V
RRM
= 50 V - 1000 V
I
F
= 35 A
Features
• Types up to 1000 V V
RRM
KBPC-T/W Package
• Silicon junction
Mechanical Data
Case: Mounted in the bridge encapsulation
Polarity: Marked on case
KBPC3506T/W thru KBPC3510T/W
• High efficiency
Silicon Bridge
Rectifier
• Metal case
Mounting position: Hole for #10 screw
Maximum ratings, at T
j
= 25 °C, unless otherwise specified (KBPCXXXXT uses KBPC-T package while KBPCXXXXW
uses KBPC-W
p
acka
g
e
)
Parameter Symbol Unit
Repetitive peak reverse voltage V
RRM
V
RMS reverse voltage V
RMS
V
DC blocking voltage V
DC
V
Continuous forward current I
F
A
Operating temperature T
j
°C
Storage temperature T
stg
°C
Parameter Symbol Unit
Diode forward voltage
Thermal characteristics
Thermal resistance, junction -
case R
thJC
°C/W
1.4
500 500
5
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
5
V
R
= 50 V, T
j
= 25 °C
I
F
= 17.5 A, T
j
= 25 °C
Reverse current I
R
V
F
V
R
= 50 V, T
j
= 100 °C
5
KBPC3506T/W KBPC3508T/W
1.1
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
A
600
Conditions
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤ 55 °C
Conditions
KBPC3506T/W KBPC3508T/W KBPC3510T/W
800
560420
1.4
KBPC3510T/W
1.1
μA
-55 to 150 -55 to 150
-55 to 150 -55 to 150 -55 to 150
1.4
35 35 35
400 400 400
600 1000
700
1000
500
800
1.1
-55 to 150
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KBPC3506T/W thru KBPC3510T/W
www.genesicsemi.com 2
