AON6204 30V N-Channel MOSFET General Description Product Summary The AON6204 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode. VDS 30V 24A ID (at VGS=10V) RDS(ON) (at VGS=10V) < 12m RDS(ON) (at VGS = 4.5V) < 18m 100% UIS Tested 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25C Pulsed Drain Current C Continuous Drain Current TA=25C 20 V A 19 IDM 110 14 IDSM TA=70C Units V 24 ID TC=100C Maximum 30 A 11 Avalanche Current C IAS, IAR 21 A Avalanche energy L=0.1mH C TC=25C EAS, EAR 22 mJ Power Dissipation B TA=25C Power Dissipation A Junction and Storage Temperature Range Rev 1 : March 2011 1.9 Steady-State Steady-State RJA RJC www.aosmd.com W 1.2 TJ, TSTG Symbol t 10s W 13 PDSM TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 31 PD TC=100C -55 to 150 Typ 29 56 3.3 C Max 35 67 4 Units C/W C/W C/W Page 1 of 6 AON6204 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V Gate-Body leakage current VDS=0V, VGS= 20V Gate Threshold Voltage VDS=VGS ID=250A 1.4 ID(ON) On state drain current VGS=10V, VDS=5V 110 VGS=10V, ID=20A TJ=125C VGS=4.5V, ID=15A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance A 5 IGSS Units V 1 TJ=55C Static Drain-Source On-Resistance Max 30 VDS=30V, VGS=0V VGS(th) RDS(ON) Typ 100 nA 1.9 2.4 V 10 12 14.5 18 14.5 18 m 1 V 30 A A 33 0.72 m S 400 510 670 pF VGS=0V, VDS=15V, f=1MHz 150 220 310 pF 13 22 38 pF VGS=0V, VDS=0V, f=1MHz 0.8 1.6 2.4 SWITCHING PARAMETERS Qg(10V) Total Gate Charge 6 8 10 nC Qg(4.5V) Total Gate Charge 2.6 3.5 4.0 nC 1.6 2 2.4 nC 0.8 1.4 2 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=10V, VDS=15V, ID=20A VGS=10V, VDS=15V, RL=0.75, RGEN=3 4.3 ns 8 ns 15.8 ns tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/s 8 3.4 11 14 ns Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s 13 17 21 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on RJA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse ratin g. G. The maximum current rating is limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: March 2011 www.aosmd.com Page 2 of 6 AON6204 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 60 10V VDS=5V 80 7V 50 6V 5V 40 ID (A) ID(A) 4.5V 60 4V 30 40 20 3.5V 20 VGS=3V 10 0 125C 25C 0 0 1 2 3 4 5 0 1 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 20 Normalized On-Resistance 1.8 18 VGS=4.5V 16 RDS(ON) (m ) 2 14 12 VGS=10V 10 VGS=10V ID=20A 1.6 1.4 17 VGS=4.5V 5 ID=15A 1.2 2 10 1 8 0 5 10 15 20 25 0.8 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 50 75 100 125 150 175 0 Temperature (C) 18 Figure 4: On-Resistance vs. Junction Temperature (Note E) 40 1.0E+02 1.0E+01 35 ID=20A 40 30 1.0E+00 25 1.0E-01 125C 125C IS (A) RDS(ON) (m ) 25 20 25C 1.0E-02 1.0E-03 15 10 1.0E-04 25C 1.0E-05 5 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: March 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6204 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 800 10 VDS=15V ID=20A Ciss 600 Capacitance (pF) VGS (Volts) 8 6 4 400 Coss 200 2 Crss 0 0 0 2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics 0 8 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 160 100.0 30 10.0 TJ(Max)=150C TC=25C 10s RDS(ON) limited 100us 1ms 1.0 DC Power (W) ID (Amps) 10 200 1000.0 120 TJ(Max)=150C TC=25C 0.1 80 40 0.0 0 0.01 0.1 1 VDS (Volts) 10 100 0.0001 10 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Z JC Normalized Transient Thermal Resistance 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=4C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: March 2011 www.aosmd.com Page 4 of 6 AON6204 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100.0 IAR (A) Peak Avalanche Current 35 Power Dissipation (W) 30 TA=25C TA=100C TA=125C TA=150C 25 20 15 10 5 0 10.0 0 0.000001 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 125 150 10000 40 35 TA=25C 1000 30 Power (W) Current rating ID(A) 100 TCASE (C) Figure 13: Power De-rating (Note F) 25 20 15 17 5 2 10 100 10 10 5 0 1 0 25 50 75 100 125 150 0.00001 TCASE (C) Figure 14: Current De-rating (Note F) Z JA Normalized Transient Thermal Resistance 0.1 10 1000 0 18 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 0.001 40 RJA=67C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1: March 2011 www.aosmd.com Page 5 of 6 AON6204 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 1: March 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6