TDA8542AT - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 1997 Nov 14

File under Integrated Circuits, IC01

1998 Mar 25

INTEGRATED CIRCUITS

TDA8542AT

2×1.5 W BTL audio amplifier

1998 Mar 25 2

Philips Semiconductors Product speciﬁcation

2×1.5 W BTL audio ampliﬁer TDA8542AT

FEATURES

•Flexibility in use

•Few external components

•Low saturation voltage of output stage

•Gain can be fixed with external resistors

•Standby mode controlled by CMOS compatible levels

•Low standby current

•No switch-on/switch-off plops

•High supply voltage ripple rejection

•Protected against electrostatic discharge

•Outputs short-circuit safe to ground, VCC and across the

load

•Thermally protected.

GENERAL DESCRIPTION

The TDA8542AT is a two channel audio power amplifier

for an output power of 2 ×1.5 W with an 8 Ω load at a 6 V

supply. The circuit contains two Bridge-Tied Load (BTL)

amplifiers with a complementary PNP-NPN output stage

and standby/mute logic. The TDA8542AT comes in a

20-pin SO package.

APPLICATIONS

•Portable consumer products

•Personal computers

•Motor-driver (servo).

QUICK REFERENCE DATA

ORDERING INFORMATION

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCC supply voltage 2.2 6 18 V

Iqquiescent current VCC =6V −15 22 mA

Istb standby current −−10 µA

Pooutput power THD = 10%; RL=8Ω; VCC =6V 1 1.5 −W

THD total harmonic distortion Po= 0.5 W −0.15 −%

SVRR supply voltage ripple rejection 50 −−dB

TYPE

NUMBER PACKAGE

NAME DESCRIPTION VERSION

TDA8542AT SO20 plastic small outline package; 20 leads; body width 7.5 mm SOT163-1

1998 Mar 25 3

Philips Semiconductors Product speciﬁcation

2×1.5 W BTL audio ampliﬁer TDA8542AT

BLOCK DIAGRAM

Fig.1 Block diagram.

handbook, full pagewidth

MGM211

STANDBY/MUTE LOGIC

20 kΩ

INL−

INL+

VCCL

OUTL−

OUTL+

−

STANDBY/MUTE LOGIC

20 kΩ

INR−

INR+

VCCR

SVR

MODE

OUTR−

OUTR+

−

BTL/SE

LGND RGND

VCCL VCCR

19 12

TDA8542AT

n.c.

GND

1998 Mar 25 4

Philips Semiconductors Product speciﬁcation

2×1.5 W BTL audio ampliﬁer TDA8542AT

PINNING

Note

1. Pins 1, 10, 11 and 20 are connected to the leadframe

and also to the substrate. They may be kept floating.

When connected to the ground-plane the PCB can be

used as heatsink.

SYMBOL PIN DESCRIPTION

GND 1 ground; note 1

LGND 2 ground, left channel

OUTL+ 3 positive loudspeaker terminal,

left channel

MODE 4 operating mode select (standby,

mute, operating)

SVR 5 half supply voltage, decoupling

ripple rejection

BTL/SE 6 BTL loudspeaker or SE

headphone operation

n.c. 7 not connected

OUTR+ 8 positive loudspeaker terminal,

right channel

RGND 9 ground, right channel

GND 10 ground; note 1

GND 11 ground; note 1

VCCR 12 supply voltage, right channel

OUTR−13 negative loudspeaker terminal,

right channel

INR−14 negative input, right channel

INR+ 15 positive input, right channel

INL+ 16 positive input, left channel

INL−17 negative input, left channel

OUTL−18 negative loudspeaker terminal,

left channel

VCCL 19 supply voltage, left channel

GND 20 ground; note 1 Fig.2 Pin configuration.

handbook, halfpage

GND

LGND

OUTL+

MODE

SVR

BTL/SE

n.c.

