SiT8008B
Low Power Programmable Oscillator
ow Power, Standard Frequency Oscillator
Features
◼ Any frequency between 1 MHz and 110 MHz accurate to
6 decimal places
◼ 100% pin-to-pin drop-in replacement to quartz-based XO
◼ Excellent total frequency stability as low as ±20 ppm
◼ Operating temperature from -40°C to 85°C. For 125°C and/or
-55°C options, refer to SiT1618, SiT8918, SiT8920
◼ Low power consumption of 3.5 mA typical at 1.8V
◼ Standby mode for longer battery life
◼ Fast startup time of 5 ms
◼ LVCMOS/HCMOS compatible output
◼ Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5,
5.0 x 3.2, 7.0 x 5.0 mm x mm
◼ Instant samples with Time Machine II and field programmable
oscillators
◼ RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
◼ For AEC-Q100 oscillators, refer to SiT8924 and SiT8925
Applications
◼ Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books,
SSD, GPON, EPON, etc
◼ Ideal for high-speed serial protocols such as: USB,
SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc.
Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and nominal supply voltage.
Table 1. Electrical Characteristics
Parameters
Symbol
Min.
Typ.
Max.
Unit
Condition
Frequency Range
Output Frequency Range
f
1
–
110
MHz
Frequency Stability and Aging
Frequency Stability
F_stab
-20
–
+20
ppm
Inclusive of initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply voltage
and load.
-25
–
+25
ppm
-50
–
+50
ppm
Operating Temperature Range
Operating Temperature Range
T_use
-20
–
+70
°C
Extended Commercial
-40
–
+85
°C
Industrial
Supply Voltage and Current Consumption
Supply Voltage
Vdd
1.62
1.8
1.98
V
Contact SiTime for 1.5V support
2.25
2.5
2.75
V
2.52
2.8
3.08
V
2.7
3.0
3.3
V
2.97
3.3
3.63
V
2.25
–
3.63
V
Current Consumption
Idd
–
3.8
4.5
mA
No load condition, f = 20 MHz, Vdd = 2.8V to 3.3V
–
3.7
4.2
mA
No load condition, f = 20 MHz, Vdd = 2.5V
–
3.5
4.1
mA
No load condition, f = 20 MHz, Vdd = 1.8V
OE Disable Current
I_OD
–
–
4.2
mA
Vdd = 2.5V to 3.3V, OE = GND, Output in high-Z state
–
–
4.0
mA
Vdd = 1.8V, OE = GND, Output in high-Z state
Standby Current
I_std
–
2.1
4.3
A
ST = GND, Vdd = 2.8V to 3.3V, Output is weakly pulled down
–
1.1
2.5
A
ST = GND, Vdd = 2.5V, Output is weakly pulled down
–
0.2
1.3
A
ST = GND, Vdd = 1.8V, Output is weakly pulled down
LVCMOS Output Characteristics
Duty Cycle
DC
45
–
55
%
All Vdds. See Duty Cycle definition in Figure 3 and Footnote 6
Rise/Fall Time
Tr, Tf
–
1
2
ns
Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
–
1.3
2.5
ns
Vdd =1.8V, 20% - 80%
–
–
2
ns
Vdd = 2.25V - 3.63V, 20% - 80%
Output High Voltage
VOH
90%
–
–
Vdd
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V) IOH = -2 mA (Vdd = 1.8V)
Output Low Voltage
VOL
–
–
10%
Vdd
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V) IOL = 2 mA (Vdd = 1.8V)
1.05 July 8, 2020
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SiT8008B Low Power Programmable Oscillator
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Page 2 of 17
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Table 1. Electrical Characteristics (continued)
Parameters
Symbol
Min.
Typ.
Max.
