© Semiconductor Components Industries, LLC, 2011
December, 2011 − Rev. 1
1Publication Order Number:
NGB8207AN/D
NGB8207AN, NGB8207ABN
Ignition IGBT
20 A, 365 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
•Ideal for Coil−on−Plug and Driver−on−Coil Applications
•Gate−Emitter ESD Protection
•Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
•Integrated ESD Diode Protection
•Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
•Low Saturation Voltage
•High Pulsed Current Capability
•Minimum Avalanche Energy − 500 mJ
•Gate Resistor (RG) = 70 W
•This is a Pb−Free Device
Applications
•Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
Collector−Emitter Voltage VCES 365 V
Gate−Emitter Voltage VGE $15 V
Collector Current−Continuous
@ TC = 25°C − Pulsed
IC20
50
ADC
AAC
Continuous Gate Current IG1.0 mA
Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz) IG20 mA
ESD (Charged−Device Model) ESD 2.0 kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
8.0
kV
ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C (Note 1)
PD165
1.1
W
W/°C
Operating & Storage Temperature Range TJ, Tstg −55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Assuming infinite heatsink Case−to−Ambient
20 AMPS, 365 VOLTS
VCE(on) = 1.75 V
Typ @ IC = 10 A, VGE . 4.5 V
C
E
GRG
RGE
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Device Package Shipping†
ORDERING INFORMATION
NGB8207ANT4G D2PAK
(Pb−Free)
800 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
D2PAK
CASE 418B
STYLE 4
MARKING DIAGRAM
NGB
8207AxG
AYWW
1
Gate
3
Emitter
4
Collector
2
Collector
NGB8207Ax = Device Code
x = N or B
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
1
NGB8207ABNT4G D2PAK
(Pb−Free)
800 / Tape & Reel
NGB8207AN, NGB8207ABN
http://onsemi.com
2
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−40° ≤ TJ ≤ 150°C)
Characteristic Symbol Value Unit
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 10 V, Pk IL = 16.5 A, L = 3.7 mH, Rg = 1 kW Starting TJ = 25°C
VCC = 50 V, VGE = 10 V, Pk IL = 10 A, L = 6.1 mH, Rg = 1 kW Starting TJ = 125°C
EAS 500
306
mJ
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
EAS(R) 2000
mJ
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case RqJC 0.9 °C/W
Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 50 °C/W
Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 3) TL275 °C
2. When surface mounted to an FR4 board using the minimum recommended pad size.
3. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Test Conditions Temperature Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage BVCES IC = 2.0 mA TJ = −40°C to 150°C 325 350 375 V
IC = 10 mA TJ = −40°C to 150°C 340 365 390
Zero Gate Voltage Collector Current ICES VCE = 24 V
VGE = 0 V TJ = 25°C 0.1 2.0 mA
VCE = 250 V
VGE = 0 V
TJ = 25°C−1.0 5
TJ = 150°C−10 125
TJ = −40°C−0.25 2.5
Reverse Collector−Emitter Clamp Voltage BVCES(R)
IC = −75 mA
TJ = 25°C 25 27 29 V
TJ = 150°C 25 29 31
TJ = −40°C 24 26 29
Reverse Collector−Emitter Leakage Current ICES(R)
VCE = −24 V
TJ = 25°C−0.5 1.1 mA
TJ = 150°C 20 25 40
TJ = −40°C−0.03 1.0
Gate−Emitter Clamp Voltage BVGES IG = $5.0 mA TJ = −40°C to 150°C 12 13 14.5 V
Gate−Emitter Leakage Current IGES VGE = $10 V TJ = −40°C to 150°C 500 700 1000 mA
Gate Resistor RGTJ = −40°C to 150°C 70 W
Gate−Emitter Resistor RGE TJ = −40°C to 150°C 14.25 16 25 kW
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage VGE(th)
IC = 1.0 mA
VGE = VCE
TJ = 25°C 1.2 1.5 2.0 V
TJ = 150°C 0.7 1.0 1.3
TJ = −40°C 1.4 1.7 2.0
Threshold Temperature Coefficient (Negative) −4.0 −mV/°C
Collector−to−Emitter On−Voltage VCE(on)
IC = 6.0 A