OUTR+

RGND

GND

VCCL

OUTL−

INL−

INR+

INR−

INL+

OUTR−

VCCR

GND

10 11

TDA8542AT

MGM212

1998 Mar 25 5

Philips Semiconductors Product speciﬁcation

2×1.5 W BTL audio ampliﬁer TDA8542AT

FUNCTIONAL DESCRIPTION

The TDA8542AT is a 2 ×1.5 W BTL audio power amplifier

capable of delivering 2 ×1.5 W output power to an 8 Ω

load at THD = 10% using a 6 V power supply. Using the

MODE pin the device can be switched to standby and

mute condition. The device is protected by an internal

thermal shutdown protection mechanism. The gain can be

set within a range from 6 to 30 dB by external feedback

resistors.

Power ampliﬁer

The power amplifier is a Bridge-Tied Load (BTL) amplifier

with a complementary PNP-NPN output stage.

The voltage loss on the positive supply line is the

saturation voltage of a PNP power transistor, on the

negative side the saturation voltage of a NPN power

transistor. The total voltage loss is <1 V and with a 6 V

supply voltage and an 8 Ω loudspeaker an output power of

1.5 W can be delivered.

Mode select pin

The device is in the standby mode (with a very low current

consumption) if the voltage at the MODE pin is

>(VCC −0.5 V), or if this pin is floating. At a MODE voltage

level of less than 0.5 V the amplifier is fully operational.

In the range between 1.5 V and VCC −1.5 V the amplifier

is in mute condition. The mute condition is useful to

suppress plop noise at the output caused by charging of

the input capacitor.

Headphone connection

A headphone can be connected to the amplifier using two

coupling capacitors for each channel. The common GND

pin of the headphone is connected to the ground of the

amplifier (see Fig.14). In this case the BTL/SE pin must be

either on a logic HIGH level or not connected at all.

The two coupling capacitors can be omitted if it is allowed

to connect the common GND pin of the headphone jack

not to ground, but to a voltage level of 1⁄2VCC (see Fig.14).

In this case the BTL/SE pin must be either on a logic LOW

level or connected to ground. If the BTL/SE pin is on a

LOW level, the power amplifier for the positive

loudspeaker terminal is always in mute condition.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

QUALITY SPECIFICATION

In accordance with

“SNW-FQ-611-E”

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCC supply voltage operating −0.3 +18 V

VIinput voltage −0.3 VCC + 0.3 V

IORM repetitive peak output current −1A

stg storage temperature non-operating −55 +150 °C

Tamb operating ambient temperature −40 +85 °C

Vsc AC and DC short-circuit safe voltage −10 V

Ptot total power dissipation −2.2 W

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth(j-a) thermal resistance from junction to ambient in free air 60 K/W

1998 Mar 25 6

Philips Semiconductors Product speciﬁcation

2×1.5 W BTL audio ampliﬁer TDA8542AT

DC CHARACTERISTICS

VCC =6V; T

amb =25°C; RL=8Ω; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise speciﬁed.

Notes

1. With a load connected at the outputs the quiescent current will increase, the maximum of this increase being equal

to the DC output offset voltage divided by RL.

2. The DC output voltage with respect to ground is approximately 1⁄2VCC.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCC supply voltage operating 2.2 6 18 V

Iqquiescent current RL=∞; note 1 −15 22 mA

Istb standby current VMODE =V

CC −−10 µA

VODC output voltage note 2 −2.2 −V

VOUT+ −VOUT−differential output voltage offset −−50 mV

IIN+, IIN−input bias current −−500 nA

VMODE input voltage mode select operating 0 −0.5 V

mute 1.5 −VCC −1.5 V

standby VCC −0.5 −VCC V

IMODE input current mode select 0 < VMODE <V

CC −−20 µA

VBTL/SE input voltage BTL/SE pin single-ended 0 −0.6 V

BTL 2 −VCC V

IBTL/SE input current BTL/SE pin VBTL/SE =0 −−100 µA

1998 Mar 25 7

Philips Semiconductors Product speciﬁcation

2×1.5 W BTL audio ampliﬁer TDA8542AT

AC CHARACTERISTICS

VCC =6V; T

amb =25°C; RL=8Ω; f = 1 kHz; VMODE = 0 V; measured in test circuit Fig.3; unless otherwise speciﬁed.

Notes

1. Gain of the amplifier is in test circuit of Fig.3.

2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a

source impedance of RS=0Ω at the input.