Unit
Condition
Input Characteristics
Input High Voltage
VIH
70%
–
–
Vdd
Pin 1, OE or ST
Input Low Voltage
VIL
–
–
30%
Vdd
Pin 1, OE or ST
Input Pull-up Impedance
Z_in
50
87
150
k
Pin 1, OE logic high or logic low, or ST logic high
2
–
–
M
Pin 1, ST logic low
Startup and Resume Timing
Startup Time
T_start
–
–
5
ms
Measured from the time Vdd reaches its rated minimum value
Enable/Disable Time
T_oe
–
–
130
ns
f = 110 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
Resume Time
T_resume
–
–
5
ms
Measured from the time ST pin crosses 50% threshold
Jitter
RMS Period Jitter
T_jitt
–
1.8
3
ps
f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
–
1.8
3
ps
f = 75 MHz, Vdd = 1.8V
Peak-to-peak Period Jitter
T_pk
–
12
25
ps
f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
–
14
30
ps
f = 75 MHz, Vdd = 1.8V
RMS Phase Jitter (random)
T_phj
–
0.5
0.9
ps
f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz
–
1.3
2
ps
f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz
Table 2. Pin Description
Pin
Symbol
Functionality
1
OE/ST/NC
Output Enable
H[1]: specified frequency output
L: output is high impedance. Only output driver is disabled.
Standby
H[1]: specified frequency output
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
No Connect
Any voltage between 0 and Vdd or Open[1]: Specified frequency
output. Pin 1 has no function.
2
GND
Power
Electrical ground
3
OUT
Output
Oscillator output
4
VDD
Power
Power supply voltage[2]
Top View
Figure 1. Pin Assignments
Notes:
1. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.
2. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
1
4
2
3
OE/ST/NC
GND
OUT
VDD
SiT8008B Low Power Programmable Oscillator
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Table 3. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance
of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Min.
Max.
Unit
Storage Temperature
-65
150
°C
Vdd
-0.5
4
V
Electrostatic Discharge
–
2000
V
Soldering Temperature (follow standard Pb free
soldering guidelines)
–
260
°C
Junction Temperature[3]
–
150
°C
Note:
3. Exceeding this temperature for extended period of time may damage the device.
Table 4. Thermal Consideration[4]
Package
JA, 4 Layer Board
(°C/W)
JA, 2 Layer Board
(°C/W)
JC, Bottom
(°C/W)
7050
142
273
30
5032
97
199
24
3225
109
212
27
2520
117
222
26
2016
152
252
36
Note:
4. Refer to JESD51 for JA and JC definitions, and reference layout used to determine the JA and JC values in the above table.
Table 5. Maximum Operating Junction Temperature[5]
Max Operating Temperature (ambient)
Maximum Operating Junction Temperature
70°C
80°C
85°C
95°C
Note:
5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 6. Environmental Compliance
Parameter
Condition/Test Method
Mechanical Shock
MIL-STD-883F, Method 2002
Mechanical Vibration
MIL-STD-883F, Method 2007
Temperature Cycle
JESD22, Method A104
Solderability
MIL-STD-883F, Method 2003
Moisture Sensitivity Level
MSL1 @ 260°C
SiT8008B Low Power Programmable Oscillator
1.05
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HZ
HZ
HZ
Power
Supply
Test Circuit and Waveform[6]
Vdd Vout Test
Point tr
4 3
0.1µF 1 2
15pF
(including probe
and fixture
capacitance)
80% Vdd
50%
20% Vdd
Vdd
OE/ST Function
1k
Note:
Figure 2. Test Circuit Figure 3. Waveform
6. Duty Cycle is computed as Duty Cycle = TH/Period.
Timing Diagrams
Vdd
90% Vdd
T_start
No Glitch
[7]
50% Vdd
ST Voltage
Vdd
T_resume
Pin 4 Voltage
CLK Output
during start up
CLK Output
T_start: Time to start from power-off T_resume: Time to resume from ST
Figure 4. Startup Timing (OE/ST Mode) Figure 5. Standby Resume Timing (ST Mode Only)
50% Vdd
OE Voltage
CLK Output
Vdd
T_oe
Vdd
OE Voltage
CLK Output
50% Vdd
T_oe
T_oe: Time to re-enable the clock output T_oe: Time to put the output in High Z mode
Figure 6. OE Enable Timing (OE Mode Only) Figure 7. OE Disable Timing (OE Mode Only)
Note:
