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HE8807SG/FL
GaAlAs Infrared Emitting Diodes
Description
The HE8807SG/FL are single heterojunction structure GaAlAs light emitting diodes with a wavelength
of 880 nm.
Features
• High output, high efficiency
• Narrow spectral width
• Sharp radiation directivity (HE8807FL)
• Wide radiation directivity (HE8807SG)
• High reliability
Absolute Maximum Ratings (TC = 25°C)
Item Symbol Rated Value Units
Forward current IF200 mA
Reverse voltage VR3 V
Operating temperature Topr –20 to +85 °C
Storage temperature Tstg –40 to +100 °C
HE8807SG/FL
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Optical and Electrical Characteristics (TC = 25°C)
Item Symbol Min Typ Max Units Test Conditions
Optical output power HE8807SG PO10 20 — mW IF = 150 mA
HE8807FL PF*10.5 1.0 — IF = 20 mA
Peak wavelength λp 800 880 900 nm IF = 150 mA
Spectral width ∆λ — 30 — nm IF = 150 mA
Forward voltage VF— 1.7 2.3 V IF = 150 mA
Reverse current IR— — 100 µA VR = 3 V
Capacitance Ct — 10 — pF VR = 0 V, f = 1 MHz
Rise time tr — 20 — ns IF = 50 mA
Fall time tf — 20 — ns IF = 50 mA
Note: 1. PF specification: The optical output within 9 degrees of the acceptance angle.
Typical Characteristic Curves
HE8807SG/FL
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Typical Characteristic Curves (cont)
HE8807SG/FL
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Typical Characteristic Curves (cont)
HE8807SG/FL
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Typical Characteristic Curves (cont)