3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS=0Ω at the input.

The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to

the positive supply rail.

4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS=0Ω at the input.

The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS),

which is applied to the positive supply rail.

5. Output voltage in mute position is measured with a 1 V (RMS) input voltage in a bandwidth of 20 kHz, so including

noise.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Pooutput power THD = 10% 1.2 1.5 −W

THD = 0.5% 0.9 1.1 −W

THD total harmonic distortion Po= 0.4 W −0.15 0.3 %

Gv(cl) closed-loop voltage gain note 1 6 −30 dB

Zi(dif) differential input impedance −100 −kΩ

Vn(o) noise output voltage note 2 −−100 µV

SVRR supply voltage ripple rejection note 3 50 −−dB

note 4 40 −−dB

Vo(mute) output voltage in mute condition note 5 −−200 µV

αcs channel separation 40 −−dB

2R2

--------

1998 Mar 25 8

Philips Semiconductors Product speciﬁcation

2×1.5 W BTL audio ampliﬁer TDA8542AT

TEST AND APPLICATION INFORMATION

Test conditions

Because the application can be either Bridge-Tied Load

(BTL) or Single-Ended (SE), the curves of each application

are shown separately.

The thermal resistance = 60 K/W; the maximum sine wave

power dissipation for Tamb =25°C is:

For Tamb =60°C the maximum total power dissipation is:

BTL application

Tamb =25°C if not specially mentioned, VCC =6V,

f = 1 kHz, RL=8Ω, Gv= 20 dB, audio band-pass

22 Hz to 22 kHz.

The BTL application diagram is illustrated in Fig.3.

The quiescent current has been measured without any

load impedance. The total harmonic distortion as a

function of frequency was measured with a low-pass filter

of 80 kHz. The value of capacitor C3 influences the

behaviour of the SVRR at low frequencies, increasing the

value of C3 increases the performance of the SVRR.

The figure of the mode select voltage (Vms) as a function

of the supply voltage shows three areas; operating, mute

and standby. It shows, that the DC-switching levels of the

mute and standby respectively depends on the supply

voltage level.

Thermal behaviour

The measured thermal resistance of the IC package is

highly dependent on the configuration and size of the

application board. Data may not be comparable between

different semiconductors manufacturers because the

application boards and test methods are not (yet)

standardized. Also, the thermal performance of packages

for a specific application may be different than presented

here, because the configuration of the application boards

(copper area) may be different.

Philips Semiconductors uses FR-4 type application boards

with 1 oz copper traces with solder coating.

The measurements have been carried out with vertical

placed boards.

150 25–

---------------------- 2.1 W=

150 60–

---------------------- 1.5 W=

Using a practical PCB layout with wider copper tracks and

some copper area to the IC pins and just under the IC

(see Fig.22), the thermal resistance from junction to

ambient can be reduced to approximately 56 K/W.

For Tamb(max) =50°C the maximum total power dissipation

at this PCB layout is:

For the application VCC = 6 V and RL=8Ω the worst case

sine wave dissipation is 1.75 W.

SE application

Tamb =25°C if not specially mentioned, VCC = 7.5 V,

f = 1 kHz, RL=4Ω, Gv= 20 dB, audio band-pass

22 Hz to 22 kHz.

The SE application diagram is illustrated in Fig.14.

If the BTL/SE pin (pin 6) is connected to ground, the

positive outputs (pins 3 and 8) will be in mute condition

with a DC level of 1⁄2VCC. When a headphone is used

(RL≥25 Ω) the SE headphone application can be used

without output coupling capacitors; load between negative

output and one of the positive outputs (e.g. pin 3) as

common pin.

Increasing the value of electrolytic capacitor C3 will result

in a better channel separation. Because the positive output

is not designed for high output current (2 ×Io) at low load

impedance (≤16 Ω), the SE application with output

capacitors connected to ground is advised. The capacitor

value of C4/C5 in combination with the load impedance

determines the low frequency behaviour. The THD as a

function of frequency was measured using a low-pass filter

of 80 kHz. The value of capacitor C3 influences the

behaviour of the SVRR at low frequencies, increasing the

value of C3 increases the performance of the SVRR.

