MC33153DR2 - ON Semiconductor

November, 2011 − Rev. 7

1Publication Order Number:

MC33153/D

MC33153

Single IGBT Gate Driver

The MC33153 is specifically designed as an IGBT driver for high

power applications that include ac induction motor control, brushless

dc motor control and uninterruptable power supplies. Although

designed for driving discrete and module IGBTs, this device offers a

cost effective solution for driving power MOSFETs and Bipolar

Transistors. Device protection features include the choice of

desaturation or overcurrent sensing and undervoltage detection. These

devices are available in dual−in−line and surface mount packages.

Features

•High Current Output Stage: 1.0 A Source/2.0 A Sink

•Protection Circuits for Both Conventional and Sense IGBTs

•Programmable Fault Blanking Time

•Protection against Overcurrent and Short Circuit

•Undervoltage Lockout Optimized for IGBT’s

•Negative Gate Drive Capability

•Cost Effectively Drives Power MOSFETs and Bipolar Transistors

•This is a Pb−Free and Halide−Free Device

Figure 1. Representative Block Diagram

This device contains 133 active transistors.

Short Circuit

Latch

Overcurrent

Latch

Fault

Output

QRCurrent

Sense

Input

Kelvin

GND

Fault

Blanking/

Desaturation

Input

Drive

Output

Short Circuit

Comparator

Overcurrent

Comparator

Fault Blanking/

Desaturation

Comparator

Under

Voltage

Lockout

Input

VEE

VCC

VEE

VCC

VEE

VCC

VEE

VCC

VEE

VCC

4 5

130 mV

65 mV

270 mA

6.5 V

Output

Stage

12 V/

11 V

100 k

PDIP−8

P SUFFIX

CASE 626

See detailed ordering and shipping information in the package

dimensions section on page 12 of this data sheet.

ORDERING INFORMATION

MARKING

DIAGRAMS

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SOIC−8

D SUFFIX

CASE 751

PIN CONNECTIONS

MC33153P

YYWWG

AWL

33153

ALYW

A = Assembly Location

L, WL = Wafer Lot

Y, YY = Year

W, WW = Work Week

G or G = Pb−Free Package

(Note: Microdot may be in either location)

(Top View)

Current Sense

Input

Kelvin GND

VEE

Input

Fault Blanking/

Desaturation Input

Drive Output

Fault Output

VCC

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MAXIMUM RATINGS

Rating Symbol Value Unit

Power Supply Voltage VCC to VEE

Kelvin Ground to VEE (Note 1)

VCC − VEE

KGND − VEE

20 V

Logic Input Vin VEE −0.3 to VCC V

Current Sense Input VS−0.3 to VCC V

Blanking/Desaturation Input VBD −0.3 to VCC V

Gate Drive Output

Source Current

Sink Current

Diode Clamp Current

IO1.0

2.0

1.0

Fault Output

Source Current

Sink Current

IFO 25

Power Dissipation and Thermal Characteristics

D Suffix SO−8 Package, Case 751

Maximum Power Dissipation @ TA = 50°C

Thermal Resistance, Junction−to−Air

P Suffix DIP−8 Package, Case 626

Maximum Power Dissipation @ TA = 50°C

Thermal Resistance, Junction−to−Air

RqJA

0.56

180

1.0

100

°C/W

Operating Junction Temperature TJ+150 °C

Operating Ambient Temperature TA−40 to +105 °C

Storage Temperature Range Tstg −65 to +150 °C

Electrostatic Discharge Sensitivity (ESD) (Note 2)

Human Body Model (HBM)

Machine Model (MM)

Charged Device Model (CDM)

ESD

2500

250

1500

NOTE: ESD data available upon request.

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. Kelvin Ground must always be between VEE and VCC.

2. ESD protection per JEDEC Standard JESD22−A114−F for HBM

per JEDEC Standard JESD22−A115−A for MM

per JEDEC Standard JESD22−C101D for CDM.

