1
2N6439MOTOROLA RF DEVICE DATA
The RF Line
. . . designed primarily for wideband large–signal output amplifier stages in the
225 to 400 MHz frequency range.
•Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc
Output Power = 60 Watts over 225 to 400 MHz Band
Minimum Gain = 7.8 dB @ 400 MHz
•Built–In Matching Network for Broadband Operation Using Double
Match Technique
•100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
•Gold Metallization System for High Reliability Applications
MAXIMUM RATINGS*
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 33 Vdc
Collector–Base Voltage VCBO 60 Vdc
Emitter–Base Voltage VEBO 4.0 Vdc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°CPD146
0.83 Watts
W/°C
Storage Temperature Range Tstg –65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case RθJC 1.2 °C/W
ELECTRICAL CHARACTERISTICS* (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, IB = 0) V(BR)CEO 33 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0) V(BR)CES 60 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 5.0 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc
Collector Cutoff Current
(VCB = 30 Vdc, IE = 0) ICBO — — 2.0 mAdc
NOTE: (continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
*Indicates JEDEC Registered Data.
Order this document
by 2N6439/D
SEMICONDUCTOR TECHNICAL DATA
60 W, 225 to 400 MHz
CONTROLLED “Q”
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316–01, STYLE 1
Motorola, Inc. 1994
2N6439
2MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS* — continued (TC = 25°C unless otherwise noted.)
Characteristic UnitMaxTypMinSymbol
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 Adc, VCE = 5.0 Vdc) hFE 10 — 100 —
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob — 67 75 pF
BROADBAND FUNCTIONAL TESTS (Figure 6)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, Pout = 60 W, f = 225–400 MHz) GPE 7.8 8.5 — dB
Electrical Ruggedness
(Pout = 60 W, VCC = 28 Vdc, f = 400 MHz, VSWR 30:1
all phase angles)
ψNo Degradation in Output Power —
NARROW BAND FUNCTIONAL TESTS (Figure 1)
Common–Emitter Amplifier Power Gain
(VCC = 28 Vdc, Pout = 60 W, f = 400 MHz) GPE 7.8 10 — dB
Collector Efficiency
(VCC = 28 Vdc, Pout = 60 W, f = 400 MHz) η55 — — %
*Indicates JEDEC Registered Data.
Figure 1. 400 MHz Test Amplifier (Narrow Band)
C1
C4, C11 — 4.0
–
40 pF
C5
C8 — 33 pF
C9 — 1000 pF
C10 — 5.0 µF
R1 — 15 Ω
L1, L2 — 3/16″ x 1″ Copper Strap
L3 — 1.5 µH
L4 — 10 µH
L5 — 1 Turn #16 AWG, 5/16″ I.D.
C8
C7 C3
C9 C10
C4
L2
C5 DUT
C11 C2 L3
L1
R1 L4
C6 L5
VCC = 28 V
C1
3
2N6439MOTOROLA RF DEVICE DATA
Figure 2. Pout versus Frequency Figure 3. Output Power versus Input Power
Figure 4. Power Gain versus Frequency Figure 5. Output Power versus Supply Voltage
Figure 6. Output Power versus Supply Voltage
NARROW BAND DATA
100
80
60
40
20
0
200 250 300 350 400 450
f, FREQUENCY (MHz)
Pin = 8 W
6 W
4 W
2 W
VCC = 28 V
P , OUTPUT POWER (WATTS)
out
120
0Pin, INPUT POWER (WATTS)