General remark

The frequency characteristic can be adapted by

connecting a small capacitor across the feedback resistor.

To improve the immunity of HF radiation in radio circuit

applications, a small capacitor can be connected in

parallel with the feedback resistor (56 kΩ); this creates a

low-pass filter.

150 50–

----------------------- 1.79 W=

1998 Mar 25 9

Philips Semiconductors Product speciﬁcation

2×1.5 W BTL audio ampliﬁer TDA8542AT

BTL APPLICATION

handbook, full pagewidth

MGM213

VCC

ViL

OUTL−

INL−

INL+

OUTL+

100 nF 100 µF

19 12

TDA8542AT

OUTR−

GND

INR−14

INR+

SVR 15

MODE

BTL/SE

OUTR−

OUTR+

47 µF

1 µF

1 µFR1

10 kΩ

50 kΩ

ViR

Fig.3 BTL application.

Pins 1, 10, 11 and 20 connected to ground.

Gain left 2 R2

--------

×=

Gain right 2 R4

--------

×=

Fig.4 Iq as a function of VCC.

RI = ∞.

handbook, halfpage

(mA)

VCC (V)

0420

81216

MGD890

Fig.5 THD as a function of Po.

f = 1 kHz, Gv=20dB.

(1) VCC = 6 V, RL=8Ω.

(2) VCC = 7.5 V, RL=16Ω.

handbook, halfpage

10−1

10−2

MGM214

10−210−1110

THD

(%)

Po (W)

(1)

(2)

1998 Mar 25 10

Philips Semiconductors Product speciﬁcation

2×1.5 W BTL audio ampliﬁer TDA8542AT

Fig.6 THD as a function of frequency.

Po= 0.5 W, Gv= 20 dB.

(1) VCC = 6 V, RL=8Ω.

(2) VCC = 7.5 V, RL=16Ω.

handbook, halfpage

10−1

10−2

MGD892

10 102103104

THD

(%)

f (Hz) 105

(1)

(2)

Fig.7 Channel separation as a function of

frequency.

VCC = 6 V, Vo= 2 V, RL=8Ω.

(1) Gv=30dB.

(2) Gv=20dB.

(3) Gv= 6 dB.

handbook, halfpage

−100

−90

−80

−70

−60

MGD893

10 102103104105

f (Hz)

αcs

(dB) (1)

(2)

(3)

Fig.8 SVRR as a function of frequency.

VCC = 6 V, Rs=0Ω, Vr100 mV.

(1) Gv=30dB.

(2) Gv=20dB.

(3) Gv= 6 dB.

handbook, halfpage

−80

−60

−40

−20

MGD894

102

10 103

SVRR

(dB)

f (Hz)

104105

(1)

(2)

(3)

Fig.9 Po as a function of VCC.

THD = 10%.

(1) RL=8Ω.

(2) RL=16Ω.

handbook, halfpage

048

(W)

VCC (V) 12

2.5

1.5

(1) (2)

0.5

MGD895

1998 Mar 25 11

Philips Semiconductors Product speciﬁcation

2×1.5 W BTL audio ampliﬁer TDA8542AT

Fig.10 Worst case power dissipation as a function

of VCC.

handbook, halfpage

(1) (2)

VCC (V)

04812

MGD896

(W)

(1) RL=8Ω.

(2) RL=16Ω.

Fig.11 Power dissipation as a function of Po.

f = 1 kHz; Gv=20dB.

(1) VCC = 6 V, RL=8Ω.

(2) VCC = 7.5 V, RL=16Ω.

handbook, halfpage

00.5 2.51 1.5 2

MGM215

(1)

(2)

Po (W)

(W)

Fig.12 Vo as a function of Vms.

Band-pass = 22 Hz to 22 kHz.

(1) VCC =3V.

(2) VCC =5V.