7. SiT8008 has “no runt” pulses and “no glitch” output during startup or resume.
HZ
tf
High Pulse
(TH)
Low Pulse
(TL)
Period
SiT8008B Low Power Programmable Oscillator
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6.0
5.5
5.0
4.5
4.0
3.5
3.0 0 10 20 30 40 50 60 70 80 90 100 110
Frequency (MHz)
20
15
10
5
0
-5
-10
-15
-20
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80
Temperature (°C)
DUT1
DUT6
DUT2
DUT7
DUT3
DUT8
DUT4
DUT9
DUT5
DUT10
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0 0 10 20 30 40 50 60 70 80 90 100 110
Frequency (MHz)
Performance Plots[8]
Figure 8. Idd vs Frequency Figure 9. Frequency vs Temperature
Figure 10. RMS Period Jitter vs Frequency Figure 11. Duty Cycle vs Frequency
Figure 12. 20%-80% Rise Time vs Temperature Figure 13. 20%-80% Fall Time vs Temperature
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
RMS period jitter (ps)
1.8 2.5 2.8 3.0 3.3
Idd (mA)
Frequency (ppm)
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
Du
ty cyc
le
(
%)
55
54
53
52
51
50
49
48
47
46
45 0 10 20 30 40 50 60 70 80 90 100 110
Frequency (MHz)
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
2.5
2.0
1.5
1.0
0.5
0.0
-40
-15
10
35
60
85
Temperature (°C)
Rise
time
(ns)
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
2.5
2.0
1.5
1.0
0.5
0.0
-40
-15
10
35
60
85
Temperature (°C)
Fall
time
(ns)
SiT8008B Low Power Programmable Oscillator
1.05
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Performance Plots[8]
Figure 14. RMS Integrated Phase Jitter Random
(12 kHz to 20 MHz) vs Frequency[9]
Figure 15. RMS Integrated Phase Jitter Random
(900 kHz to 20 MHz) vs Frequency[9]
Notes:
8. All plots are measured with 15 pF load at room temperature, unless otherwise stated.
9. Phase noise plots are measured with Agilent E5052B signal source analyzer. Integration range is up to 5 MHz for carrier frequencies below 40 MHz.
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
2.0
1.8
1.6
1.4
1.2
1.0
10
30
50
70
90
110
Frequency (MHz)
IPJ
(ps)
IPJ
(ps)
1.8 V 2.5 V 2.8 V 3.0 V 3.3 V
0.9
0.8
0.7
0.6
0.5
0.4
10
30
50
70
90
110
Frequency (MHz)
SiT8008B Low Power Programmable Oscillator
1.05
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Programmable Drive Strength
The SiT8008 includes a programmable drive strength
feature to provide a simple, flexible tool to optimize the
clock rise/fall time for specific applications. Benefits from
the programmable drive strength feature are:
◼ Improves system radiated electromagnetic interfer-
ence (EMI) by slowing down the clock rise/fall time.
◼ Improves the downstream clock receiver’s (RX) jitter
by decreasing (speeding up) the clock rise/fall time.
◼ Ability to drive large capacitive loads while maintaining
full swing with sharp edge rates.
For more detailed information about rise/fall time control
and drive strength selection, see the SiTime Application
Notes section.
EMI Reduction by Slowing Rise/Fall Time
Figure 16 shows the harmonic power reduction as the
rise/fall times are increased (slowed down). The rise/fall
times are expressed as a ratio of the clock period. For the
ratio of 0.05, the signal is very close to a square wave. For
the ratio of 0.45, the rise/fall times are very close to near-
triangular waveform. These results, for example, show that
the 11th clock harmonic can be reduced by 35 dB if the
rise/fall edge is increased from 5% of the period to 45% of
the period.
1 3 5 7 9 11
-80
-70
-60
-50
-40
-30
-20
-10
0
10
Harmonic number
Harmonic amplitude (dB)
trise=0.05
trise=0.1
trise=0.15
trise=0.2
trise=0.25
trise=0.3
trise=0.35
trise=0.4
trise=0.45
Jitter Reduction with Faster Rise/Fall Time
Power supply noise can be a source of jitter for the down-
stream chipset. One way to reduce this jitter is to speed up
the rise/fall time of the input clock. Some chipsets may also
require faster rise/fall time in order to reduce their sensitivity
to this type of jitter. Refer to the Rise/Fall Time Tables
(Table 7 to Table 11) to determine the proper drive strength.
