FQD1N80TM_NL - Fairchild Semiconductor

FQD1N80 / FQU1N80

800V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

Features

• 1.0A, 800V, RDS(on) = 20Ω @VGS = 10 V

• Low gate charge ( typical 5.5nC)

• Low Crss ( typical 2.7pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Thermal Characteristics

Symbol Parameter FQD1N80 / FQU1N80 Units

VDSS Drain-Source Voltage 800 V

IDDrain Current - Continuous (TC = 25°C) 1.0 A

- Continuous (TC = 100°C) 0.63 A

IDM Drain Current - Pulsed (Note 1) 4.0 A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 90 mJ

IAR Avalanche Current (Note 1) 1.0 A

EAR Repetitive Avalanche Energy (Note 1) 4.5 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.0 V/ns

PDPower Dissipation (TA = 25°C) * 2.5 W

Power Dissipation (TC = 25°C) 45 W

- Derate above 25°C 0.36 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJC Thermal Resistance, Junction-to-Case -- 2.78 °C/W

RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W

* When mounted on the minimum pad size recommended (PCB Mount)

I-PAK

FQU Series

D-PAK

FQD Series

January 2009

QFET

• RoHS Compliant

FQD1N80 / FQU1N80

Electrical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L = 170mH, IAS = 1.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ 1.0A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperature

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA800 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = 250 µA, Referenced to 25°C -- 1.0 -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- -- 10 µA

VDS = 640 V, TC = 125°C -- -- 100 µA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

On Characteristics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0 -- 5.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = 10 V, ID = 0.5 A -- 15.5 20 Ω

gFS Forward Transconductance VDS = 50 V, ID = 0.5 A -- 0.75 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 150 195 pF

Coss Output Capacitance -- 20 26 pF

Crss Reverse Transfer Capacitance -- 2.7 3.5 pF

Switching Characteristics

td(on) Turn-On Delay Time VDD = 400 V, ID = 1.0 A,

RG = 25 Ω

-- 10 30 ns

trTurn-On Rise Time -- 25 60 ns

td(off) Turn-Off Delay Time -- 15 40 ns

tfTurn-Off Fall Time -- 25 60 ns

QgTotal Gate Charge VDS = 640 V, ID = 1.0 A,

VGS = 10 V

-- 5.5 7.2 nC

Qgs Gate-Source Charge -- 1.1 -- nC

Qgd Gate-Drain Charge -- 3.3 -- nC

Drain-Source Diode Characteristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 1.0 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 4.0 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.0 A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0 V, IS = 1.0 A,

dIF / dt = 100 A/µs

-- 300 -- ns

Qrr Reverse Recovery Charge -- 0.6 -- µC

246810

10-1

100

150oC

25oC

-55oC

! Notes :

1. VDS = 50V

2. 250"s Pulse Test

ID, Drain Current [A]

VGS, Gate-Source Voltage [V]

0123456

VDS = 400V

VDS = 160V

VDS = 640V

! Note : ID = 1.0 A

VGS , Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

10-1 100101

100

150

200

250

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

! Notes :

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0.2 0.4 0.6 0.8 1.0 1.2

10-1

100

150#

! Notes :

1. VGS = 0V

2. 250"s Pulse Test

25#

IDR , Reverse Drain Current [A]

VSD, Source-Drain voltage [V]

0.0 0. 2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2. 0

VGS = 20V

VGS = 10V

! Note : TJ = 25#

RDS(ON) [$],

Drain-Source On-Resistance

ID, Drain Current [A]

10-1 100101

10-2

10-1

100

VGS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

! Notes :

1. 250"s Pulse Test

2. TC = 25#

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On-Region Characteristics

FQD1N80 / FQU1N80

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

! Notes :

1. VGS = 0 V

2. ID

= 250 "A

BV DSS , (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

! Notes :

1. VGS = 10 V

2. ID = 0.5 A

RDS(ON) , (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

10-5 10-4 10-3 10-2 10-1 100101

10-1

100

! N o tes :

1 . Z%JC(t) = 2.78 #/W M a x.

