J/SST111 Series Vishay Siliconix N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max (W) ID(off) Typ (pA) tON Typ (ns) J/SST111 -3 to -10 30 5 4 J/SST112 -1 to -5 50 5 4 J/SST113 v-3 100 5 4 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D D D D D Low On-Resistance: 111 < 30 W Fast Switching--tON: 4 ns Low Leakage: 5 pA Low Capacitance: 3 pF Low Insertion Loss Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response, Low Glitches Eliminates Additional Buffering Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters DESCRIPTION The J/SST111 series consists of all-purpose analog switches designed to support a wide range of applications. The J/SST113 are useful in a high-gain amplifier mode. For similar products in TO-206AA(TO-18) packaging, see the 2N/PN/SST4391 series, 2N4856A/4857A/4858A, and 2N5564/5565/5566 (duals) data sheets. The J series, TO-226AA (TO-92) plastic package, provides low cost, while the SST series, TO236 (SOT-23) package, provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). TO-226AA (TO-92) D 1 S 2 TO-236 (SOT-23) D 1 3 G S G 2 3 Top View Top View J111 J112 J113 SST111 (C1)* SST112 (C2)* SST113 (C3)* *Marking Code for TO-236 ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -35 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 seconds) . . . . . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa (TO-236) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW (TO-226AA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 360 mW Notes a. Derate 2.8 mW/_C above 25_C For applications information see AN105. Document Number: 70232 S-04028--Rev. E, 04-Jun-01 www.vishay.com 7-1 J/SST111 Series Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits J/SST111 Symbol Test Conditions Typa Min V(BR)GSS IG = -1 mA , VDS = 0 V -55 -35 VGS(off) VDS = 5 V, ID = 1 mA -3 Saturation Drain Currentb IDSS VDS = 15 V, VGS = 0 V 20 Gate Reverse Current IGSS Parameter Max J/SST112 Min Max J/SST113 Min Max Unit Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Drain Cutoff Current -35 V VGS = -15 V, VDS = 0 V Gate Operating Current -35 IG ID(off) -0.005 VDG = 15 V, ID = 10 mA -5 VDS = 5 V, VGS = -10 V 0.005 TA = 125_C rDS(on) VGS = 0 V, VDS = 0.1 V Gate-Source Forward Voltage VGS(F) IG = 1 mA , VDS = 0 V -1 -5 5 -1 -3 2 -1 mA -1 nA -3 TA = 125_C Drain-Source On-Resistance -10 pA 1 1 1 nA 3 30 50 100 W 0.7 V 6 mS 25 mS Dynamic Common-Source Forward Transconductance gfs Common-Source Output Conductance gos Drain-Source On-Resistance rds(on) Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Input Noise Voltage en VDS = 20 V, ID = 1 mA f = 1 kHz VGS = 0 V, ID = 0 mA f = 1 kHz VDS = 0 V, VGS = -10 V f = 1 MHz VDG = 10 V, ID = 1 mA f = 1 kHz 30 50 100 7 12 12 12 3 5 5 5 W pF 3 nV Hz Switching td(on) Turn-On Time Turn-Off Time tr td(off) 2 VDD = 10 V, VGS(H) = 0 V See Switching Circuit tf Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. www.vishay.com 7-2 2 ns 6 15 NCB Document Number: 70232 S-04028--Rev. E, 04-Jun-01 J/SST111 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage 80 160 IDSS rDS 60 120 40 80 20 40 0 rDS(on) - Drain-Source On-Resistance ( ) rDS @ ID = 1 mA, VGS = 0 IDSS @ VDS = 20 V, VGS = 0 -4 -6 -8 TA = 25 C 80 VGS(off) = -2 V 60 40 -4 V -8 V 20 0 0 -2 0 