High Output Load Capability
The rise/fall time of the input clock varies as a function of
the actual capacitive load the clock drives. At any given
drive strength, the rise/fall time becomes slower as the
output load increases. As an example, for a 3.3V SiT8008
device with default drive strength setting, the typical rise/fall
time is 1 ns for 15 pF output load. The typical rise/fall time
slows down to 2.6 ns when the output load increases to 45 pF.
One can choose to speed up the rise/fall time to 1.83 ns by
then increasing the drive strength setting on the SiT8008.
The SiT8008 can support up to 60 pF or higher in
maximum capacitive loads with drive strength settings.
Refer to the Rise/Fall Time Tables (Table 7 to 11) to
determine the proper drive strength for the desired
combination of output load vs. rise/fall time.
SiT8008 Drive Strength Selection
Tables 7 through 11 define the rise/fall time for a given
capacitive load and supply voltage.
1. Select the table that matches the SiT8008 nominal
supply voltage (1.8V, 2.5V, 2.8V, 3.0V, 3.3V).
2. Select the capacitive load column that matches the
application requirement (5 pF to 60 pF)
3. Under the capacitive load column, select the
desired rise/fall times.
4. The left-most column represents the part number
code for the corresponding drive strength.
5. Add the drive strength code to the part number for
ordering purposes.
Calculating Maximum Frequency
Any given rise/fall time in Table 7 through 11 dictates the
maximum frequency under which the oscillator can operate
with guaranteed full output swing over the entire operating
temperature range. This max frequency can be calculated
as the following:
=1
5 x Trf_20/80
Max Frequency
where Trf_20/80 is the typical value for 20%-80% rise/fall time.
Example 1
Calculate fMAX for the following condition:
◼ Vdd = 1.8V (Table 7)
◼ Capacitive Load: 30 pF
◼ Desired Tr/f time = 3 ns
(rise/fall time part number code = E)
◼ fMAX = 66.666660
Part number for the above example:
Drive strength code is inserted here. Default setting is “-”
Figure 16. Harmonic EMI reduction as a Function
of Slower Rise/Fall Time
SiT8008IE12-18E-66.666660
SiT8008B Low Power Programmable Oscillator
1.05
Page 8 of 17
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Rise/Fall Time (20% to 80%) vs CLOAD Tables
Table 7. Vdd = 1.8V Rise/Fall Times
for Specific CLOAD
Table 8. Vdd = 2.5V Rise/Fall Times
for Specific CLOAD
Table 9. Vdd = 2.8V Rise/Fall Times
for Specific CLOAD
Table 10. Vdd = 3.0V Rise/Fall Times
for Specific CLOAD
Table 11. Vdd = 3.3V Rise/Fall Times
for Specific CLOAD
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L
3.39
6.88
11.63
17.56
23.59
A
1.74
3.50
6.38
8.98
12.19
R
1.16
2.33
4.29
6.04
8.34
B
0.81
1.82
3.22
4.52
6.33
T or "‐": default
0.46
1.00
1.86
2.60
3.84
E
0.33
0.87
1.64
2.30
3.35
U
0.28
0.79
1.46
2.05
2.93
F
0.25
0.72
1.31
1.83
2.61
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L
3.60
7.21
11.97
18.74
24.30
A
1.84
3.71
6.72
9.86
12.68
R
1.22
2.46
4.54
6.76
8.62
B
0.89
1.92
3.39
5.20
6.64
T or "‐": default
0.51
1.00
1.97
3.07
3.90
E
0.38
0.92
1.72
2.71
3.51
U
0.30
0.83
1.55
2.40
3.13
F
0.27
0.76
1.39
2.16
2.85
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L
3.77
7.54
12.28
19.57
25.27
A
1.94
3.90
7.03
10.24
13.34
R
1.29
2.57
4.72
7.01
9.06
B
0.97
2.00
3.54
5.43
6.93
T
0.55
1.12
2.08
3.22
4.08
E or "‐": default
0.44
1.00
1.83
2.82
3.67
U
0.34
0.88
1.64
2.52
3.30
F
0.29
0.81
1.48
2.29
2.99
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L
6.16
11.61
22.00
31.27
39.91
A
3.19
6.35
11.00
16.01
21.52
R