ELECTRICAL CHARACTERISTICS (VCC = 15 V, VEE = 0 V, Kelvin GND connected to VEE. For typical values TA = 25°C,

for min/max values TA is the operating ambient temperature range that applies (Note 3), unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit

LOGIC INPUT

Input Threshold Voltage

High State (Logic 1)

Low State (Logic 0)

VIH

VIL

−

1.2

2.70

2.30

3.2

−

Input Current

High State (VIH = 3.0 V)

Low State (VIL = 1.2 V)

IIH

IIL

−

130

500

100

DRIVE OUTPUT

Output Voltage

Low State (ISink = 1.0 A)

High State (ISource = 500 mA)

VOL

VOH

−

2.0

13.9

2.5

−

Output Pull−Down Resistor RPD −100 200 kW

FAULT OUTPUT

Output Voltage

Low State (ISink = 5.0 mA)

High State (ISource = 20 mA)

VFL

VFH

−

0.2

13.3

1.0

−

3. Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.

Tlow = −40°C for MC33153 Thigh = +105°C for MC33153

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ELECTRICAL CHARACTERISTICS (continued) (VCC = 15 V, VEE = 0 V, Kelvin GND connected to VEE. For typical values TA = 25°C,

for min/max values TA is the operating ambient temperature range that applies (Note 4), unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit

SWITCHING CHARACTERISTICS

Propagation Delay (50% Input to 50% Output CL = 1.0 nF)

Logic Input to Drive Output Rise

Logic Input to Drive Output Fall

tPLH(in/out)

tPHL (in/out)

−

120

300

Drive Output Rise Time (10% to 90%) CL = 1.0 nF tr−17 55 ns

Drive Output Fall Time (90% to 10%) CL = 1.0 nF tf−17 55 ns

Propagation Delay Current Sense Input to Drive Output

Fault Blanking/Desaturation Input to Drive Output

tP(OC)

tP(FLT)

−0.3 1.0 ms

UVLO

Startup Voltage VCC start 11.3 12 12.6 V

Disable Voltage VCC dis 10.4 11 11.7 V

COMPARATORS

Overcurrent Threshold Voltage (VPin8 > 7.0 V) VSOC 50 65 80 mV

Short Circuit Threshold Voltage (VPin8 > 7.0 V) VSSC 100 130 160 mV

Fault Blanking/Desaturation Threshold (VPin1 > 100 mV) Vth(FLT) 6.0 6.5 7.0 V

Current Sense Input Current (VSI = 0 V) ISI − −1.4 −10 mA

FAULT BLANKING/DESATURATION INPUT

Current Source (VPin8 = 0 V, VPin4 = 0 V) Ichg −200 −270 −300 mA

Discharge Current (VPin8 = 15 V, VPin4 = 5.0 V) Idschg 1.0 2.5 −mA

TOTAL DEVICE

Power Supply Current

Standby (VPin 4 = VCC, Output Open)

Operating (CL = 1.0 nF, f = 20 kHz)

ICC

−

7.2

7.9

4. Low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible.

Tlow = −40°C for MC33153 Thigh = +105°C for MC33153

1.5

VO, OUTPUT VOLTAGE (V)

Vin, INPUT VOLTAGE (V)

Iin, INPUT CURRENT (mA)

Figure 2. Input Current versus Input Voltage

Vin, INPUT VOLTAGE (V)

Figure 3. Output Voltage versus Input Voltage

VCC = 15 V

TA = 25°C

VCC = 15 V

TA = 25°C

1.0

0.5

02.0 4.0 6.0 8.0 10 12 14 16

8.0

6.0

4.0

2.0

01.0 2.0 3.0 4.0 5.0

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VOH , DRIVE OUTPUT HIGH STATE VOLTAGE (V)

15.0

2.0

2.8

-60

14.0

-60

2.5

-60

3.2

ISource, OUTPUT SOURCE CURRENT (A)

VCC = 15 V

TA = 25°C

ISink, OUTPUT SINK CURRENT (A)

TA = 25°C

VCC = 15 V

VCC, SUPPLY VOLTAGE (V)

TA, AMBIENT TEMPERATURE (°C)

VCC = 15 V

ISource = 500 mA

VOL, OUTPUT LOW STATE VOLTAGE (V)

TA, AMBIENT TEMPERATURE (°C)

ISink = 1.0 A

Figure 4. Input Threshold Voltage

versus Temperature

TA, AMBIENT TEMPERATURE (°C)

