STEMENS AKTIENGESELLSCHAF SIEMENS 47E D MM 8235605 0027371 & MMSIEG SFH 401 SERIES GaAs INFRARED EMITTER TANI Package Dimensions in Inches (mm) 574 {i So 018 0.4) 216 (5. FEATURES * Package: 18 A 3 DIN 41 876 (TO 18), Glass Lens, Hermetically Sealed, Solder Tabs, Lead Spacing 2.54 mm (*h0") * Anode Marking: Tab at Case Bottom * High Reliabllity * Long Life * Very High Radiant Intensity, Narrow Beam * High Putse Power * Two Radiant Intensity Ranges * Same Package as SFH 481 DESCRIPTION The GaAs infrared emitting diode SFH 401, fabricated in a liquid phase epitaxy process, features high efficiency and emits radiation at a wavelength in the nar infrared range. The radiation is activated by de or pulse operation in forward direction; simultaneous modulation is possible. The cathode is electrically connected to the case. The applications include light-reflecting switches for steady and varying intensity, IR-remote control, industrial electronics, measuring and controlling. 487 (475) 181 (4.6) 211 (835) Maximum Ratings Storage and Operating Temperature (Tyg: Typ) cvsssscssessesnsssnesnesreenssnnessessanese Soldering Temperature at Dip Soldering (22 mm distance from case bottom) (t$5 SOC.) (T,) .acceseesscescecesensnteecnteneeteneeanees 260C Soldering Temperature at Iron Soldering (22 mm distance from case bottom) (t< 3 S06.} (Ty) ......cccsoscssessssesescesscnessssesnneneessesannesseentesenseen sections 300C Junction Temperature (T,) 400C PRAVETSO VOIAGE (Va) vecesscssssessssensstsecensonsvensssnnestaneensonnesssvssesnecaneriesseniissatesssenssesnueses 5v Forward Currant (1,) Ty 25C ....-seseesecseeceeceeeeesenseeeeeee cennneereneeeneeene reseneees 300 mA Surge Current (ts 10 ps, D=0) (1,4) 3A Power Dissipation (P_,,) T, = 25C seseatees 470 mW Thenmaal Resistance (Aaya) ecco ssesnsesseeeassseecsescssnrssnpnesssseesseencensesseecerseessons 450 KW Characteristics (T,=25C) Parameter Symbol Unit Wavelength at Peak Emission (l=100 mA, t,=20 ms) roca 850 + 20 nm Spectral Bandwidth at 50% of I... (=100 mA, t, =20 ms) An +55 nin Half Angle 9 15 Deg, Active Chip Area A 0.25 mm Dimensions of Active Chip Area Lx W 05 x05 mm Distance Chip Surface to Casa Surface D 28-37 mm Switching Times (I, from 10% to 90%, and from 90% to 10%, |, = 100 mA} hb 1 ps Capacitance (V,=0 V, f=1 MHz) Cc, 40 pF Forward Voltage (= 100 mA) V. 1.30 (<1.5) Vv (1=1 A, t,.=100 ps) Vv, 1.9 ($2.5) v Breakdown Voltage (1,=10 pA) Van 30 (25) v Reverse Current (V,=5 V) ly 0.01 (s1) pA Temperature Coefficient of |, or , Tc, -0.55 56K Temperature Coefficient of V, Te, -16 mV/K Temperature Coefficient of 4,.,, Te, 03 nmiK Radiant Intensity i, in Axial Direction at a Steradian Q 20.01 sr or 6.5 degrees SFH401-2 SFH401-3 SFH401-4 ([,=100 mA, t,=20 ms) te 10 - 20 16 -32 >25 mWisr (=1 A, t.=100 ps) le 100 120 226 mWisr Radiant Flux (total) (,=100 mA, =20 ms) os 55 7 35 mw 7-22 STEMENS AKTIENGESELLSCHAF H?E D Relative spectral emission versus Wavelength s0 920960 1000 060 10800 e) Forward current versus case temperature Q 20 4 i 80 100 C ic Forward voltage versus ambient temperature 0208 0 30-20-10 0 1 20 30-40 50 60 70 8 90 10 9% +7, Radiant intensity versus forward current 10 le Je tooma 10 19 107 107 107 10 10's =/, Forward currant versus forward voltage A xn 10 10" 1? 10 15 20 25 30 35 40 4&SV e , Radiant intensity versus ambient temperatura 1k ts or Se 10 08 06 04 Oz 0204 0 -0--0 0 0 2 40 50 60 70 80 90 HD _ Ty, T-41-11 7 Radiation charactoristic Relative spectral emission versus half angle Capacitance versus reverse voltage pF 40 40 30 20 Permissible pulse handing capabillty Forward current versus cycle duration (T,=25C, Duty cycle D = parameter) 10 tN a AE TCL we? wo 0? 7-23 SFH 401 MM 862355605 0027372 T MSIEG Infrared Emitters