On-Resistance vs. Drain Current 100 200 IDSS - Saturation Drain Current (mA) rDS(on) - Drain-Source On-Resistance ( ) 100 -10 1 10 VGS(off) - Gate-Source Cutoff Voltage (V) ID - Drain Current (mA) Turn-On Switching On-Resistance vs. Temperature 5 tr approximately independent of ID VDD = 5 V, RG = 50 VGS(L) = -10 V ID = 1 mA rDS changes X 0.7%/_C 160 4 tr 120 Switching Time (ns) rDS(on) - Drain-Source On-Resistance ( ) 200 VGS(off) = -2 V 80 -4 V -8 V 40 3 td(on) @ ID = 12 mA 2 td(on) @ ID = 3 mA 1 0 0 -55 -35 5 -15 25 45 65 85 105 0 125 TA - Temperature ( _C) -2 -4 -6 -8 -10 VGS(off) - Gate-Source Cutoff Voltage (V) Capacitance vs. Gate-Source Voltage Turn-Off Switching 30 30 td(off) independent of device VGS(off) VDD = 5 V, VGS(L) = -10 V f = 1 MHz 24 18 Capacitance (pF) 24 Switching Time (ns) 100 tf @ VGS(off) = -2 V 12 18 12 td(off) Ciss @ VDS = 0 V 6 6 tf @ VGS(off) = -8 V Crss @ VDS = 0 V 0 0 0 2 4 6 ID - Drain Current (mA) Document Number: 70232 S-04028--Rev. E, 04-Jun-01 8 10 0 -4 -8 -12 -16 -20 VGS - Gate-Source Voltage (V) www.vishay.com 7-3 J/SST111 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Forward Transconductance and Output Conductance vs. Gate-Source Cutoff Voltage Noise Voltage vs. Frequency 100 50 gfs - Forward Transconductance (mS) Hz en - Noise Voltage nV / ID = 1 mA ID = 10 mA 1 40 gfs 30 250 20 10 0 10 100 1k 10 k 0 0 100 k f - Frequency (Hz) 1 mA -10 gig 10 mA big (mS) 1 mA IGSS @ 25_C 1 TA = 25_C I G -8 10 100 pA 10 pA -6 VDG = 10 V ID = 10 mA TA = 25_C ID = 10 mA TA = 125_C -4 Common-Gate Input Admittance 100 IGSS @ 125_C 1 nA -2 VGS(off) - Gate-Source Cutoff Voltage (V) Gate Leakage Current 10 nA - Gate Leakage gos 1 pA 0.1 pA 0.1 0 6 12 18 30 24 100 200 500 1000 f - Frequency (MHz) VDG - Drain-Gate Voltage (V) Common-Gate Forward Admittance Common-Gate Reverse Admittance 100 10 VDG = 10 V ID = 10 mA TA = 25_C VDG = 10 V ID = 10 mA TA = 25_C -gfg bfg -brg 1.0 10 (mS) (mS) gfg +grg -grg 0.1 1 0.01 0.1 100 200 500 f - Frequency (MHz) www.vishay.com 7-4 1000 100 200 500 1000 f - Frequency (MHz) Document Number: 70232 S-04028--Rev. E, 04-Jun-01 g os - Output Conductance (mS) 10 500 gfs and gos @ VDS = 20 V VGS = 0 V, f = 1 kHz VDS = 10 V J/SST111 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Gate Output Admittance Output Characteristics 100 100 VDG = 10 V ID = 10 mA TA = 25_C VGS(off) = -4 V 80 ID - Drain Current (mA) bog (mS) 10 gog 1 VGS = 0 V 60 -0.5 40 -1.0 -1.5 20 -2.0 -2.5 0.1 0 100 200 500 1000 0 2 4 10 8 VDS - Drain-Source Voltage (V) f - Frequency (MHz) Output Characteristics Transfer Characteristics 40 100 VGS(off) = -4 V VGS(off) = -4 V VDS = 20 V 80 VGS = 0 V -0.5 24 -1.0 16 -1.5 -2.0 8 ID - Drain Current (mA) 32 ID - Drain Current (mA) 6 TA = -55_C 60 25_C 40 20 -2.5 125_C -3.0 0 0 0 0.2 0.4 0.6 1.0 0.8 0 -1 VDS - Drain-Source Voltage (V) -2 -3 VGS - Gate-Source Voltage (V) VDD SWITCHING TIME TEST CIRCUIT J/SST111 J/SST112 J/SST113 VGS(L) -12 V -7 V -5 V RL* 800 W 1600 W 3200 W ID(on) 12 mA 6 mA 3 mA *Non-inductive INPUT PULSE Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Document Number: 70232 S-04028--Rev. E, 04-Jun-01 -5 -4 RL OUT VGS(H) VGS(L) SAMPLING SCOPE Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF 1 kW 51 W VGS Scope 51 W www.vishay.com 7-5