Copyright 1995 by Dallas Semiconductor Corporation.
All Rights Reserved. For important information regarding
patents and other intellectual property rights, please refer to
Dallas Semiconductor data books.
DS1644LPM
Nonvolatile Timekeeping RAM
DS1644LPM
041697 1/11
FEATURES
Upward compatible with the DS1643AL T imekeeping
RAM to achieve higher RAM density
Integrated NV SRAM, real time clock, crystal, power–
fail control circuit and lithium energy source
Low profile socketable module
255 mil package height
Clock registers are accessed identical to the static
RAM. These registers are resident in the eight top
RAM locations.
Totally nonvolatile with over 10 years of operation in
the absence of power
Access time of 120 ns and 150 ns
Quartz accuracy ±1 minute a month @ 25°C, factory
calibrated
BCD coded year, month, date, day, hours, minutes,
and seconds with leap year compensation valid up to
2100
Power–fail write protection allows for ±10% VCC pow-
er supply tolerance
ORDERING INFORMATION
DS1644L–XXX
–120 120 ns access
150 ns access–150
Low Profile Module
PIN ASSIGNMENT
OE
CE
WE
PFO
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
34
33
32
31
30
29
28
27
26
25
24
23
22
14
15
16
17
21
20
19
18
NC
NC
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
NC
NC
NC
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
GND
34–PIN LOW PROFILE MODULE
PIN DESCRIPTION
A0–A14 Address Input
CE Chip Enable
OE Output Enable
WE Write Enable
VCC +5 Volts
GND Ground
DQ0-DQ7 Data Input/Output
NC No Connection
PFO Power Fail Output
DESCRIPTION
The DS1644L is a low profile module that requires a
PLCC surface mountable socket and is functionally
equivalent to the DS1644. The DS1644L is a 32K x 8
nonvolatile static RAM with a full function real time clock
which are both accessible in a Byte–wide format. The
real time clock information resides in the eight upper-
most RAM locations. The RTC registers contain year,
month, date, day, hours, minutes, and seconds data in
24 hour BCD format. Corrections for the day of the
month and leap year are made automatically . The RTC
clock registers are double buffered to avoid access of in-
correct data that can occur during clock update cycles.
The double buf fered system also prevents time loss as
the timekeeping countdown continues unabated by ac-
cess to time register data. The DS1644L also contains
its own power–fail circuitry which deselects the device
when the VCC supply is in an out–of–tolerance condi-
tion. This feature prevents loss of data from unpredict-
able system operation brought on by low VCC as errant
access and update cycles are avoided.
DS1644LPM
041697 2/11
CLOCK OPERATIONS –
READING THE CLOCK
While the double buffered register structure reduces the
chance of reading incorrect data, internal updates to the
DS1644L clock registers should be halted before clock
data is read to prevent reading of data in transition.
However, halting the internal clock register updating
process does not affect clock accuracy. Updating is
halted when a one is written into the read bit, the seventh
most significant bit in the control register. As long as a
one remains in that position, updating is halted. After a
halt is issued, the registers reflect the count, that is day ,
date, and time that was current at the moment the halt
command was issued. However , the internal clock reg-
isters of the double buffered system continue to update
so that the clock accuracy is not affected by the access
of data. All of the DS1644L registers are updated simul-
taneously after the clock status is reset. Updating is
within a second after the read bit is written to zero.