Figure 5. Input Threshold Voltage

versus Supply Voltage

Figure 6. Drive Output Low State Voltage

versus Temperature

Figure 7. Drive Output Low State Voltage

versus Sink Current

Figure 8. Drive Output High State Voltage

versus Temperature

Figure 9. Drive Output High State Voltage

versus Source Current

TA = 25°C

VCC = 15 V

VIH

VIL

VIH

VIL

- VIL, INPUT THRESHOLD VOLTAGE (V)VIH

VOL, OUTPUT LOW STATE VOLTAGE (V)

= 500 mA

= 250 mA

VCC = 15 V

3.0

2.8

2.6

2.4

2.2

2.0 -40 -20 0 20 40 60 80 100 120 140

2.7

2.6

2.5

2.4

2.3

2.2

13 14 15 16 17 18 19 20

2.0

1.5

1.0

0.5

-40 -20 0 20 40 60 80 100 120 140

1.6

1.2

0.8

00.2 0.4 0.6 0.8 1.0

-40 -20 0 20 40 60 80 100 120 140

13.9

13.8

13.7

13.6

13.5

14.6

14.2

13.8

13.0 0.1 0.2 0.3 0.4 0.5

0.4

13.4

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VSSC, SHORT CIRCUIT THRESHOLD VOLTAGE (mV) VSOC, OVERCURRENT THRESHOLD VOLTAGE (mV)

135

100

-60

135

-60

VCC, SUPPLY VOLTAGE (V)

TA = 25°C

VCC, SUPPLY VOLTAGE (V)

TA = 25°C

VPin 7, FAULT OUTPUT VOLTAGE (V)

VPin 1, CURRENT SENSE INPUT VOLTAGE (mV)

VSSC, SHORT CIRCUIT THRESHOLD VOLTAGE (mV)

TA, AMBIENT TEMPERATURE (°C)

VCC = 15 V

VSOC, OVERCURRENT THRESHOLD VOLTAGE (mV)

TA, AMBIENT TEMPERATURE (°C)

VCC = 15 V

VO, DRIVE OUTPUT VOLTAGE (V)

Figure 10. Drive Output Voltage

versus Current Sense Input Voltage

VPin 1, CURRENT SENSE INPUT VOLTAGE (mV)

Figure 11. Fault Output Voltage

versus Current Sense Input Voltage

Figure 12. Overcurrent Protection Threshold

Voltage versus Temperature

Figure 13. Overcurrent Protection Threshold

Voltage versus Supply Voltage

Figure 14. Short Circuit Comparator Threshold

Voltage versus Temperature

Figure 15. Short Circuit Comparator Threshold

Voltage versus Supply Voltage

VCC = 15 V

VPin 4 = 0 V

VPin 8 > 7.0 V

TA = 25°C

VCC = 15 V

VPin 4 = 0 V

VPin 8 > 7.0 V

TA = 25°C

8.0

6.0

4.0

2.0

055 60 65 70 75 80

8.0

6.0

4.0

2.0

0110 120 130 140 150 16

60 -40 -20 0 20 40 60 80 100 120 140

60 14 16 18 20

130

125 -40 -20 0 20 40 60 80 100 120 140 14 16 18 20

130

125

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, CURRENT SOURCE ( A)Ichg μ

, CURRENT SOURCE ( A)

VBDT, FAULT BLANKING/DESATURATION

5.0

-200

6.6

6.0

-60

-200

-60

6.6

VCC, SUPPLY VOLTAGE (V)

VPin 4 = 0 V

VPin 8 = 0 V

TA = 25°C

VCC, SUPPLY VOLTAGE (V)

VPin 4 = 0 V

VPin 1 > 100 mV

TA = 25°C

VO, DRIVE OUTPUT VOLTAGE (V)

VPin 8, FAULT BLANKING/DESATURATION INPUT VOLTAGE (V)

VCC = 15 V

VPin 4 = 0 V

VPin 1 > 100 mV

TA = 25°C

Ichg μ

TA, AMBIENT TEMPERATURE (°C)

VCC = 15 V

VPin 8 = 0 V

VBDT, FAULT BLANKING/DESATURATION

TA, AMBIENT TEMPERATURE (°C)

