IPI041N12N3 G
IPP041N12N3 G IPB038N12N3 G
OptiMOSTM3 Power-Transistor
Features
• N-channel, normal level
• Excellent gate charge x RDS(on) product (FOM)
• Very low on-resistance RDS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant, halogen free
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
IDTC=25 °C2) 120 A
TC=100 °C 120
Pulsed drain current3) ID,pulse TC=25 °C 480
Avalanche energy, single pulse
EAS ID=100 A, RGS=25 W900 mJ
Gate source voltage 4) VGS ±20 V
Power dissipation
Ptot TC=25 °C 300 W
Operating and storage temperature
Tj, Tstg -55 ... 175 °C
IEC climatic category; DIN IEC 68-1 55/175/56
Value
VDS
120
V
RDS(on),max (TO-263)
3.8
mW
ID
120
A
Product Summary
Type
IPB038N12N3 G
IPI041N12N3 G
IPP041N12N3 G
Package
PG-TO263-3
PG-TO262-3
PG-TO220-3
Marking
038N12N
041N12N
041N12N
Rev. 2.3 page 1 2014-04-15
IPI041N12N3 G
IPP041N12N3 G IPB038N12N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
RthJC - - 0.5 K/W
Thermal resistance,
RthJA minimal footprint - - 62
junction - ambient
6 cm2 cooling area5) - - 40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=0 V, ID=1 mA 120 - - V
Gate threshold voltage
VGS(th) VDS=VGS, ID=270 µA 2 3 4
Zero gate voltage drain current
IDSS
VDS=100 V, VGS=0 V,
Tj=25 °C
-0.1 1µA
VDS=100 V, VGS=0 V,
Tj=125 °C
-10 100
Gate-source leakage current
IGSS VGS=20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance
RDS(on) VGS=10 V, ID=100 A -3.5 4.1 mW
VGS=10 V, ID=100 A,
TO263
-3.2 3.8
Gate resistance
RG-1.4 -W
Transconductance
gfs
|VDS|>2|ID|RDS(on)max,
ID=100 A
83 165 - S
1)J-STD20 and JESD22
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Values
4) Tjmax=150 °C and duty cycle D=0.01 for Vgs<-5V
2) Current is limited by bondwire; with an RthJC=0.5 K/W the chip is able to carry 182 A.
3) See figure 3
Rev. 2.3 page 2 2014-04-15
IPI041N12N3 G
IPP041N12N3 G IPB038N12N3 G
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
Input capacitance
Ciss -10400 13800 pF
Output capacitance
Coss -1320 1760
Reverse transfer capacitance
Crss -61 -
Turn-on delay time
td(on) -35 -ns
Rise time
tr-52.0 -
Turn-off delay time
td(off) -70 -
Fall time
tf-21 -
Gate Charge Characteristics6)
Gate to source charge
Qgs -52 -nC
Gate to drain charge
Qgd -37 -
Switching charge
Qsw -58 -
Gate charge total
Qg-158 211
Gate plateau voltage
Vplateau -5.0 - V
Output charge
Qoss VDD=60.1 V, VGS=0 V -182 243 nC
Reverse Diode
Diode continous forward current IS- - 120 A
Diode pulse current
IS,pulse - - 480
Diode forward voltage
VSD
VGS=0 V, IF=100 A,
Tj=25 °C
-0.9 1.2 V
Reverse recovery time
trr -123 ns
Reverse recovery charge
Qrr -356 -nC
6) See figure 16 for gate charge parameter definition
VR=60 V, IF=IS,
diF/dt=100 A/µs
TC=25 °C
Values
VGS=0 V, VDS=60 V,
f=1 MHz
VDD=60 V, VGS=10 V,
ID=100 A,
RG,ext=1.6 W
VDD=60.1 V,
ID=100 A,
VGS=0 to 10 V
Rev. 2.3 page 3 2014-04-15
IPI041N12N3 G
IPP041N12N3 G IPB038N12N3 G
1 Power dissipation 2 Drain current
Ptot=f(TC)ID=f(TC); VGS≥10 V
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TC=25 °C; D=0 ZthJC=f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10-1
100
101
102
103
100
101
102
103
ID [A]
VDS [V]
limited by on-state
resistance
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-5
10-4
10-3
10-2
10-1
100
10-3
10-2
10-1
100
ZthJC [K/W]
tp [s]
0
50
100
150
200
250
300
350
0 50 100 150 200
Ptot [W]
TC [°C]
0
20
40
60
80
100
120
140
0 50 100 150 200
ID [A]
TC [°C]
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IPP041N12N3 G IPB038N12N3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
parameter: Tj
4.5 V
5 V
5.5 V
6 V
10 V
2
3
4
5
6
7
8
9
10
0 50 100 150
RDS(on) [mW]
ID [A]
25 °C
175 °C
0
50
100
150
200
250
300
0 2 4 6 8
ID [A]
VGS [V]
0
40
80
120
160
200
0 50 100 150
gfs [S]
ID [A]
4.5 V
5 V
5.5 V
6 V
6.5 V
7 V
10 V
0
80
160
240
320
400
0 1 2 3 4 5
ID [A]
VDS [V]
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9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=100 A; VGS=10 V VGS(th)=f(Tj); VGS=VDS
parameter: ID
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz IF=f(VSD)
parameter: Tj
typ
98 %
0
2
4
6
8
10
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj [°C]
270 µA
2700 µA
0
0.5
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
VGS(th) [V]
Tj [°C]
Ciss
Coss
Crss
101
102
103
104
105
0 20 40 60 80 100
C [pF]
VDS [V]
25 °C
175 °C
25 °C, 98%
175 °C, 98%
100
101
102
103
0 0.5 1 1.5 2
IF [A]
VSD [V]
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IPI041N12N3 G
IPP041N12N3 G IPB038N12N3 G
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 WVGS=f(Qgate); ID=100 A pulsed
parameter: Tj(start) parameter: VDD
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=1 mA
24 V
60 V
96 V
0
2
4
6
8
10
0 50 100 150 200
VGS [V]
Qgate [nC]
100
105
110
115
120
125
130
135
140
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj [°C]
VGS
Qgate
Vgs(th)
Qg(th)
Qgs
Qgd
Qsw
Qg
25 °C
100 °C
150 °C
1
10
100
1000
1 10 100 1000
IAS [A]
tAV [µs]
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IPI041N12N3 G
IPP041N12N3 G IPB038N12N3 G
PG-TO220-3: Outline
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IPI041N12N3 G
IPP041N12N3 G IPB038N12N3 G
Rev. 2.3 page 9 2014-04-15
IPI041N12N3 G
IPP041N12N3 G IPB038N12N3 G
PG-TO-263 (D²-Pak)
Rev. 2.3 page 10 2014-04-15
IPI041N12N3 G
IPP041N12N3 G IPB038N12N3 G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2014.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values
stated herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
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Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
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Rev. 2.3 page 11 2014-04-15
