CM200TL-24NF Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Six IGBTMODTM NF-Series Module 200 Amperes/1200 Volts Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L M Inches 5.32 4.330.02 3.070.02 4.330.02 0.24 0.69 0.41 1.02 1.92 0.51 0.71 0.46 Millimeters 135.0 110.00.5 78.00.5 110.00.5 6.05 17.5 10.5 26.0 48.75 13.0 18.0 11.7 Housing Types (J.S.T. Mfg. Co. Ltd.) AB - B8P-VH-FB-B AC - B2P-VH-FB-B Dimensions Inches Millimeters N 0.74 18.7 P 0.54 13.75 Q 0.22 5.5 Dia. R 1.20 30.5 S 0.98 25.0 T 1.82 46.3 U 0.43 11.0 V M5 M5 W 0.65 16.5 X 0.78 20.0 Y 1.04 26.5 Z 0.16 4.0 AA 0.95+0.04/-0.02 24.1+1.0/-0.5 Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of six IGBT Transistors in a three phase bridge configuration, with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Photovoltaic/Fuel Cell Ordering Information: Example: Select the complete module number you desire from the table below -i.e. CM200TL-24NF is a 1200V (VCES), 200 Ampere Six-IGBTMODTM Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 200 24 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200TL-24NF Six IGBTMODTM NF-Series Module 200 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25C unless otherwise specified Characteristics Symbol CM200TL-24NF Units Power Device Junction Temperature Tj -40 to 150 C Tstg -40 to 125 C Collector-Emitter Voltage (G-E Short) VCES 1200 Volts Gate-Emitter Voltage (C-E Short) VGES 20 Volts Storage Temperature Collector Current (TC = 72C)* Peak Collector Current (Tj 150C) IC 200 Amperes ICM 400** Amperes Emitter Current*** IE 200 Amperes Peak Emitter Current*** IEM 400** Amperes Maximum Collector Dissipation (TC = 25C, Tj < 150C) PC 1160 Watts Mounting Torque, M5 Mounting Screws -- 31 in-lb Mounting Torque, M5 Main Terminal Screws -- 31 in-lb Module Weight (Typical) -- 750 Grams VISO 2500 Isolation Voltage, AC 1 minute, 60Hz Sinusoidal Volts Electrical and Mechanical Characteristics, Tj = 25C unless otherwise specified Characteristics Collector Cutoff Current Gate-Emitter Threshold Voltage Gate Leakage Current Collector-Emitter Saturation Voltage Symbol Test Conditions Min. Typ. Max. Units ICES VCE = VCES, VGE = 0V -- -- 1.0 mA VGE(th) IC = 20mA, VCE = 10V 6 7 8 Volts IGES VGE = VGES, VCE = 0V -- -- 0.5 A VCE(sat) Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Total Gate Charge QG IC = 200A, VGE = 15V, Tj = 25C -- 2.1 3.1 Volts IC = 200A, VGE = 15V, Tj = 125C -- 2.4 -- Volts -- -- 35.0 nf -- -- 3.0 nf VCE = 10V, VGE = 0V -- -- 0.68 nf VCC = 600V, IC = 200A, VGE = 15V -- 1000 -- nC -- -- 130 ns VCC = 600V, IC = 200A, -- -- 70 ns Inductive Turn-on Delay Time td(on) Load Turn-on Rise Time tr Switch Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, -- -- 400 ns Time Turn-off Fall Time tf RG = 1.6, IE = 200A, -- -- 350 ns Reverse Recovery Time*** trr Inductive Load Switching Operation -- -- 150 ns Reverse Recovery Charge*** Qrr -- 9.0 -- C Emitter-Collector Voltage*** VEC -- -- 3.8 Volts IE = 200A, VGE = 0V *TC, Tf measured point is just under the chips. **Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating. ***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200TL-24NF Six IGBTMODTM NF-Series Module 200 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case* Rth(j-c)Q Per IGBT 1/6 Module -- -- 0.11 C/W Thermal Resistance, Junction to Case* Rth(j-c)D Per FWDi 1/6 Module -- -- 0.17 C/W Rth(c-f) Per 1/6 Module, Thermal Grease Applied -- 0.051 -- C/W 1.6 -- 21 Contact Thermal Resistance External Gate Resistance RG *TC, Tf measured point is just under the chips. 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM200TL-24NF Six IGBTMODTM NF-Series Module 200 Amperes/1200 Volts 4