VCC = 15 V

VPin 4 = 0 V

VPin 1 > 100 mV

ISI, CURRENT SENSE INPUT CURRENT ( A

)

Figure 16. Current Sense Input Current

versus Voltage

VPin 1, CURRENT SENSE INPUT VOLTAGE (V)

Figure 17. Drive Output Voltage versus Fault

Blanking/Desaturation Input Voltage

VCC = 15 V

TA = 25°C

Figure 18. Fault Blanking/Desaturation Comparator

Threshold Voltage versus Temperature

Figure 19. Fault Blanking/Desaturation Comparator

Threshold Voltage versus Supply Voltage

Figure 20. Fault Blanking/Desaturation Current

Source versus Temperature

Figure 21. Fault Blanking/Desaturation Current

Source versus Supply Voltage

THRESHOLD VOLTAGE (V)

8.0

6.0

4.0

2.0

06.2 6.4 6.6 6.8 7.0

-0.5

-1.0

-1.5 4.0 6.0 8.0 10 12 14 162.0

6.5

6.4 -20 0 20 40 60 80 100 120 140-40

6.5

6.4 14 16 18 20

-220

-240

-260

-280

-300 -20 0 20 40 60 80 100 120 140-40 15 2010

-220

-240

-260

-280

-300

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, DISCHARGE CURRENT (mA)Idscg

-60

12.5

14.0

2.5

1.0

-200

Vth(UVLO), UNDERVOLTAGE

TA, AMBIENT TEMPERATURE (°C)

Startup Threshold

VCC Increasing

ISource, OUTPUT SOURCE CURRENT (mA)

VCC = 15 V

VPin 4 = 0 V

VPin 1 = 1.0 V

Pin 8 = Open

TA = 25°C

VPin 8, FAULT BLANKING/DESATURATION INPUT VOLTAGE (V)

VO, DRIVE OUTPUT VOLTAGE (V)

VCC, SUPPLY VOLTAGE (V)

VPin 4 = 0 V

TA = 25°C

VPin 7, FAULT OUTPUT VOLTAGE (V)

ISink, OUTPUT SINK CURRENT (mA)

VCC = 15 V

VPin 4 = 5.0 V

TA = 25°C

Figure 22. Fault Blanking/Desaturation

Current Source versus Input Voltage

VPin 8, FAULT BLANKING/DESATURATION INPUT VOLTAGE (V)

Figure 23. Fault Blanking/Desaturation Discharge

Current versus Input Voltage

VCC = 15 V

VPin 4 = 0 V

TA = 25°C

Figure 24. Fault Output Low State Voltage

versus Sink Current

Figure 25. Fault Output High State Voltage

versus Source Current

Figure 26. Drive Output Voltage

versus Supply Voltage

Figure 27. UVLO Thresholds

versus Temperature

, CURRENT SOURCE ( A)Ichg μ

VCC = 15 V

VPin 4 = 5.0 V

TA = 25°C

VPin 7, FAULT OUTPUT VOLTAGE (V)

Turn-Off

Threshold

Startup

Threshold

Turn-Off Threshold

VCC Decreasing

LOCKOUT THRESHOLD (V)

13.8

13.6

13.4

13.2

4.0 6.0 8.0 10 12 14 16 18 202.0

13.0

-220

-240

-260

-280

-300 4.0 6.0 8.0 10 12 14 162.0 4.0 8.0 12 16

2.0

1.5

1.0

0.5

-0.5

0.8

0.6

0.4

0.2

02.0 4.0 6.0 8.0 10

11 12 13 14 15

8.0

6.0

4.0

2.0

12.0

11.5

11.0

10.5 -20 20 60 100 140-40 0 40 80 120

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-60

1.0

5.0

TA, AMBIENT TEMPERATURE (°C)

VCC = 15 V

VPin 4 = VCC

Drive Output Open

f, INPUT FREQUENCY (kHz)

VCC = 15 V

TA = 25°C

ICC, SUPPLY CURRENT (mA)

Figure 28. Supply Current versus

Supply Voltage

VCC, SUPPLY VOLTAGE (V)