2.11
4.31
7.65
10.77
14.47
B
1.65
3.23
5.79
8.18
11.08
T
0.93
1.91
3.32
4.66
6.48
E
0.78
1.66
2.94
4.09
5.74
U
0.70
1.48
2.64
3.68
5.09
F or "‐": default
0.65
1.30
2.40
3.35
4.56
Rise/Fall Time Typ (ns)
Drive Strength \ CLOAD
5 pF
15 pF
30 pF
45 pF
60 pF
L
4.13
8.25
12.82
21.45
27.79
A
2.11
4.27
7.64
11.20
14.49
R
1.45
2.81
5.16
7.65
9.88
B
1.09
2.20
3.88
5.86
7.57
T
0.62
1.28
2.27
3.51
4.45
E or "‐": default
0.54
1.00
2.01
3.10
4.01
U
0.43
0.96
1.81
2.79
3.65
F
0.34
0.88
1.64
2.54
3.32
SiT8008B Low Power Programmable Oscillator
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Page 9 of 17
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Pin 1 Configuration Options (OE, ST, or NC)
Pin 1 of the SiT8008 can be factory-programmed to support
three modes: Output Enable (OE), standby (ST) or
No Connect (NC). These modes can also be programmed
with the Time Machine using field programmable devices.
Output Enable (OE) Mode
In the OE mode, applying logic Low to the OE pin only
disables the output driver and puts it in Hi-Z mode. The
core of the device continues to operate normally. Power
consumption is reduced due to the inactivity of the output.
When the OE pin is pulled High, the output is typically
enabled in <1 µs.
Standby (ST) Mode
In the ST mode, a device enters into the standby mode
when Pin 1 pulled Low. All internal circuits of the device are
turned off. The current is reduced to a standby current,
typically in the range of a few µA. When ST is pulled High,
the device goes through the “resume” process, which can
take up to 5 ms.
No Connect (NC) Mode
In the NC mode, the device always operates in its normal
mode and outputs the specified frequency regardless of the
logic level on pin 1.
Table 12 below summarizes the key relevant parameters
in the operation of the device in OE, ST, or NC mode.
Table 12. OE vs. ST vs. NC
OE
ST
NC
Active current 20 MHz (max, 1.8V)
4.1 mA
4.1 mA
4.1 mA
OE disable current (max. 1.8V)
4 mA
N/A
N/A
Standby current (typical 1.8V)
N/A
0.6 µA
N/A
OE enable time at 77.76 MHz (max)
138 ns
N/A
N/A
Resume time from standby
(max, all frequency)
N/A
5 ms
N/A
Output driver in OE disable/standby
mode
High Z
weak
pull-down
N/A
Output on Startup and Resume
The SiT8008 comes with gated output. Its clock output is
accurate to the rated frequency stability within the first pulse
from initial device startup or resume from the standby mode.
In addition, the SiT8008 features “no runt” pulses and “no
glitch” output during startup or resume as shown in the
waveform captures in Figure 17 and Figure 18.
Figure 17. Startup Waveform vs. Vdd
Figure 18. Startup Waveform vs. Vdd
(Zoomed-in View of Figure 17)
Instant Samples with Time Machine and
Field Programmable Oscillators
SiTime supports a field programmable version of the SiT8008
low power oscillator for fast prototyping and real time
customization of features. The field programmable devices
(FP devices) are available for all five standard SiT8008
package sizes and can be configured to one’s exact
specification using the Time Machine II, an USB powered
MEMS oscillator programmer.
Customizable Features of the SiT8008 FP Devices Include
◼ Frequency between 1 MHz to 110 MHz
◼ Three frequency stability options, ±20 ppm,
±25 ppm, ±50 ppm
◼ Two operating temperatures, -20 to 70°C or
-40 to 85°C
◼ Six supply voltage options, 1.8V, 2.5V, 2.8V, 3.0V,
3.3V and 2.25 to 3.63V continuous
◼ Output drive strength
◼ OE, ST or NC mode
For more information regarding SiTime’s field
programmable solutions, see Time Machine II and Field
Programmable Oscillators.