VGE = 4.0 V
TJ = 25°C 1.15 1.5 1.75 V
TJ = 150°C 1.2 1.4 1.75
TJ = −40°C 1.2 1.6 1.75
IC = 10 mA
VGE = 4.5 V
TJ = 25°C−0.62 1.0
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
NGB8207AN, NGB8207ABN
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3
ELECTRICAL CHARACTERISTICS
Characteristic UnitMaxTypMinTemperatureTest ConditionsSymbol
ON CHARACTERISTICS (Note 4)
Collector−to−Emitter On−Voltage VCE(on)
IC = 8.0 A
VGE = 4.0 V
TJ = 25°C 1.2 1.65 2.0 V
TJ = 150°C 1.4 1.6 2.0
TJ = −40°C 1.4 1.7 2.0
IC = 10 A
VGE = 3.7 V
TJ = 25°C 1.35 1.8 2.2
TJ = 150°C 1.5 1.9 2.2
TJ = −40°C 1.5 1.85 2.2
IC = 10 A
VGE = 4.0 V
TJ = 25°C 1.35 1.8 2.1
TJ = 150°C 1.5 1.8 2.1
TJ = −40°C 1.5 1.8 2.1
IC = 10 A
VGE = 4.5 V
TJ = 25°C 1.35 1.75 2.05
TJ = 150°C 1.4 1.75 2.1
TJ = −40°C 1.4 1.8 2.1
Forward Transconductance gfs IC = 6.0 A
VCE = 5.0 V
TJ = 25°C−15.8 −Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance CISS
f = 10 kHz
VCE = 25 V TJ = 25°C
750 810 900 pF
Output Capacitance COSS 75 90 105
Transfer Capacitance CRSS 4 7 12
SWITCHING CHARACTERISTICS
Turn−On Delay Time (Resistive)
Low Voltage
td(on) VCE = 14 V
RL = 1.0 W
VGE = 5.0 V
RG = 1000 W
TJ = 25°C 0.5 0.55 0.7 mSec
Rise Time (Resistive)
Low Voltage
trTJ = 25°C 2.0 2.32 2.7
Turn−Off Delay Time (Resistive)
Low Voltage
td(off) VCE = 14 V
RL = 1.0 W
VGE = 5.0 V
RG = 1000 W
TJ = 25°C 2.0 2.5 3.0
Fall Time (Resistive)
Low Voltage
tfTJ = 25°C 8.0 10 13
Turn−On Delay Time (Resistive)
High Voltage
td(on) VCE = 300 V
RL = 46 W
VGE = 5.0 V
RG = 1000 W
TJ = 25°C 0.5 0.65 0.75
Rise Time (Resistive)
High Voltage
trTJ = 25°C 0.7 1.8 2.0
Turn−Off Delay Time (Resistive)
High Voltage
td(off) VCE = 300 V
RL = 46 W
VGE = 5.0 V
RG = 1000 W
TJ = 25°C 4.0 4.7 6.0
Fall Time (Resistive)
High Voltage
tfTJ = 25°C 6.0 10 15
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
NGB8207AN, NGB8207ABN
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4
TYPICAL ELECTRICAL CHARACTERISTICS
Figure 1. Typical Self Clamped Inductive
Switching Performance (SCIS)
Figure 2. Typical Self Clamped Inductive
Switching Performance (SCIS)
L (mH)
20
090
5
10
0
15
100
ISCIS (A)
CLAMPING TIME (mS)
0
10
20
5
15
0
25
ISCIS (A)
IC, COLLECTOR CURRENT (A)
VCE(on), COLLECTOR−TO−EMITTER VOLTAGE (V)
8106412214
1.25
2.25
1.75
0.75
2.75
16
TJ = −40°C
−40 100400 180−20 20 60 120
TJ, JUNCTION TEMPERATURE (°C)
IC = 20 A
35
10
TJ = 25°C
TJ = 175°C
18 20 140
IC = 16 A
IC = 10 A
IC = 8.0 A
IC = 6.0 A
30 4020
Figure 3. Collector−to−Emitter Voltage vs.
Collector Current
Figure 4. Collector−to−Emitter Voltage vs.
Junction Temperature
25
30 30
35
150°C
80706050
25°C
900 1200100 300 400200
150°C
800700600500
25°C
10001100
VGE = 4.0 V
1.0
2.0
1.5
2.5
VCE(on), COLLECTOR−TO−EMITTER VOLTAGE (V)
1.25
2.25
1.75
2.75
2.0
1.5
2.5
80 160
VGE = 4.0 V
VGE = 6.0 V
4.5 V
VGE = 6.0 V
VGE = 2.5 V
Figure 5. On−Region Characteristics
@ TJ = 255C
Figure 6. On−Region Characteristics
@ TJ = −405C
40
10
2
IC, COLLECTOR CURRENT (A)
0
60
20
30
50
101357
VCE, COLLECTOR−TO−EMITTER VOLTAGE (V)
5.0 V
06489
40
10
2
IC, COLLECTOR CURRENT (A)
0
60
20
30
50
101357
VCE, COLLECTOR−TO−EMITTER VOLTAGE (V)
5.0 V
06489
VGE = 3.0 V
VGE = 3.5 V
VGE = 4.0 V
VGE = 4.5 V
VGE = 2.5 V
VGE = 3.0 V
VGE = 3.5 V
VGE = 4.0 V
NGB8207AN, NGB8207ABN
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS
6.0 V
5.0 V
TJ, JUNCTION TEMPERATURE (°C)
LEAKAGE CURRENT (mA)
100
0.1
10,000
1000
60
40
30
20
0
Figure 7. On−Region Characteristics
@ TJ = 1755C
Figure 8. Transfer Characteristics
Figure 9. Collector−to−Emitter Leakage
Current vs. Junction Temperature
Figure 10. Gate Threshold Voltage vs.
