PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
Data Sheet 1 of 11 Rev. 02, 2009-04-01
All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Description
The PTFA192401E and PTFA192401F are 240-watt LDMOS FETs
intended for single- and two-carrier WCDMA and CDMA applications
from 1930 to 1990 MHz. Features include input and output matching,
and thermally-enhanced packages with slotted or earless flanges.
Manufactured with Infineon's advanced LDMOS process, these
devices provide excellent thermal performance and superior
reliability.
PTFA192401E
Package H-36260-2
Thermally-Enhanced High Power RF LDMOS FETs
240 W, 1930 – 1990 MHz
Single-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
PAR = 8.5 dB, 3.84 MHz BW
-70
-65
-60
-55
-50
-45
-40
-35
-30
-25
34 36 38 40 42 44 46 48 50
Average Output Power (dBm)
0
5
10
15
20
25
30
35
Drain Efficiency (%)
Adjacent Channel Power Ratio (dB)
Efficiency
ACPR Low
ACPR Up
PTFA192401F
Package H-37260-2
Features
•Pb-free, RoHS-compliant and thermally-enhanced
packages
•Broadband internal matching
•Typical two-carrier WCDMA performance at
1960 MHz, 30 V
- Average output power = 47.0 dBm
- Linear Gain = 16 dB
- Efficiency = 27.5%
- Intermodulation distortion = –35 dBc
- Adjacent channel power = –41 dBc
•Typical single-carrier WCDMA performance at
1960 MHz, 30 V, 3GPP signal, PAR = 8.5 dB
- Average output power = 49 dBm
- Linear Gain = 16 dB
- Efficiency = 33%
- Adjacent channel power = –33 dBc
•Typical CW performance, 1960 MHz, 30 V
- Output power at P–1dB = 240 W
- Efficiency = 54%
•Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•Excellent thermal stability, low HCI drift
•Capable of handling 5:1 VSWR @ 30 V, 240 W
(CW) output power
*See Infineon distributor for future availability.
Data Sheet 2 of 11 Rev. 02, 2009-04-01
PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 30 V, IDQ = 1.6 A, POUT = 50 W average
ƒ1 = 1955 MHz, ƒ2 = 1965 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain Gps 15 16 —dB
Drain Efficiency ηD25 27 —%
Intermodulation Distortion IMD —–36 –34 dBc
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
VDD = 30 V, IDQ = 1.6 A, POUT = 220 W PEP, ƒ = 1960 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps —15.8 —dB
Drain Efficiency ηD—40 —%
Intermodulation Distortion IMD —–28 —dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
Drain Leakage Current VDS = 63 V, VGS = 0 V IDSS — — 10.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) —0.03 —Ω
Operating Gate Voltage VDS = 30 V, IDQ = 1.6 A VGS 2.0 2.5 3.0 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –0.5 to +12 V
Junction Temperature TJ200 °C
Total Device Dissipation PD761 W
Above 25°C derate by 4.35 W/°C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C, 50 W WCDMA) RθJC 0.23 °C/W
Data Sheet 3 of 11 Rev. 02, 2009-04-01
PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
Intermodulation Distortion Products v. Output Power
VDD = 30 V, IDQ = 1600 mA,
ƒ1 = 1957.5 MHz, ƒ2 = 1962.5 MHz
-60
-50
-40
-30
-20
10 100 1000
Output Power, PEP (W)
IM5
IM7
Intermodulation Distortion (dBc)
IM3
Up
Low
Broadband Performance
VDD = 30 V, IDQ = 1600 mA, POUT = 50 W
10
15
20
25
30
35
40
1860 1890 1920 1950 1980 2010 2040
Frequency (MHz)
Gain (dB), Efficiency (%)
-35
-30
-25
-20
-15
-10
-5
Input Return Loss (dB)
Gain
Efficiency
Input Return Loss
Ordering Information
Type and Version Package Type Package Description Marking
PTFA192401E V4 H-36260-2 Thermally-enhanced slotted flange, single-ended PTFA192401E
PTFA192401F V4 H-37260-2 Thermally-enhanced earless flange, single-ended PTFA192401F
Typical Performance (data taken in a production test fixture)
*See Infineon distributor for future availability.
Data Sheet 4 of 11 Rev. 02, 2009-04-01
PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
Two-carrier WCDMA at Selected Biases
VDD = 30 V, ƒ = 1960 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing, series show IDQ
-55
-50
-45
-40
-35
-30
34 36 38 40 42 44 46
Output Power, PEP (dBm)
3rd Order IMD (dBc)
1.6 A
1.4 A
2.0 A
1.8 A
2.2 A
Typical Performance (cont.)