SiT8008 is typically factory-programmed per customer
ordering codes for volume delivery.
SiT8008B Low Power Programmable Oscillator
1.05
Page 10 of 17
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Dimensions and Patterns
Package Size – Dimensions (Unit: mm)[10]
Recommended Land Pattern (Unit: mm) [11]
2.0 x 1.6 x 0.75 mm
2.5 x 2.0 x 0.75 mm
2.5 ± 0.05
2.0 ± 0.05
1.1
1.00
0.75
0.5
0.75 ± 0.05
YXXXX
#1
#2
#4#3
#2
#1
#3#4
1.9
1.1
1.0
1.5
3.2 x 2.5 x 0.75 mm
3.2 ± 0.05
2.5 ± 0.05
2.1
0.9
0.7
0.9
0.75 ± 0.05
#1
#2
#4#3
#2
#1
#3#4
YXXXX
2.2
1.9
1.4
1.2
5.0 x 3.2 x 0.75 mm
5.0 ± 0.05
3.2 ± 0.05
2.39
0.8
1.15
1.1
0.75 ± 0.05
#1
#2
#4#3
#2
#1
#3#4
YXXXX
2.54
1.5
1.6
2.2
SiT8008B Low Power Programmable Oscillator
1.05
Page 11 of 17
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Dimensions and Patterns
Package Size – Dimensions (Unit: mm) [10]
Recommended Land Pattern (Unit: mm)[11]
7.0 x 5.0 x 0.90 mm
1.4
1.1
YXXXX
5.0 ± 0.05
0.90 ± 0.10
7.0 ± 0.05 5.08
2.6
2.2
2.0
5.08
3.81
Notes:
10. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of “Y” will depend on the as sembly location of the
device.
11. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
SiT8008B Low Power Programmable Oscillator
1.05
Page 12 of 17
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Ordering Information
The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime
Part Number Generator.
Notes:
12. This option is preliminary and meant for sampling and evaluation purposes only.
Table 13. Ordering Codes for Supported Tape & Reel Packing Method
Device Size
(mm x mm)
16 mm T&R (3ku)
16 mm T&R (1ku)
12 mm T&R (3ku)
12 mm T&R (1ku)
8 mm T&R (3ku)
8 mm T&R (1ku)
2.0 x 1.6
–
–
–
–
D
E
2.5 x 2.0
–
–
–
–
D
E
3.2 x 2.5
–
–
–
–
D
E
5.0 x 3.2
–
–
T
Y
–
–
7.0 x 5.0
T
Y
–
–
–
–
Packing Method
“D”: 8 mm Tape & Reel, 3ku reel
“E”: 8 mm Tape & Reel, 1ku reel
“T”: 12/16 mm Tape & Reel, 3ku reel
“Y”: 12/16 mm Tape & Reel, 1ku reel
Blank for Bulk
Frequency
1.000000 to 110. 000000 MHz
Feature Pin
“E” for Output Enable
“S” for Standby
“N” for No Connect
Supply Voltage
“18” for 1.8V ±10%
“25” for 2.5V ±10%
“28” for 2.8V ±10%
“30” for 3.0V ±10%
“33” for 3.3V ±10%
“XX” for 2.5V -10% to 3.3V +10%
“YY” for 1.8V -10% to 3.3V +10%[12]
Part Family
“SiT8008”
Revision Letter
“B” is the revision
Temperature Range
“C” Commercial, -20ºC to 70ºC
“I” Industrial, -40ºC to 85ºC
Output Drive Strength
“–” Default (datasheet limits)
See Tables 7 to 11 for
rise/fall times
“L” “T”
“A” “E”
“R” “U”
“B” “F”
Package Size
“7” 2.0 x 1.6 mm
“1” 2.5 x 2.0 mm
“2” 3.2 x 2.5 mm
“3” 5.0 x 3.2 mm
“8” 7.0 x 5.0 mm
Frequency Stability
“1” for ±20 ppm
“2” for ±25 ppm
“3” for ±50 ppm
SiT8008BC-12-18E- 6 6.666660D
SiT8008B Low Power Programmable Oscillator
1.05
Page 13 of 17
www.sitime.com
Table 14. Additional Information
Document
Description
Download Link
Time Machine II
MEMS oscillator programmer
http://www.sitime.com/support/time-machine-oscillator-programmer
Field Programmable
Oscillators
Devices that can be programmable in
the field by Time Machine II
http://www.sitime.com/products/field-programmable-oscillators
Manufacturing Notes
Tape & Reel dimension, reflow profile
and other manufacturing related info
http://www.sitime.com/component/docman/doc_download/243-manufacturing-notes-
for-sitime-oscillators
Qualification Reports
RoHS report, reliability reports,
composition reports
http://www.sitime.com/support/quality-and-reliability
Performance Reports
Additional performance data such as
phase noise, current consumption and
jitter for selected frequencies
http://www.sitime.com/support/performance-measurement-report
Termination Techniques
Termination design