Figure 29. Supply Current versus Temperature

Output High

Figure 30. Supply Current versus Input Frequency

Output Low

TA = 25°C

ICC, SUPPLY CURRENT (mA)

CL = 10 nF

= 5.0 nF

= 2.0 nF

= 1.0 nF

ICC, SUPPLY CURRENT (mA)

8.0

6.0

4.0

2.0

0 20 40 60 80 100 120 14020 -20

0-4010 15

8.0

6.0

4.0

2.0

100010 100

OPERATING DESCRIPTION

GATE DRIVE

Controlling Switching Times

The most important design aspect of an IGBT gate drive

is optimization of the switching characteristics. The

switching characteristics are especially important in motor

control applications in which PWM transistors are used in a

bridge configuration. In these applications, the gate drive

circuit components should be selected to optimize turn−on,

turn−off and off−state impedance. A single resistor may be

used to control both turn−on and turn−off as shown in

Figure 31. However, the resistor value selected must be a

compromise in turn−on abruptness and turn−off losses.

Using a single resistor is normally suitable only for very low

frequency PWM. An optimized gate drive output stage is

shown in Figure 32. This circuit allows turn−on and turn−off

to be optimized separately. The turn−on resistor, Ron,

provides control over the IGBT turn−on speed. In motor

control circuits, the resistor sets the turn−on di/dt that

controls how fast the free−wheel diode is cleared. The

interaction of the IGBT and free−wheeling diode determines

the turn−on dv/dt. Excessive turn−on dv/dt is a common

problem in half−bridge circuits. The turn−off resistor, Roff,

controls the turn−off speed and ensures that the IGBT

remains off under commutation stresses. Turn−off is critical

to obtain low switching losses. While IGBTs exhibit a fixed

minimum loss due to minority carrier recombination, a slow

gate drive will dominate the turn−off losses. This is

particularly true for fast IGBTs. It is also possible to turn−off

an IGBT too fast. Excessive turn−off speed will result in

large overshoot voltages. Normally, the turn−off resistor is

a small fraction of the turn−on resistor.

The MC33153 contains a bipolar totem pole output stage

that is capable of sourcing 1.0 amp and sinking 2.0 amps

peak. This output also contains a pull down resistor to ensure

that the IGBT is off whenever there is insufficient VCC to the

MC33153.

In a PWM inverter, IGBTs are used in a half−bridge

configuration. Thus, at least one device is always off. While

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the IGBT is in the off−state, it will be subjected to changes

in voltage caused by the other devices. This is particularly

a problem when the opposite transistor turns on.

When the lower device is turned on, clearing the upper

diode, the turn−on dv/dt of the lower device appears across

the collector emitter of the upper device. To eliminate

shoot−through currents, it is necessary to provide a low sink

impedance to the device that is in the off−state. In most

applications the turn−off resistor can be made small enough

to hold off the device that is under commutation without

causing excessively fast turn−off speeds.

Figure 31. Using a Single Gate Resistor

Output

VCC

VEE

IGBT

Figure 32. Using Separate Resistors

for Turn−On and Turn−Off

Output

VCC

VEE

Ron

IGBT

Roff

Doff

A negative bias voltage can be used to drive the IGBT into

the off−state. This is a practice carried over from bipolar

Darlington drives and is generally not required for IGBTs.

However, a negative bias will reduce the possibility of

shoot−through. The MC33153 has separate pins for VEE and

Kelvin Ground. This permits operation using a +15/−5.0 V

supply.

INTERFACING WITH OPTOISOLATORS

Isolated Input

The MC33153 may be used with an optically isolated

input. The optoisolator can be used to provide level shifting,

and if desired, isolation from ac line voltages. An

optoisolator with a very high dv/dt capability should be

used, such as the Hewlett Packard HCPL4053. The IGBT

gate turn−on resistor should be set large enough to ensure

that the opto’s dv/dt capability is not exceeded. Like most

optoisolators, the HCPL4053 has an active low

open−collector output. Thus, when the LED is on, the output

will be low. The MC33153 has an inverting input pin to

interface directly with an optoisolator using a pullup

resistor. The input may also be interfaced directly to 5.0 V

CMOS logic or a microcontroller.

