SEMiX®33c
Trench IGBT Modules
SEMiX 253GD176HDc
Preliminary Data
Features
 
  
   
 
   !
Typical Applications
"  #
$%
 #
Remarks
  !  # &
'(((   
  # &
')((
GD
Absolute Maximum Ratings  )*+,    #
Symbol Conditions Values Units
IGBT
 '-((
. )* 0( + )*( '0( "
.12 '  3(( "
4 5 )(
6,  7%1".78 9  : ;( <<< = '*( ')* +
 ", ' < ;(((
Inverse diode
.> )* 0( + );( '-( "
.>12 '  3(( "
.>2 '( ? <? 6 )* + '*(( "
Characteristics  )*+,    #
Symbol Conditions min. typ. max. Units
IGBT
4 4 , . @ " *,) *,0 @,;
. 4 (,  , 6 )* ')* + ' "
7 6 )* ')* + ' (,A ',) ','
 4 '* , 6 )* ')* + @,- '(,3 0,3 ') B
 . '*( ", 4 '* ,
6 )* ')* +,  
) ),;* ),;* ),A
 #  # ') >
 4 (,  )* , ' 2C (,* >
 (,; >
D )( 
1E=E :, )* ')* + (,- ' B
#F ')(( , . '*( " 
# F 4 5 '* 
  14 14 G, 6 ')* + '(( *( H
Inverse diode
>  .> '*( "? 4 (?6 )* ')*
+,  
',- ',- ',A ',A
7 6 )* ')* + ',' (,A ',3 ','
6 )* ')* + ; *,3 ; *,3 B
.112 .> '*( "? 6 )* ')* + "
I #F# "FJ J
 4 ( H
Thermal characteristics
16:  .4K (,') LFM
16:N  . N# (,'- LFM
16:>N  >MN LFM
1:  # (,('; LFM
Temperature sensor
1)* )* + * 5*O PG
K)*F0* 1)1'QRK'F):'F'S ? RLS?K 3;)( L
Mechanical data
2F2 P 2* F   2@ 3F),* * F* 8
00)
SEMiX 253GD176HDc
1 01-03-2006 GES © by SEMIKRON
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC= f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic
SEMiX 253GD176HDc
2 01-03-2006 GES © by SEMIKRON
Fig. 7 Typ. switching times vs. ICFig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT Fig. 10 Transient thermal impedance of FWD
Fig. 11 CAL diode forward characteristic Fig. 12 Typ. CAL diode peak reverse recovery current
SEMiX 253GD176HDc
3 01-03-2006 GES © by SEMIKRON
Fig. 13 Typ. CAL diode recovered charge
 2T 33
4N  2T 33
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SEMiX 253GD176HDc
4 01-03-2006 GES © by SEMIKRON