recommendations
http://www.sitime.com/support/application-notes
Layout Techniques
Layout recommendations
http://www.sitime.com/support/application-notes
Table 15. Revision History
Revision
Release Date
Change Summary
1.0
06/10/2014
First Production Release
1.01
05/07/2015
Revised the Electrical Characteristics, Timing Diagrams and Performance Plots
Revised 2016 package diagram
1.02
06/18/2015
Added 16 mm T&R information to Table 13
Revised 12 mm T&R information to Table 13
1.03
08/30/2016
Revised part number example in the ordering information
1.04
01/09/2018
Updated logo and company address, other page layout changes
Revised 2520 package land pattern
1.05
7/8/2020
Updated ordering information with “YY” supply voltage option
Updated ordering information with note
SiTime Corporation, 5451 Patrick Henry Drive, Santa Clara, CA 95054, USA | Phone: +1-408-328-4400 | Fax: +1-408-328-4439
© SiTime Corporation 2014-2018. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage
or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect
or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or
(iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress.
Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by
operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or
usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by
SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved
or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below.
CRITICAL USE EXCLUSION POLICY
BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR
FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE.
SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does
not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale
of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly
prohibited.
Rev. 1.04
Page 15 of 17
www.sitime.com
Silicon MEMS Outperforms Quartz
Best Reliability
Silicon is inherently more reliable than quartz. Unlike
quartz suppliers, SiTime has in-house MEMS and analog
CMOS expertise, which allows SiTime to develop the
most reliable products. Figure 1 shows a comparison
with quartz technology.
Why is SiTime Best in Class:
◼ SiTime’s MEMS resonators are vacuum sealed using
an advanced EpiSeal™ process, which eliminates
foreign particles and improves long term aging and
reliability
◼ World-class MEMS and CMOS design expertise
28
38
1,140
EPSN
IDT
SiTime
Reliability (Million Hours)
Figure 1. Reliability Comparison[1]
Best Aging
Unlike quartz, MEMS oscillators have excellent long
term aging performance which is why every new SiTime
product specifies 10-year aging. A comparison is shown
in Figure 2.
Why is SiTime Best in Class:
◼ SiTime’s MEMS resonators are vacuum sealed using
an advanced EpiSeal™ process, which eliminates
foreign particles and improves long term aging and
reliability
◼ Inherently better immunity of electrostatically driven
MEMS resonator
1.5
3.5
3
8
0
2
4
6
8
10
1-Year 10-Year
Aging ( PPM)
MEMS vs. Quartz Aging
EpiSeal MEMS Oscillator Quartz Oscillator
SiTime Oscillator Quartz Oscillator
Figure 2. Aging Comparison[2]
Best Electro Magnetic Susceptibility (EMS)
SiTime’s oscillators in plastic packages are up to 54 times
more immune to external electromagnetic fields than
quartz oscillators as shown in Figure 3.
Why is SiTime Best in Class:
◼ Internal differential architecture for best common
mode noise rejection
◼ Electrostatically driven MEMS resonator is more
immune to EMS
SiTimeSLABKYCA CWEPSN TXC
Figure 3. Electro Magnetic Susceptibility (EMS)[3]
Best Power Supply Noise Rejection
SiTime’s MEMS oscillators are more resilient against noise
on the power supply. A comparison is shown in Figure 4.