2 . D u ty F ac to r, D = t1/t2

3 . TJM - TC = PDM * Z%JC(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Z%JC

(t), Thermal Response

t1, Square W ave Pulse Duration [sec]

25 50 75 100 125 150

0.0

0.2

0.4

0.6

0.8

1.0

1.2

ID, Drain Current [A]

TC, Case Temperature [#

]

100101102103

10-2

10-1

100

101

10 ms

1 ms

100"s

Operation in This Area

is Limited by R DS(on)

! Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 7. Breakdown Voltage Variation

vs. Temperature

Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Transient Thermal Response Curve

PDM

FQD1N80 / FQU1N80

Charge

VGS

10V

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K&

200nF

12V

Same Type

as DUT

Charge

VGS

10V

Qgs Qgd

3mA

VGS

DUT

VDS

300nF

50K&

200nF

12V

Same Type

as DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS

DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

10V DUT

t p

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FQD1N80 / FQU1N80

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD controlled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Period

--------------------------

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD controlled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Period

--------------------------

D = Gate Pulse Width

Gate Pulse Period

--------------------------

FQD1N80 / FQU1N80

6.60 ±0.20

2.30 ±0.10

0.50 ±0.10

5.34 ±0.30

0.70 ±0.20

0.60 ±0.20

0.80 ±0.20

9.50 ±0.30

6.10 ±0.20

2.70 ±0.20 9.50 ±0.30

6.10 ±0.20

2.70 ±0.20

MIN0.55

0.76 ±0.10 0.50 ±0.10

1.02 ±0.20

2.30 ±0.20

6.60 ±0.20

0.76 ±0.10

(5.34)

(1.50)

(2XR0.25)

(5.04)

0.89 ±0.10

(0.10) (3.05)

(1.00)

(0.90)

(0.70)

0.91 ±0.10

2.30TYP

[2.30±0.20]

Mechanical Dimensions

TO-252 (DPAK) (FS PKG Code 36)TO-252 (DPAK) (FS PKG Code 36)TO-252 (DPAK) (FS PKG Code 36)

TO-252 (DPAK) (FS PKG Code 36)

1:1

Scale 1:1 on letter size paper

Dimensions shown below are in:

millimeters

Pa rt Weight per unit (gram): 0.33

FQD1N80 / FQU1N80

6.60 ±0.20

0.76 ±0.10

MAX0.96

2.30TYP

[2.30±0.20] 2.30TYP

[2.30±0.20]

0.60 ±0.20

0.80 ±0.10

1.80 ±0.20

9.30 ±0.30

16.10 ±0.30

6.10 ±0.20

0.70 ±0.20

5.34 ±0.20

0.50 ±0.10

2.30 ±0.20

(0.50) (0.50)(4.34)

IPAK

Mechanical Dimensions

Dimensions in Millimeters

I - PAK

Rev. I37

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intended to be an exhaustive list of all such trademarks.

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As used herein:

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and (c) whose failure to perform when properly used in accordance with

instructions for use provided in the labeling, can be reasonably

expected to result in a significant injury of the user.

2. A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause

the failure of the life support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Build it Now™

CorePLUS™

CorePOWER™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK®

EfficentMax™

EZSWITCH™ *

™

Fairchild®

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FACT®

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MicroPak™

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Motion-SPM™

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PDP SPM™

Power-SPM™

PowerTrench®

PowerXS™

Programmable Active Droop™

QFET®

QS™

Quiet Series™

RapidConfigure™

™

Saving our world, 1mW /W /kW at a time™

SmartMax™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SupreMOS™

SyncFET™

The Power Franchise®

TinyBoost™

TinyBuck™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

μSerDes™

UHC®

Ultra FRFET™

UniFET™

VCX™

VisualMax™

XS™

Datasheet Identification Product Status Definition

Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.

Preliminary First Production

Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without

notice to improve design.

No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.

Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.

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www.fairchildsemi.com, under Sales Support.

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proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild

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up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and

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FQD1N80 / FQU1N80

Rev. A3. January 2009