Optoisolator Output Fault

The MC33153 has an active high fault output. The fault

output may be easily interfaced to an optoisolator. While it

is important that all faults are properly reported, it is equally

important that no false signals are propagated. Again, a high

dv/dt optoisolator should be used.

The LED drive provides a resistor programmable current

of 10 to 20 mA when on, and provides a low impedance path

when off. An active high output, resistor, and small signal

diode provide an excellent LED driver. This circuit is shown

in Figure 33.

Figure 33. Output Fault Optoisolator

Short Circuit

Latch Output

VEE

VCC

VEE

UNDERVOLTAGE LOCKOUT

It is desirable to protect an IGBT from insufficient gate

voltage. IGBTs require 15 V on the gate to achieve the rated

on−voltage. At gate voltages below 13 V, the on−voltage

increases dramatically, especially at higher currents. At very

low gate voltages, below 10 V, the IGBT may operate in the

linear region and quickly overheat. Many PWM motor

drives use a bootstrap supply for the upper gate drive. The

UVLO provides protection for the IGBT in case the

bootstrap capacitor discharges.

The MC33153 will typically start up at about 12 V. The

UVLO circuit has about 1.0 V of hysteresis and will disable

the output if the supply voltage falls below about 11 V.

PROTECTION CIRCUITRY

Desaturation Protection

Bipolar Power circuits have commonly used what is

known as “Desaturation Detection”. This involves

monitoring the collector voltage and turning off the device

if this voltage rises above a certain limit. A bipolar transistor

will only conduct a certain amount of current for a given

base drive. When the base is overdriven, the device is in

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saturation. When the collector current rises above the knee,

the device pulls out of saturation. The maximum current the

device will conduct in the linear region is a function of the

base current and the dc current gain (hFE) of the transistor.

The output characteristics of an IGBT are similar to a

Bipolar device. However, the output current is a function of

gate voltage instead of current. The maximum current

depends on the gate voltage and the device type. IGBTs tend

to have a very high transconductance and a much higher

current density under a short circuit than a bipolar device.

Motor control IGBTs are designed for a lower current

density under shorted conditions and a longer short circuit

survival time.

The best method for detecting desaturation is the use of a

high voltage clamp diode and a comparator. The MC33153

has a Fault Blanking/Desaturation Comparator which

senses the collector voltage and provides an output

indicating when the device is not fully saturated. Diode D1

is an external high voltage diode with a rated voltage

comparable to the power device. When the IGBT is “on” and

saturated, D1 will pull down the voltage on the Fault

Blanking/Desaturation Input. When the IGBT pulls out of

saturation or is “off”, the current source will pull up the input

and trip the comparator. The comparator threshold is 6.5 V,

allowing a maximum on−voltage of about 5.8 V.

A fault exists when the gate input is high and VCE is

greater than the maximum allowable VCE(sat). The output of

the Desaturation Comparator is ANDed with the gate input

signal and fed into the Short Circuit and Overcurrent

Latches. The Overcurrent Latch will turn−off the IGBT for

the remainder of the cycle when a fault is detected. When

input goes high, both latches are reset. The reference voltage

is tied to the Kelvin Ground instead of the VEE to make the

threshold independent of negative gate bias. Note that for

proper operation of the Desaturation Comparator and the

Fault Output, the Current Sense Input must be biased above

the Overcurrent and Short Circuit Comparator thresholds.

This can be accomplished by connecting Pin 1 to VCC.

Figure 34. Desaturation Detection

VCC

VEE

VCC

270 mA

Vref

6.5 V

Desaturation

Comparator

Kelvin

GND

The MC33153 also features a programmable fault

blanking time. During turn−on, the IGBT must clear the

opposing free−wheeling diode. The collector voltage will

remain high until the diode is cleared. Once the diode has

been cleared, the voltage will come down quickly to the

VCE(sat) of the device. Following turn−on, there is normally

considerable ringing on the collector due to the COSS

capacitance of the IGBTs and the parasitic wiring

inductance. The fault signal from the Desaturation

Comparator must be blanked sufficiently to allow the diode

to be cleared and the ringing to settle out.

