ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
VCE = 1200
V
IC = 150
A
Doc. No. 5SYA1524
-
01 Dez. 04
• Low-loss, rugged IGBT SPT chip-set
• EMC friendly switching
characteristics
• Low profile compact baseless
package for good power cycling
• Suitable for snap-on gate-driver
connection
• Integrated PTC substrate
temperature sensor
Maximum rated values 1)
Parameter Symbol Conditions min max
Unit
Collector-emitter voltage VCES VGE = 0 V, Tvj ≥ 25 °C 1200
V
DC collector current IC Th = 60 °C 150 A
Peak collector current ICM tp = 1 ms, Th = 60 °C 300 A
Gate-emitter voltage VGES -20 20 V
Total power dissipation Ptot Th = 25 °C, per switch (IGBT) 465 W
DC forward current IF 150 A
Peak forward current IFM 300 A
Surge current IFSM VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave 1500
A
IGBT short circuit SOA tpsc VCC = 900 V, VCEM CHIP ≤ 1200 V
VGE ≤ 15 V, Tvj ≤ 125 °C 10 µs
Isolation voltage Visol 1 min, f = 50 Hz 2500
V
Junction temperature Tvj 150 °C
Case operating temperature Tc(op) -40 125 °C
Storage temperature Tstg -40 125 °C
M1 Base-heatsink, M5 screws 2 3
Mounting torques 2) M2 Main terminals, M6 screws 4 6 Nm
1) Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
2) For detailed mounting instructions refer to ABB Document No. 5SYA2017
IGBT Module LoPak4 SPT
5SNS 0150V120100
5SNS 0150V120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1524-01 Dez. 04 page 2 of 9
IGBT characteristic values 3)
Parameter Symbol Conditions min typ max
Unit
Collector (-emitter)
breakdown voltage V(BR)CES V
GE = 0 V, IC = 10 mA, Tvj = 25 °C 1200
V
Tvj = 25 °C 1.90 2.30 V
Collector-emitter 4)
saturation voltage VCE sat IC = 150 A, VGE = 15 V Tvj = 125 °C 2.10 V
Tvj = 25 °C 1 mA
Collector cut-off current ICES VCE = 1200 V, VGE = 0 V Tvj = 125 °C 2 mA
Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C -500
500 nA
Gate-emitter threshold voltage VGE(TO) IC = 6 mA, VCE = VGE, Tvj = 25 °C 4.5 6.5 V
Gate charge Qge IC = 150 A, VCE = 600 V,
VGE = -15 V .. 15 V 1850
nC
Input capacitance Cies 13.5
Output capacitance Coes 0.96
Reverse transfer capacitance Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C 0.65 nF
Tvj = 25 °C 135
Turn-on delay time td(on) Tvj = 125 °C 155 ns
Tvj = 25 °C 60
Rise time tr
VCC = 600 V,
IC = 150 A,
RG = 6.8 Ω,
VGE = ±15 V,
Lσ = 55 nH, inductive load
Tvj = 125 °C 65 ns
Tvj = 25 °C 555
Turn-off delay time td(off) Tvj = 125 °C 620 ns
Tvj = 25 °C 30
Fall time tf
VCC = 600 V,
IC = 150 A,
RG = 6.8 Ω,
VGE = ±15 V,
Lσ = 55 nH, inductive load
Tvj = 125 °C 50 ns
Tvj = 25 °C 12
Turn-on switching energy Eon VCC = 600 V, IC = 150 A,
VGE = ±15 V, RG = 6.8 Ω,
Lσ = 55 nH, inductive load
Tvj = 125 °C 17 mJ
Tvj = 25 °C 9.5
Turn-off switching energy Eoff VCC = 600 V, IC = 150 A,
VGE = ±15 V, RG = 6.8 Ω,
Lσ = 55 nH, inductive load
Tvj = 125 °C 15 mJ
Short circuit current ISC tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 900 V, VCEM CHIP ≤ 1200 V 850 A
Module stray inductance
plus to minus Lσ DC 20 nH
Th = 25 °C 1.6