(3) VCC =12V.

handbook, halfpage

10−2

10−1

10−3

10−4

10−6

10−5

MGD898

10−11

(V)

Vms (V)

10 102

(1) (2) (3)

Fig.13 VMODE as a function of VP.

handbook, halfpage

048

MODE

(V)

12 VP (V)

MGL210

operating

mute

standby

1998 Mar 25 12

Philips Semiconductors Product speciﬁcation

2×1.5 W BTL audio ampliﬁer TDA8542AT

SE APPLICATION

handbook, full pagewidth

MGM216

VCC

ViL OUTL−

INL−

INL+

OUTL+

100 nF

470 µF

100 µF

19 12

TDA8542AT

OUTR−

GND

RL = 8 Ω

INR−14

INR+

SVR 15

MODE

BTL/SE

OUTR−

OUTR+

47 µF

1 µF

1 µFR1

10 kΩ

100 kΩ

ViR

Fig.14 Single-ended application.

Pins 1, 10, 11 and 20 connected to ground.

Gain left R2

--------

Gain right R4

--------

Fig.15 THD as a function of Po.

handbook, halfpage

Po (W)

THD

(%)

10−1

10−2

MGD899

10−210−11

(1)

(2)

(3)

f = 1 kHz, Gv=20dB.

(1) VCC = 7.5 V, RL=4Ω.

(2) VCC = 9 V, RL=8Ω.

(3) VCC = 12 V, RL=16Ω.

Fig.16 THD as a function of frequency.

Po= 0.5 W, Gv= 20 dB.

(1) VCC = 7.5 V, RL=4Ω.

(2) VCC = 9 V, RL=8Ω.

(3) VCC = 12 V, RL=16Ω.

handbook, halfpage

THD

(%)

f (Hz)

10−1

10−2

MGD900

10 102103104105

(1)

(2)

(3)

1998 Mar 25 13

Philips Semiconductors Product speciﬁcation

2×1.5 W BTL audio ampliﬁer TDA8542AT

Fig.17 Channel separation as a function of

frequency.

handbook, halfpage

−100

−80

−60

−40

−20

MGD901

(2)

102103104f (Hz) 105

(4)

(5)

(1)

(3)

αcs

(dB)

Vo= 1 V, Gv=20dB.

(1) VCC = 5 V, RL=32Ω, to buffer.

(2) VCC = 7.5 V, RL=4Ω.

(3) VCC = 9 V, RL=8Ω.

(4) VCC = 12 V, RL=16Ω.

(5) VCC = 5 V, RL=32Ω.

Fig.18 SVRR as a function of frequency.

RS=0Ω, Vr= 100 mV.

(1) Gv=24dB.

(2) Gv=20dB.

(3) Gv= 0 dB.

handbook, halfpage

−80

−60

−40

−20

MGD902

10 102103

SVRR

(dB)

f (Hz)

104105

(1)

(2)

(3)

Fig.19 Po as a function of VCC.

THD = 10%.

(1) RL=4Ω.

(2) RL=8Ω.

(3) RL=16Ω.

handbook, halfpage

(1) (2) (3)

(W)

VCC (V)16

1.6

1.2

0.8

0.4

MGD903

Fig.20 Worst case power dissipation as a function

of VCC.

THD = 10%.

(1) RL=4Ω.

(2) RL=8Ω.

(3) RL=16Ω.

handbook, halfpage

VCC (V)

048

(1) (2) (3)

1612

MGM217

(W)

1998 Mar 25 14

Philips Semiconductors Product speciﬁcation

2×1.5 W BTL audio ampliﬁer TDA8542AT

Fig.21 P as a function of Po.

f = 1 kHz.

(1) VCC = 12 V, RL=16Ω.

(2) VCC = 7.5 V, RL=4Ω.

(3) VCC = 9 V, RL=8Ω.

handbook, halfpage

(1)

(2)

(3)

2.4

1.6

0.8

00.4 0.8 1.6

1.2

(W)

Po (W)

MGD905

1998 Mar 25 15

Philips Semiconductors Product speciﬁcation

2×1.5 W BTL audio ampliﬁer TDA8542AT

handbook, full pagewidth

11 10

20 1

TDA8542AT

−OUT2 +OUT2

−OUT1 +OUT1

+VCC GND

1 µF

56 kΩ

11 kΩ

10 kΩ

B/S

MODE

100 nF

100 µF

47 µF

IN1

IN2

MGM218

CIC

Nijmegen

TDA

8542AT

TDA

8542AT

Fig.22 Printed-circuit board layout (BTL).

b. Top view with components.

a. Top view of copper.