Two-carrier WCDMA Drive-up
VDD = 30 V, IDQ = 1600 mA, ƒ = 1960 MHz, 3GPP
WCDMA signal, PAR = 8 dB, 10 MHz carrier spacing
-60
-55
-50
-45
-40
-35
-30
-25
34 36 38 40 42 44 46 48
Output Power, avg. (dBm)
IM3 (dBc), ACPR (dBc)
0
5
10
15
20
25
30
Drain Efficiency (%)
ACPR
IM3
Efficiency
Power Sweep, CW Conditions
VDD = 30 V, IDQ = 1600 mA, ƒ = 1990 MHz
12
13
14
15
16
17
0 40 80 120 160 200 240
Output Power (W)
Gain (dB)
15
25
35
45
55
65
Drain Efficiency (%)
Efficiency
TCASE = 25°C
TCASE = 90°C
Gain
Intermodulation Distortion Products
vs. Tone Spacing
VDD = 30 V IDQ = 1800 mA , ƒ = 1960 MHz,
POUT = 53 dBm PEP
-55
-50
-45
-40
-35
-30
-25
-20
0 5 10 15 20 25 30 35 40
Tone Spacing (MHz)
Intermodulation Distortion (dBc)
3rd Order
5th
7th
Data Sheet 5 of 11 Rev. 02, 2009-04-01
PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Gain vs. Power Sweep (CW)
over Temperature
VDD = 30 V, IDQ = 1500 mA, ƒ = 1990 MHz
12
13
14
15
16
17
18
1 10 100 1000
Output Power (W)
Power Gain (dB)
-15C
25C
85C
Two-tone Drive-up
VDD = 30 V, IDQ = 1600 mA,
ƒ = 1960 MHz, tone spacing = 1 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
42 44 46 48 50 52 54 56
Output Power, PEP (dBm)
10
15
20
25
30
35
40
45
Drain Efficiency (%)
IM5
IM7
Intermodulation Distortion (dBc)
IM3
Output Peak-to-Average Ratio Compression
(PARC) at various Power levels
VDD = 30 V, IDQ = 1600 mA, ƒ = 1990 MHz,
single-carrier WCDMA input PAR = 7.5 dB
0.001
0.01
0.1
1
10
100
12345678
Peak-to-Average (dB)
Probability (%)
52 dBm
51.0 dBm
50 dBm
48 dBm
46 dBm
Input
Voltage Sweep
IDQ
= 1600 mA, ƒ = 1960 MHz, tone spacing = 1 MHz,
Output Power (PEP) = 53 dBm
-50
-40
-30
-20
-10
23 25 27 29 31 33
Supply Voltage (V)
3rd Order Intermodulation
Distortion (dBc)
10
20
30
40
50
Gain
Efficiency
IM3 Up
Gain (dB), Drain Efficiency (%)
Data Sheet 6 of 11 Rev. 02, 2009-04-01
PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
Z Source Z Load
G
S
D
Frequency Z Source ΩZ Load Ω
MHz RjX RjX
1900 8.43 –8.22 0.80 3.26
1930 8.00 –7.86 0.78 3.56
1960 7.57 –7.51 0.76 3.84
1990 7.19 –7.17 0.73 4.12
2020 6.86 –6.77 0.72 4.38
Broadband Circuit Impedance
0.1
0.3
0.2
0.1
0.2
0.1
0
.2
D
G
E
N
E
R
A
T
O
R
-
-
-
>
<-
--
W
AV
E
LE
N
G
TH
S
T
O
W
AR
D
L
OA
D
-
0
.0
Z Load
Z Source
1900 MHz
2020 MHz
1900 MHz
2020 MHz
Z0 = 50 Ω
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 020 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
13.22 A
16.52 A
Typical Performance (cont.)
Data Sheet 7 of 11 Rev. 02, 2009-04-01
PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
Reference Circuit
Reference circuit schematic for ƒ = 1960 MHz
Circuit Assembly Information
DUT PTFA192401E or PTFA192401F LDMOS Transistor
PCB 0.76 mm [.030"] thick, RF35, εr = 3.48 Rogers RO4350 1 oz. copper
Microstrip Electrical Characteristics at 1960 MHz Dimensions: L x W ( mm) Dimensions: L x W (in.)
