SB0503EC
No. A0414-1/3
Applications
•High frequency rectification (switching regulators, converters, choppers).
Features
•Low switching noise.
•Low leakage current and high reliability due to planar structure.
•Ultraminiature (1008 size) and thin (0.6mm) leadless package.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Repetitive Peak Reverse Voltage VRRM 30 V
Nonrepetitive Peak Reverse Surge Voltage VRSM 35 V
Average Output Current IO0.5 A
Surge Forward Current IFSM 50Hz sine wave, 1 cycle 5 A
Junction Temperature Tj --55 to +150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Reverse Voltage VRIR=0.2mA 30 V
Forward Voltage VFIF=0.5A 0.65 V
Reverse Current IRVR=15V 1.5 µA
Interterminal Capacitance C VR=10V, f=1MHz 6 pF
Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 10 ns
Thermal Resistance Rth(j-a)
Mounted in Cu-foiled area of 0.72mm
2
✕0.03mm
200 °C / W
on glass epoxy board
Marking : DA
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0414
N2906SB TI IM TC-00000343
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
SB0503EC Low IR Schottky Barrier Diode
30V, 0.5A Rectifier
SB0503EC
No. A0414-2/3
Package Dimensions Electrical Connection
unit : mm (typ)
7035-002
trr Test Circuit
2
1
2
1
Top View
0.7
0.3
0.6 0.6 1.0
Bottom View
0.8 Polarity Discriminating Mark
1 : Anode
2 : Cathode
SANYO : ECSP1008-2
00.1
IT11082
100 35
IT11083
0.001
2
3
5
7
0.01
2
3
5
7
0.1
2
0.2 0.3 0.4 0.5 0.6 0.90.7 0.8
1000
10
100
0.1
1.0
0.01
0.001 20 3051525
Ta=1
50°
C
100
°
C
1
25
°
C
Ta=150
°
C
100
°
C
75
°
C
50
°
C
0
°
C
25°C
1
25°
C75
°
C
50
°
C
25
°
C
--25
°
C
0
°
C
3
5
7
1.0
2IF -- VF
Forward Current, IF -- A
Forward Voltage, VF -- V
IR -- VR
Reverse Voltage, VR -- V
Reverse Current, IR -- µA
Anode Cathode
Anode
Cathode
Cathode Mark (On the top)
*Electorodes : on the bottom
Cathode Mark (Top)
Top view
Duty≤10%
50Ω100Ω10Ω
--5V trr
10µs
10mA10mA
1mA
SB0503EC
No. A0414-3/3
0.1 1.0
2
10
23
7
5
3
2
7
5
3
5
100
72 10
3357 2 5
IT10242
Reverse Voltage, VR -- V
C -- VR
Interterminal Capacitance, C -- pF
Tc -- IO
Case Temperature, Tc -- °C
Average Output Current, IO -- A
(2) (4) (3)(1)
0
00.1
0.35
0.50
0.30
0.45
0.40
0.10
0.05
0.25
0.20
0.15
0.2 0.3 0.4 0.60.5
IT10239
(4)
(3)
(1)
0203525 3015105
(2)
IT10240
4.0E--06
0.0E+00
2.0E--06
6.0E--06
8.0E--06
1.2E--05
1.0E--05
1.4E--05
(1)Rectangular wav
e θ
=60
°
(2)Rectangular wav
e θ
=120
°
(3)Rectangular wav
e θ
=180
°
(4)Sine wav
e θ
=180
°
Average Output Current, IO -- A
PF(AV) -- IO
Average Forward Power Dissipation, PF(AV) -- W
PR(AV) -- VRM
Peak Reverse Voltage, VRM -- V
Average Reverse Power Dissipation, PR(AV) -- W
(1)Rectangular wave θ=300°
(2)Rectangular wave θ=240°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
180°
360°
VR
Sine wave
θ
360°
VR
Rectangular
wave
θ
360°
Rectangular
wave
180°
360°
Sine wave
(4)
(3)
0 0.1 0.2 0.3
20
60
40
180
160
140
80
100
120
00.4 0.60.5
(2)(1)
IT11697
θ
360°
180°
360°
(1)Rectangular wave θ=60°
(2)Rectangular wave θ=120°
(3)Rectangular wave θ=180°
(4)Sine wave θ=180°
Rectangular
wave
Sine
wave
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
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and all semiconductor products fail with some probability. It is possible that these probabilistic failures
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PS
This catalog provides information as of November, 2006. Specifications and information herein are subject
to change without notice.