DS1644L BLOCK DIAGRAM Figure 1
OSCILLA TOR AND
CLOCK COUNTDOWN
CHAIN
POWER MONITOR,
SWITCHING, AND
WRITE PROTECTION
VCC
POWER GOOD
CLOCK
REGISTERS
CE
WE
A0–A14
DQ0–DQ7
32.768 KHz
+
OE
32K X 8
NV SRAM
PFO
VBAT
DS1644LPM
041697 3/11
DS1644L TRUTH TABLE Table 1
VCC CE OE WE MODE DQ POWER
5 VOLTS 10%
VIH X X DESELECT HIGH–Z STANDBY
5 VOLTS 10%
X X X DESELECT HIGH–Z STANDBY
5 VOLTS ± 10% VIL X VIL WRITE DATA IN ACTIVE
VIL VIL VIH READ DATA OUT ACTIVE
VIL VIH VIH READ HIGH–Z ACTIVE
<4.5 VOLTS
>VBAT X X X DESELECT HIGH–Z CMOS STANDBY
<VBAT X X X DESELECT HIGH–Z DATA RETENTION
MODE
SETTING THE CLOCK
The eighth bit of the control register is the write bit. Set-
ting the write bit to a one, like the read bit, halts updates
to the DS1644L registers. The user can then load them
with the correct day , date and time data in 24 hour BCD
format. Resetting the write bit to a zero then transfers
those values to the actual clock counters and allows
normal operation to resume.
STOPPING AND STARTING THE CLOCK
OSCILLATOR
The clock oscillator may be stopped at any time. To in-
crease the shelf life, the oscillator can be turned off to
minimize current drain from the battery. The OSC bit is
the MSB for the seconds registers. Setting it to a one
stops the oscillator.
FREQUENCY TEST BIT
Bit 6 of the day byte is the frequency test bit. When the
frequency test bit is set to logic “1” and the oscillator is
running, the LSB of the seconds register will toggle at
512 Hz. When the seconds register is being read, the
DQ0 line will toggle at the 512 Hz frequency as long as
conditions for access remain valid (i.e., CE low , OE low,
and address for seconds register remain valid and
stable).
CLOCK ACCURACY
The DS1644L is guaranteed to keep time accuracy to
within ±1 minute per month at 25°C. The clock is cali-
brated at the factory by Dallas Semiconductor using
special calibration nonvolatile tuning elements. The
DS1644L does not require additional calibration, and
temperature deviations will have a negligible effect in
most applications. For this reason, methods of field
clock calibration are not available and not necessary.
Attempts to calibrate the clock that may be used with
similar device types (MK48T08 family) will not have any
effect even though the DS1644L appears to accept cal-
ibration data.
DS1644LPM
041697 4/11
DS1644L REGISTER MAP – BANK1 Table 2
ADDRESS
DATA
FUNCTION
ADDRESS
B7B6B5B4B3B2B1B0
FUNCTION
7FFF YEAR 00–99
7FFE X X X MONTH 01–12
7FFD X X DATE 01–31
7FFC X FT X X X DAY 01–07
7FFB X X HOUR 00–23
7FFA X MINUTES 00–59
7FF9 OSC SECONDS 00–59
7FF8 W R X X X X X X CONTROL A
OSC = STOP BIT R = READ BIT FT = FREQUENCY TEST
W = WRITE BIT X = UNUSED
NOTE:
All indicated “X” bits are not dedicated to any particular function and can be used as normal RAM bits.
RETRIEVING DATA FROM RAM OR CLOCK
The DS1644L is in the read mode whenever WE (write
enable) is high, and CE (chip enable) is low . The device
architecture allows ripple-through access to any of the
address locations in the NV SRAM. Valid data will be
available at the DQ pins within tAA after the last address
input is stable, providing that the CE and OE access
times and states are satisfied. If CE or OE access times
are not met, valid data will be available at the latter of
chip enable access (tCEA) or at output enable access
time (tOEA). The state of the data input/output pins (DQ)
is controlled by CE and OE. If the outputs are activated
before tAA, the data lines are driven to an intermediate
state until tAA. If the address inputs are changed while
CE and OE remain valid, output data will remain valid for
output data hold time (tOH) but will then go indeterminate
until the next address access.
WRITING DATA TO RAM OR CLOCK
The DS1644L is in the write mode whenever WE and
CE are in their active state. The start of a write is refer-
enced to the latter occurring high to low transition of WE
or CE. The addresses must be held valid throughout the
cycle. CE or WE must return inactive for a minimum of
tWR prior to the initiation of another read or write cycle.
