounted on the picture tube base
printed-circuit board to minimize the load capacitance CL.
Switch-off
The TDA6120Q is equipped with a switch-off circuit to
guarantee a controlled switch-off behaviour of the output
pins. The switch-off function is activated when the low
supply voltage (VCC) drops below a reference level
(VCC(sw)). Then the voltage at output pins OUT and OUTC
is pulled to the high supply voltage level (VDD),
independant of input pin voltage levels.
Pstat VCC ICC VDD IDD
VOUTC VOUTC
Rf
------------------ VOUTC IOUTC
××
×+×=
2000 Dec 13 12
Philips Semiconductors Product specification
Video output amplifier TDA6120Q
INTERNAL PIN CONFIGURATION
handbook, full pagewidth
MGK439
ESD
ESD
ESD
ESD
TDA6120Q
7
8
12
10
6
ESD
ESD
13
2
1
ESD
ESD
ESD
4
3
ESD
5
RC+
VIN+
RCOUTC
VDD
VCC
OUT
OUTM
GND
VIN
IIN
Fig.8 Internal pin diagram.
2000 Dec 13 13
Philips Semiconductors Product specification
Video output amplifier TDA6120Q
PACKAGE OUTLINE
UNIT A e1
A2bpcD
(1) E(1) Z(1)
deD
hLL
3m
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
mm 17.0
15.5 4.6
4.4 0.75
0.60 0.48
0.38 24.0
23.6 20.0
19.6 10 3.4
12.2
11.8 1.7
e2
5.08 2.4
1.6
Eh
62.00
1.45
2.1
1.8
3.4
3.1 4.3
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
8.4
7.0
SOT141-8
0 5 10 mm
scale
Qj
0.25
w
0.6
v
0.03
x
D
L
E
A
c
A2
m
L3
Q
wM
bp
1
d
Ze2
e
e
113
j
97-12-16
99-12-17
DBS13P: plastic DIL-bent-SIL power package; 13 leads (lead length 7.7 mm) SOT141-8
vM
D
xh
Eh
non-concave
view B: mounting base side
B
2000 Dec 13 14
Philips Semiconductors Product specification
Video output amplifier TDA6120Q
SOLDERING
Introduction to soldering through-hole mount
packages
This text gives a brief insight to wave, dip and manual
soldering.A more in-depth accountofsolderingICs can be
found in our
“Data Handbook IC26; Integrated Circuit
Packages”
(document order number 9398 652 90011).
Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.
Soldering by dipping or by solder wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joints for more than 5 seconds.
Thetotal contacttimeofsuccessivesolder wavesmustnot
exceed 5 seconds.
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg(max)). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300 °C it may remain in contact for up to
10 seconds. If the bit temperature is between
300 and 400 °C, contact may be up to 5 seconds.
Suitability of through-hole mount IC packages for dipping and wave soldering methods
Note
1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
PACKAGE SOLDERING METHOD
DIPPING WAVE
DBS, DIP, HDIP, SDIP, SIL suitable suitable(1)
2000 Dec 13 15
Philips Semiconductors Product specification
Video output amplifier TDA6120Q
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS PRODUCT
STATUS DEFINITIONS (1)
Objective specification Development This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification Production This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or atanyotherconditions above thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse ofanyoftheseproducts, conveysnolicence ortitle
under any patent, copyright, or mask work right to these
products,and makes no representations orwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000 70
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United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
Printed in The Netherlands 753504/04/pp16 Date of release: 2000 Dec 13 Document order number: 9397 750 07562