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BTB04-600SL
®
March 2002 - Ed: 1A
STANDARD 4A TRIAC
The BTB04-600SL 4 quadrants TRIAC is intended
for general purpose applications where high surge
current capability is required, such as lighting,
corded power tools, industrial.
This TRIAC features a gate current capability
sensitivity of 10mA.
DESCRIPTION
A1
A2G
A2
TO-220AB
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (full sine wave) TO-220AB Tc = 105°C 4 A
ITSM Non repetitive surge peak on-state current
(full cycle, Tj initial = 25°C) F=50Hz t=20ms 35 A
F = 60 Hz t = 16.7 ms 38
I2tI
2
t value for fusing tp = 10ms 6 A2s
dI/dt Critical rate of rise of on-state current
IG=2xI
GT,tr≤100 ns Repetitive F = 100Hz 50 A/µs
IGM Peak gate tp = 20µs Tj = 125°C 4 A
PG(AV) Average gate power dissipation Tj = 125°C 0.5 W
Tstg
Tj Storage junction temperature range
Operating junction temperature range -40 to +150
-40 to +125 °C
ABSOLUTE MAXIMUM RATINGS
A1
A2
G
Symbol Value Unit
IT(RMS) 4A
V
DRM /V
RRM 600 V
IGT(Q1) 10 mA
MAIN FEATURES
BTB04-600SL
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Symbol Parameter Value Unit
Rth (j-c) Junction to case (AC) 3 °C/W
Rth (j-a) Junction to ambient 60 °C/W
THERMAL RESISTANCE
Symbol Test conditions Quadrant Value Unit
IGT (1) VD= 12V RL=30ΩI - II - III MAX. 10 mA
IV MAX. 25
VGT VD= 12V RL=30ΩALL MAX. 1.3 V
VGD VD=V
DRM RL= 3.3kΩTj = 125°C ALL MIN. 0.2 V
IH(2) IT= 100mA MAX. 15 mA
ILIG= 1.2IGT I - III - IV MAX. 15 mA
II 25
dV/dt (2) VD= 67% VDRM gate open Tj = 125°C MIN. 75 V/µs
(dV/dt)c (2) (dI/dt)c = 1.8A/ms Tj = 125°C MIN. 10 V/µs
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol Test Conditions Value Unit
VTM (2) ITM = 5A tp = 380µs Tj = 25°C MAX. 1.5 V
VTO (2) Threshold voltage Tj = 125°C MAX. 0.85 V
Rd (2) Dynamic resistance Tj = 125°C MAX. 100 mΩ
IDRM
IRRM
VDRM =V
RRM Tj = 25°C
Tj = 125°C MAX. 5
1µA
mA
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1.
STATIC CHARACTERISTICS
BTB04-600SL
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Part Number Voltage Sensitivity Type Package
BTB04-600SL 600V 10 mA Standard TO-220AB
PRODUCT SELECTOR
BT B 04 - 600 SL
TRIAC SERIES
INSULATION
B: non insulated
CURRENT: 4A
VOLTAGE: 600V
S: SENSITIVITY = 10mA
L: LIGHTING APPLICATION
ORDERING INFORMATION
0
1
2
3
4
5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
IT(RMS)(A)
α=180°
P(W)
180°
αα
Fig. 1: Maximum power dissipation versus RMS
on-state current
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 25 50 75 100 125
Tc(°C)
α=180°
IT(RMS)(A)
Fig. 2: RMS on-state current versus case
temperature.
1.E-03
1.E-02
1.E-01
1.E+00
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
tp(s)
Zth(j-a)
Zth(j-c)
K = [Zth/Rth]
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
1
10
100
012345678910
VTM(V)
Tj=25°C
Tj=125°C
Tj max. :
Vto = 0.85V
Rd = 100 mW
ITM(A)
Fig.4:On-statecharacteristics(maximumvalues)
BTB04-600SL
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0
1
2
3
4
5
6
7
8
25 50 75 100 125
Tj(°C)
(dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C]
Fig. 9: Relative variation of critical rate of decrease
of main current versus junction temperature.
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Tj(°C)
IGT
IH & IL
IGT, IH, IL[Tj] / IGT, IH, IL [Tj = 25°C]
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus junc-
tion temperature (typical values).
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.1 1.0 10.0 100.0
dV/dt (V/µs)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
Fig.8:Relativevariationofcriticalrateofdecrease
of main current versus reapplied dV/dt (typical val-
ues).
0
1
2
3
4
5
6
7
8
25 50 75 100 125
Tj(°C)
VD=VR=400V
dV/dt [Tj] / dV/dt [Tj = 125°C]
Fig. 10: Relative variation of static dV/dt immunity
versus junction temperature.
1
10
100
1000
0.01 0.10 1.00 10.00
tp(ms)
Tj initial=25°C
dI/dt limitation:
50A/µs ITSM
I²t
ITSM(A), I t (A s)
22
Fig. 6: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms, and
corresponding value of I2t.
0
5
10
15
20
25
30
35
40
1 10 100 1000
Number of cycles
Non repetitive
Tj initial=25°C
Repetitive
Tc=110°C
t=20ms
ITSM(A)
Fig. 5: Surgepeakon-statecurrentversus number
of cycles.
BTB04-600SL
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Informationfurnishedisbelievedto be accurate andreliable.However,STMicroelectronicsassumesno responsibility for the consequencesof
useofsuchinformationnorforany infringement of patents or other rights of thirdpartieswhichmayresultfromitsuse.No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All rights reserved.
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Ordering type Marking Package Weight Base qty Packing mode
BTB04-600SL BTB04-600SL TO-220AB 2.3 g 50 Tube
OTHER INFORMATION
PACKAGE MECHANICAL DATA
TO-220AB (Plastic)
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2 F2
F1
E
M
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4 typ. 0.645 typ.
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6 typ. 0.102 typ.
Diam. 3.75 3.85 0.147 0.151