The blanking function uses an NPN transistor to clamp the

comparator input when the gate input is low. When the input

is switched high, the clamp transistor will turn “off”,

allowing the internal current source to charge the blanking

capacitor. The time required for the blanking capacitor to

charge up from the on−voltage of the internal NPN transistor

to the trip voltage of the comparator is the blanking time.

If a short circuit occurs after the IGBT is turned on and

saturated, the delay time will be the time required for the

current source to charge up the blanking capacitor from the

VCE(sat) level of the IGBT to the trip voltage of the

comparator. Fault blanking can be disabled by leaving Pin 8

unconnected.

Sense IGBT Protection

Another approach to protecting the IGBTs is to sense the

emitter current using a current shunt or Sense IGBTs. This

method has the advantage of being able to use high gain

IGBTs which do not have any inherent short circuit

capability. Current sense IGBTs work as well as current

sense MOSFETs in most circumstances. However, the basic

problem of working with very low sense voltages still exists.

Sense IGBTs sense current through the channel and are

therefore linear with respect to the collector current.

Because IGBTs have a very low incremental on−resistance,

sense IGBTs behave much like low−on resistance current

sense MOSFETs. The output voltage of a properly

terminated sense IGBT is very low, normally less than

100 mV.

The sense IGBT approach requires fault blanking to

prevent false tripping during turn−on. The sense IGBT also

requires that the sense signal is ignored while the gate is low.

This is because the mirror output normally produces large

transient voltages during both turn−on and turn−off due to

the collector to mirror capacitance. With non−sensing types

of IGBTs, a low resistance current shunt (5.0 to 50 mW) can

be used to sense the emitter current. When the output is an

actual short circuit, the inductance will be very low. Since

the blanking circuit provides a fixed minimum on−time, the

peak current under a short circuit can be very high. A short

circuit discern function is implemented by the second

comparator which has a higher trip voltage. The short circuit

signal is latched and appears at the Fault Output. When a

short circuit is detected, the IGBT should be turned−off for

several milliseconds allowing it to cool down before it is

turned back on. The sense circuit is very similar to the

desaturation circuit. It is possible to build a combination

circuit that provides protection for both Short Circuit

capable IGBTs and Sense IGBTs.

MC33153

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APPLICATION INFORMATION

Figure 35 shows a basic IGBT driver application. When

driven from an optoisolator, an input pull up resistor is

required. This resistor value should be set to bias the output

transistor at the desired current. A decoupling capacitor

should be placed close to the IC to minimize switching noise.

A bootstrap diode may be used for a floating supply. If the

protection features are not required, then both the Fault

Blanking/Desaturation and Current Sense Inputs should

both be connected to the Kelvin Ground (Pin 2). When used

with a single supply, the Kelvin Ground and VEE pins should

be connected together. Separate gate resistors are

recommended to optimize the turn−on and turn−off drive.

Figure 35. Basic Application

Fault

Input

Desat/

Blank

Output

Sense

GND

VEE

VCC

MC33153

18 V

B+

Bootstrap

Figure 36. Dual Supply Application

Fault

Input

Desat/

Blank

Output

Sense

GND

VEE

VCC

MC33153

15 V

-5.0 V

When used in a dual supply application as in Figure 36, the

Kelvin Ground should be connected to the emitter of the

IGBT. If the protection features are not used, then both the

Fault Blanking/Desaturation and the Current Sense Inputs

should be connected to Ground. The input optoisolator

should always be referenced to VEE.

If desaturation protection is desired, a high voltage diode

is connected to the Fault Blanking/Desaturation pin. The

blanking capacitor should be connected from the

Desaturation pin to the VEE pin. If a dual supply is used, the

blanking capacitor should be connected to the Kelvin

Ground. The Current Sense Input should be tied high

because the two comparator outputs are ANDed together.

Although the reverse voltage on collector of the IGBT is

clamped to the emitter by the free−wheeling diode, there is

normally considerable inductance within the package itself.

A small resistor in series with the diode can be used to

protect the IC from reverse voltage transients.