1998 Mar 25 16

Philips Semiconductors Product speciﬁcation

2×1.5 W BTL audio ampliﬁer TDA8542AT

PACKAGE OUTLINE

UNIT A

max. A1A2A3bpcD

(1) E(1) (1)

ELL

pQZ

ywv θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

inches

2.65 0.30

0.10 2.45

2.25 0.49

0.36 0.32

0.23 13.0

12.6 7.6

7.4 1.27 10.65

10.00 1.1

1.0 0.9

0.4 8

0.25 0.1

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

1.1

0.4

SOT163-1

detail X

0.25

075E04 MS-013AC

pin 1 index

0.10 0.012

0.004 0.096

0.089 0.019

0.014 0.013

0.009 0.51

0.49 0.30

0.29 0.050

1.4

0.055

0.419

0.394 0.043

0.039 0.035

0.016

0.01

0.25

0.01 0.004

0.043

0.016

0.01

0 5 10 mm

scale

vMA

(A )

SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1

95-01-24

97-05-22

1998 Mar 25 17

Philips Semiconductors Product speciﬁcation

2×1.5 W BTL audio ampliﬁer TDA8542AT

SOLDERING

Introduction

There is no soldering method that is ideal for all IC

packages. Wave soldering is often preferred when

through-hole and surface mounted components are mixed

on one printed-circuit board. However, wave soldering is

not always suitable for surface mounted ICs, or for

printed-circuits with high population densities. In these

situations reflow soldering is often used.

This text gives a very brief insight to a complex technology.

A more in-depth account of soldering ICs can be found in

our

“IC Package Databook”

(order code 9398 652 90011).

Reﬂow soldering

Reflow soldering techniques are suitable for all SO

packages.

Reflow soldering requires solder paste (a suspension of

fine solder particles, flux and binding agent) to be applied

to the printed-circuit board by screen printing, stencilling or

pressure-syringe dispensing before package placement.

Several techniques exist for reflowing; for example,

thermal conduction by heated belt. Dwell times vary

between 50 and 300 seconds depending on heating

method. Typical reflow temperatures range from

215 to 250 °C.

Preheating is necessary to dry the paste and evaporate

the binding agent. Preheating duration: 45 minutes at

45 °C.

Wave soldering

Wave soldering techniques can be used for all SO

packages if the following conditions are observed:

•A double-wave (a turbulent wave with high upward

pressure followed by a smooth laminar wave) soldering

technique should be used.

•The longitudinal axis of the package footprint must be

parallel to the solder flow.

•The package footprint must incorporate solder thieves at

the downstream end.

During placement and before soldering, the package must

be fixed with a droplet of adhesive. The adhesive can be

applied by screen printing, pin transfer or syringe

dispensing. The package can be soldered after the

adhesive is cured.

Maximum permissible solder temperature is 260 °C, and

maximum duration of package immersion in solder is

10 seconds, if cooled to less than 150 °C within

6 seconds. Typical dwell time is 4 seconds at 250 °C.

A mildly-activated flux will eliminate the need for removal

of corrosive residues in most applications.

Repairing soldered joints

Fix the component by first soldering two diagonally-

opposite end leads. Use only a low voltage soldering iron

(less than 24 V) applied to the flat part of the lead. Contact

time must be limited to 10 seconds at up to 300 °C. When

using a dedicated tool, all other leads can be soldered in

one operation within 2 to 5 seconds between

270 and 320 °C.

1998 Mar 25 18

Philips Semiconductors Product speciﬁcation

2×1.5 W BTL audio ampliﬁer TDA8542AT

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development.

Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.

Product speciﬁcation This data sheet contains ﬁnal product speciﬁcations.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the speciﬁcation.

1998 Mar 25 19

Philips Semiconductors Product speciﬁcation

2×1.5 W BTL audio ampliﬁer TDA8542AT

NOTES

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Romania: see Italy

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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,

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Hungary: see Austria

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Indonesia: see Singapore

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Printed in The Netherlands 545102/25/02/pp20 Date of release: 1998 Mar 25 Document order number: 9397 750 03349