2SK3816
No.8054-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8054
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
D2404QA TS IM TB-00000610
2SK3816 N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•4V drive.
•Motor drive, DC / DC converter.
•Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 60 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID40 A
Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 160 A
Allowable Power Dissipation PD1.65 W
Tc=25°C50W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Enargy (Single Pulse) *1 EAS 60 mJ
Avalanche Current *2 IAV 40 A
Note : *1 VDD=20V, L=50µH, IAV=40A
*2 L≤50µH, single pulse
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 60 V
Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0 1 µA
Gate-to-Source Leakage Current IGSS VGS= ±16V, VDS=0 ±10 µA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward T ransfer Admittance yfsVDS=10V, ID=20A 16 27 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=20A, VGS=10V 20 26 mΩ
RDS(on)2 ID=20A, VGS=4V 28 40 mΩ
Marking : K3816 Continued on next page.
http://semicon.sanyo.com/en/network
2SK3816
No.8054-2/4
Continued from preceding page. Ratings
Parameter Symbol Conditions min typ max Unit
Input Capacitance Ciss VDS=20V, f=1MHz 1780 pF
Output Capacitance Coss VDS=20V, f=1MHz 266 pF
Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 197 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 16.5 ns
Rise T ime trSee specified Test Circuit. 160 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 160 ns
Fall T ime tfSee specified Test Circuit. 160 ns
Total Gate Charge Qg VDS=30V, VGS=10V, ID=40A 40 nC
Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=40A 6.5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=30V, VGS=10V, ID=40A 11.5 nC
Diode Forward Voltage VSD IS=40A, VGS=0 1.05 1.5 V
Package Dimensions Package Dimensions
unit : mm unit : mm
2093A 2090A
Switching Time Test Circuit Unclamped Inductive Test Circuit
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
10.2
20.9 11.5
9.4
0.8
1.6
1.2
0.9
11.0 8.8
4.5 1.3
0.4
2.55
2.55
2.7
123
PW=10µs
D.C.≤1%
P.G 50Ω
G
S
D
ID=20A
RL=1.5Ω
VDD=30V
VOUT
2SK3816
VIN
10V
0V
VIN
50Ω
≥50Ω
RG DUT
VDD
L
15V
0V
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
10.2
1.2
2.55
2.552.55
2.55
4.5
0 to 0.3
0.4
1.3
9.93.0
2.7
1.35 8.8
1.4
1.5max
0.8
0.8123
2SK3816
No.8054-3/4
IT07814 IT07815
IT07812 IT07813
0.2 0.4 0.6 1.00.8 1.2 2.01.81.61.40
0
5
10
25
15
50
30
20
40
45
35
--50 --25 150
03010 15 20 255
100
1000
IT07819
IT07817
IT07816
0.1 1.0
23 57
3
10
1.0
7
7
7
5
5
3
2
3
5
2
3
2
3
2
10
2 3 57 2 3 57
3456789210
0
50
70
60
20
30
40
10
50
60
20
30
40
10
00 25 50 75 100 125
7
5
5
VGS=3V
6V
8V
10V
Tc=25
°C
ID=20
A
Tc=75
°C
25°C
--25
°C
ID=20A, VGS=4V
ID=20A, VGS=10V
Tc= --25°
C
75°C
25
°C
VDS=10V
f=1MHz
Coss
Ciss
Crss
IT07818
0.1 23 1.0
57 2 3 57 2 3 5
10
10
100
5
7
2
3
5
7
2
3
5
td(off)
tf
td(on)
tr
VDD=30V
VGS=10V
4V
ID -- VDS ID -- VGS
RDS(on) -- VGS RDS(on) -- Tc
yfs -- IDIF -- VSD
Ciss, Coss, Crss -- VDS
SW Time -- ID
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Case Temperature, Tc -- °C
Drain Current, ID -- A
Forward T ransfer Admittance, yfs -- S
Diode Forward Voltage, VSD -- V
Forward Current, IF -- A
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Drain Current, ID -- A
Switching Time, SW Time -- ns
0.5 1.0 2.01.5 2.5 4.54.03.53.00
0
5
10
25
15
30
20
40
50
35
25°C
--25
°
C
25°C
Tc= --25
°
C
75
°
C
Tc=
75
°
C
VDS=10V
1.51.20.3 0.6 0.90
0.01
0.1
1.0
10
100
5
7
3
2
5
7
3
2
5
7
3
2
5
7
3
2
Tc=
75°C
25
°
C
--
25
°
C
VGS=0
2SK3816
No.8054-4/4
PS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2004. Specifications and information herein are subject
to change without notice.
IT07811
IT07821
0
020 40 60 80 100 120
1.65
140 160
2.0
1.5
1.0
0.5
0.1
1.0
10
100
3
2
3
5
7
2
2
3
5
7
2
3
5
7
23 5723 5723 57
1.00.1 10 100
IDP=160A
ID=40A
100µs
1ms
10ms
100ms
DC operation
10
µs
Operation in
this area is
limited by RDS(on).
IT07820
0 5 10 2015 25 30 4035
0
2
4
6
8
9
1
3
5
7
10 VDS=30V
ID=40A
IT07822
0
020 40 60 80 100 120
60
50
140 160
40
30
20
10
A S O
PD -- Ta PD -- Tc
VGS -- Qg
Gate-to-Source Voltage, VGS -- V
Amibient Tamperature, Ta -- °C
Allowable Power Dissipation, PD -- W
Case Tamperature, Tc -- °C
Allowable Power Dissipation, PD -- W
Drain Current, ID -- A
Tc=25°C
Single pulse
Total Gate Charge, Qg -- nC Drain-to-Source Voltage, VDS -- V
Note on usage : Since the 2SK3816 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