Resistance, terminal-chip RCC’+EE’ T
h
= 125 °C 2.1 mΩ
3) Characteristic values according to IEC 60747 - 9
4) Collector-emitter saturation voltage is given at chip level
5SNS 0150V120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1524-01 Dez. 04 page 3 of 9
Diode characteristic values 5)
Parameter Symbol Conditions min typ max
Unit
Tvj = 25 °C 1.9 2.3
Forward voltage 6) VF IF = 150 A Tvj = 125 °C 1.95 V
Tvj = 25 °C 145
Reverse recovery current Irr Tvj = 125 °C 190 A
Tvj = 25 °C 14
Recovered charge Qrr Tvj = 125 °C 29 µC
Tvj = 25 °C 0.08
Reverse recovery time trr Tvj = 125 °C 0.17 ns
Tvj = 25 °C 5
Reverse recovery energy Erec
VCC = 600 V,
IF = 150 A,
VGE = ±15 V,
RG = 6.8 Ω
Lσ = 55 nH
inductive load
Tvj = 125 °C 11 mJ
5) Characteristic values according to IEC 60747 - 2
6) Forward voltage is given at chip level
Thermal properties
Parameter Symbol Conditions min typ max
Unit
IGBT thermal resistance 2)
junction to heatsink Rth(j-h)IGBT 0.270
K/W
Diode thermal resistance 2)
junction to heatsink Rth(j-h)DIODE
Heatsink: flatness < ±50 µm,
roughness < 6 µm without ridge
Thermal grease: conductivity ≥ 0.8 W/mK,
thickness 30 µm < t < 50 µm 0.380
K/W
Temperature sensor PTC RT = RT0 exp [B (1/T - 1/T0)]
RT0 = 1kΩ (±3%), B = -760 K (±2%), T0 = 298 K
Mechanical properties
Parameter Symbol Conditions min typ max
Unit
Dimensions L x W x H
Typical , see outline drawing 123 x 106.5 x 34.5 mm
Term. to base:
13.5
Clearance distance DC according to IEC 60664-1
and EN 50124-1 Term. to term:
11 mm
Term. to base:
14
Surface creepage distance DSC according to IEC 60664-1
and EN 50124-1 Term. to term:
11.5 mm
Weight 310 gr
PCB mounting Self tapping screw, Hole 2.5mm diameter, 6.0mm deep
Mounting 2) Control terminal Spring pins, pitch of pins = 4mm, pcb thickness = 1.6mm
2) For detailed mounting instructions refer to ABB Document No. 5SYA2017
5SNS 0150V120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1524-01 Dez. 04 page 4 of 9
Electrical configuration
Outline drawing 2)
Note: all dimensions are shown in mm
2) For detailed mounting instructions refer to ABB Document No. 5SYA2017
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
5SNS 0150V120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1524-01 Dez. 04 page 5 of 9
0
50
100
150
200
250
300
0 1 2 3 4 5
VCE [V]
IC [A]
17V
15V
13V
11V
9V
Tvj = 25 °C
0
50
100
150
200
250
300
0 1 2 3 4 5
VCE [V]
IC [A]
17V
15V
13V
11V
9V
Tvj = 125 °C
Fig. 1 Typical output characteristics, chip level Fig. 2 Typical output characteristics, chip level
0
50
100
150
200
250
300
0 1 2 3 4 5 6 7 8 9 101112
VGE [V]
IC [A]
125 °C
25 °C
V
CE = 20 V
0
0.5
1
1.5
2
2.5
0200 400 600 800 1000 1200 1400
VCE [V]
IC pulse / IC
Chip
Power terminals
V
CC ≤ 900 V, Tvj = 125 °C
V
GE = ±15 V, RG = 6.8 ohm
Fig. 3 Typical transfer characteristics, chip level Fig. 4 Turn-off safe operating area (RBSOA)
5SNS 0150V120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1524-01 Dez. 04 page 6 of 9
0.00
0.01
0.02
0.03
0.04
0.05
0.06