Data in must be valid tDS prior to the end of write and re-
main valid for tDH afterward. In a typical application, the
OE signal will be high during a write cycle. However,
OE can be active provided that care is taken with the
data bus to avoid bus contention. If OE is low prior to
WE transitioning low the data bus can become active
with read data defined by the address inputs. A low tran-
sition on WE will then disable the outputs tWEZ after WE
goes active.
DS1644LPM
041697 5/11
DATA RETENTION MODE
When VCC is within nominal limits (VCC > 4.5 volts) the
DS1644L can be accessed as described above with
read or write cycles. However, when VCC is below the
power fail point VPF (point at which write protection oc-
curs) the internal clock registers and RAM are blocked
from access. This is accomplished internally by inhibit-
ing access via the CE signal. At this time the power–fail
output signal (PFO) will be driven active low and will
remain active until VCC returns to nominal levels. When
VCC falls below the level of the internal battery supply,
power input is switched from the VCC pin to the internal
battery and clock activity, RAM, and clock data are
maintained from the battery until VCC is returned to
nominal level.
INTERNAL BATTERY LONGEVITY
The DS1644L has a self contained lithium power source
that is designed to provide energy for clock activity , and
clock and RAM data retention when the VCC supply is
not present. The capability of this internal power supply
is sufficient to power the DS1644L continuously for the
life of the equipment in which it is installed. For specifi-
cation purposes, the life expectancy is 10 years at 25°C
with the internal clock oscillator running in the absence
of VCC power. The DS1644L is shipped from Dallas
Semiconductor with the clock oscillator turned off, so
the expected life should be considered to start from the
time the clock oscillator is first turned on. Actual life ex-
pectancy of the DS1644L will be much longer than 10
years since no internal lithium battery energy is con-
sumed when VCC is present. In fact, in most applica-
tions, the life expectancy of the DS1644L will be approx-
imately equal to the shelf life (expected useful life of the
lithium battery with no load attached) of the lithium bat-
tery which may prove to be as long as 20 years.
DS1644LPM
041697 6/11
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground –0.3V to +7.0V
Operating Temperature 0°C to 70°C
Storage Temperature –20°C to +70°C
Soldering Temperature 260°C for 10 seconds (See Note 7)
* This is a stress rating only and functional operation of the device at these or any other conditions above those
indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS (0°C to 70°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Supply Voltage VCC 4.5 5.0 5.5 V 1
Logic 1 Voltage All Inputs VIH 2.2 VCC+0.3 V
Logic 0 Voltage All Inputs VIL –0.3 0.8 V
DC ELECTRICAL CHARACTERISTICS (0°C tA 70°C; VCC=5.0V ± 10%)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Average VCC Power Supply Cur-
rent ICC1 75 mA 3
TTL Standby Current (CE = VIH) ICC2 6mA 3
CMOS Standby Current
(CE=VCC–0.2V) ICC3 4.0 mA 3
Input Leakage Current (any input) IIL –1 +1 µA
Output Leakage Current IOL –1 +1 µA