Figure 37. Desaturation Application

Fault

Input

Desat/

Blank

Output

Sense

GND

VEE

VCC

MC33153

18 V

CBlank

When using sense IGBTs or a sense resistor, the sense

voltage is applied to the Current Sense Input. The sense trip

voltages are referenced to the Kelvin Ground pin. The sense

voltage is very small, typically about 65 mV, and sensitive

to noise. Therefore, the sense and ground return conductors

should be routed as a differential pair. An RC filter is useful

in filtering any high frequency noise. A blanking capacitor

is connected from the blanking pin to VEE. The stray

capacitance on the blanking pin provides a very small level

of blanking if left open. The blanking pin should not be

grounded when using current sensing, that would disable the

sense. The blanking pin should never be tied high, that

would short out the clamp transistor.

Figure 38. Sense IGBT Application

Fault

Input

Desat/

Blank

Output

Sense

GND

VEE

VCC

MC33153

18 V

MC33153

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ORDERING INFORMATION

Device Operating Temperature Range Package Shipping†

MC33153DG

TA = −40° to +105°C

SOIC−8

(Pb−Free)

98 Units / Rail

MC33153DR2G SOIC−8

(Pb−Free)

1000 / Tape & Reel

MC33153PG PDIP−8

(Pb−Free)

50 Units / Rail

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

MC33153

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PACKAGE DIMENSIONS

PDIP−8

P SUFFIX

CASE 626−05

ISSUE M

NOTE 5

TOP VIEW

CSEATING

PLANE

0.010 CA

SIDE VIEW

END VIEW

NOTE 3

DIM MIN NOM MAX

INCHES

A−−−− −−−− 0.210

A1 0.015 −−−− −−−−

b0.014 0.018 0.022

C0.008 0.010 0.014

D0.355 0.365 0.400

D1 0.005 −−−− −−−−

e0.100 BSC

E0.300 0.310 0.325

L0.115 0.130 0.150

−−−− −−−− 5.33

0.38 −−−− −−−−

0.35 0.46 0.56

0.20 0.25 0.36

9.02 9.27 10.02

0.13 −−−− −−−−

2.54 BSC

7.62 7.87 8.26

2.92 3.30 3.81

MIN NOM MAX

MILLIMETERS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. DIMENSION E IS MEASURED WITH THE LEADS RE-

STRAINED PARALLEL AT WIDTH E2.

4. DIMENSION E1 DOES NOT INCLUDE MOLD FLASH.

5. ROUNDED CORNERS OPTIONAL.

E1 0.240 0.250 0.280 6.10 6.35 7.11

E3 −−−− −−−− 0.430 −−−− −−−− 10.92

0.300 BSC 7.62 BSC

e/2

MC33153

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PACKAGE DIMENSIONS

SOIC−8

D SUFFIX

CASE 751−07

ISSUE AK

1.52

0.060

7.0

0.275

0.6

0.024

1.270

0.050

4.0

0.155

ǒmm

inchesǓ

SCALE 6:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

SEATING

PLANE

X 45 _

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION A AND B DO NOT INCLUDE

MOLD PROTRUSION.

4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)

PER SIDE.

5. DIMENSION D DOES NOT INCLUDE DAMBAR

PROTRUSION. ALLOWABLE DAMBAR

PROTRUSION SHALL BE 0.127 (0.005) TOTAL

IN EXCESS OF THE D DIMENSION AT

MAXIMUM MATERIAL CONDITION.

6. 751−01 THRU 751−06 ARE OBSOLETE. NEW

STANDARD IS 751−07.

0.10 (0.004)

DIM

MIN MAX MIN MAX

INCHES

4.80 5.00 0.189 0.197

MILLIMETERS

B3.80 4.00 0.150 0.157

C1.35 1.75 0.053 0.069

D0.33 0.51 0.013 0.020

G1.27 BSC 0.050 BSC

H0.10 0.25 0.004 0.010

J0.19 0.25 0.007 0.010

K0.40 1.27 0.016 0.050

M0 8 0 8

N0.25 0.50 0.010 0.020

S5.80 6.20 0.228 0.244

−X−

−Y−

0.25 (0.010)

−Z−

0.25 (0.010) ZSXS

____

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

MC33153/D

PUBLICATION ORDERING INFORMATION

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USA/Canada

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Phone: 421 33 790 2910

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Phone: 81−3−5817−1050

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For additional information, please contact your local

Sales Representative