Temperature
VGE, GATE−TO−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
3.02.0 5.01.5 4.0
10
1
10
2.0
1.75
1.25
1.0
0.5
TJ, JUNCTION TEMPERATURE (°C)
VGE(th), GATE THRESHOLD VOLTAGE (V)
0.75
1.0
VCE ≥ 5.0 V
50
3.5 V
VGE = 2.5 V
40
10
2
IC, COLLECTOR CURRENT (A)
0
60
20
30
50
101357
VCE, COLLECTOR−TO−EMITTER VOLTAGE (V)
06489
TJ = 175°C
TJ = 25°C
TJ = −40°C
VCE = −24 V
VCE = 320 V
1.5
IC = 1 mA, VCE = VGE
4.5 V
4.0 V
3.0 V
2.5 3.5 4.5
−40 100400 180−20 20 60 120 14080 160
VCE = 250 V
−40 100400 180−20 20 60 120 14080 160
1
0.1
10
Figure 11. Capacitance Variation Figure 12. Resistive Switching Time Variation
vs. Temperature
TEMPERATURE (°C)
t, TIME (ms)
60 85−15 110 185160135
100
10
1
1000
10,000
COLLECTOR−TO−EMITTER VOLTAGE (V)
C, CAPACITANCE (pF)
4020 100 2001400 120
TJ = 25°C
VGE = 0 V
td(on)
VCC = 14 V
VGE = 5.0 V
RL = 1.0 W
RG = 1 kW
8060 160 180
Ciss
Coss
Crss
td(off)
tf
tr
3510−40
NGB8207AN, NGB8207ABN
http://onsemi.com
6
TYPICAL ELECTRICAL CHARACTERISTICS
dc
10 ms
1 ms
100 ms
10 ms
VGE = 4.0 V
Single Pulse
TC = 25°C
100
10
1
Figure 13. Forward Biased Safe Operating
Area
VCE, COLLECTOR−EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
1 10 1000100
0.1
VCE(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
Mounted on 2″ sq. FR4 board (1″ sq.
2 oz. Cu 0.06″ thick single sided)
0.000001 0.0010.0001 0.1
1
0.01
0.01
t,TIME (S)
RqJC(t), TRANSIENT THERMAL
RESISTANCE (°C/W)
1
0.1
Figure 14. Best Case Transient Thermal Resistance
(Non−normalized Junction−to−Case Mounted on Cold Plate)
0.00001
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) RqJC(t)
0.2
Single Pulse
0.1
0.05
0.02
0.01
Duty Cycle = 0.5
NGB8207AN, NGB8207ABN
http://onsemi.com
7
PACKAGE DIMENSIONS
SEATING
PLANE
S
G
D
−T−
M
0.13 (0.005) T
231
4
3 PL
K
J
H
V
E
C
A
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.340 0.380 8.64 9.65
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.83
D0.020 0.035 0.51 0.89
E0.045 0.055 1.14 1.40
G0.100 BSC 2.54 BSC
H0.080 0.110 2.03 2.79
J0.018 0.025 0.46 0.64
K0.090 0.110 2.29 2.79
S0.575 0.625 14.60 15.88
V0.045 0.055 1.14 1.40
−B−
M
B
STYLE 4:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
W
W
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
F0.310 0.350 7.87 8.89
L0.052 0.072 1.32 1.83
M0.280 0.320 7.11 8.13
N0.197 REF 5.00 REF
P0.079 REF 2.00 REF
R0.039 REF 0.99 REF
M
L
F
P
U
VIEW W−W
D2PAK 3
CASE 418B−04
ISSUE J
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
8.38
0.33
1.016
0.04
17.02
0.67
10.66
0.42
3.05
0.12
5.08
0.20
ǒmm
inchesǓ
SCALE 3:1
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NGB8207AN/D
PUBLICATION ORDERING INFORMATION
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