2SK3816 Ordering number : ENN8054 2SK3816 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features * * * * * Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 60 V Gate-to-Source Voltage VGSS 20 V ID 40 A Drain Current (DC) Drain Current (Pulse) IDP PW10s, duty cycle1% 160 A 1.65 W Allowable Power Dissipation PD 50 W Channel Temperature Tch 150 C Storage Temperature Tstg --55 to +150 C Avalanche Enargy (Single Pulse) *1 EAS 60 mJ Avalanche Current *2 IAV 40 A Tc=25C Note : *1 VDD=20V, L=50H, IAV=40A *2 L50H, single pulse Electrical Characteristics at Ta=25C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions Ratings min typ ID=1mA, VGS=0 VDS=60V, VGS=0 VGS= 16V, VDS=0 60 IDSS IGSS VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=20A 1.2 RDS(on)1 RDS(on)2 ID=20A, VGS=10V ID=20A, VGS=4V Unit max V 10 A A 2.6 V 20 26 m 28 40 m 1 16 Marking : K3816 27 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company http://semicon.sanyo.com/en/network TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D2404QA TS IM TB-00000610 No.8054-1/4 2SK3816 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 1780 Output Capacitance 266 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 197 pF Turn-ON Delay Time td(on) See specified Test Circuit. 16.5 ns Rise Time tr td(off) See specified Test Circuit. 160 ns See specified Test Circuit. 160 ns tf See specified Test Circuit. 160 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=30V, VGS=10V, ID=40A 40 nC Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=40A 6.5 nC Gate-to-Drain "Miller" Charge Qgd VDS=30V, VGS=10V, ID=40A 11.5 Diode Forward Voltage VSD IS=40A, VGS=0 1.05 10.2 1.6 9.9 8.8 0.8 0.9 11.5 1.3 4.5 0.4 3 1 : Gate 2 : Drain 3 : Source 3 1.2 2.55 2.7 2 2.7 1 2.55 2 1.35 11.0 9.4 3.0 20.9 1.2 1 0.8 2.55 2.55 2.55 2.55 1.3 1.4 4.5 10.2 0.8 V Package Dimensions unit : mm 2090A 1.5max 8.8 Package Dimensions unit : mm 2093A nC 1.5 0 to 0.3 0.4 1 : Gate 2 : Drain 3 : Source SANYO : SMP-FD SANYO : SMP Switching Time Test Circuit Unclamped Inductive Test Circuit VDD=30V VIN 10V 0V 50 RG ID=20A RL=1.5 VIN D L DUT VOUT PW=10s D.C.1% 15V 0V G 50 VDD 2SK3816 P.G 50 S No.8054-2/4 2SK3816 25 20 15 15 25 75 C 0 0.8 1.0 1.2 1.4 1.6 1.8 Drain-to-Source Voltage, VDS -- V 0 2.0 Static Drain-to-Source On-State Resistance, RDS(on) -- m 60 50 40 30 Tc=75C 20 25C --25C 10 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 10 Forward Current, IF -- A C 25 10 7 = Tc 5 5C --2 C 75 3 2 1.0 7 5 3 0.1 3.5 4.0 4.5 IT07813 4V S= , VG 20A I D= 30 =10V , VGS 20A I D= 20 10 --25 0 25 50 75 100 125 150 IT07815 IF -- VSD VGS=0 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5 7 0 3 1.2 1.5 IT07817 f=1MHz Ciss, Coss, Crss -- pF 3 7 5 tr 3 td(on) 2 0.9 Ciss, Coss, Crss -- VDS 5 tf 100 0.6 Diode Forward Voltage, VSD -- V VDD=30V VGS=10V td(off) 2 0.3 IT07816 SW Time -- ID 5 Ciss 2 1000 7 5 Coss Crss 3 2 10 7 5 0.1 40 100 7 5 3 2 3 2 3.0 Case Temperature, Tc -- C VDS=10V 5 2.5 50 IT07814 yfs -- ID 7 2.0 RDS(on) -- Tc 0 --50 0 3 1.5 60 ID=20A 2 1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 70 0.5 IT07812 --25C 0.6 C 0.4 25C 0.2 Tc=7 5 0 Static Drain-to-Source On-State Resistance, RDS(on) -- m 20 5 0 Forward Transfer Admittance, yfs -- S 25 10 VGS=3V 5 Switching Time, SW Time -- ns 30 Tc =7 5C C 30 --25 Drain Current, ID -- A 35 35 10 Tc= -- 4V C 6V 40 8V Drain Current, ID -- A 40 VDS=10V 25C 10 V 45 ID -- VGS 50 Tc=25C 25 C ID -- VDS 50 100 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 IT07818 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT07819 No.8054-3/4 2SK3816 VGS -- Qg 10 8 7 6 5 4 3 1 3 2 5 10 15 20 25 30 Total Gate Charge, Qg -- nC 40 2 3 5 7 1.0 Allowable Power Dissipation, PD -- W 1.0 0.5 3 5 7 10 2 3 5 7 100 IT07821 PD -- Tc 60 1.5 2 Drain-to-Source Voltage, VDS -- V IT07820 1.65 10 s m DC 100m s s op era tio n Tc=25C Single pulse 0.1 0.1 PD -- Ta 2.0 Allowable Power Dissipation, PD -- W 35 s 1m Operation in this area is limited by RDS(on). 3 2 s 0 ID=40A 10 7 5 2 0 10 10 3 2 1.0 7 5 0 IDP=160A 100 7 5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 ASO 3 2 VDS=30V ID=40A 50 40 30 20 10 0 0 0 20 40 60 80 100 120 Amibient Tamperature, Ta -- C 140 160 IT07811 0 20 40 60 80 100 120 140 Case Tamperature, Tc -- C 160 IT07822 Note on usage : Since the 2SK3816 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2004. Specifications and information herein are subject to change without notice. PS No.8054-4/4