0 50 100 150 200 250 300 350
IC [A]
Eon, Eoff [J]
Eoff
Eon
V
CC = 600 V
RG = 6.8 ohm
V
GE = ±15 V
Tvj = 125 °C
Lσ = 55 nH
Esw[mJ] = 3.65 x 10-4 x IC2 + 0.118 x IC + 6.05
0.00
0.01
0.02
0.03
0.04
0.05
0 5 10 15 20 25 30 35 40
RG [ohm]
Eon, Eoff [J]
Eoff
Eon
V
CC = 600 A
IC = 150 A
V
GE = ±15 V
Tvj = 125 °C
Lσ = 55 nH
Fig. 5 Typical switching energies per pulse
vs collector current Fig. 6 Typical switching energies per pulse
vs gate resistor
0.01
0.10
1.00
0 50 100 150 200 250 300 350
IC [ A ]
td(on), tr, td(off), tf
[µs]
td(off)
td(on)
t
r
t
f
V
CC = 600 V
RG = 6.8 ohm
V
GE = ±15 V
Tvj = 125 °C
Lσ = 55 nH
0.01
0.10
1.00
10.00
0 5 10 15 20 25 30 35 40
RG [ohm]
td(on), tr, td(off), tf
[µs]
td(off)
td(on)
tr
t
f
V
CC = 600 V
IC = 150 A
V
GE = ±15 V
Tvj = 125 °C
Lσ = 55 nH
Fig. 7 Typical switching times
vs collector current Fig. 8 Typical switching times
vs gate resistor
5SNS 0150V120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1524-01 Dez. 04 page 7 of 9
0.1
1
10
100
0 5 10 15 20 25 30 35
VCE [V]
C [nF]
Cies
Coes
Cres
V
GE = 0 V
fosc = 1 MHz
V
osc = 50 mV
0
5
10
15
20
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Qg [µC]
VGE [V]
V
CC
= 600 V
V
CC = 800 V
IC = 150 A
Tvj = 25 °C
Fig. 9 Typical capacitances
vs collector-emitter voltage Fig. 10 Typical gate charge characteristics
0
50
100
150
200
020 40 60 80 100 120 140 160
Th [°C]
IC, IF [A]
IGBT
Diode
V
GE ≥ 15 V
Tvj
= 150 °C
0
200
400
600
800
1000
1200
1400
1600
1800
2000
020 40 60 80 100 120 140
T [°C]
RT [ohm]
)11(
00
TTB
TT eRR −
=298%),2(760%),3(1 00
K
T
K
B
k
R
T=±−=±Ω=
Fig. 11 Rated current vs temperature Fig. 12 PTC temperature sensor
5SNS 0150V120100
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1524-01 Dez. 04 page 8 of 9
0
2
4
6
8
10
12
14
16
18
20
050 100 150 200 250 300 350
IF [A]
Erec
[mJ]
0
20
40
60
80
100
120
140
160
180
200
Irr [A], Q rr [µC]
Irr
Erec
Qrr
V
CC = 600 V
RG = 6.8 ohm
Tvj = 125 °C
Lσ = 55 nH
Erec [mJ] = -2.19 x 10-4 x IF2 + 0.102 x IF + 0.796
0
50
100
150
200
250
300
0.0 1.0 2.0 3.0
VF [V]
IF [A]
25°C
125°C
Fig. 13 Typical reverse recovery characteristics
vs forward current Fig. 14 Typical diode forward characteristics,
chip level
0
5
10
15
20
25
30
35
0123456
di/dt [kA/µs]
Erec [mJ], Qrr [µC]
0
50
100
150
200
250
300
350
Irr [A]
RG = 39 ohm
RG = 18 ohm
RG = 10 ohm
RG = 2.2 ohm
RG = 6.8 ohm
V
CC = 600 V
IF = 150 A
Tvj = 125 °C
Lσ = 55 nH
Erec
Qrr
Irr
RG = 3.9 ohm
Fig. 15 Typical reverse recovery characteristics
vs gate resistor
5SNS 0150V120100
This product has been designed and qualified for industrial level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1524-01 Dez. 04
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
ih)-(jth ∑
=
i
τ
i 1 2 3 4 5
Ri(K/kW)
5.18 23.8 114 127
IGBT
τi(ms) 0.4900
00009
12.5 97.1 326
Ri(K/kW)
10.7 51.1 153 162 5.9
DIODE
τi(ms) 1.04 17.8 130 276 3816
0.0001
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
t [s]
Zth(j-h)
[K/W] IGBT, DIODE
Zth(j-h) IGBT
Zth(j-h) Diode
Fig. 16 Typical thermal impedance vs time