Output Logic 1 Voltage
(IOUT = –1.0 mA) VOH 2.4 V
Output Logic 0 Voltage
(IOUT = +2.1 mA) VOL 0.4 V
Write Protection Voltage VPF 4.0 4.25 4.5 V
DS1644LPM
041697 7/11
AC ELECTRICAL CHARACTERISTICS (0°C to 70°C; VCC = 5.0V ± 10%)
PARAMETER
SYMBOL
DS1644L–120 DS1644L–150
UNITS
NOTES
PARAMETER
SYMBOL
MIN MAX MIN MAX
UNITS
NOTES
Read Cycle Time tRC 120 150 ns
Address Access Time tAA 120 150 ns
CE Access Time tCEA 120 150 ns
CE Data Off Time tCEZ 40 50 ns
Output Enable Access T ime tOEA 100 120 ns
Output Enable Data Off Time tOEZ 40 50 ns
Output Enable to DQ Low–Z tOEL 5 5 ns
CE to DQ Low–Z tCEL 5 5 ns
Output Hold from Address tOH 5 5 ns
Write Cycle Time tWC 120 150 ns
Address Setup T ime tAS 0 0 ns
CE Pulse Width tCEW 100 120 ns
Address Hold from End of Write tAH1
tAH2 5
30 5
30 ns
ns 5
6
Write Pulse Width tWEW 120 150 ns
WE Data Off Time tWEZ 40 50 ns
WE or CE Inactive T ime tWR 10 10 ns
Data Setup T ime tDS 85 110 ns
Data Hold T ime High tDH1
tDH2 0
25 0
25 ns
ns 5
6
AC TEST CONDITIONS
Input Levels: 0V to 3V
T ransition Times: 5 ns
CAPACITANCE (tA = 25°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
Capacitance on all pins
(except DQ) CI7 pF
Capacitance on DQ pins CDQ 10 pF
DS1644LPM
041697 8/11
AC ELECTRICAL CHARACTERISTICS (POWER–UP/DOWN TIMING) (0°C to 70°C)
PARAMETER SYMBOL MIN TYP MAX UNITS NOTES
CE or WE at VIH before Power–
Down tPD 0µs
VPF (Max) to VPF (Min) VCC Fall
Time tF300 µs
VPF (Min) to VSO VCC Fall Time tFB 10 µs
VSO to VPF (Min) VCC Rise Time tRB 1µs
VPF (Min) to VPF (Max) VCC Rise
Time tR0µs
Power–Up tREC 15 25 35 ms
Expected Data Retention Time
(Oscillator On) tDR 10 years 4
DS1644L READ CYCLE TIMING
tRC tRC tWC
READ READ WRITE
tAH
tAS
tWEW
VALID INVALID OUTVALID OUT
tOEZ
tAA
tOH
tCEA
tCEL
tOEA
tOEL
A0–A14
CE
OE
WE
DQ0–DQ7
tWR
DS1644LPM
041697 9/11
DS1644L WRITE CYCLE TIMING
tWC tWC tRC
WRITE WRITE READ
A0–A14
CE
OE
WE
DQ0– VALID OUTVALID INVALID IN
VALID
OUT
tAA
tAH1
tOEA
tWEZ
tAS
tCEW
tCEZ tDS tDH2
tDH1
tDS
DQ7
tWR
tWEW
tWR
tAH2
POWER–DOWN/POWER–UP TIMING
VCC
tPD
tFB
CE
DATA RETENTION
tDR
IBATT
tF
VPF (MAX)
VPF (MIN)
tREC
tR
tRB
VPF (MIN)
VSO
VSO
PFO PFO
VPF (MAX)
VPFVPF
DS1644LPM
041697 10/11
NOTES:
1. All voltages are referenced to ground.
2. Typical values are at 25°C and nominal supplies.
3. Outputs are open.
4. Data retention time is at 25°C and is calculated from
the date code on the device package. The date code
XXYY is the year followed by the week of the year
in which the device was manufactured. For exam-
ple, 9225, would mean the 25th week of 1992.
5. tAH1, tDH1 are measured from WE going high.
6. tAH2, tDH2 are measured from CE going high.
7. Unencapsulatesd Low Profile Modules are not rec-
ommended for processing through conventional
wavesoldering techniques. The Use of a PLCC
socket is recommended for production purposes.
OUTPUT LOAD
+5 VOLTS
100 pF
D.U.T.
1.8K
1K
RECOMMENDED DS1644L MODULE SOCKET LAND PATTERNS
EITHER A TWO OR FOUR SIDED SOCKET MAY BE
UTILIZED FOR DS1644LPM INSTALLATION.
DS1644LPM
041697 11/11
DS1644LPM 34–PIN LOW PROFILE MODULE
A
F
B
E
D
C
DIM MIN MAX
A 0.955 0.980
B 0.840 0.855
C 0.230 0.250
D 0.975 0.995
E 0.047 0.053
F 0.015 0.025
PKG INCHES
NOTE:
Please contact the factory for information on PLCC Sur-
face mountable sockets.