Why is SiTime Best in Class:
◼ On-chip regulators and internal differential architecture
for common mode noise rejection
◼ MEMS resonator is paired with advanced analog
CMOS IC
SiTime KYCAEPSN
Figure 4. Power Supply Noise Rejection[4]
Rev. 1.04
Page 16 of 17
www.sitime.com
Silicon MEMS Outperforms Quartz
Best Vibration Robustness
High-vibration environments are all around us. All electronics,
from handheld devices to enterprise servers and storage
systems are subject to vibration. Figure 5 shows a
comparison of vibration robustness.
Why is SiTime Best in Class:
◼ The moving mass of SiTime’s MEMS resonators is
up to 3000 times smaller than quartz
◼ Center-anchored MEMS resonator is the most robust
design
0.0
0.1
1.0
10.0
100.0
10 100 1000
Vibration Sensitivity (ppb/g)
Vibration Frequency (Hz)
TXC EPS CW KYCA SLAB EpiSeal MEMS
SiTimeSLABKYCACWEPSTXC
Figure 5. Vibration Robustness[5]
Best Shock Robustness
SiTime’s oscillators can withstand at least 50,000 g shock.
They all maintain their electrical performance in operation
during shock events. A comparison with quartz devices is
shown in Figure 6.
Why is SiTime Best in Class:
◼ The moving mass of SiTime’s MEMS resonators is
up to 3000 times smaller than quartz
◼ Center-anchored MEMS resonator is the most robust
design
SiTimeSLABKYCA CWEPSN TXC
Figure 6. Shock Robustness[6]
Figure labels:
▪
TXC = TXC
▪
Epson = EPSN
▪
Connor Winfield = CW
▪
Kyocera = KYCA
▪
SiLabs = SLAB
▪
SiTime = EpiSeal MEMS
Rev. 1.04
Page 17 of 17
www.sitime.com
Silicon MEMS Outperforms Quartz
Notes:
1. Data source: Reliability documents of named companies.
2. Data source: SiTime and quartz oscillator devices datasheets.
3. Test conditions for Electro Magnetic Susceptibility (EMS):
▪
According to IEC EN61000-4.3 (Electromagnetic compatibility standard)
▪
Field strength: 3V/m
▪
Radiated signal modulation: AM 1 kHz at 80% depth
▪
Carrier frequency scan: 80 MHz – 1 GHz in 1% steps
▪
Antenna polarization: Vertical
▪
DUT position: Center aligned to antenna
Devices used in this test:
Label
Manufacturer
Part Number
Technology
EpiSeal MEMS
SiTime
SiT9120AC-1D2-33E156.250000
MEMS + PLL
EPSN
Epson
EG-2102CA156.2500M-PHPAL3
Quartz, SAW
TXC
TXC
BB-156.250MBE-T
Quartz, 3rd Overtone
CW
Conner Winfield
P123-156.25M
Quartz, 3rd Overtone
KYCA
AVX Kyocera
KC7050T156.250P30E00
Quartz, SAW
SLAB
SiLab
590AB-BDG
Quartz, 3rd Overtone + PLL
4. 50 mV pk-pk Sinusoidal voltage.
Devices used in this test:
Label
Manufacturer
Part Number
Technology
EpiSeal MEMS
SiTime
SiT8208AI-33-33E-25.000000
MEMS + PLL
NDK
NDK
NZ2523SB-25.6M
Quartz
KYCA
AVX Kyocera
KC2016B25M0C1GE00
Quartz
EPSN
Epson
SG-310SCF-25M0-MB3
Quartz
5. Devices used in this test:
same as EMS test stated in Note 3.
6. Test conditions for shock test:
▪
MIL-STD-883F Method 2002
▪
Condition A: half sine wave shock pulse, 500-g, 1ms
▪
Continuous frequency measurement in 100 μs gate time for 10 seconds
Devices used in this test:
same as EMS test stated in Note 3.
7. Additional data, including setup and detailed results, is available upon request to qualified customer. Please contact productsupport@sitime.com.