P , OUTPUT POWER (WATTS)
out
100
80
60
40
20 2 4 6 8 10 12 14 16 18 20
VCC = 28 V
400 MHz
12
250 300 350 400 450
f, FREQUENCY (MHz)
GPE, COMMON-EMITTER AMPLIFIER
POWER GAIN (dB)
11
10
9
8
200
Pout = 60 W
VCC = 28 V
100
10 VCC, SUPPLY VOLTAGE (VOLTS)
P , OUTPUT POWER (WATTS)
out
80
60
40
20
014 18 22 26 30
100
10 VCC, SUPPLY VOLTAGE (VOLTS)
P , OUTPUT POWER (WATTS)
out
80
60
40
20
014 18 22 26 30
f = 225 MHz
Pin = 8 W
4 W
4 W
Pin = 6 W
f = 400 MHz
f = 225 MHz
2N6439
4MOTOROLA RF DEVICE DATA
Figure 7. 225 to 400 MHz Broadband Test Circuit Schematic
Figure 8. Power Gain versus Frequency Figure 9. Efficiency versus Frequency
BROADBAND DATA (Circuit, Figure 7)
C1 — 68 pF
C2, C4, C8, C10 — 27 pF
C3, C5, C11 — 10 pF
C6, C7 — 51 pF
C9 — 1.0
ā
–
ā
10 pF JOHANSON
C12 — 100 pF
C13, C15 — 680 pF
C14, C16 — 1.0 µF, 35 V Tantalum
C17 — 0.1 µF, ERIE Red Cap
RFC1 — Ferrite Bead Choke, Feroxcube VK200 19/4B
B — Ferroxcube 56-590-65/4B Ferrite Bead
T1, T2 — 25 Ohms (UT25) Miniature Coaxial Cable, 1 turn
R1 — 11 Ω, 1.0 W
R2 — 20 Ω, 1/4 W
L1 — 10 Turns, #22 AWG, 1/8″ I.D.
L2 — 4 Turns, #16 AWG, 1/4″ I.D.
L3 — 6 Turns, #24 AWG, 1/8″ I.D.
L4, L5 — 1″ x 0.25″ Microstrip Line
Board Material 0.031″ Thick Teflon-Fiberglass
50
Ω
LINE C1
T1
4:1 C2 C3C4 C5
C6 C7
C8 C9 C10 C11 4:1
T2 50
Ω
LINEL5 C12
C16
C15
R1
C13
B
L1 L2
A
DUT
C14
+
–
RFC1
0.8
″
L4
AL3 R2 C17
10
8
6
4
2
0200 250 300 350 400
Pout = 60 W
VCC = 28 V
f, FREQUENCY (MHz)
GPE, POWER GAIN (dB)
100
80
200 250 300 350 400
f, FREQUENCY (MHz)
EFFICIENCY (%)
60
40
20
0
Pout = 60 W
VCC = 28 V
VCC
0.5
″
5
2N6439MOTOROLA RF DEVICE DATA
Figure 10. Input VSWR versus Frequency Figure 11. Series Equivalent Input-Output Impedance
6
5
4
3
2
1400350300250200 f, FREQUENCY (MHz)
INPUT VSWR
Pout = 60 W
VCC = 28 V
Zin
f = 225 MHz
450
450
400
275 350 400
f = 225 MHz Pout = 60 W, VCC = 28 V
ZOL* = Conjugate of the optimum load
ZOL* = impedance into which the device
ZOL* = output operates at a given output
ZOL* = power, voltage and frequency.
FREQUENCY
MHz Zin
OHMS ZOL*
OHMS
225
275
350
400
450
0.7 + j1.6
0.9 + j2.2
2.2 + j2.1
1.2 + j0.6
0.5 + j1.6
2.2 – j1.8
2.1 – j0.9
2.1 – j0.1
2.0 + j0.2
1.9 + j0.9
350
.3
0.2
0.1 0.1
ZOL*275
2N6439
6MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
CASE 316–01
ISSUE D
NOTES:
1. FLANGE IS ISOLATED IN ALL STYLES.
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. EMITTER
4. BASE
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A24.38 25.14 0.960 0.990
B12.45 12.95 0.490 0.510
C5.97 7.62 0.235 0.300
D5.33 5.58 0.210 0.220
E2.16 3.04 0.085 0.120
F5.08 5.33 0.200 0.210
H18.29 18.54 0.720 0.730
J0.10 0.15 0.004 0.006
K10.29 11.17 0.405 0.440
L3.81 4.06 0.150 0.160
N3.81 4.31 0.150 0.170
Q2.92 3.30 0.115 0.130
R3.05 3.30 0.120 0.130
U11.94 12.57 0.470 0.495
4
3
2
1
F
D
R
Q
L
K
EJB
A
H
N
C
U
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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2N6439/D
*2N6439/D*
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