SCH1301 Ordering number : ENN8099A P-Channel Silicon MOSFET SCH1301 General-Purpose Switching Device Applications Features * * * Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 Gate-to-Source Voltage VGSS 8 V --2.4 A Drain Current (DC) ID Drain Current (Pulse) IDP PD Allowable Power Dissipation PW10s, duty cycle1% Mounted on a ceramic board (900mm20.8mm) V --9.6 A 0.8 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) yfs Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Conditions ID=--1mA, VGS=0V VDS=--4V, VGS=0V VDS=--12V, VGS=0V Ratings min typ Unit max --12 V --1 A --10 A 10 A --1.0 V 90 120 m ID=--0.7A, VGS=--2.5V ID=--0.3A, VGS=--1.8V 125 175 m 165 280 m ID=--0.1A, VGS=--1.5V VDS=--6V, f=1MHz 330 580 m VGS=6.4V, VDS=0V VDS=--6V, ID=--1mA VDS=--6V, ID=--1.3A ID=--1.3A, VGS=--4.5V --0.3 2.52 VDS=--6V, f=1MHz VDS=--6V, f=1MHz Marking : JA 4.2 S 450 pF 100 pF 85 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71505 MS IM TB-00001682 / N3004PE TS IM TB-00000519 No.8099-1/4 SCH1301 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Turn-ON Delay Time td(on) See specified Test Circuit. 15 Rise Time tr td(off) See specified Test Circuit. 70 ns See specified Test Circuit. 65 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge ns See specified Test Circuit. 50 ns VDS=--6V, VGS=--4.5V, ID=--2.6A 6.5 nC 0.8 nC Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd VDS=--6V, VGS=--4.5V, ID=--2.6A VDS=--6V, VGS=--4.5V, ID=--2.6A Diode Forward Voltage VSD IS=--2.6A, VGS=0V Package Dimensions 2.0 nC --0.87 --1.5 V Switching Time Test Circuit unit : mm 7028-002 VDD= --6V VIN 0V --4.5V 1.6 0.2 ID= --1.3A RL=4.6 VIN 1.5 D 2 3 0.5 1 VOUT PW=10s D.C.1% G 0.56 0.05 1.6 0.05 0.2 6 5 4 0.25 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SCH1301 P.G 50 S SANYO : SCH6 ID -- VDS VDS= --6V --0.5 0 0 --0.2 --0.1 --0.3 --0.4 Drain-to-Source Voltage, VDS -- V 25 VGS= --1.0V 0 --0.2 --0.5 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Gate-to-Source Voltage, VGS -- V IT04325 RDS(on) -- VGS 250 C --0.5 --1.0 C --1.0 --1.5 C V --1.5 --1.5 --2.0 --25 V 8 --1. 75 Drain Current, ID -- A --2.0 Ta= 5V --3 . 5V --2.5 --4 . Drain Current, ID -- A V .5 --2 --3 . --2.5 ID -- VGS --3.0 0V --3.0 --1.8 IT04326 RDS(on) -- Ta 300 Static Drain-to-Source On-State Resistance, RDS(on) -- m Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C 200 150 ID= --0.7A --1.3A 100 50 0 0 --1 --2 --3 --4 --5 --6 Gate-to-Source Voltage, VGS -- V --7 --8 IT04327 250 .8V = --1 , VGS 200 --0.3A I D= 150 --2.5V , V GS= .7A I D= --0 .5V --4 A, V GS= I D= --1.3 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- C 120 140 160 IT08145 No.8099-2/4 SCH1301 yfs -- ID 5 --25 Ta= 3 C C 75 2 1.0 --1.0 7 5 3 2 7 2 3 5 7 2 --1.0 3 5 --0.1 --0.4 7 --0.8 f=1MHz Ciss 5 Ciss, Coss, Crss -- pF tr 100 td(off) 7 tf 5 3 2 3 2 Crss 7 5 3 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 7 0 Drain Current, ID -- A --3.5 --3.0 --2.5 --2.0 --1.5 --1.0 3 2 0 4 5 6 Total Gate Charge, Qg -- nC 7 IT04333 --8 --10 --12 IT04332 ASO IDP= --9.6A <10s 1m s 10 ID= --2.4A DC m op 10 er --1.0 7 5 3 2 s 0m s ati on (T a= 25 C ) Operation in this area is limited by RDS(on). --0.1 7 5 3 2 --0.5 3 --6 2 --10 7 5 2 --4 Drain-to-Source Voltage, VDS -- V VDS= --6V ID= --2.6A 1 --2 IT04331 VGS -- Qg --4.5 0 Coss 100 td(on) --4.0 --1.2 IT04330 7 2 10 --0.1 --1.0 Ciss, Coss, Crss -- VDS 1000 VDD= --6V VGS= --4.5V 3 --0.6 Diode Forward Voltage, VSD -- V IT04329 SW Time -- ID 5 Switching Time, SW Time -- ns 2 --25C 5 25C 25C 7 3 Ta= 75C 10 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V VGS=0V 7 2 5 --0.1 Ta=25C Single pulse Mounted on a ceramic board (900mm20.8mm) --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT08146 PD -- Ta 1.0 Allowable Power Dissipation, PD -- W IS -- VSD --10 VDS= --6V Source Current, IS -- A Forward Transfer Admittance, yfs -- S 3 0.8 M ou nte do na 0.6 ce ram ic bo ard 0.4 (9 00 mm 0.2 2 0 .8m m) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 IT08147 No.8099-3/4 SCH1301 Note on usage : Since the SCH1301 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2005. Specifications and information herein are subject to change without notice. PS No.8099-4/4