AON7406
30V N-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=10V) 25A
R
DS(ON)
(at V
GS
=10V) < 17mΩ
R
DS(ON)
(at V
GS
=4.5V) < 23mΩ
Typical ESD protection HBM Class 2
100% UIS Tested
100% R
g
Tested
Symbol
V
DS
V
GS
I
DM
I
AS
, I
AR
E
AS
, E
AR
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJC
Maximum Junction-to-Case °C/W
°C/W
Maximum Junction-to-Ambient
A D
6.2 75
7.5
W
Power Dissipation
A
P
DSM
W
T
A
=70°C
16.7
2
T
A
=25°C
15
T
C
=25°C
T
C
=100°C
Power Dissipation
B
P
D
Continuous Drain
Current
18
9
Avalanche energy L=0.1mH
C
A
T
A
=25°C I
DSM
A
T
A
=70°C
50Pulsed Drain Current
C
Continuous Drain
Current I
D
25
The AON7406 uses advanced trench technology and
design to provide excellent R
DS(ON)
with low gate charge.
This device is suitable for use in SMPS and general
purpose applications.
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
30V
mJ
Avalanche Current
C
7A19
V±20Gate-Source Voltage
Drain-Source Voltage 30
°C
Thermal Characteristics Units
Maximum Junction-to-Ambient
A
°C/W
R
θJA
30
60 40
Parameter Typ Max
T
C
=25°C
3.1
6.7
T
C
=100°C
Junction and Storage Temperature Range -55 to 150
Top View
G
D
S
DFN 3x3A
Top View Bottom View
Pin 1
Pin 1
G
S
S
S
D
D
D
D
Rev 5: Dec. 2010 www.aosmd.com Page 1 of 6
AON7406
Symbol Min Typ Max Units
BV
DSS
30 V
V
DS
=30V, V
GS
=0V 1
T
J
=55°C 5
I
GSS
10 µA
V
GS(th)
Gate Threshold Voltage 1.2 1.8 2.4 V
I
D(ON)
50 A
14 17
T
J
=125°C 20 24
18 23 mΩ
g
FS
40 S
V
SD
0.75 1 V
I
S
15 A
C
iss
600 740 888 pF
C
oss
77 110 145 pF
C
rss
50 82 115 pF
R
g
0.5 1.1 1.7 Ω
Q
g
(10V) 12 15 18 nC
Q
g
(4.5V) 6 7.5 9 nC
Q
gs
2.5 nC
Q
gd
3 nC
t
D(on)
5 ns
t
r
3.5 ns
t
D(off)
19 ns
t
f
3.5 ns
t
rr
68 10 ns
Q
rr
14 18 22 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
R
DS(ON)
Static Drain-Source On-Resistance
I
DSS
Reverse Transfer Capacitance
Zero Gate Voltage Drain Current
Gate-Body leakage current
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
mΩ
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=9A
Drain-Source Breakdown Voltage
µA
V
DS
=V
GS
I
D
=250µA
V
DS
=0V, V
GS
= ±16V
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=9A
V
GS
=4.5V, I
D
=8A
Forward Transconductance
Diode Forward Voltage
Body Diode Reverse Recovery Charge I
F
=9A, dI/dt=500A/µs
Turn-Off DelayTime V
GS
=10V, V
DS
=15V, R
L
=1.67Ω,
R
GEN
=3Ω
Turn-Off Fall Time I
F
=9A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
Turn-On Rise Time
Turn-On DelayTime
V
GS
=10V, V
DS
=15V, I
D
=9A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
Total Gate Charge
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
Power dissipation P
DSM
is based on R
θJA
t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
Rev 5: Dec. 2010 www.aosmd.com Page 2 of 6
AON7406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
5
10
15
20
25
30
1 1.5 2 2.5 3 3.5 4
V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
I
D
(A)
0
5
10
15
20
25
30
0 5 10 15 20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
R
DS(ON)
(mΩ
Ω
Ω
Ω)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
I
S
(A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
Normalized On-Resistance
V
GS
=4.5V
I
D
=8A
V
GS
=10V
I
D
=9A
10
15
20
25
30
35
40
2 4 6 8 10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
R
DS(ON)
(mΩ
Ω
Ω
Ω)
25°C
125°C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=9A
25°C
125°C
0
5
10
15
20
25
30
0 1 2 3 4 5
V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
I
D
(A)
V
GS
=2.5V
3V
4V
5V
10V
Rev 5: Dec. 2010 www.aosmd.com Page 3 of 6
AON7406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0
2
4
6
8
10
0 3 6 9 12 15
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
200
400
600
800
1000
1200
0 5 10 15 20 25 30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0
40
80
120
160
200
0.0001 0.001 0.01 0.1 1 10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Z
θ
θ
θ
θJC
Normalized Transient
Thermal Resistance
C
oss
C
rss
V
DS
=15V
I
D
=9A
Single Pulse
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
C
=25°C
10
µ
s
0.0
0.1
1.0
10.0
100.0
1000.0
0.01 0.1 1 10 100
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10ms
1ms
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
C
=25°C
100
µ
s
R
θJC
=7.5°C/W
Rev 5: Dec. 2010 www.aosmd.com Page 4 of 6
AON7406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
40
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0
4
8
12
16
20
0 25 50 75 100 125 150
T
CASE
(°C)
Figure 13: Power De-rating (Note F)
Power Dissipation (W)
0
5
10
15
20
25
0 25 50 75 100 125 150
T
CASE
(°C)
Figure 14: Current De-rating (Note F)
Current rating I
D
(A)
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
Power (W)
T
A
=25°C
R
θJA
=75°C/W
1
10
100
1 10 100 1000
Time in avalanche, t
A
(µ
µµ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
I
AR
(A) Peak Avalanche Current
T
A
=25°C
T
A
=150°C
T
A
=100°C
T
A
=125°C
Rev 5: Dec. 2010 www.aosmd.com Page 5 of 6
AON7406
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dt
I
RM
rr
Vdd
Vdd
Q = - Idt
AR
AR
t
rr
Rev 5: Dec. 2010 www.aosmd.com Page 6 of 6