l10.038 λ, 50.0 Ω3.51 x 1.70 0.138 x 0.067
l20.071 λ, 50.0 Ω6.60 x 1.70 0.260 x 0.067
l30.022 λ, 43.1 Ω2.01 x 2.16 0.079 x 0.085
l40.060 λ, 43.1 Ω / 6.9 Ω5.28 x 2.16 / 20.32 0.208 x 0.085 / 0.800
l50.040 λ, 6.9 Ω3.33 x 20.32 0.131 x 0.800
l60.026 λ, 6.9 Ω2.21 x 20.32 0.087 x 0.800
l7, l8 0.123 λ, 59.9 Ω11.48 x 1.24 0.452 x 0.049
l90.010 λ, 5.0 Ω0.84 x 28.91 0.033 x 1.138
l10, l12 0.027 λ, 51.0 Ω2.54 x 1.65 0.100 x 0.065
l11, l13 0.228 λ, 51.0 Ω21.03 x 1.65 0.828 x 0.065
l14, l15 0.028 λ, 5.0 Ω2.36 x 28.91 0.093 x 1.138
l16 0.011 λ, 5.0 Ω / 6.0 Ω0.89 x 28.91 / 23.65 0.035 x 1.138 / 0.931
l17 0.030 λ, 6.0 Ω / 12.3 Ω2.54 x 23.65 / 10.67 0.100 x 0.931/ 0.420
l18 0.019 λ, 12.3 Ω / 41.2 Ω1.78 x 10.67 / 2.29 0.070 x 0.420 / 0.090
l19 0.033 λ, 41.2 Ω3.05 x 2.29 0.120 x 0.090
l20 0.096 λ, 50.0 Ω8.99 x 1.70 0.354 x 0.067
C3
0.001µF
C2
0.001µF
Q1
BCP56
R2
1.3K V
QQ1
LM7805
C1
0.001µF
VDD
R1
1.2K V
R3
2K V
R5
2K V
R8
2K V
C7
10pF
l7
J2
C4
4.7µF
16V
C5
0.1µF
R6
5.1K V
C6
10pF
C33
10pF
C18
10pF
C20
1µF
C19
1µF
C23
10µF
50V
C21
2.2µF
C22
0.1µF
C16
10µF
50V
l2l3l4l6
l5
l8
C8
4.7µF
16V
C9
0.1µF
C10
10pF
R7
5.1K V
l20
C17
100µF
50V
C24
100µF
50V
l1
J1
VDD
DUT
l19
C32
0.6pF
C27
0.5pF
C26
0.3pF
l9
l13
l12
l14 l15
C29
0.7pF
l16 l17
L2
l18
C31
0.7pF
l10
l11
C12
1µF
C11
10pF
C25
0.3pF
C14
2.2µF
C28
0.7pF
C13
1µF
C15
0.1µF
C30
0.7pF
L1
Data Sheet 8 of 11 Rev. 02, 2009-04-01
PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
VDD
GND
V66100-G9258-D301-01-7631.dwg
Reference Circuit (cont.)
Reference circuit assembly diagram* (not to scale)
Component Description Suggested Manufacturer P/N or Comment
C1, C2, C3 Capacitor, 0.001 µF Digi-Key PCC1772CT-ND
C4, C8 Capacitor, 4.7 µF, 16V Digi-Key PCS3475CT-ND
C5, C9, C15, C22 Capacitor, 0.1 µF Digi-Key PCC104BCT-ND
C6, C10 Ceramic capacitor, 10 pF ATC 100A 100
C7, C33 Ceramic capacitor, 10 pF ATC 100B 100
C11, C18 Capacitor, 10 pF AVX 08051J100GBTTR
C12, C13, C19, C20 Ceramic capacitor, 1 µF Digi-Key 445-1411-1-ND
C14, C21 Capacitor, 2.2 µF Digi-Key 445-1447-2-ND
C16, C23 Tantalum capacitor, 10 µF, 50 V Garrett Electronics TPSE106K050R0400
C17, C24 Electrolytic capacitor, 100 µF, 50 VDigi-Key P5571-ND
C25, C26 Capacitor, 0.3 pF AVX 08051J0R3BBTTR
C27 Capacitor, 0.5 pF AVX 08051J0R5BBTTR
C28, C29, C30, C31 Capacitor, 0.7 pF AVX 08051J0R7BBTTR
C32 Capacitor, 0.6 pF ATC 600S0R6BT
L1, L2 Ferrite, 8.9mm Elna Magnetics BDS 4.6/3/8.9-4S2
Q1 Transistor Infineon Technologies BCP56
QQ1 Voltage regulator National Semiconductor LM7805
R1 Chip resistor 1.2k ohms Digi-Key P1.2KGCT-ND
R2 Chip resistor 1.3k ohms Digi-Key P1.3KGCT-ND
R3, R5 Chip resistor 2k ohms Digi-Key P2KECT-ND
R4 Chip resistor 10 ohms Digi-Key P10ECT-ND
R6, R7 Chip resistor 5.1k ohms Digi-Key P5.1KECT-ND
R8 Potentiometer 2k ohms Digi-Key 3224W-202ETR-ND
*Gerber files for this circuit available on request
Data Sheet 9 of 11 Rev. 02, 2009-04-01
PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-36260-2
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Pins: D = drain, S = source, G = gate.
3. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
4. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
5. All tolerances ± 0.127 [.005] unless specified otherwise.
6. Primary dimensions are mm. Alternate dimensions are inches.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
C66065-A2324-C001-01-0027
Data Sheet 10 of 11 Rev. 02, 2009-04-01
PTFA192401E
PTFA192401F
Confidential, Limited Internal Distribution
Package Outline Specifications (cont.)
Package H-37260-2
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Pins: D = drain, S = source, G = gate.
3. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
4. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
5. All tolerances ± 0.127 [.005] unless specified otherwise.
6. Primary dimensions are mm. Alternate dimensions are inches.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
C66065-A2325-C001-01-0027
Data Sheet 11 of 11 Rev. 02, 2009-04-01
PTFA192401E/F
Confidential, Limited Internal Distribution
Revision History: 2009-04-01 Data Sheet
Previous Version: 2008-10-06
Page Subjects (major changes since last revision)
9, 10 Update package information
GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2009-04-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
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Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
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